低能重离子束对生物分子的辐照效应研究

该文采用L(+)-半胱氨酸及其衍生物和原卟啉Ⅸ二钠盐等生物分子中所没有的铁元素的重离子注入和多种现代仪器分析技术,研究了低能重离子束对生物分子的辐射照应.总之,荷能铁离子束辐照生物分子不但可引起分子的结构损伤,产生新的分子产物,也可沉积在新的改性分子产物之中,直接证实了注入重离子的质量沉积效应,对重离子束生物学的发展提供了重要的理论支持.该文的研究结果还预示着重离子束必将在生物和药物分子改性等研究领域具有重要的实际应用价值.

HIRFL束流发射度测量系统的软件设计

束流发射度测量应用软件是在加速器控制和束流诊断的基础上，为方便加速器调束而设计的集测量、计算、绘图等功能为一体的计算机应用程序。本论文全面论述了在HIRFL束流诊断系统中，利用二次发射束流剖面测量装置和以图像采集处理为基础的多孔屏法测量装置进行束流发射度测量应用软件设计的开发过程。采用面向对象（OOP）的计算机编程技术，结合加速器物理知识、束流诊断技术、调束经验、数据图形化软件设计等多项技术，用VistlalC++6.O编译器完成应用软件的设计，并运行于Windows 9X／2000操作系统平台中。论文中阐述了目前国际上加速器以及HIRFL束流诊断技术的发展现状和本论文的研究工作及其意义；简要概述了几种束流横向参数的测量方法；对三剖面法束流发射度测量系统，包括束流剖面测量的工作原理，信号的传输与预处理，动态链接库的开发和发射度测量原理等作了比较详细地介绍，同时介绍了应用软件中各个功能模块的设计过程。在该系统设计中，本着方便运行人员操作的原则，将束流发射度测量结果形象、直观的显示在操作界面上，并一改以往测量与调节过程相分离的状态，将二者集于一体，使得测量和调节能够同步进行。在多孔屏法发射度测量系统设计中，介绍了系统的总体测量结构，并对用作图像获取的DT3 155接口卡的性能和工作原理作了详细地介绍，对荧光靶图像的处理方法作了较为深入的研究，同时系统的阐述了该系统应用软件的主要设计思想和各功能模块的实现过程。在这套系统中采用了图像变换、边界跟踪等数字图像处理技术，大大减少了数据处理量，提高了图像的处理速度，使得传统的荧光靶定性观测得以发展成实时、精确的定量测量。最后，根据计算机技术，网络信息技术及束流诊断技术的发展趋势，对发射度测量应用软件未来的改进设计作了进一步的设想。这两套应用软件均已在源束线进行了安装和测试，达到了预期的目的，并取得了较为满意的结果，具有实时、快速、精度高、界面直观友好等优点。

多电荷态混合束传输的理论及实验研究

本文对ECR离子源引出的混合束流传输特性进行了较为深入讨论，并在此基础上，对ECR混合束流传输的模拟计算以及空间电荷中和方法，从理论和实验两方面做了较为深入的研究。在同时考虑到离子空间电荷效应，离子一离子碰撞所造成的离子间动量交换，以及离子与管道剩余气体作用、不同电荷态离子之间的作用所造成的电荷交换效应的基础上，结合原子物理方法和蒙特卡罗方法，充分利用计算机可视化程序设计方法，独立成功研制了一套专门的混合束传输程序McIBs1.0，并且对中国科学院近代物理研究所原子试验平台（14.5GHzECR离子源及相关的传输线）做了初步的模拟计算。通过计算发现Glaser透镜确实对离子具有很强的分选作用。同时发现，在一定的条件下，可以依靠Glaser透镜对混合束聚焦形成空心束流。另一方面，对Glaser透镜在ECR混合束传输过程中的作用做了较为深入细致的分析研究。除发现Glaser透镜具有以上所提到的分选功能以及可以在一定条件下形成空心束的功能外，还提出了Glaser透镜和ECR离子源弓！出线包可能能够共同形成磁约束空间电荷透镜的新观点。完成了负高压电极法中和束流空间电荷效应的实验研究，其典型结果是，在负偏压电极加一6KV负高压时，对于O6+，在终端法拉第筒上取得了束流强度与原束流强度相比增加幅度为26％＜△I＜30％的较好试验结果。同时自行构建模型，对其做了仔细的理论分析和计算。针对 ECR高电荷态强流离子束，在该领域首次独立提出使用负电性气体中和高电荷态混合离子束空间电荷效应的新方法，完成实验，证明了其可行性和可靠性。并取得了通过该方法，使O7+束流稳定增加12％、Ar11+束流稳定增长14％、Ar8+稳定增长39％的较好结果。

