398 resultados para Grating coupling coefficient


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By means of hydrostatic pressure tuning, we have observed the strong-coupling exciton-polariton mode in a planar microcavity with an InGaAs/GaAs quantum well embedded in it, over a pressure range from 0.37 to 0.41 GPa. The experimental data can be fitted very well to a corresponding theoretical formula with a unique value of the vacuum Rabi splitting equal to 6.0 meV. A comparison between pressure tuning and other tuning methods is made as regards to what extent the intrinsic features of the exciton and cavity will be influenced during the tuning procedure.

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The quantum wave function and the corresponding energy levels of the dissipative mesoscopic capacitance coupling circuits are obtained by using unitary and linear transformations. The quantum fluctuation of charge and current in an arbitrary eigenstate of the system have been also given. The results show that the fluctuation of charge and current depends on not only the eigenstate but also the electronic device parameters.

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Electron cyclotron resonance CR) measurements have been carried out in magnetic fields up to 32 T to study electron-phonon interaction in two heavily modulation-delta -doped GaAs/Al0.3Ga0.7As single-quantum-well samples. No measurable resonant magnetopolaron effects were observed in either sample in the region of the GaAs longitudinal optical (LO) phonons. However, when the CR frequency is above LO phonon frequency, omega (LO)=E-LO/(h) over bar, at high magnetic fields (B>27 T), electron CR exhibits a strong avoided-level-crossing splitting for both samples at frequencies close to (omega (LO)+ (E-2-E-1)1 (h) over bar, where E-2, and E-1 are the energies of the bottoms of the second and the first subbands, respectively. The energy separation between the two branches is large with the minimum separation of 40 cm(-1) occurring at around 30.5 T. A detailed theoretical analysis, which includes a self-consistent calculation of the band structure and the effects of electron-phonon interaction on the CR, shows that this type of splitting is due to a three-level resonance between the second Landau level of the first electron subband and the lowest Landau level of the second subband plus one GaAs LO phonon. The absence of occupation effects in the final states and weak screening or this three-level process yields large energy separation even in the presence of high electron densities. Excellent agreement between the theory and the experimental results is obtained.

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InAlAs/InGaAs metamorphic high-electron-mobility transistor structures with different spacer layers on GaAs substrates are characterized by Raman measurements. The influence of In0.52Al0.48As spacer thickness on longitudinal optic phonon-plasmon coupling is investigated. It is found that the intensity of GaAs-like longitudinal optic phonon, which couples with collective intersubband transitions of two-dimensional electron gas, is strongly affected by the different subband energy spacings, subband electron concentrations, and wave function distributions, which are determined by different spacer thicknesses. (C) 2001 American Institute of Physics.

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Optical spectra of CdSe nanocrystals are measured at room temperature under pressure ranging from 0 to 5.2 GPa. The exciton energies shift linearly with pressure below 5.2 GPa. The pressure coefficient is 27 meV GPa(-1) for small CdSe nanocrystals with the radius of 2.4 nm. With the approximation of a rigid-atomic pseudopotential, the pressure coefficients of the energy band are calculated. By using the hole effective-mass Hamiltonian for the semiconductors with wurtzite structure under various pressures, we study the exciton states and optical spectra for CdSe nanocrystals under hydrostatic pressure in detail. The intrinsic asymmetry of the hexagonal lattice structure and the effect of spin-orbit coupling on the hole states are investigated. The Coulomb interaction of the exciton states is also taken into account. It is found that the theoretical results are in good agreement with the experimental values.

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The simple reflection technique is usually used to measure the linear electro-optic (EO) coefficient (Pockels coefficient) in the development of EO polymer thin films. But there are some problems in some articles in the determination of the phase shift between the s and p light modes of a laser beam waveguided into the polymer film while a modulating voltage is applied across the electrodes, and different expressions for the linear EO coefficient measured have been given in these articles. In our research, more accurate expression of the linear EO coefficient was deduced by suitable considering the phase shift between the s and p light modes. The linear EO coefficients of several polymer thin films were measured by reflection technique, and the results of the Linear EO coefficient calculated by different expressions were compared. The limit of the simple reflection technique for measuring the linear EO coefficient of the polymer thin films was discussed.

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The influence of interdot electronic coupling on photoluminescence (PL) spectra of self-assembled InAs/GaAs quantum dots (QDs) has been systematically investigated combining with the measurement of transmission electron microscopy. The experimentally observed fast red-shift of PL energy and an anomalous reduction of the linewidth with increasing temperature indicate that the QD ensemble can be regarded as a coupled system. The study of multilayer vertically coupled QD structures shows that a red-shift of PL peak energy and a reduction of PL linewidth are expected as the number of QD layers is increased. On the other hand, two layer QDs with different sizes have been grown according to the mechanism of a vertically correlated arrangement. However, only one PL peak related to the large QD ensemble has been observed due to the strong coupling in InAs pairs. A new possible mechanism to reduce the PL linewidth of QD ensemble is also discussed.

