A comparison of photoluminescence properties of InGaAs GaAs quantum dots with a single quantum well

Variable temperature photoluminescence (PL) measurements for In0.3Ga0.7As(6 nm)/GaAs(34 nm) quantum dot superlattices with a period of 20 and an In0.3Ga0.7As(6 nm)/GaAs(34 nm) reference single quantum well have been conducted. It is found that the temperature dependence is different between the quantum dots and the reference single quantum well. The PL peak energy of the single quantum well decreases faster than that of the quantum dots with increasing temperature. The PL peak energy for the InGaAs/GaAs quantum dots closely follows the InAs band gap in the temperature range from 11 to 170 K, while the PL peak energy for the InGaAs/GaAs quantum well closely follows the GaAs band gap. In comparison with InAs/GaAs quantum dots, the InGaAs/GaAs quantum dots are more typical as a zero-dimensional system since the unusual PL results, which appear in the former, are not obvious for the latter. (C) 1999 American Institute of Physics. [S0021-8979(99)08615-6].

Self-organization of the InGaAs GaAs quantum dots superlattice

The mechanism of self-organization of quantum dots (QDs) during the growth of InGaAs/GaAs multilayers on GaAs (1 0 0) was investigated with cross-sectional transmission electron microscopy (XTEM), and double-crystal X-ray diffraction (DCXD). We found that the QDs spacing in the first layer can affect the vertical alignment of QDs. There seems to exist one critical lateral QD spacing, below which merging of QDs with different initial size is found to be the dominant mechanism leading to perfect vertical alignment. Once the critical value of QDs spacing is reached, the InGaAs QDs of the first layer are simply reproduced in the upper layers. The X-ray rocking curve clearly shows two sets of satellite peaks, which correspond to the QDs superlattice, and multi-quantum wells (QW) formed by the wetting layers around QDs. (C) 1999 Elsevier Science B.V. All rights reserved.

Structural characterization of InGaAs/GaAs quantum dots superlattice infrared photodetector structures

InGaAs/GaAs quantum dots (QDs) superlattice grown by molecular beam epitaxy (MBE) at different substrate temperatures for fabricating 8-12 mu m infrared photodetector were characterized by transmission electron microscopy (TEM), double-crystal X-ray diffraction (DCXRD) and photoluminescence (PL). High-quality QDs superlattice can be achieved by higher growth temperature. Cross-sectional TEM shows the QDs in the successive layers are vertically aligned along growth direction. Interaction of partial vertically aligned columns leads to a perfect vertical ordering. With increasing number of bilayers, the average QDs size becomes larger in height and rapidly saturates at a certain value, while average lateral length nearly preserves initial size. This change leads to the formation of QDs homogeneous in size and of a particular shape. The observed self-organizations are attributed to the effect of strain distribution at QDs on the kinetic growth process. DCXRD measurement shows two sets of satellite peaks which corresponds to QDs superlattice and multi quantum wells formed by the wetting layers. Kinematical simulations of the wetting layers indicate that the formation of QDs is associated with a decrease of the effective indium content in the wetting layers. (C) 1999 Elsevier Science B.V. All rights reserved.

New method for the growth of highly uniform quantum dots

A new method is realized for the growth of self-formed quantum dots. We identify that dislocation-free islands can be formed by the strain from the strained superlattice taken as a whole. Unlike the Stranski-Krastanow (S-K) growth mode, the islands do not form during the growth of the corresponding strained single layers. Highly uniform quantum dots can be self-formed via this mechanism. The low temperature spectra of self-formed InGaAs/GaAs quantum dot superlattices grown on a (001) GaAs substrate have a full width at half maximum of 26-34 meV, indicating a better uniformity of quantum dot size than those grown in the S-K mode. This method can provide great degrees of freedom in designing possible quantum dot devices. 1998 Published by Elsevier Science B.V. All rights reserved.

