473 resultados para Er3 ion


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VOx thin films have been fabricated by low temperature ion beam sputtering and post reductive annealing process. Semiconductor-metal phase transition is observed for the film annealed at 400 degrees C for 2 hours. The film also shows a polycrystal structure with grain size from 50nm to 150nm. The VOx thin films fabricated by this process have a TCR up to -2.7% at room temperature. Our results indicate a promising fabrication method of the nano-structured VOx film with relatively high TCR and semiconductor-metal phase transition.

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Raman scattering measurements have been performed in diluted magnetic semiconductor Ga1-xMnxAs prepared by Mn-ion implantation, deposition, and post-annealing technique. It is found that the Raman spectrum measured from the implanted surface of the sample shows some new weak modes in addition to the GaAs-like modes which are observed from the unimplanted surface. The new vibrational modes observed are assigned to MnAs-like modes. The coupled LO-phonon plasmon mode, and Mn and As related vibrational modes caused by Mn-ion implantation, deposition, and post-annealing are also observed. Furthermore, the GaAs-like modes are found to be shifted by approximately 4 cm(-1) in the lower frequency side, compared with those observed from the unimplanted surface.

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Raman scattering measurements have been carried out on ferromagnetic semiconductor Ga1-xMnxN prepared by Mn-ion implantation and post annealing. The Raman results obtained from the annealed and un-annealed Ga1-xMnxN demonstrate that crystalline quality has been improved in Ga1-xMnxN after annealing. Some new vibrational modes in addition to GaN-like modes are found in the Raman spectra measured from the Ga1-xMnxN where the GaN-like modes are found to be shifted in the higher frequency side than those measured from the bulk GaN. A new vibrational mode observed is assigned to MnN-like mode. Other new phonon modes observed are assigned to disorder-activated modes and Mn-related vibrational modes caused by Mn-ion implantation and post-annealing. (c) 2006 Elsevier Ltd. All rights reserved.

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PL properties of Er3+ doped SiOx films containing Si nanoparticles have been studied. Er3+ emission intensity does not depend strongly upon crystallinity of Si clusters. The films can yield efficient Er3+ emission.

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The feasibility of biodiesel production from soapstock containing high water content and fatty matters by a solid acid catalyst was investigated. Soapstock was converted to high-acid acid oil (HAAO) by the hydrolysis by KOH and the acidulation by sulfuric acid. The acid value of soapstock-HAAO increased to 199.1 mg KOH/g but a large amount of potassium sulfate was produced. To resolve the formation of potassium sulfate, acid oil was extracted from soapstock and was converted to HAAO by using sodium dodecyl benzene sulfonate (SDBS). The maximum acid value of acid oil-HAAO was 194.2 mg KOH/g when the mass ratio of acid oil, sulfuric acid, and water was 10:4:10 at 2% of SDBS. In the esterification of HAAO using Amberylst-15, fatty acid methyl ester (FAME) concentration was 91.7 and 81.3% for soapstock and acid oil, respectively. After the distillation, FAME concentration became 98.1% and 96.7% for soapstock and acid oil. The distillation process decreased the total glycerin and the acid value of FAME produced a little.

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Starting from the modeling of isolated ions and ion-clusters, a closed form rate and power evolution equations for high-concentration erbium-doped fiber amplifiers are constructed. Based on the equations, the effects of the fraction of ion-clusters in total ions and the number of ions per cluster on the performance of high-concentration erbium-doped fiber amplifiers are analyzed numerically. The results show that the presence of the ion-clusters deteriorates amplifier performance, such as the signal power, signal gain, the threshold pump power for zero gain, saturated signal gain, and the maximum gain efficiency, etc. The optimum fiber length or other parameters should be modified with the ion-clusters being taken into account for the amplifiers to achieve a better performance. (c) 2007 Elsevier B.V. All rights reserved.

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National Natural Science Foundationa of China(60253706060408002)

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Er3+Judd-Ofelt Er3+ 0.15 mol%Er2O3 Er3+ 522 nm544 nm658 nm 2H11/24I15/24 S3/24I15/24 F9/24I15/2 522 nm 658nm 544 nm . Er3+ .

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Er Er0 02JuddOfelt (A=246)Er E0