392 resultados para Guangdong Sheng
Resumo:
A transfer matrix approach is presented for the study of electron conduction in an arbitrarily shaped cavity structure embedded in a quantum wire. Using the boundary conditions for wave functions, the transfer matrix at an interface with a discontinuous potential boundary is obtained for the first time. The total transfer matrix is calculated by multiplication of the transfer matrix for each segment of the structure as well as numerical integration of coupled second-order differential equations. The proposed method is applied to the evaluation of the conductance and the electron probability density in several typical cavity structures. The effect of the geometrical features on the electron transmission is discussed in detail. In the numerical calculations, the method is found to be more efficient than most of the other methods in the literature and the results are found to be in excellent agreement with those obtained by the recursive Green's function method.
Resumo:
A transfer matrix method is presented for the study of electron conduction in a quantum waveguide with soft wall lateral confinement. By transforming the two-dimensional Schrodinger equation into a set of second order ordinary differential equations, the total transfer matrix is obtained and the scattering probability amplitudes are calculated. The proposed method is applied to the evaluation of the electron transmission in two types of cavity structure with finite-height square-well confinement. The results obtained by our method, which are found to be in excellent agreement with those from another transfer matrix method, suggest that the infinite square-well potential is a good approximation to finite-height square-well confinement for electrons propagating in the ground transverse mode, but softening of the walls has an obvious effect on the electron transmission and mode-mixing for propagating in the excited transverse mode. (C) 1996 American Institute of Physics.
Resumo:
The effects of high temperature annealing on the microstructure and optical properties of luminescent SiOx:H films have been investigated. Micro-Raman scattering and IR absorption, in combination with atomic force microscopy (AFM), provide evidence for the existence of both a-Si clusters in the as-grown a-SiOx:H and Si nanocrystals in the 1170 degrees C annealed films. The dependence of optical coefficients (alpha) on photon energy (h nu) near the absorption edge (E-g) is found to follow the square root law: (alpha h nu)(1/2) proportional to (E-g - h nu), indicating that nano-Si embedded in SiO2 is still an indirect material. A comparison of the deduced absorption edge with the PL spectra shows an obvious Stokes shift, suggesting that phonons should be involved in the optical transition process.
Resumo:
High quality hydrogenated amorphous silicon (a-Si:H) films have been prepared by a simple "uninterrupted growth/annealing" plasma enhanced chemical vapor deposition (PECVD) technique, combined with a subtle boron-compensated doping. These a-Si:H films possess a high photosensitivity over 10(6), and exhibit no degradation in photoconductivity and a low light-induced defect density after prolonged illumination. The central idea is to control the growth conditions adjacent to the critical point of phase transition from amorphous to crystalline state, and yet to locate the Fermi level close to the midgap. Our results show that the improved stability and photosensitivity of a-Si:H films prepared by this method can be mainly attributed to the formation of a more robust network structure and reduction in the precursors density of light-induced metastable defects.
Resumo:
We have developed a low-temperature (LT) growth technique. Even with Ge fraction x upto 90%, the total thickness of fully relaxed GexSi1-x buffers can he reduced to 1.7 mu m with dislocation density lower than 5 x 10(6) cm(-2). The surface roughness is no more than 6 nm. The strain relaxation is quite inhomogeneous From the beginning. Stacking faults generate and form the mismatch dislocations in the interface of GeSi/LT-Si. (C) 1999 Elsevier Science B.V. All rights reserved.
Resumo:
This paper describes the design and fabrication process of a two-dimensional GaAs-based photonic crystal nanocavity with InAs quantum dots (QDs) emitters and analyzes the optical characteristics of cavity modes at room temperature. The micro-luminescence spectrum recorded from the nanocavities exhibits a narrow optical transition at the lowest order resonance wavelength of about 1137 nm with about 1 nm emission linewidth. In addition, the spectra of photonic crystal nanocavities processed under different etching conditions show that the verticality of air hole sidewall is an important factor determing the luminescence characteristics of photonic crystal nanocaivties. Finally,,the variance of resonant modes is also discussed as a function of r/a ratio and will be used in techniques aimed at improving the probability of achieving spectral coupling of a single QD to a cavity mode.
