Structural and optical properties of GaAsSb/GaAs heterostructure quantum wells

The structural and optical properties of MBE-grown GaAsSb/GaAs multiple quantum wells (MQWs) as well as strain-compensated GaAsSb/GaAs/GaAsP MQWs are investigated. The results of double crystal X-ray diffraction and reciprocal space mapping show that when strain-compensated layers are introduced, the interface quality of QW structure is remarkably improved, and the MQW structure containing GaAsSb layers with a high Sb composition can be coherently grown. Due to the influence of inserted GaAsP layers on the energy band and carrier distribution of QWs, the optical properties of GaAsSb/GaAs/GaAsP MQWs display a lot of features mainly characteristic of type-I QWs despite the type-II GaAsSb/GaAs interfaces exist in the structure. (C) 2004 Elsevier B.V. All rights reserved.

Electron and hole states in diluted magnetic semiconductor quantum dots

The electronic structure of a diluted magnetic semiconductor (DMS) quantum dot (QD) is studied within the framework of the effective-mass theory. We find that the energies of the electron with different spin orientation exhibit different behavior as a function of magnetic field at small magnetic fields. The energies of the hole decreases rapidly at low magnetic fields and saturate at higher magnetic field due to the sp-d exchange interaction between the carriers and the magnetic ions. The mixing effect of the hole states in the DMS QD can be tuned by changing the external magnetic field. An interesting crossing behavior of the hole ground state between the heavy-hole state and the light-hole state is found with variation of the QD radius. The strength of the interband optical transition for different circular polarization exhibts quite different behavior with increasing magnetic field and QD radius.

Luminescence properties of self-assembled InAs/GaAs quantum dots covered by InAlAs and InGaAs combination strain-reducing layer

We report the photoluminescence (PL) and structural properties of self-assembled InAs/GaAs quantum dots (QDs) covered by In0.2Al0.8As and In0.2Ga0.8As combination strain-reducing layer (SRL). By introducing a thin InAlAs layer, the ground state emission wavelength redshifts, and the energy splitting between the ground and first-excited states increases to 85 meV at 10 K. The energy splitting further increases to 92 meV and the temperature dependence of full width at half maximum (FWHM) changes for QDs with different SRL after the multi-stacking. These results are attributed to the fact that the combination layer has different effects on QDs compared to the InGaAs SRL.

High-indium-content InxGa1-xAs/GaAs quantum wells with emission wavelengths above 1.25 mu m at room temperature

High-indium-content InxGa1-xAs/GaAs single/multi-quantum well (SQW/MQW) structures have been systematically investigated. By optimizing the molecular-beam epitaxy growth conditions, the critical thickness of the strained In0.475Ga0.525As/GaAs QWs is raised to 7 nm, which is much higher than the value given by the Matthews and Blakeslee model. The good crystalline quality of the strained InGaAs/GaAs MQWs is proved by x-ray rocking curves. Photoluminescence measurements show that an emission wavelength of 1.25 mum at room temperatures with narrower full width at half maximum less than 30 meV can be obtained. The strain relaxation mechanism is discussed using the Matthews-Blakeslee model. (C) 2004 American Institute of Physics.

Effect of In0.2Ga0.8As and In0.2Al0.8As combination layer on band offsets of InAs quantum dots

We demonstrate the self-organized InAs quantum dots capped with thin and In0.2Al0.8As and In0.2Ga0.8As combination layers with a large ground and first excited energy separation emission at 1.35 mum at room temperature. Deep level transient spectroscopy is used to obtain quantitative information on emission activation energies and capture barriers for electrons and holes. For this system, the emission activation energies are larger than those for InAs/GaAs quantum dots. With the properties of wide energy separation and deep emission activation energies, self-organized InAs quantum dots capped with In0.2Al0.8As and In0.2Ga0.8As combination layers are one of the promising epitaxial structures of 1.3 mum quantum dot devices. (C) 2004 American Institute of Physics.

Structural and optical properties of 3D growth multilayer InGaN/GaN quantum dots by metalorganic chemical vapor deposition

Multilayer InGaN/GaN quantum dots (QDs) were grown on sapphire substrates through a three-dimensional growth mode, which was initiated by a special passivation processing introduced into the normal growth procedure. Surface morphology and photoluminescence properties of QDs with different stacking periods (from one to four) were investigated. The temperature dependences of the PL peak energies were found to show a great difference between two-layer and three-layer QDs. The fast redshift and the reversed sigmoidal temperature dependences of the PL energies for the former were attributed to the thermally activated carrier transfer from small to large dots. However, the increase of both the dot size and the spatial space among dots with the growing stacking periods reduced the carrier escape and retrapping. (C) 2004 Elsevier B.V. All rights reserved.

Detecting quantum entanglement by means of local operations and classical communication

Based on the positive maps separability criterion, we present a method for the detection of quantum entanglement of a shared bipartite quantum state, within the "distant labs" paradigm, using only local operations and classical communication.

Research progress of self-organized Ge quantum dots on Si substrate

A review is presented on recent research development of self-organized Ge/Si quantum dots (QDs). Emphasis is put on the morphological evolution of the Ge quantum dots grown on Si (001) substrate, the structure analysis of multilayer Ge QDs, the optical and electronic properties of these nanostructures, and the approaches to fabricating ordered Ge quantum dots.