Thermal activation and thermal transfer of localized excitons in InAs self-organized quantum dots

We have investigated the temperature dependence of photoluminescence (PL) properties of a number of InAs/GaAs heterostructures with InAs layer thickness ranging from 0.5 monolayer (ML) to 3 ML. The temperature dependence of the InAs exciton energy and linewidth was found to display a significant difference when the InAs layer thickness is smaller or larger than the critical thickness around 1.7 ML, indicating spontaneous formation of quantum dots (QDs). A model, involving exciton recombination and thermal activation and transfer, is proposed to explain the experimental data. In the PL thermal quenching study, the measured thermal activation energies of different samples demonstrate that the InAs wetting layer may act as a barrier for thermionic emission of carriers in high quality InAs multilayers, while in InAs monolayers and submonolayers the carriers are required to overcome the GaAs barrier to thermally escape from the localized states. (C) 1998 Academic Press Limited.

Hydrogen sensors based on Pt-AlGN/AIN/GaN Schottky diode - art. no. 68291R

Pt/AlGaN/AlN/GaN Schottky diodes have been fabricated and characterized for H-2 sensing. Platinum (Pt) with a thickness of 20nm was evaporated on the sample to form the Schottky contact. The ohmic contact, formed by evaporated Ti/Al/Ni/Au metals, was subsequently annealed by a rapid thermal treatment at 860 degrees C for 30 s in N-2 ambience. Both the forward and reverse current of the device increased greatly when exposed to H-2 gas. The sensor's responses under different hydrogen concentrations from 500ppm to 10% H-2 in N-2 at 300K were investigated. A shift of 0.45V at 297K is obtained at a fixed forward current for switching from N-2 to 10% H-2 in N-2. Time response of the sensor at a fixed bias of 0.5 V was also measured. The turn-on response of the device was rapid, while the recovery of the sensor at N-2 atmosphere was rather slow. But it recovered quickly when the device was exposed to the air. The decrease in the barrier height of the diode was calculated to be about 160meV upon introduction of 10% H-2 into the ambient. The sensitivity of the sensor is also calculated. Some thermodynamics analyses have been done according to the Langmuir isotherm equation.

