Luminescence properties of Er3+ - Doped SiOx films containing amorphous Si nanoparticles


Autoria(s): Chen WD; Chen CY
Data(s)

2004

Resumo

PL properties of Er3+ doped SiOx films containing Si nanoparticles have been studied. Er3+ emission intensity does not depend strongly upon crystallinity of Si clusters. The films can yield efficient Er3+ emission.

PL properties of Er3+ doped SiOx films containing Si nanoparticles have been studied. Er3+ emission intensity does not depend strongly upon crystallinity of Si clusters. The films can yield efficient Er3+ emission.

zhangdi于2010-03-29批量导入

zhangdi于2010-03-29批量导入

IEEE.

Chinese Acad Sci, Inst Semicond, State Key Lab Surface Phys, Beijing 100083, Peoples R China

IEEE.

Identificador

http://ir.semi.ac.cn/handle/172111/10056

http://www.irgrid.ac.cn/handle/1471x/66029

Idioma(s)

英语

Publicador

IEEE

345 E 47TH ST, NEW YORK, NY 10017 USA

Fonte

Chen, WD; Chen, CY .Luminescence properties of Er3+ - Doped SiOx films containing amorphous Si nanoparticles .见:IEEE .2004 IST IEEE INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS,345 E 47TH ST, NEW YORK, NY 10017 USA ,2004,75-76

Palavras-Chave #光电子学
Tipo

会议论文