Rare-earth-doped silica microchip laser fabricated by sintering nanoporous glass

We report a new method for fabricating rare-earth-doped silica glasses for laser materials obtained by sintering nanoporous silica glasses impregnated with rare-earth-doped ions. The fabricated materials have no residual pores and show good optical and mechanical properties. Good performance from a Nd3+-doped silica microchip laser operating at 1.064 mum is successfully demonstrated, suggesting that the fabricated silica glasses have potential for use as active materials for high-power solid-state lasers. (C) 2005 Optical Society of America.

Raman spectroscopic investigation of pure and ytterbium-doped rare earth silicate crystals

Raman spectroscopy was used to study the molecular structure of a series of selected rare earth (RE) silicate crystals including Y2SiO5 (YSO), LU2SiO5 (LSO), (Lu0.5Y0.5)(2)SiO5 (LYSO) and their ytterbium-doped samples. Raman spectra show resolved bands below 500 cm(-1) region assigned to the modes of SiO4 and oxygen vibrations. Multiple bands indicate the nonequivalence of the RE-O bonds and the lifting of the degeneracy of the RE ion vibration. Low intensity bands below 500 cm(-1) are an indication of impurities. The (SiO4)(4-) tetrahedra are characterized by bands near 200 cm(-1) which show a separation of the components of nu(4) and nu(2), in the 500-700 cm(-1) region which are attributed to the distorting bending vibration and in the 880-1000 cm(-1) region which are attributed to the symmetric and antisymmetric stretching vibrational modes. The majority of the bands in the 300-610 cm(-1) region of Re2SiO5 were found to arise from vibrations involving both Si and RE ions, indicating that there is considerable mixing of Si displacements with Si-O bending modes and RE-0 stretching modes. The Raman spectra of RE silicate crystals were analyzed in terms of the molecular structure of the crystals, which enabled separation of the bands attributed to distinct vibrational units. Copyright (C) 2007 John Wiley & Sons, Ltd.

Visible luminescence in Yb3+-doped gadolinium gallium garnets

In this paper, some results on visible luminescence performed on Yb3+-doped gadolinium gallium garnets under 165 and 940 nm excitation were presented. The upconversion luminescence was ascribed to Yb3+ cooperative luminescence and the presence of rare earth impurity ions. The gain cross-sections of Yb:GGG crystal as a function of excited-state population fraction P were studied. Emission spectra under 165 nm at 20 K showed there was no charge transfer luminescence in Yb:GGG. (c) 2006 Elsevier B.V. All rights reserved.

Investigation of the spectroscopic properties of Yb3+-doped yttrium lanthanum oxide transparent ceramic

Spectroscopic properties of (Y0.9-xLa0.1Ybx)(2)O-3 transparent ceramic were studied. Two main absorption peaks of the specimen are centered at 940 and 970 nm, which are suitable for InGaAs laser diode pumping. The main emission peaks were located at 1032 and 1075 nm with larger emission cross-section and longer fluorescence lifetime than those of Yb:Y2O3. These properties of (Y0.9-xLa0.1Ybx)(2)O-3 transparent ceramic are favorable to achieve high efficiency and high power laser output. (c) 2007 Elsevier B.V. All rights reserved.

Passively Q-switched Yb3+ laser with Yb3+-doped CaF2 crystal as saturable absorber

Passive Q-switching of a diode-pumped Yb:LYSO laser at 1060 nm with a Yb3+ ions-doped CaF2 crystal without the excited-state absorption (ESA) was demonstrated. An average output power of 174 mW with pulse duration of 5.6 mu s and repetition rate of 27 kHz have been obtained under the unoptimized conditions. And the Q-switching conversion efficiency was as high as 51.7%. (c) 2007 Optical Society of America.

Nd：YbVO4晶体的拉曼光谱和荧光光谱研究

用群论的方法计算了Nd：YbVO4晶体的拉曼活性振动模数目，在室温下测得了其极化拉曼谱线，并指认了在不同几何配置下，各振动模式所对应的频率。同时，测得了室温下晶体的吸收谱，得到了中心波长为808am吸收峰的半高宽为12nm，并在J-O理论的基础上计算了晶体的光学参数，其三个晶场参数分别为Ω2=6．88945×10^-20cm^2。Ω4=4．13394×10^-20cm^2、Ω6=4．54503×10^-20cm^2，并由此得到^4F3／2能级的荧光寿命为178．69炉，1062nm处的荧光分支比为48．85％，积分发射截面为2．786710^-18cm^2。分别在808nm、940nm激发下测得晶体室温发射谱，观察到了Nd→Yb以及Nd←Yb间的能量传递现象。

铝酸钇晶体中的生长小面

采用提拉法生长了掺Ce、掺Yb和掺Mn的铝酸钇(YAlO3,YAP)晶体,晶体均完整透明,无肉眼可见的气泡、散射和包裹物等宏观缺陷。通过化学腐蚀和同步辐射白光形貌实验检测了YAP晶体中的生长小面缺陷。结果表明:晶体生长过程中,由于凸向熔体的固-液界面,造成了小面生长现象。沿[101]方向生长的YAP晶体中出现的小面为(102),(201),(121)和(121)奇异面。X射线摇摆曲线表征的结果表明:生长小面的存在严重破坏了晶体的微观结构完整性和均匀性,并导致了小角度晶界缺陷的产生。

镱、钠共掺的氟化钙晶体在1050nm的可饱和吸收作用

通过在稳定连续波运转的Yb:YAG激光器中插入不同掺杂浓度的新型钠、镱共掺的氟化钙晶体的对比性实验,证明了镱、钠共掺的氟化钙晶体在1050nm具有明显的可饱和吸收作用,从而解释了该晶体作为增益介质在该波段总是趋于自调Q运转的原因.Yb3+离子是该晶体可饱和吸收作用的主要因素,但是共掺入适当的Na离子可以明显改善晶体的调Q效果.优化共掺镱、钠离子的浓度和比例后的氟化钙晶体能够作为1050nm波段激光器的被动Q开关.

Microstructure and laser-induced damage threshold of ZrO2 coatings dependence on annealing temperature

ZrO2 coatings were deposited on different substrates of Yb:YAG and fused silica by electron beam evaporation. After annealed for 12 h at 673 and 1073 K, respectively, weak absorption of coatings was measured by surface thermal lensing (STL) technique, and then laser-induced damage threshold (LIDT) was determined also. The crystalline phase of ZrO2 coatings and the size of the crystal grain were investigated by X-ray diffraction. It was found that microstructure of ZrO2 coatings was dependent on both annealing temperature and substrate structure, and coatings containing monoclinic phases had higher damage threshold than others. Due to the strong absorption of Yb:YAG, damage threshold of coatings on Yb:YAG was much less than that on fused silica. (C) 2004 Elsevier B.V. All rights reserved.

退火对ZrO2薄膜微结构及激光损伤阈值的影响

利用电子束蒸发方法在Yb:YAG晶体和熔融石英衬底上沉积单层ZrO2薄膜,分别在673 K和1 073 K的温度下经过12 h退火以后,通过X射线衍射(XRD)分析了薄膜晶相,计算了薄膜的晶粒尺寸;利用表面热透镜技术获得了薄膜的吸收;测量了退火后薄膜的激光损伤阈值.实验结果表明:两种衬底上的薄膜结构受到退火温度和衬底表面结构的影响,高温退火有利于单斜相的形成,含单斜相的ZrO2薄膜具有较高的激光损伤阈值,而由于衬底的吸收,Yb:YAG晶体上薄膜的损伤阈值远小于石英衬底上薄膜的损伤阈值.