Resumo:
地学信息图谱是用图谱思维方法归纳、总结、抽象和概括复杂地学现象或过程的前沿性研究领域,具有挖掘地学现象“格局与过程”内在规律的优势。本研究以广东省土壤资源研究对象,运用地学信息图谱的理论,把环境信息模型与各种现代信息技术集成的方法,对土壤资源环境基础信息及其他相关信息进行处理,经过图谱思维的抽象概括,构建出省级区域土壤资源作物适宜性的空间格局信息图谱。图谱可用于揭示土壤生态环境及其各要素的空间形态结构与适宜性变化规律,形成对土壤资源与环境更深层次的认识,为农业生产和生态环境规划决策提供重要的科学依据和具体实施方案。并探索一个土壤资源的可视化研究体系。本研究主要内容包括: (1) 由于影响作物生长的因子复杂多样,其生理生态数据也难于获取,本文以FAO的Ecocrop1为基础,根据广东省的气候带类型和本省独特的气象条件,从1710种作物中筛选了包括粮食作物、经济作物、水果和蔬菜等共126种气候适宜型作物。解决了在大区域筛选多种作物的难题,从而使得大区域内快速开展作物适宜评价成为可能。 (2) 在分析广东省土壤生态环境主要特征及各因子之间作用关系基础上,提出以气候因子为筛选适宜性评价对像的基本条件,以土壤因子为筛选的细化条件,再根据社会经济发展状况,种植历史等因素,得到66种候选评价作物。 (3) 提出了基于土壤资源的作物适宜性图谱的评价指标体系。根据作物生长对土壤资源的要求,确定了包括坡度、土壤有效深度、土壤排水情况、土壤质地以及土壤pH等五个因子为评价指标。并给出所有被评价作物针对不同指标的适宜性评价模型。 (4) 构造了单因子逐一评价、多因子综合评判的方法,通过该方法构建了广东省土壤资源66种作物适宜性图谱,以谱系的形式直观地揭示复杂的生态环境因子的空间分异规律。构建了基于广东土壤生态环境各因子评价指数诊断图,直观而准确地反映各因子的特征、优势及面临的主要问题。 (5) 将定性方法与定量方法相结合,以生态学理论为依据,以植物生长的生理条件为原则,探讨了大区域多作物适宜性评价的技术路线。该方法可以快速高效地评价省级区域土壤的多种作物的适宜性。 (6) 基于地学信息图谱固有的海量信息的特点,构建了广东省土壤资源作物适宜性图谱信息管理系统。该系统可以方便地查询和使用因子诊断图谱以及土壤资源的适宜性图谱,是共享成果的一个开放平台,提高了成果的使用效率。
Resumo:
广西壮族自治区是中国多孔菌资源比较丰富的区域之一,本研究对广西主要林区进行了初步调查,并根据形态学研究方法对广西地区的多孔菌进行了系统分类学研究。 结果显示,广西地区的多孔菌共有15科,60属,140种。研究过程中发现两个新种,分别是菌索容氏孔菌Junghuhnia rhizomorpha H.S. Yuan & Y.C. Dai和小孔大孢卧孔菌Megasporoporia microporela X.S. Zhou &Y.C. Dai;发现7个中国新记录种:萨拉氏灵芝Ganoderma sarasinii Steyaert,唐氏胶囊革菌Gloeocystidiellum donkii S.S. Rattan,线浅孔菌Grammothele lineata Berkeley & M.A. Curtis,粉状捷克革菌Jacksonomyces furfurellus (Bres.) Sheng H. Wu & Z.C. Chen,半伏容氏孔菌Junghuhnia separabilima (Pouzar) Ryvarden,非洲纵隔担孔菌Protomerulius africanus (Ryvarden) Ryvarden和日本芮氏孔菌Wrightoporia japonica Núñez & Ryvarden;78种为广西地区新记录种,占该地区已报道种类的55.7%。 