Growth and photoluminescence of epitaxial CeO2 film on Si (111) substrate

A CeO2 film with a thickness of about 80nm was deposited by a mass-analysed low-energy dual ion beam deposition technique on an Si(111) substrate. Reflection high-energy electron diffraction and x-ray diffraction measurements showed that the film is a single crystal. The tetravalent state of Ce in the film was confirmed by x-ray photoelectron spectroscopy measurements, indicating that stoichiometric CeO2 was formed. Violet/blue light emission (379.5 nm) was observed at room temperature, which may be tentatively explained by charge transitions from the 4f band to the valence band of CeO2.

Electroluminescence behavior of ZnO/Si heterojunctions: Energy band alignment and interfacial microstructure

n-ZnO/p-Si heterojunction light-emitting diodes (LEDs) show weak defect-related electroluminescence (EL). In order to analyze the origin of the weak EL, the energy band alignment and interfacial microstructure of ZnO/Si heterojunction are investigated by x-ray photoelectron spectroscopy. The valence band offset (VBO) is determined to be 3.15 +/- 0.15 eV and conduction band offset is -0.90 +/- 0.15 eV, showing a type-II band alignment. The higher VBO means a high potential barrier for holes injected from Si into ZnO, and hence, charge carrier recombination takes place mainly on the Si side rather than the ZnO layer. It is also found that a 2.1 nm thick SiOx interfacial layer is formed at the ZnO/Si interface. The unavoidable SiOx interfacial layer provides to a large number of nonradiative centers at the ZnO/Si interface and gives rise to poor crystallinity in the ZnO films. The weak EL from the n-ZnO/p-Si LEDs can be ascribed to the high ZnO/Si VBO and existence of the SiOx interfacial layer.

ELECTRONIC SPECTROSCOPY STUDIES OF A P2S5NH4OH TREATED GAS(100) SURFACE

Microscopic characteristics of the GaAs(100) surface treated with P2S5/NH4OH solution has been investigated by using Auger-electron spectroscopy (AES) and x-ray photoemission spectroscopy (XPS). AES reveals that only phosphorus and sulfur, but not oxygen, are contained in the interface between passivation film and GaAs substrate. Using XPS it is found that both Ga2O3 and As2O3 are removed from the GaAs surface by the P2S5/NH4OH treatment; instead, gallium sulfide and arsenic sulfide are formed. The passivation film results in a reduction of the density of states of the surface electrons and an improvement of the electronic and optical properties of the GaAs surface.

INTERACTION OF CO WITH SI AND SIO2 DURING RAPID THERMAL ANNEALING

The interaction of Co with Si and SiO2 during rapid thermal annealing has been investigated. Phase sequence, layer morphology, and reaction kinetics were studied by sheet resistance, x-ray diffraction, Auger electron spectroscopy, x-ray photoelectron spectroscopy, and scanning electron microscopy. With increasing annealing temperature, Co film on Si(100) is transformed sequentially into Co2Si, CoSi, and finally CoSi2 which corresponds to the minimum of sheet resistance. No evidence of silicide formation was observed for Co/SiO2 annealed even at the high temperature of 1050-degrees-C.

Strong red light emission from silicon nanocrystals embedded in SIO2 matrix

In this study, silicon nanocrystals embedded in SiO2 matrix were formed by conventional plasma enhanced chemical vapor deposition (PECVD) followed by high temperature annealing. The formation of silicon nanocrystals (nc-Si), their optical and micro-structural properties were studied using various experimental techniques, including Fourier transform infrared spectroscopy, micro-Raman spectra, high resolution transmission electron microscopy and x-ray photoelectron spectroscopy. Very strong red light emission from silicon nanocrystals at room temperature (RT) was observed. It was found that there is a strong correlation between the PL intensity and the substrate temperature, the oxygen content and the annealing temperature. When the substrate temperature decreases from 250degreesC to RT, the PL intensity increases by two orders of magnitude.

Effects of silicon incorporation on composition, structure and electric conductivity of cubic boron nitride thin films

We have achieved in-situ Si incorporation into cubic boron nitride (c-BN) thin films during ion beam assisted deposition. The effects of silicon incorporation on the composition, structure and electric conductivity of c-BN thin films were investigated by Fourier transform infrared spectroscopy, X-ray photoelectron spectroscopy and electrical measurements. The results suggest that the content of the cubic phase remains stable on the whole with the incorporation of Si up to a concentration of 3.3 at.%, and the higher Si concentrations lead to a gradual change from c-BN to hexagonal boron nitride. It is found that the introduced Si atoms only replace B atoms and combine with N atoms to form Si-N bonds, and no evidence of the existence of Si-B bonds is observed. The resistance of the Si-doped c-BN films gradually decreases with increasing Si concentration, and the resistivity of the c-BN film with 3.3 at.% Si is lowered by two orders of magnitude as compared to undoped samples.

Structural and photoluminescent properties of ZnO films deposited by radio frequency reactive sputtering

Zinc oxide films with c-axis preferred orientation were deposited on silicon (100) substrates by radio frequency (RF) reactive sputtering. The properties of the samples were characterized by X-ray diffractometer, X-ray photoelectron spectroscopy and fluorescent-spectrophotometer. The effect of sputtering power and substrate temperature on the structural and photoluminescent (PL) properties of the ZnO films was investigated. The results indicated that when the sputtering power is 100 W and the substrate temperature is 300-400 degrees C, it is suitable for the growth of high c-axis orientation and small strain ZnO films. A violet peak at about 380 nm and a blue band at about 430 nm were observed in the room temperature photoluminescence spectra, and the origin of blue emission was investigated.