CSRm内靶实验中的轻离子束流储存寿命研究

束流储存寿命对于储存环的建造和内靶实验都是一个很重要的参数。由于重离子冷却储存环工程的优化，HIRFL-CSR主环将能提供2．SGev的质子束流，这为强子物理研究提供了一个很好的平台。设计并建立一套针对强子物理的内靶系统己经列入到计划当中，与内靶相关的束流储存寿命研究也随之展开。本论文首先分析了在内靶实验中束流储存寿命的影响因素，即真空管道中的残余气体分子、冷却电子束和内靶，以及束内散射和集体效应等，并用理论解析和数值计算的方法，对各种因素的影响程度进行估算。研究表明，内靶散射影响下的束流储存寿命比其他因素导致的短2～3个数量级，内靶是影响束流寿命的决定性因素。其次，对CSRm将来实验中主要用到的Pelle七内靶和碳薄膜靶做了简要介绍，并计算了它们的有效靶厚大约为lx10、切ms／cmZ和5火1017atoms／CmZ。再者，用理论推导方法，对内靶的多次库仑散射和束流能量损失扰动对束流的影响进行了研究，推导了束流的横向和纵向发射度增长与束流每次打靶产生的小库仑散射角均方值气s和相对动量分散气了：之间的关系，并通过数值计算的方法给出了CSRm内靶实验条件的发射度增长曲线。最后，建立了内靶散射的MOnte-Carlo模拟程序，在模拟数据的基础上，总结研究束流的发射度增长规律，以及束流存储寿命与内靶厚度和束流能量的关系。计算表明，当存在Pellet靶（1、1016atoms／cm2）和c膜（5*1017 atoms／cmZ）时，2800Mev质子束的束流储存寿命分别为397秒和0．7秒，将来的内靶实验亮度大约为2 x 1033cm-2·s-1。

HIRFL剥离器后切束线物理设计

HIRFL is a tandem cyclotron complex for heavy ion. On the beam line between SFC and SSC, there is a stripper. Behind it, the distribution of charge states of beam is a Gauss distribution. The equilibrium charge state Q_0 is selected by 1BO2(a 50° dipole behind the stripper) and delivered to SSC. One of two new small beam line (named SLAS) after 1B02 will be builded in or der to split and deliver the unused ions of charge states (Q_0 ± n) to aspecific experimental area. Q_0 ± n ions are septumed and separated from initial(Q_0) ion beam by two septum magnets SM1, SM2. The charge state selected by SM1 will be Q_0 ± 1(6 ≤ Q_0 < 17), Q_0 ± 2(17 ≤ Q_0 < 33) and Q_0 ± 3 (Q_0 ≥ 33) forming a beam in one of the two possine new beam line with the stripping energy of (0.2 to 9.83 Mev/A), an emittance of 10π mm.mrad in the two transverse planes and an intensity ranging from 10~(11) pps for z ≤ 10 to some 10~5 pps for the heaviest element. Behind SM2, a few transport elements (three dipoles and seven qudrupoles) tra nsport Q_0 ± n beam to target positions T1, T2 (see fig. 1) and generate small beam spots (φ ≤ 4mm, φ ≤ 6mm). The optics design of the beam line has been done based on SLAC-75 (a first and second - order matrix theory). beam optics calculation has been worked out with the TRANSPORT program. The design is a very economical thinking, because without building a new accelerator we can obtain a lower energy heavy ion beam to provide for a lot of atomic and solid state physical experiments

Electrical conductivity of a single Au/polyaniline microfiber

We report the measurements of conductivity, I-V curve, and magnetoresistance of a single Au/polyaniline microfiber with a core-shell structure, on which a pair of platinum microleads was attached by focused ion beam. The Au/polyaniline microfiber shows a much higher conductivity (similar to 110 S/cm at 300 K) and a much weaker temperature dependence of resistance [R(4 K)/R(300 K)=5.1] as compared with those of a single polyaniline microtube [sigma(RT)=30-40 S/cm and R(4 K)/R(300 K)=16.2]. The power-law dependence of R(T)proportional to T-beta, with beta=0.38, indicates that the measured Au/polyaniline microfiber is lying in the critical regime of the metal-insulator transition. In addition, the microfiber shows a H-2 dependent positive magnetoresistance at 2, 4, and 6 K.

