Analysis and numerical simulation of eigenmode characteristics for semiconductor lasers with an equilateral triangle micro-resonator

The eigenmodes confined in the equilateral triangle resonator (ETR) are analyzed by deriving the eigenvalues and the mode field distributions and by the finite difference time domain (FDTD) technique. The analytical results show that the one-period-length for the mode light rays inside the ETR is the perimeter of the ETR, and the number of transverse modes is limited by the condition of total internal reflection. In addition, the sum of the longitudinal mode index and the transverse mode index should be an even number, which limits the number of confined modes again. Based on the FDTD technique and the Pade approximation, we calculate the mode resonant frequencies and the quality factors from the local maximum and the width of the spectral distribution of the intensity The numerical results of mode frequencies agree very well with the analytical results, and the quality factor of the fundamental mode is usually higher than that of the higher order transverse modes. The results show that the ETR is suitable to realize single-made operation as semiconductor microcavity lasers.

AlGaInP visible quantum well lasers for information technology

650 nm-range AlGaInP multi-quantum well (MQW) laser diodes grown by low pressure metal organic chemical vapor deposition (LP-MOCVD) have been studied and the results are presented in this paper. Threshold current density of broad area contact laser diodes can be as low as 350 A/cm(2). Laser diodes with buried-ridge strip waveguide structures were made, threshold currents and differential efficiencies are (22-40) mA and (0.2-0.7) mW/mA, respectively. Typical output power for the laser diodes is 5 mW, maximum output power of 15 mW has been obtained. Their operation temperature can be up to 90 degrees C under power of 5 mW. After operating under 90 degrees C and 5 mW for 72 hrs, the average increments for the threshold currents of the lasers at 25 degrees C and the operation currents at 5 mW (at 25 degrees C) are (2-3) mA and (3-5) mA, respectively. Reliability tests showed that no obvious degradation was observed after 1400 hours of CW operation under 50 degrees C and 2.5 mW.

A novel ultra low power temperature sensor for UHF RFID tag chip

A novel ultra low power temperature sensor for UHF RFID tag chip is presented. The sensor consists of a constant pulse generator, a temperature related oscillator, a counter and a bias. Conversion of temperature to digital output is fulfilled by counting the number of the clocks of the temperature related oscillator in a constant pulse period. The sensor uses time domain comparing, where high power consumption bandgap voltage references and traditional ADCs are not needed. The sensor is realized in a standard 0.18 mu m CMOS process, and the area is only 0.2mm(2). The accuracy of the temperature sensor is +/- 1 degrees C after calibration. The power consumption of the sensor is only 0.9 mu W.

Widely Frequency-Tunable Optical Microwave Source Based on Amplified Feedback Laser

A monolithic integrated amplified feedback semiconductor laser is demonstrated as an optical microwave source. The optical microwave frequency is continuously tunable in the range of 19.87-26.3 GHz with extinction ratio above 6 dB, 3-dB linewidth about 3MHz.

Subtraction of S-parameters for adiabatic small-signal modulation characteristics of laser diode - art. no. 60201V

An extended subtraction method of scattering parameters for characterizing laser diode is introduced in this paper. The intrinsic small-signal response can be directly extracted from the measured transmission coefficients of laser diode by the method. However the chip temperature may change with the injection bias current due to thermal effects, which causes inaccurate intrinsic response by our method. Therefore, how to determine the chip temperature and keep the laser chip adiabatic is very critical when extracting the intrinsic response. To tackle these problems, the dependence of the lasing wavelength of the laser diode on the chip temperature is investigated, and an applicable measurement setup which keeps the chip temperature stable is presented. The scattering parameters of laser diode are measured on diabatic and adiabatic conditions, and the extracted intrinsic responses for both conditions are compared. It is found that the adiabatic intrinsic responses are evidently superior to those without thermal consideration. The analysis indicates that inclusion of thermal effects is necessary to acquire accurate intrinsic response.

The develop of 622Mbits/s free space laser communication system

622Mbits/s free space laser communication system is developed. IT's communication rate is 622Mbits/s. The whole system include three parts which are signal in and out circuit laser driver and receive circuit and optical antenna The communication principle is introduced The experiment result shows that the transmission of data and image are satisfied with demands of design. It have a definite market value.

Tunable parametric fluorescence using a single crystal

In this paper, we investigate the mechanism of tunable parametric superfluorescence (PS) based on the second harmonic generation and parametric processes taking place in the same nonlinear crystal (BBO). The tunable spectra of PS has been generated between 480 nm and 530 nm, which is pumped by the second-harmonic from the high-power Ti: sapphire laser system at 1 kHz repetition rate. We present the generation mechanism of PS theoretically and simulate the process of PS ring using the amplification transfer function. The experiment and the theory show that PS will appear when the phase matching angle for second-harmonic generation is close to the optimal pump angle for optical parametric generation, and then the tunable spectra of PS are generated by slightly adjusting the crystal angle. The result provides a theoretical basis for controlling the generation of PS and quantum entanglement states, which is of great significance for the development of quantum imaging, quantum communications and other applieations.

Measurement of 3db Bandwidth of Laser Diode Chips

An accurate technique for measuring the frequency response of semiconductor laser diode chips is proposed and experimentally demonstrated. The effects of test jig parasites can be completely removed in the measurement by a new calibration method. In theory, the measuring range of the measurement system is only determined by the measuring range of the instruments network analyzer and photo detector. Diodes' bandwidth of 7.5GHz and 10GHz is measured. The results reveal that the method is feasible and comparing with other method, it is more precise andeasier to use.

