Modification of ZnO films under high energy Xe-ion irradiations

ZnO films were deposited on (100) Si substrate by radio frequency magnetron sputtering. These films were irradiated at room temperature with 308 MeV Xe-ions to a fluence of 1.0 x 10(12), 1.0 x 10(13) or 1.0 x 10(14) Xe/cm(2). Then the samples were investigated using RBS, XRD, FESEM and PL analyses. The obtained experimental results showed that the deposited ZnO films were highly c-axis orientated and of high purity, 308 MeV Xe-ion irradiations could not change the c-axis oriented. The topography and PL properties of the ZnO films varied with increasing the Xe-ion irradiation fluence. For 1.0 x 10(13) or 1.0 x 10(14) Xe/cm(2) irradiated samples, surface cracks were observed. Furthermore, it was found that the 1.0 x 10(14) Xe/cm(2) irradiated sample exhibiting the strongest PL ability. The modification of structure and PL properties induced by 308 MeV Xe-ion irradiations were briefly discussed. (C) 2008 Elsevier B.V. All rights reserved.

Investigation of PL properties of C-doped SiO2/Si samples after high energy Pb ion irradiation

Amorphous SiO2 thin films with about 400-500 nm in thickness were thermally grown on single crystalline silicon. These SiO2/Si samples were firstly implanted at room temperature (RT) with 100 keV carbon ions to 2.0 x 10(17),5.0 X 10(17) or 1.2 x 10(18) ions/cm(2), then irradiated at RT by 853 MeV Pb ions to 5.0 x 10(11), 1.0 X.10(12) 2.0 x 10(12) or 5.0 x 10(12) ions/cm(2), respectively. The variation of photoluminescence (PL) properties of these samples was analyzed at RT using a fluorescent spectroscopy. The obtained results showed that Pb-ion irradiations led to significant changes of the PL properties of the carbon ion implanted SiO2 films. For examples, 5.0 x 10(12) Pb-ions/cm(2) irradiation produced huge blue and green light-emitters in 2.0 x 10(17) C-ions/cm(2) implanted samples, which resulted in the appearance of two intense PL peaks at about 2.64 and 2.19 eV. For 5.0 x 10(17) carbon-ions/cm(2) implanted samples, 2.0 x 10(12) Pb-ions/cm(2) irradiation could induce the formation of a strong and wide violet band at about 2.90 eV, whereas 5.0 x 10(12) Pb-ionS/cm(2) irradiation could,create double peaks of light emissions at about 2.23 and 2.83 eV. There is no observable PL peak in the 1.2 x 10(18) carbon-ions/cm(2) implanted samples whether it was irradiated with Pb ions or not. All these results implied that special light emitters could be achieved by using proper ion implantation and irradiation conditions, and it will be very useful for the synthesis of new type Of SiO2-based light-emission materials.

Charge stripping accumulation of light heavy ions in HIRFL-CSR main ring

The charge stripping injection method has been adopted for the accumulation of light heavy ions in HIRFL-CSR. This method has some special requirements for the accelerating particles, and at the same time the structure of the injection orbit has to be changed. In this paper, the design of the orbit has been presented, as well as the calculation of the beam line matching. According to the result of commissioning, stripping injection can accumulate the beam to a higher current.

Study on the apoptosis and Bcl-2/Bax expression of human hepatoma SMMC-7721 cells after exposure to heavy-ion and X-ray irradiations

This study is aimed at observing the apoptosis and Bcl-2/Bax gene expression of mammalian cells following heavy-ion and X-ray irradiations. Exponentially growing human hepatoma SMMC-7721 cells cultured in vitro were irradiated with a C-12 ion beam of 50 MeV/u (corresponding to a LET value of 44.56 keV/mu m) from Heavy Ion Research Facility in Lanzhou (HIRFL) at doses varying from 0 to 3 Gy. The X-ray irradiation (8 MV) was performed in the therapy unit of the General Hospital of the Lanzhou Military Area. Survival fractions of irradiated cells at various doses were measured by means of MTT assay. Apoptotic cells after irradiation were analyzed with fluorescence microscope and flow cytometer (FCM). Immuno-histological assay were applied to detect the expression of Bcl-2/Bax genes in the irradiated cells. The survival fraction of SMMC-7721 cells decreased gradually (vs. control p<0.05) with increasing the dose of the carbon ion beam more obviously than X-ray irradiation, and the carbon ion irradiation efficiently induced cell apoptosis and significantly promoted the expression of Bax gene while Bcl-2 gene expression was restrained. High-LET heavy ion beam would induce cell apoptosis effectively than low-LET X-ray, and the apoptosis rate is correlated with the transcription of Bcl-2/Bax and the ratio of Bcl-2/Bax in human hepatoma SMMC-7721 cells after irradiation to heavy ion beam.