分子组装体的扫描探针显微学研究

本文简要评述了扫描探针显微学研究的发展过程、目前状况及发展方向，着重介绍了扫描探针显微学(SPM)在分子组装体研究中的一些应用。采用扫描探针显微学结合电化学的方法对自组装膜(SAMs)、表面活性剂(surfactant)、纳米颗粒(nanoparticles)等分子组装体系进行了研究，并结合IR、QCM、XPS、XRD等多种手段对分子组装体在电极表面的形态和结构进行了探讨。主要结果如下：1．SPM研究以杂多酸为基础的分子组装体我们通过将AsMo_(11)V0_(40)~(4-)杂多酸阴离子从其酸性溶液中自吸附至金表面的方法，制备了一类新的无机自组装膜。我们利用QCM、STM和电化学方法分别研究了AsMo_(11)VO_(40)~(4-)自组装膜的吸附过程、在Au表面的结构和电化学性质。QCM数据表明这个自组装过程可以用Langmuir吸附等温式来描述，其吸附自由能为-20 KJ/mol。 通过QCM测得的AsMo_(11)VO_(40)~(4-)自组装膜的表面覆盖度的最大值为1.7 * 10~(-10)mol/cm~2，这相当于一个AsMo_(11)VO_(40)~(4-)阴离子的密堆积单层。AsMo_(11)VO_(40)~(4-)自组装膜的循环伏安图上出现三对可逆的氧化还原峰，每对峰所对应的自组装膜的表面覆盖度都亦为1.78 * 10~(-10) mol/cm2，和QCM结果一致。现场STM图像显示AsMo_(11)VO_(40)~(4-)自组装膜十分的均一没有如何多层或聚集体的结构。高分辨STM图进一步显示在Au(111)表面的sMo_(11)VO_(40)~(4-)自组装膜于+0.7 V(vs．Ag | AgCl)表现出二维有序的四方晶体结构，晶格间距为10-11 A。这个值与sMo_(11)VO_(40)~(4-)阴离子的直径十分接近。从STM图我们也估算出AsMo_(11)VO_(40)~(4-)自组装膜的表面覆盖度为1.8 * 10~(-10) mol/cm~2，这和QCM以及电化学的实验结果都很接近。我们进一步研究了一种新的以杂多酸为基础的有机无机复合膜--砷钼钒杂多酸的十一烷基吡啶盐(CPMVA)--的制备、结构和电催化性质。通过在这种盐的丙酮溶液中循环电位扫描，我们可以在HOPG电极表面制备稳定的CPMVA膜。我们利用XPS、STM和电化学多种手段来表征CPMVA膜的结构和性质。这些研究表明：在新剥离HOPG表面CPMVA膜的结构为自聚集的分子团，而在预阴极化HOPG表面CPMVA膜的结构为自有序单层。CPMVA膜在酸性和丙酮溶剂中部表现出可逆的氧化还原动力学行为，这说明这种新类型的膜甚至能在有机溶剂中用作催化剂。当溶液的pH值大于7.O时，CPMVA膜也能维持其稳定性，它对pH值的依赖程度明显小于其无机物形式的膜(H_4AsMo_(11)VO_(40))对pH值的依赖程度。CPMVA膜对Br0_3-的还原表现出很好的电催化活性，催化电流与BrO_3~-的浓度的平方成正比。这种有很高稳定性的新类型杂多酸膜在催化剂领域中将有很广阔的应用前景。2．电化学STM研究吸附在金属表面的表面活性剂聚集体由于电位诱导引起的结构变化表面活性剂在表面的吸附已广泛地被用于限制电极表面的活性和稳定溶液中的胶体和纳米粒子，但是人们对表面活性剂在电极表面的结构和由于电位变化所引起的结构改变并不清楚。在这个工作中我们利用现场STM观察了电位控制下表面活性剂十二烷基磺酸钠(SDS)在Au(111)表面的吸附。STM图像显示通过控制电位SDS在Au(111)表面有一从半圆柱胶束单层向致密双层膜过渡的构象变化。我们也建立了SDS聚集体在Au(111)表面电位诱导结构变化的模型。就我们所知，这是第一次系统地研究表面活性剂聚集体在金属表面的电位诱导结构变化。3．在固体表面构筑有序的聚苯胺分子导线我们提出了一种新的通过分子设计构筑有序聚苯胺分子导线的新方法。首先，根据Saveant的方法我们在HOPG表面修饰上有序的4-氨基苯单层，然后溶液中的苯胺分子通过阶跃的方法被层层电聚合在4-氨基苯单层修饰的HOPG表面，形成有序的聚苯胺分子导线。FTIR-ERS和XPS结果证实HOPG表面上形成了聚苯胺。SPM图显示在HOPG表面的聚苯胺平面结构为有序的3~(1/2) * 3~(1/2) R 30°。小角X-射线反射结果表明聚苯胺分子导线是垂直站立在HOPG表面。电化学测量进一步表明聚苯胺分子导线的形成有利于加速电子传递速率。这种先分子设计后电聚合的方法可能会成为一类在固体表面制备有序导电聚合物分子导线的新方法。依据上一个实验，我们在金表面通过自组装的方法构筑了绝缘分子导线。我们选择β-环糊精(β-CD)作为包络4-氨基硫酚的理想主体分子。β-CD和4-氨基硫酚形成的包络物首先被自组装到Au表面，然后也通过阶跃的方法被层层电聚合在自组装膜修饰的Au表面，形成有序的聚苯胺分子导线。FTIR-ERS和XPS结果证实Au表面上形成了聚苯胺。低电流STM(LC-STM)图像表明在Au(111)表面的聚苯胺分子线为六角的二维有序，分子与分子之间的最相邻距离为15.5±0.5 A。这种先进行CD超分子自组装后电聚合的方法可能会成为一类制备导电聚合物绝缘分子导线的新方法。4．SPM研究在HOPG表面电化学合成的纳米材料我们通过脉冲恒电位方法从稀的苯胺酸性溶液(1mM苯胺 + 1 M HClO_4)在HOPG表面制备聚苯胺纳米颗粒。我们利用FTIR-ERS、XPS、TM-AFM手段来表征聚苯胺纳米颗粒的组成和结构。FTIR-ERS和XPS结果表明制得的聚苯胺纳米颗粒主要以亚胺形式存在。TM-AFM图像显示分散于HOPG表面的聚苯胺纳米颗粒的表面覆盖度约为10~(10)cm~(-2)。这些纳米颗粒都为圆盘型，直径为200到600埃，高度为10到30埃。这些纳米颗粒的大小随聚合电量由5.7 μC/cm~2增加到19.3 μC/cm~2而增大。我们提出了一种通过分子设计在HOPG表面制备金属纳米粒子的新方法。第一步，根据Saveant的方法我们在HOPG表面修饰上一个4-氨基苯单层。第二步，通过配位相互作用Ag~+能在4-氨基功能化的HOPG表面形成单层。第三步，通过脉冲恒电位方法我们就能在4-氨基苯功能化的HOPG制备Ag纳米颗粒。电化学测量证明了在HOPG表面上Ag纳米颗粒的形成。STM图像显示通过这种方法制得的Ag纳米颗粒的大小十分均一且在HOPG表面上的分散度很高。这种新方法可被广泛地用来在碳表面制备各种金属纳米粒子。