Optical analysis of AlGaInP laser diodes with real refractive index guided self-aligned structure

Optical modes of AlGaInP laser diodes with real refractive index guided self-aligned (RISA) structure were analyzed theoretically on the basis of two-dimension semivectorial finite-difference methods (SV-FDMs) and the computed simulation results were presented. The eigenvalue and eigenfunction of this two-dimension waveguide were obtained and the dependence of the confinement factor and beam divergence angles in the direction of parallel and perpendicular to the pn junction on the structure parameters such as the number of quantum wells, the Al composition of the cladding layers, the ridge width, the waveguide thickness and the residual thickness of the upper P-cladding layer were investigated. The results can provide optimized structure parameters and help us design and fabricate high performance AlGaInP laser diodes with a low beam aspect ratio required for optical storage applications.

Potential light source for photonic integrated circuits based on the equilateral triangle resonator

The semiconductor microlasers based on the equilateral triangle resonator (ETR) can be fabricated from the edge-emitting laser wafer by dry-etching technique, and the directional emission can be obtained by connecting an output waveguide to one of the vertices of the ETR. We investigate the mode characteristics, especially the mode quality factor, for the ETR with imperfect vertices, which is inevitable in the real technique process. The numerical simulations show that the confined modes can still have a high quality factor in the ETR with imperfect vertices. We can expect that the microlasers is a suitable light source for photonic integrated circuits.

Design of side-pumped Nd : YAG lasers

Design of the typical laser diode side-pumped Nd:YAG rod system has been discussed using the conventional ray tracing method in this paper. Firstly introduce two basic matrices, refractional and translational matrix, described the transmission of nonparaxial light ray in the medium without concerning the absorption of light. And then, using those matrices, analyze the distribution of pump light in the crystal respectively under the condition of directly pumped system and indirectly pumped system with a cylindrical quartz rod as focusing lens. From the result of simulation, we compare the advantage and disadvantage of the two pumped method, and mainly consider how to select the diameter of the focus lens and cooling tube, indicate the effect of deionized water and cooling tube have on the pump light distribution in the active material. At last, make some conclusions about the side-pumped Nd:YAG laser system.

Influence of open-tube Ga diffusion on the characteristics for thyristor

Open-tube Ga diffusion into a SiO2/Si structure was used for fabrication of the high speed thyristor. The advantages of open-tube Ga diffusion are as follows; it is easier to operate and easier to control the profile of the Ga concentration during processing, a clean surface, which is free from alloy spots can be obtained, this technique ensures to improve the on-state characteristics and dynamic characteristics.

Studies of 6H-SiC devices

Silicon carbide (SiC) is recently receiving increased attention due to its unique electrical and thermal properties. It has been regarded as the most appropriate semiconductor material for high power, high frequency, high temperature, and radiation hard microelectronic devices. The fabrication processes and characterization of basic device on 6H-SiC were systematically studied. The main works are summarized as follows:The homoepitaxial growth on the commercially available single-crystal 6H-SiC wafers was performed in a modified gas source molecular beam epitaxy system. The mesa structured p(+)n junction diodes on the material were fabricated and characterized. The diodes showed a high breakdown voltage of 800 V at room temperature. They operated with good rectification characteristics from room temperature to 673 K.Using thermal evaporation, Ti/6H-SiC Schottky barrier diodes were fabricated. They showed good rectification characteristics from room temperature to 473 K. Using neon implantation to form the edge termination, the breakdown voltage was improved to be 800 V.n-Type 6H-SiC MOS capacitors were fabricated and characterized. Under the same growing conditions, the quality of polysilicon gate capacitors was better than Al. In addition, SiC MOS capacitors had good tolerance to gamma rays. (C) 2002 Published by Elsevier Science B.V.

AlGaInP visible quantum well lasers for information technology

650 nm-range AlGaInP multi-quantum well (MQW) laser diodes grown by low pressure metal organic chemical vapor deposition (LP-MOCVD) have been studied and the results are presented in this paper. Threshold current density of broad area contact laser diodes can be as low as 350 A/cm(2). Laser diodes with buried-ridge strip waveguide structures were made, threshold currents and differential efficiencies are (22-40) mA and (0.2-0.7) mW/mA, respectively. Typical output power for the laser diodes is 5 mW, maximum output power of 15 mW has been obtained. Their operation temperature can be up to 90 degrees C under power of 5 mW. After operating under 90 degrees C and 5 mW for 72 hrs, the average increments for the threshold currents of the lasers at 25 degrees C and the operation currents at 5 mW (at 25 degrees C) are (2-3) mA and (3-5) mA, respectively. Reliability tests showed that no obvious degradation was observed after 1400 hours of CW operation under 50 degrees C and 2.5 mW.

All-Optical Clock Recovery for 20 Gb/s Using an Amplified Feedback DFB Laser

We report all optical clock recovery based on a monolithic integrated four-section amplified feedback semiconductor laser (AFL), with the different sections integrated based on the quantum well intermixing (QWI) technique. The beat frequency of an AFL is continuously tunable in the range of 19.8-26.3 GHz with an extinction ratio above 8 dB, and the 3-dB linewidth is close to 3 MHz. All-optical clock recovery for 20 Gb/s was demonstrated experimentally using the AFL, with a time jitter of 123.9 fs. Degraded signal clock recovery was also successfully demonstrated using both the dispersion and polarization mode dispersion (PMD) degraded signals separately.