Generation of 210 fs laser pulses at 1093 nm by a self-starting mode-locked Yb:GYSO laser

We report the first demonstration, to our knowledge, of the femtosecond laser operation by using a new alloyed Yb:GYSO crystal as the gain medium. With a 5 at. % Yb3+-doped sample and chirped mirrors for dispersion compensation, we obtained pulses as short as 210 fs at the center wavelength of 1093 nm. The average mode-locking power is 300 mW, and the pulse repetition frequency is 80 MHz. (C) 2008 Optical Society of America

Luminescence behavior of Yb(3+)heavy-doped yttrium lanthanum oxide transparent ceramics

Yb3+ heavy-doped yttrium lanthanum oxide transparent ceramics were fabricated and their spectroscopic properties were investigated. The absorption bands of (YbxY0.9-xLa0.1)(2)O-3 (x = 0.05-0.15) ceramics are broad at wavelength of 900-1000 nm. The absorption cross-sections centered at 974 nm and the emission cross-sections at 1031 nm of Yb3+ ion are 0.89-1.12 x 10(-20) cm(2) and 1.05 x 10(-20) cm(2) respectively. The up-conversion luminescence intensity of Yb3+-doped yttrium lanthanum oxide ceramics increased firstly, then decreased with the increase of Yb3+ ion content. (C) 2008 Elsevier B.V. All rights reserved.

Damage on HfO2/SiO2 high-reflecting coatings under single and multiple Nd:YAG laser pulse irradiation

The single- and multi-shot damage behaviors of HfO2/SiO2 high-reflecting (HR) coatings under Nd:YAG laser exposure were investigated. Fundamental aspects of multi-shot laser damage, such as the instability due to pulse-to-pulse accumulation of absorption defect and structural defect effect, and the mechanism of laser induced defect generation, are considered. It was found in multi-shot damage, the main factors influencing laser-induced damage threshold (LIDT) are accumulation of irreversible changes of structural defects and thermal stress that induced by thermal density fluctuations.

单晶硅材料的1064nmNd：YAG脉冲激光损伤特性研究

作为微电子和光电子系统中普遍使用的一种结构材料，单晶硅一直是人们研究的焦点。长期以来，人们对其电学性质进行了非常深入细致的研究，却疏于对其抗击强激光辐照特性的研究。随着激光通讯和光电对抗技术的发展，对光学材料的激光破坏特性和加固技术进行研究的需求也显得越来越迫切。本文主要对单晶硅的抗激光损伤特性进行研究，研究了单晶硅材料在1064nmNd：YAG激光自由脉冲输出模式和单脉冲输出模式作用下的损伤特性，通过对两种激光作用下单晶硅损伤形貌的分析，在热效应与热力耦合模型的基础上，对单晶硅的激光损伤机制进行了探索。

Laser-induced damage of Ta2O5/S1O2 narrow-band interference filters under different 1064 nm Nd : YAG laser modes

The laser-induced damage (LID) behavior of narrow-band interference filters was investigated with a Nd:YAG laser at 1064 nm under single-pulse mode and free-running mode. The absorption measurement of such coatings was performed with surface thermal lensing (STL) technique. The damage morphologies under the two different laser modes were also studied in detail. It was found that all the filters exhibited a pass-band-center-dependent absorption and laser-induced damage threshold (LIDT) behavior, but the damage morphologies were diverse. The explanation was given with the analysis of the electric field distribution and the operational behavior of the irradiation laser. (c) 2005 Elsevier B.V. All rights reserved.

Nd：YAG激光器光栅式扫描预处理的计算模拟与优化分析

采用计算模拟的方法．研究了光栅式扫描预处理的扫描方式以及脉冲能量波动、定位误差对预处理效率的影响。研究发现。脉冲能量波动及其定位误差使预处理效率降低，同时其影响与扫描方式之间存在相互调制作用．因此可以通过选择合适的扫描方式以及扫描间隔来优化预处理流程，提高预处理效率。此外发现，光斑呈等边三角形排列时的预处理效率优于正方形。

掺Yb双包层光纤激光器v形槽侧面粘和泵浦方法

一种掺Yb双包层光纤激光器v形槽侧面粘和泵浦方法，其特征在于，包括如下步骤:步骤1:在双包层光纤的内包层和外包层上用精密光学微加工技术沿双包层光纤的轴向加工一段v形槽，该v形槽的底部高于双包层光纤的纤芯的表面;步骤2:将多模尾纤的一端用化学腐蚀方法去掉涂敷层，得到裸尾纤;步骤3:将多模尾纤一端的裸尾纤放入双包层光纤的v形槽内，该裸尾纤与纤芯相隔一距离;步骤4:使用光学折射率匹配胶填充于v形槽内，使裸尾纤与纤芯平行固定于v形槽内。

A Diode-Side-Pumped Dynamic Fundamental Mode Nd:YAG Laser

A fundamental mode Nd YAG laser is experimentally demonstrated with a stagger pumped laser module and a special resonator. The rod is pumped symmetrically by staggered bar modules. A dynamic fundamental mode is achieved with the special resonator under different pump levels. A maximal continuous wave output of 61 W (M-2 = 1.4) is achieved with a single rod. An average output of 47 W, pulse width of 54 ns, pulse energy of 4.7 mJ and peak power of 87 kW are obtained under the Q-switched operation of 10 kHz.

Passive Q-switched mode locking of double-clading Yb : fiber laser with ion-implanted GaAs

We report the technique of the ion-implanted semi-insulating GaAs wafer used for passive Q-switched mode locking in double-cladding Yb:fiber laser. The wafer was implanted with 400-keV energy, 10(16)/cm(2) dose As+ ions, and was annealed at 600degreesC for 20 min. At the pump power of 5W, we achieved output power of 200mW. The repetition rate of envelope of Q-switched mode locking is 50-kHz with a FWHM envelope of 4mus. The repetition rate of mode locked pulse train was found to be 15-MHz. This is the first report of such a kind of laser to the best of our knowledge.

1ps passively mode-locked laser operation of Na, Yb : CaF2 crystal

Diode-pumped passively mode-locked laser operation of Yb3+,Na+:CaF2 single crystal has been demonstrated for the first time. By using a SESAM ( semiconductor saturable mirror), simultaneous transform-limited 1-ps passively mode-locked pulses, with the repetition rate of 183MHz, were obtained under the self-Q-switched envelope induced by the laser medium. The average output power of 360mW was attained at 1047nm for 3.34W of absorbed power at 976nm, and the corresponding pulse peak power arrived at 27kW, indicating the promising application of Yb3+,Na+-codoped CaF2 crystals in achieving ultra-short pulses and high pulse peak power. (c) 2005 Optical Society of America.