单分子膜模板调控氟化钡（氟化钙、硫酸钡－硫酸铅）晶体的生长研究

(1) Langmuir单分子膜对硫酸钡－硫酸铅混晶的影响：在不同的单分子膜下或单分子膜存在下掺杂铅离子时生长的晶体形貌不同。单分子膜对于电荷数相同、离子半径相近的成核离子有选择性。选择性取决于膜头基。(2)压缩单分子膜下氟化钙单晶的生长研究：二十二烷基羧酸单分子膜(BAM)诱导氟化钙晶体沿(110)晶面取向生长。晶体形状规则。但在无单分子膜或未压缩单分子膜下，生成的晶体无特定取向和规则的形貌。(3)氟化钡晶体在Langmuir单分子膜下的选择性结晶：无单分子膜存在时，混合摩尔比为1:2的氯化钡和氟化铵溶液有三种晶体生成。但是在铺展BAM时，可以获得(100)取向的氟化钡单晶。(4)不同单分子膜下氟化钡晶体的生长研究：通过研究不同单分子膜或亚相下氟化钡单晶薄膜。并且发现：亚相溶液的pH值、膜头基的电离程度以及膜头基的种类对于生成晶体的性质都有很大影响。(5)自组装单分子膜诱导氟化钡晶体生长的研究：把三氯锗丙酸组装的亲水的单晶硅片表面作为诱导模板。在自组装模板上得到(100)取向的氟化钡。

表面等离子体共振技术研究生物分子相互作用

本论文利用表面等离子体共振技术（sPR）进行了生物分子间相互作用的研究。主要包括可免疫识别、免疫分析、生物分子相互作用动力学以及层层组装生物分子功能膜等方面的研究。1．利用表面等离子体共振生物传感器对血清中HSA抗体的活性进行了检测。结果表明表面等离子体共振（SPR）生物传感器能快速实时检测anti-HSA抗体的活性，且传感片能够重复使用100次以上。2．应用表面等离子体共振生物传感器实现了对铁蛋白的实时免疫分析。实验中采用"三明治"放大法提高了分析的灵敏度和选择性。结果表明，在血清中分析铁蛋白的线性区间为30-200ng/ml，检测限为28ng/ml。应用pH2.0 glycine-HCl溶液进行再生，传感片可重复使用50次以上。3．通过溶液竞争法实现了S尸R技术对小分子化合物吗啡的检测。结果表明，溶液竞争法大大优于表面竞争法。同时求得了吗啡、mBSA与单抗及多抗之间相互作用的结合常数，并进行了比较。对实验现象给出了动力学上的合理解释。4．研究了通过静电吸附作用，DNA和PDDA交替组装多层膜。实时表面等离子体共振技术实时监测了DNA/PDDA多层膜的形成，研究了DNA在PDDA表面的吸附动力学。电化学阻抗谱和紫外可见光谱的研究结果也表明了这种层层组装多层膜的均一性。5．应用亲合素和生物素之间的强亲和作用，在金表面层层组装了由亲合素／生物素化抗体组成的蛋白质多层膜。使用实时BIA技术监测了多层膜的成膜过程，同时用电化学阻抗和傅立叶红外光谱对多层膜的成膜过程进行了表征。结果都表明了多层膜的均匀生长。同时，我们用亲和素生物素化抗体层层组装所制备的抗体多层膜对hlgG进行了灵敏检测。6．应用实时BIA技术研究了组蛋白与DNA之间的相互作用。发展了新的固定DNA传感片表面，消除了组蛋白与商品化传感片之间的非特异吸附。用Langmuir和Two State Reaction（Coormation change）模型对所得的动力学传感图进行了拟合，初步得到了动力学常数，直观的比较了组蛋白各亚组分与DNA相互作用之间的动力学差异。