Surface roughness characterization of soft x-ray multilayer films on the nanometer scale

The soft x-ray reflectivity of multilayer films is affected by the surface roughness on the transverse nanometer scale. Scanning tunneling microscopy (STM) is an ideal instrument for providing high-lateral-resolution roughness measurements for soft x-ray multilayer films that cannot be obtained with other types of instruments on the transverse nanometer scale. The surface roughnesses of Mo/Si, Mo/C, and W/Si soft x-ray multilayer films prepared by an ion-beam-sputtering technique were measured with a STM on the vertical and transverse attributes. The film roughnesses and average spatial wavelengths added to the substrates depend on the multilayer film fabrication conditions, i.e., material combinations, number of layers, and individual layer thickness. These were estimated to lead to a loss of specular reflectivity and variations of the soft x-ray scattering angle distribution. This method points the way to further studies of soft x-ray multilayer film functional properties and can be used as basic guidance for selecting the best coating conditions in the fabrications of soft x-ray multilayer films. (C) 1996 American Vacuum Society.

High laser-induced damage threshold HfO2 films prepared by ion-assisted electron beam evaporation

HfO2 films were deposited by electron beam evaporation with different deposition parameters. The properties such as refractive index, weak absorption, and laser induced damage thresholds (LIDTs) of these films have been investigated. It was found that when pulsed Nd:YAG 1064 nm laser is used to investigate LIDT of films: Metallic character is the main factor that influences LIDTs of films obtained from Hf starting material by ion-assisted reaction, and films prepared with higher momentum transfer parameter P have fewer metallic character; The ion-assisted reaction parameters are key points for preparing high LIDT films and if the parameters are chose properly, high LIDT films can be obtained. (c) 2004 Elsevier B.V. All rights reserved.

Effect of ion-induced damage on GaNAs/GaAs quantum wells grown by plasma-assisted molecular beam epitaxy

The effect of ion-induced damage on GaNAs/GaAs quantum wells (QWs) grown by molecular beam epitaxy employing a DC plasma as the N source was investigated. Ion-induced damage results in: (i) an observed disappearance of pendellosung fringes in the X-ray diffraction pattern of the sample; (ii) a drastic decrease in intensity and a broadening in the full-width at half-maximum of photoluminescence spectra. It was shown that ion-induced damage strongly affected the bandedge potential fluctuations of the QWs. The bandedge potential fluctuations for the samples grown with and without ion removal magnets (IRMs) are 44 and 63 meV, respectively. It was found that the N-As atomic interdiffusion at the interfaces of the QWs was enhanced by the ion damage-induced defects. The estimated activation energies of the N-As atomic interdiffusion for the samples grown with and without IRMs are 3.34 and 1.78 eV, respectively. (C) 2001 Elsevier Science B.V. All rights reserved.

Characterization of strain relaxation in As ion implanted Si1-xGex epilayers grown by gas source molecular beam epitaxy

Strain relaxation in the As ion implanted Si0.57Ge0.43 epilayers was studied by double-crystal x-ray diffractometry and transmission electron microscopy, and was compared to that in the nonimplanted Si0.57Ge0.43 epilayers. Experimental results show that after rapid thermal annealing (RTA) the x-ray linewidth of the As+-implanted Si0.57Ge0.43 epilayers is narrower than that of the nonimplanted epilayers, and than that of the partially relaxed as-grown samples, which is due primarily to low density of misfit dislocations in the As+-implanted SiGe epilayers. RTA at higher than 950 degrees C results in the formation of misfit dislocations for the nonimplanted structures, and of combinations of dislocations and precipitates (tentatively identified as GeAs) for the As+-implanted epilayers. The results mean that the strain relaxation mechanism of the As+-implanted Si1-xGex epilayers may be different from that of the nonimplanted Si1-xGex epilayers. (C) 1998 American Institute of Physics.

REDUCTION OF CRYSTALLINE DISORDER IN MOLECULAR-BEAM EPITAXY GAAS ON SI BY MEV ION-IMPLANTATION AND SUBSEQUENT ANNEALING

Molecular beam epitaxy GaAs films on Si, with thicknesses ranging from 0.9-2.0-mu-m, were implanted with Si ions at 1.2-2.6 MeV to doses in the range 10(15)-10(16) cm-2. Subsequent rapid infrared thermal annealing was carried out at 850-degrees-C for 15 s in a flowing N2 atmosphere. Crystalline quality was analyzed by using Rutherfold backscattering/channeling technique and Raman scattering spectrometry. The experimental results show that the recrystallization process greatly depends on the dose and energy of implanted ions. Complete recrystallization with better crystalline quality can be obtained under proper implantation and subsequent annealing. In the improved layer the defect density was much lower than in the as-grown layer, especially near the interface.