Studies on state and structure of noble metals in electrocatalyst made by coprecipitation method

The electrocatalysts of Pt/C, PtRu/C and Ru/C were prepared by the impregnation method. The facet characterization, the dispersion and the particle size for the catalysts were determined by means of X-ray diffraction and transmission electron microscopy. X-ray photoelectron spectroscopy was also used to analyze the state and the valency of the noble metals. The results show that the particle size was in nanometer range and the binary metals have come into being an alloy. The platinum in the catalysts existed in zero valency. The valency of the ruthenium on the surface is different from that in the body, while the ruthenium on the surface existed in oxide-form. PtRu/C and Pt/C are of good activity to the electrooxidation of hydrogen except Ru/C. PtRu/C is more tolerant of CO than Pt/C, and CO is only adsorbed on Pt.

Solvothermal synthesis and characterization of Ln (Eu3+, Tb3+) doped hydroxyapatite

Luminescent Ln (Eu3+, Tb3+) doped hydroxyapatite (Eu:HAp, Tb:HAp) phosphors were successfully fabricated via the cetyltrimethylammonium bromide (CTAB)/n-octane/n-butanol/water microemulsion-mediated solvothermal process. The structure, morphology, and optical properties were systematically characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray photoelectron spectra (XPS), Fourier transform infrared spectroscopy (FT-IR), and photoluminescence (PL) spectra as well as the kinetic decays, respectively.

Monodisperse raspberry-like gold submicrometer spheres: Large-scale synthesis and interface assembling for colloid sphere array

We first suggested a one-pot method to synthesize monodisperse raspberry-like submicrometer gold spheres (MRSGS) with high yield. The resulting gold spheres were characterized by scanning electron microscopy, transmission electron microscopy, energy-dispersed X-ray spectroscopy, X-ray photoelectron spectroscopy, X-ray diffraction, and electrochemical technology. It was found that the rough structure provided by raspberry-like gold spheres led to a tremendous electrochemical active area, which was very important because these novel hierarchical gold spheres will probably find important applications in biosensors, electrocatalysis, and others.

Dendrimer films as matrices for electrochemical fabrication of novel gold/palladium bimetallic nanostructures

Electrodeposition of novel Au/Pd bimetallic nanostructures with dendrimer films as matrices has been reported. The dendrimers exhibited highly open structures arising from protonation of amines and this made them have good penetrability for solvent molecules. The unique properties of dendrimers obviously affected the morphologies and compositions of deposited bimetallic nanostructures compared with those from unmodified surfaces. Field-emitted scanning electron microscopy, energy dispersive spectroscopy, X-ray photoelectron spectroscopy and UV-vis spectroscopy were used to characterize these nanostructures.

A simple selenium source to synthesize CdSe via the two-phase thermal approach

A novel selenium source was developed to synthesize the size-controlled CdSe nanocrystals with relatively narrow size distribution successfully in a two-phase thermal approach. A highly reactive and aqueous soluble selenium source was provided by the reduction of selenite, and in this route the size of the nanocrystals can be adjusted by the reaction temperature and time. The size, crystalline structure and optical characteristics of these nanocrystals were investigated by transmission electron microscopy, X-ray powder diffraction, X-ray photoelectron spectroscopy, UV-vis spectroscopy, and photoluminescence spectroscopy. The influence factors for this approach were also discussed.

Grafting BSA onto poly[(L-lactide)-co-carbonate] microspheres by click chemistry

Model protein bovine serum albumin (BSA) was covalently grafted onto poly[(L-lactide)co-carbonate] microsphere surfaces by "click chemistry." The grafting was confirmed by confocal laser scanning microscopy and X-ray photoelectron spectroscopy. The maximum amount of surface-grafted BSA was 45 mg.g(-1). The secondary structure of the grafted BSA was analyzed by FTIR and the results demonstrated that the grafting did not affect protein structure. This strategy can also be used on microspheres prepared from poly(L-lactide)/poly[(L-lactide)-co-carbonate] blend materials.

The synthesis of ionic-liquid-functionalized multiwalled carbon nanotubes decorated with highly dispersed Au nanoparticles and their use in oxygen reduction by electrocatalysis

Multiwalled carbon nanotube (MWCNT)/ionic liquid/gold nanoparticle hybrid materials have been prepared by a chemical route that involves functionalization of MWCNT with amine-terminated ionic liquids followed by deposition of Au. Transmission electron microscopy revealed well-distributed Au with a narrow size distribution centered around 3.3 nm. The identity of the hybrid material was confirmed through Raman and X-ray photoelectron spectroscopy.

Synthesis and assembly of Au-Pt bimetallic nanoparticles

Au-Pt bimetallic nanoparticles (NPs) were synthesized by reducing the mixture of HAuCl4 and K2PtCl6 with ethanol in the presence of cinnamic acid (C6H5CHCHCO2H, CA) through a thermal process. It was found that the isolated NPs could gradually self-assemble into chain-like structures, ultimately to 3-dimensional network nanostructures by adjusting the molar ratio of CA to K2PtCl6. Energy-dispersive Spectroscopy, X-ray photoelectron spectroscopy and X-ray diffraction was used to confirm the formation of Au-Pt bimetallic nanostructures.