CoMoK/γ-Al_2O_3类催化剂的研究

钴离子在γ-Al_2O_3上的吸附等温线符合Langmuir等温式，而钼的吸附等温线符合Freundlich等温式。在等孔体积法制备催化剂时，低PH下由于Al_2O_3吸附钼较多而对钴的吸附较少导致钴、钼在颗粒中分布不均；在高PH值下，由于钼的吸附量锐减，可用共浸法得到钴、钼分布均匀的催化剂。K_2CO_3在均匀型CoMo/Al_2O_3催化剂上的吸附等温线符合Langmuir等温式，虽然吸附量较大，但在浸渍液中今是足够时，等孔体积法也能得到均匀分布的结果。Co/Al_2O_3氧化态催化剂中存在和Al_2O_3表面作用的Co_3O_4及表面Co~(2+)离子；Co~(2+)/Al_2O_3中，K~+的存在减弱了Al_2O_3表面上的Co~(2+)和表面的作用，有是于Co~(2+)的还原和硫化。Mo/Al_2O_3催化剂中Mo以+6价的形式存在于Al_2O_3表面上，Al~(3+)对表面上Mo的极化作用Mo~(6+)在低温易于被部分还原，Mo-o-Al键作用较强，使Mo的完全还原又比MoO_3困难；K~+的存在减弱了MoK/Al_2O_3氧化态催化剂中的Mo-o-Al键强度，有助于Mo的深度还原和硫化。Co, Mo水溶液等孔体积共浸制备的氧化态CoMo/Al_2O_3催化剂中，存在CoMoO_4，并有利于Co, Mo硫化为Co_9S_8和MoS_2；CoMoK/Al_2O_3氧化态催化剂中，K~+的存在破坏了催化剂中CoMoO_4结构，被置换出的Co~(2+)和Al_2O_3表面发生一定作用使Co的硫化程度降低；当K_2CO_3在催化剂中含量小于15wt%时，Mo的硫化随K~+含量增加而增大，但当K_2CO_3在催化剂中含量高于15wt%，Mo的硫化程度随K~+含量增加而微有减少。CoMoK/Al_2O_3, CoMo/Al_2O_3, MoK/Al_2O_3, Mo/Al_2O_3, CoK/Al_2O_3, Co/Al_2O_3催化剂在H_2S/H_2的TPS过程中，H_2S 对活性组份起硫化和还原作用，H_2仅仅是还原了反应中生成的单质S。

INFLUENCES OF ALLOY DISORDER AND INTERFACE ROUGHNESS ON OPTICAL-SPECTRA OF INGAAS/GAAS STRAINED-LAYER QUANTUM-WELLS

We present studies of alloy composition and layer thickness dependences of excitonic linewidths in InGaAs/GaAs strained-layer quantum wells grown by MBE, using both photoluminescence and optical absorption. It is observed that linewidths of exciton spectra increase with indium content and well size. Using the virtual crystal approximation, the experimental data are analyzed. The results obtained show that the alloy disorder is the dominant mechanism for line broadening at low temperature. In addition, it is found that the absorption spectra related to light hole transitions have varied from a peak to a step-like structure as temperature increases. This behavior can be understood by the indirect space transitions of light holes.