Effect of trimethylgallium flow on the structural and optical properties of InGaN/GaN multiple quantum wells

InGaN/GaN multiple quantum wells (MQWs) are grown by metal-organic chemical vapour deposition on (0001) sapphire substrates. Triple-axis X-ray diffraction (TXRD) and photoluminescence (PL) spectra are used to assess the influence of trimethylgallium (TMGa) flow on structural defects, such as dislocations and interface roughness, and the optical properties of the MQWs. In this paper, a method, involving an ! scan of every satellite peak of TXRD, is presented to measure the mean dislocation density of InGaN/GaN MQWs. The experimental results show that under certain conditions which keep the trimethlyindium flow constant, dislocation density and interface roughness decrease with the increase of TMGa flow, which will improve the PL properties. It can be concluded that dislocations, especially edge dislocations, act as nonradiative recombination centres in InGaN/GaN MQWs. Also noticed is that changing the TMGa flow has more influence on edge dislocations than screw dislocations.

Variational calculations of neutral bound excitons in GaAs quantum-well wires

The binding energy of an exciton bound to a neutral donor (D-0,X) in GaAs quantum-well wires is calculated variationally as a function of the wire width for different positions of the impurity inside the wire by using a two-parameter wavefunction. There is no artificial parameter added in our calculation. The results we have obtained show that the binding energies are closely correlated to the sizes of the wire, the impurity position, and also that their magnitudes are greater than those in the two-dimensional quantum wells compared. In addition, we also calculate the average interparticle distance as a function of the wire width. The results are discussed in detail.

Enhancement of the spectral width of high-power 1.5 mu m integrated superluminescent light source by quantum well intermixing process

A novel type of integrated InGaAsP superluminescent light source was fabricated based on the tilted ridge-waveguide structure with selective-area quantum well (QW) intermixing. The bandgap structure along the length of the device was modified by impurity free vacancy diffusion QW intermixing, The spectral width was broadened from the 16 nm of the normal devices to 37 nm of the QW intermixing enhanced devices at the same output power level. High superluminescent power (210 mW) was obtained under pulsed conditions with a spectral width of 37 nm.

Effect of the InAlAs and InGaAs combination strain-reducing layer on 1.3 mu m emission self-assembled InAs/GaAs quantum dots

Self-assembled InAs quantum dots (QDs) with differing deposition thicknesses covered by InxAl1-xAs (x = 0.2, 0.3) and In0.2Ga0.8As combination strain-reducing layers (CSRLs) were grown by molecular beam epitaxy. Their structural and optical properties were investigated by atomic force microscopy and photoluminescence spectroscopy, respectively. The emission peak position of InAs QDs capped by CSRL can reach 1.34 mum at room temperature with a relatively larger energy splitting of 93 meV between the ground and first excited states.

Ordering growth of InAs quantum dots on ultra-thin InGaAs strained layer

InAs quantum dots (QDs) were grown On Ultra-thin In0.15Ga0.85As strained layers by molecular beam epitaxy on GaAs (00 1) substrates. Combining reflection high-energy electron diffraction, atomic force microscopy and transmission electron microscopy, we analyzed the stress field of dislocations in the strained layer/substrate interface. Specially, we revealed the relative position of QDs and dislocations. We found that the difference of the stress field around dislocations is prominent when the strained layer is ultra-thin and the stress field will directly affect the following growth. On the strained layer surface, In0.15Ga0.85As ridges will form at the inclined upside of dislocations. Then, InAs QDs will prefer nucleating on the ridges, there is relatively small stress between InAs and In0.15Ga0.85As. By selecting ultra-thin In0.15Ga0.85As layer (50 nm) and controlling the QD layer at just form QDs, we obtained ordered InAs QDs. (C) 2004 Elsevier B.V. All rights reserved.

Effect of critical thickness on structural and optical properties of InxGa1-xN/GaN multiple quantum wells

InGaN/GaN multiquantum-well (MQW) structures grown by metalorganic chemical-vapor deposition on n-type GaN and capped by p-type GaN were investigated by cross-sectional transmission electron microscopy, double crystal x-ray diffraction, and temperature-dependent photoluminescence. For the sample with strained-layer thicknesses greater than the critical thicknesses, a high density of pure edge type threading dislocations generated from MQW layers and extended to the cap layer was observed. These dislocations result from a relaxation of the strained layers when their thicknesses are beyond the critical thicknesses. Because of indium outdiffusion from the well layers due to the anneal effect of Mg-doped cap layer growth and defects generated from strain relaxation, the PL emission peak was almost depressed by the broad yellow band with an intensity maximum at 2.28 eV. But for the sample with strained-layer thicknesses less than the critical thicknesses, it has no such phenomenon. The measured critical thicknesses are consistent with the calculated values using the model proposed by Fischer, Kuhne, and Richter. (C) 2004 American Institute of Physics.

Effects of TMIn flow on the interface and optical properties of InGaN/GaN mutiple quantum wells

The effects of pre-TMIn flow prior to QW growth and TMIn flow rates during QW growth on the interface and optical properties of InGaN/GaN MQWs were investigated. Pre-depositing indium prior to QW growth and an appropriate TMIn flow rate can improve the interface abruptness and increase the EL intensity. InGaN/GaN MQWs with improved interface abruptness have increasing emission intensity and wavelength. We attribute the interface improvement and the increase of EL intensity to the improvement of the indium compositional profiles. (C) 2004 Elsevier B.V. All rights reserved.