Study of the LED based light calibration system for neutron wall detector

The light calibration system is one of the key components of Neutron Wall detector. It is used to calibrate the electronics and to monitor the long-term stability of the detector modules. With the detaile investigations, a calibration system with high-power LED (3W) driven by the fast pulses has been carried out. It is also tested together with the detector module of the Neutron Wall and the result of the preliminary calibration demonstrates that it fulfills the needs. It's a new design proposal to the light calibration system of the fast scintillator detector.

Structural modification of C-doped SiO2 induced by swift heavy ion irradiations

Thermally grown amorphous SiO2 samples were implanted at room temperature (RT) with 120 keV C-ions to a dose ranging from 1.0 x 10(16) to 8.6 x 10(17)C ions/cm(2), then irradiated at RT with 950 MeV Pb, 345 or 1754 MeV Xe ions to a fluence in the region from 1.0 x 10(11) to 3.8 x 10(12) ions/cm(2), respectively. The irradiated samples were investigated using micro-FTIR and micro-Raman spectroscopes. It was found that new chemical bonds such as Si-C, C=C(O), C C and Si(C)-O-C bonds formed significantly in the C-doped SiO2 films after heavy ion irradiations. The evolution of Si-O-C bonds and possible mechanism of structural modification in C-doped SiO2 induced by swift heavy ion irradiations were discussed.

Production cross section of neutron cluster from the reaction of light neutron rich nuclei

Within the Boltzmann-Langevin equation, the neutron cluster production cross sections in the reactions induced by Be-14, He-8, He-6, Li-11, B-17, Be-11, C-19 on C-12 at 35MeV/u were studied. The experimental data for (4)n production cross section from Be-14+C-12 at 35MeV/u can be reproduced. It is found that the production cross section of neutron cluster is large in the reaction that the projectile has more halo nucleons. And the projectiles with big mass number are easy to produce the neutron cluster, when they have the same number of halo nucleons. The neutron cluster is probably mainly from the halo nucleons of projectile.

用于高能轻粒子探测的延迟线PPAC(英文)；Delay-line PPAC for Intermediate Energy Light Ions

气体探测器有成本低廉、制备简单、性能可靠和方便使用等特点。研制了一种5层板结构的延迟线平行板雪崩电离室(PPAC),用于兰州放射性束流线(RIBLL)上开展的实验。在57.6MeV/u的6He束流条件下测试了这种探测器对高能轻粒子的适用性,得到了位置分辨为1.8mm(FWHM),时间分辨为2.6ns,以及可靠的探测效率。

低速~(40)Ar~(17+)离子入射金属Be表面发射的近红外光谱线和X射线谱；Infrared Light and X-ray Emissions of ~(40)Ar~(17+) Impacting on Be Surface ；

用速度不同的(动能EK=272和357keV,速度v=1.14×106和1.72×106m/s)的高电荷态离子40Ar17+分别入射金属Be表面,同时测量这种相互作用过程中产生的近红外光谱线和X射线谱。实验结果表明,在低速范围内(速度小于玻尔速度vBohr=2.19×106m/s),速度较小的40Ar17+离子在到达金属的表面临界距离Rc到进入表面(2—3原子层)的进程中,形成了较多的高激发态Ar原子,其退激辐射较强的光谱线,进而验证了经典过垒模型。

Restudy on the wave functions of Gamma(nS) states in the light-front quark model and the radiative decays of Gamma(nS) -> eta(b) + gamma

The light-front quark model has been applied to calculate the transition matrix elements of heavy hadron decays. However, it is noted that using the traditional wave functions of the light-front quark model given in the literature, the theoretically determined decay constants of the Gamma(nS) obviously contradict the data. This implies that the wave functions must be modified. Keeping the orthogonality among the nS states and fitting their decay constants, we obtain a series of the wave functions for Gamma(nS). Based on these wave functions and by analogy with the hydrogen atom, we suggest a modified analytical form for the Gamma(nS) wave functions. Using the modified wave functions, the obtained decay constants are close to the experimental data. Then we calculate the rates of radiative decays of Gamma(nS) -> eta(b) + gamma. Our predictions are consistent with the experimental data on decays Gamma(3S) -> eta(b) + gamma within the theoretical and experimental errors.