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Output coupling efficiencies are analyzed for triangular and square microlasers connected with an output waveguide by FDTD simulation. The results show that square resonator with an output waveguide connected to the midpoint of one side can have high output coupling efficiency and a good mode selection.

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Micro-cavity structure composed of silicon wire with 240nm square cross section and two symmetrical sidewall waveguide Bragg gratings is fabricated and studied for the operation under telecommunication wavelengths. Optical filter of quasi-TE mode was realized based on this cavity. In such micro-cavity, optical quality factor (Q) was measured up to 380 with a 4.8nm free spectral range (FSR) and 12dB fringe contrast (FC). The measured group index of silicon waveguide with only 240nm square cross section was between 3.80 and 5.43. It is the first time group delay of silicon wire waveguide with such small core dimension is studied. Larger group delay can be expected after optimizing the design parameters and the fabrication process.

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An index-coupled distributed feedback laser with the sampled grating has been designed and fabricated. The +1(st) order reflection of the sampled grating is utilized for laser single mode operation, which is 1.5329 mu m in the experiment. The sampled grating is formed by a conventional holographic exposure combined with the usual photolithography. The typical threshold current of DFB laser with the sampled grating is 25mA, and the optical output is about 10mW at the injected current of 100mA.

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A linear photodiode array spectrometer based, high resolution interrogation technique for fiber Bragg grating sensors is demonstrated. Spline interpolation and Polynomial Approximation Algorithm (PAA) are applied to the data points acquired by the spectrometer to improve the original PAA based interrogation method. Thereby fewer pixels are required to achieve the same resolution as original. Theoretical analysis indicates that if the FWHM of a FBG covers more than 3 pixels, the resolution of central wavelength shift will arrive at less than 1 pm. While the number of pixels increases to 6, the nominal resolution will decrease to 0.001 pm. Experimental result shows that Bragg wavelength resolution of similar to 1 pm is obtained for a FBG with FWHM of similar to 0.2 nm using a spectrometer with a pixel resolution of similar to 70 pm.

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Novel compact design for 4-channel SOI-based reconfigurable optical add/drop multiplexer using microring resonators is presented and analyzed. Microring resonators have two important attributes as a key new technology for future optical communications, namely functionality and compactness. Functionality refers to the fact that a wide range of desirable filter characteristics can be synthesized by coupling multiple rings. Compactness refers the fact that ring resonators with radii about 30 mu m can lead to large scale integration of devices with densities on the order of 10(4) similar to 10(5) devices per square centimeter. A 4-channel reconfigurable optical add/drop multiplexer comprises a grid-like array of ridge waveguides which perpendicularly cross through each other. SOI-based resonators consisted of multiple rings at each of the cross-grid nodes serve as the wavelength selective switch, and they can switch an optical signal between two ports by means of tuning refractive index of one of the rings. The thermo-optic coefficient of silicon is 1.86x 10(-4) /K. Thus a temperature rise of 27K will increase the refractive index by 5 x 10(-3), which is enough to cause the switching of our designed microring resonators. The thermo-optic effect is used to suppress the resonator power transfer, rather than to promote loss. Thus, the input signal only suffers small attenuation and simultaneously low crosstalk can be achieved by using multiple rings.

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Our configurable optical add/drop multiplexers (OADM) are based on thermally tunable silicon-on-insulator (SOI) Bragg gratings. We have simulated the whole device and get ideal performance. We also tried experiments to explore the process of grating waveguide and got useful results.

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A compact polarization-insensitive 8x8 arrayed waveguide grating with 100GHz channel spacing at 1.55 mu m is presented on the material of silicon on insulator (SOI). Increasing the epitaxial layer thickness can reduce the birefringence of the waveguide, but the wvaeguide's bend radius also increases at the same time. We choose the SOI wafer with 3.0 mu m epitaxial layer to reduce the device's size and designed the appropriate structure of rib wave-guides to eliminate the polarization dependant wavelength shift. Compared to the other methods of eliminating the polarization dependant wavelength shift, the method is convenient and easy to control the polarization without additional etching process. The index differences between TE0 and TM0 of straight and bend waveguides are 1.4x10(-5) and 3.9x10(-5), respectively. The results showed that the polarization dependant wavelength shift is 0.1nm, and the device size is 1.5x1.0 cm(2).

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An enhanced technique for interrogating fiber Bragg grating wavelength shift using cascade wavelength division multiplexer (WDM) couplers was proposed and demonstrated. Three WDM couplers which show a linear filter function over the expected wavelength range are employed and cascaded to track Bragg wavelength shifts. Compared with single WDM demodulator. sharper spectral slope is obtained and considerable linear filter range is kept. The static and dynamic strain sensor demodulation experiments demonstrated that the simple passive technique improves the sensitivity approximately two times and keeps 5nm linear demodulation range based on our devices. The cascade WDM coupler demodulation system has high scan rate which can be used to monitor fast vibration.