CONVERGENT-BEAM ELECTRON-DIFFRACTION STUDY OF GE0.5SI0.5/SI STRAINED-LAYER SUPERLATTICES GROWN BY MOLECULAR-BEAM EPITAXY

Side bands due to purely composition and combined composition-strain modulation in plan-view specimens of a nominally Ge0.5Si0.5(5nm)/Si(25nm) superlattice have been obtained by large-angle convergent-beam electron diffraction. The intensities of the side bands have been calculated from a periodic tension-compression model of the superlattice bilayer using the kinematical theory of electron diffraction. Accurate values of elastic strains in the bilayer and of the Ge content can be obtained in this way.

Growth of high-quality relaxed In0.3Ga0.7As/GaAs superlattices

With a low strained InxGa1-xAs/GaAs(x similar to 0.01) superlattice (SL) buffer layer, the crystal quality of 50 period relaxed In0.3Ga0.7As/GaAs strained SLs has been greatly improved and over 13 satellite peaks are observed from X-ray double-crystal diffraction, compared with three peaks in the sample without the buffer layer. Cross-section transmission electron microscopy reveals that the dislocations due to superlattice strain relaxation are blocked by the SLs itself and are buried into the buffer layer. The role of the SL buffer layer lies in that the number of the dislocations is reduced in two ways: (1) the island formation is avoided and (2) the initial nucleation of the threading dislocations is retarded by the high-quality growth of the SL buffer layer. When the dislocation pinning becomes weak as a result of the reduced dislocation density, the SLs can effectively move the threading dislocations to the edge of the wafer.

Study of GSMBE growth and characteristics of high-quality strained In0.63Ga0.37As/InP quantum wells

High-quality compressively strained In0.63Ga0.37As/InP quantum wells with different well widths (1-11 nm) have been grown coherently on InP substrates using a home-made gas source molecular beam epitaxy (GSMBE) system. The indium composition in the wells of the sample was determined by means of high-resolution X-ray diffraction and its computer simulation. it is found that the exciton transition energies determined by photoluminescence (PL) at 10 K are in good agreement with those calculated using a deformation potential model. Sharp and intense peaks for each well can be well resolved in the 10 K PL spectra. For wells narrower than 4 nm, the line width of the PL peaks are smaller than the theoretical values of the line-width broadening due to 1 hit interface fluctuation, showing that the interface fluctuation of our sample is within 1 ML. For wells of 7 and 9 nm, the PL peak widths are as low as 4.5 meV.

Lateral periodicity in highly-strained (GaIn)As/Ga(PAs) superlattices investigated by X-ray scattering techniques

In this work we investigate the lateral periodicity of symmetrically strained (GaIn)As/GaAs/Ga(PAs)/GaAs superlattices by means of X-ray scattering techniques. The multilayers were grown by metalorganic Vapour phase epitaxy on (001)GaAs substrates, which were intentionally off-oriented towards the [011]-direction. The substrate off-orientation and the strain distribution was found to affect the structural properties of the superlattices inducing the generation of laterally ordered macrosteps. Several high-resolution triple-crystal reciprocal space maps, which were recorded for different azimuth angles in the vicinity of the (004) Bragg diffraction and contour maps of the specular reflected beam collected in the vicinity of the (000) reciprocal lattice point, are reported and discussed. The reciprocal space maps clearly show a two-dimensional periodicity of the X-ray peak intensity distribution which can be ascribed to the superlattice periodicity in the direction of the surface normal and to a lateral periodicity in a crystallographic direction coinciding with the miscut orientation. The distribution and correlation of the vertical as well as of the lateral interface roughness was investigated by specular reflectivity and diffuse scattering measurements. Our results show that the morphology of the roughness is influenced by the off-orientation angle and can be described by a 2-dimensional waviness.