依据分类学的研究结果,对广西地区的多孔菌的种类组成和地理成分进行了初步分析,结果显示,优势科为多孔菌科Polyporaceae(33.3%),其次为皱孔菌科Meripilaceae(10%),优势属为多孔菌属Polyporus(7.9%%)和针层孔菌属Phellinus(5.7%);属的地理成分以世界广布属(68.3%)和热带–亚热带分布属(23.3%)为主,种的地理成分以泛热带分布成分(35%)和世界广布种(30%)为主。 经研究表明广西地区共有森林干基腐朽病原多孔菌21种,食用多孔菌菌有5种,药用多孔菌32种,工业用多孔菌17种,多孔菌资源较丰富。 对重要种类木蹄层孔菌Fomes fomentarius (L.:Fr.) Fr.进行了固体培养研究,结果显示木蹄层孔菌的营养菌丝生长最适培养温度为28℃,最适培养pH值为7,最适培养碳源为蔗糖,最适培养氮源为蛋白胨。
Resumo:
革菌是指平伏的具有光滑、齿状或瘤状子实层体表面的木材腐朽菌,该类群属于担子菌门(Basidiomycota),担子菌纲(Basidiomycetes),是一类数量较多、组成较为复杂的高等真菌。 革菌具有重要的生态学功能和经济价值。该类群真菌能够降解木质素和纤维素,在森林生态系统中起着关键的降解还原作用;同时,革菌还是重要的生物资源,部分种类能够造成林木病害是林木病原菌;部分革菌具有药用、食用价值;有些种类的革菌还具有重要的工业应用价值。 对采集自我国不同地区、不同森林生态类型中的,以及现保存于中国科学院沈阳应用生态研究所东北生物标本馆(IFP),中国科学院微生物研究所真菌标本馆(HMAS)等国内主要标本馆的非褶菌目木材腐朽菌 — 产丝齿菌属(Hyphodontia J. Erikss.)的真菌标本进行了全面系统的研究,其中自采标本约800余号,馆藏标本600余号。按照Donk,Eriksson和Parmasto提出的传统分类方法对该属的种类进行详细的描述和显微结构绘图,记载了每个种类的寄主、国内外分布及研究标本,并对每种与相似种的联系和区别进行了讨论。我国范围内共记录及描述产丝齿菌属(Hyphodontia)39种,其中共发现新种3个,分别是:头状囊产丝齿菌Hyphodontia capitatocystidiata H.X. Xiong, Y.C. Dai & Sheng H. Wu,异囊产丝齿菌H. heterocystidiata H.X. Xiong, Y.C. Dai & Sheng H. Wu 和 似土黄产丝齿菌H. subpallidula H.X. Xiong, Y.C. Dai & Sheng H. Wu;发现中国新记录种2个:冷杉产丝齿菌Hyphodontia abieticola (Bourdot & Galzin) J. Erikss.和弯孢产丝齿菌H. curvispora J. Erikss. & Hjortstam;大陆新记录种7个,分别是:台湾产丝齿菌Hyphodontia formosana Sheng H. Wu & Burds.,羊毛状产丝齿菌Hyphodontia lanata Burds. & Nakasone,膜质产丝齿菌Hyphodontia pelliculae (H. Furuk.) N. Maek.,无锁产丝齿菌Hyphodontia poroideoefibulata Sheng H. Wu,近球孢产丝齿菌Hyphodontia subglobasa Sheng H. Wu,热带产丝齿菌Hyphodontia tropica Sheng H. Wu和管形产丝齿菌Hyphodontia tubuliformis Sheng H. Wu。