大功率微波与臭氧等复合因子对大棚蔬菜根结线虫及土壤的作

虫（nematodes）是世界农业生产的一大障碍，每年给世界农业生产造成约1000亿美元的巨额损失，是世界各国一直关注的重点病害之一。线虫可以危害各种大田作物和各种温室植物，几乎所有的栽培植物都有线虫危害发生。随着人们环保意识的增强以及健康意识的觉醒，传统防治根结线虫的药物如溴甲烷等因对环境的破坏作用，或者由于高毒、使用不便、抗药性等原因而迅速退出历史舞台，研究环保高效防治线虫成为世界各国竞相发展的技术之一。本研究尝试通过物理方式防治蔬菜根结线虫，并调查了对土壤质量的影响，主要内容包括： 1. 设计制造了功率20 Kw，频率为915 MHz的大功率土壤微波处理机，并通过了田间试验; 2. 设计制造了每小时120 g臭氧产量的便携式臭氧土壤处理机，并通过了田间试验; 3. 采用4因素3水平正交法L9(34)在山东寿光蔬菜大棚进行了蔬菜根结线虫的防治试验，综合考察微波、臭氧、微波吸收剂、EM菌等不同处理水平对根结线虫和对土壤质量的影响，结果表明： 1) 大棚土壤经微波60 s照射能够显著降低甜瓜根结线虫数和根结指数（p < 0.05），盆栽试验只需处理10 s即可显著防治甜瓜根结线虫（p < 0.01）;以120 g/h臭氧浓度处理5 s也能显著降低甜瓜根结线虫的数量（p < 0.05）;田间施入5 g/m2的EM菌，能够显著降低甜瓜根结线虫的数量（p < 0.05）;盆栽试验中微波吸收剂具有降低根结线虫数量的趋势，但是不同处理水平之间差异不显著，田间试验则具有增加根结线虫的趋势，不同处理水平之间也没有显著差异。 2) 微波不同处理水平之间对甜瓜单瓜重的影响没有显著差异;以120 g/h臭氧浓度处理甜瓜能够显著增加甜瓜单瓜重（p < 0.05）;200 g/m2微波吸收剂能够显著提高甜瓜单瓜重（p < 0.05）;以5 g/m2EM菌处理土壤则显著降低甜瓜单瓜重（p < 0.05）。 3) 微波、臭氧、微波吸收剂不同处理水平对甜瓜糖度的影响没有显著差异;以3 g/m2的EM菌处理甜瓜能够显著降低甜瓜的糖度。 4) 不同因素对甜瓜硬度的影响没有显著差异。 5) 微波处理60 s能够显著提高甜瓜的果型指数（p < 0.1），臭氧、微波吸收剂、EM菌等因素不同处理水平之间对果型指数影响差异不显著。 6) EM菌5 g/m2处理浓度能够显著降低甜瓜株高（p < 0.1），微波、臭氧、微波吸收剂不同处理水平之间对株高的影响没有显著差异。 7) EM菌5 g/m2处理浓度能够显著降低甜瓜根径（p < 0.1），微波、臭氧、微波吸收剂不同处理水平之间对根径的影响没有显著差异。 8) 微波处理60 s能够显著降低表层土壤（0-5 cm）的有机质含量（p < 0.01）;以120 g/h的臭氧浓度处理，则可以显著提高10-15 cm土壤的有机质含量（p < 0.05），其它处理因素的不同水平对有机质的影响差异不显著。 9) 微波不同处理水平对土壤全氮的影响没有显著差异（p < 0.05）;120 g/h臭氧处理浓度能够显著降低表层土壤（0-5 cm）的土壤全氮量（p < 0.1）;100 g/m2微波吸收剂处理水平能够显著提高10-15 cm土壤全氮量（p < 0.05）;EM菌3 g/m2的处理水平则显著降低5-10 cm土壤全氮量（p < 0.05）。 10) 微波、微波吸收剂、EM菌不同处理水平之间对土壤全磷没有显著影响;240 g/h臭氧浓度处理5 s能够显著降低10-15 cm土层的土壤全磷含量(p < 0.05)。 11) 微波、微波吸收剂对土壤全磷没有显著影响;臭氧处理具有降低土壤有效磷的趋势，EM菌处理则有提高土壤有效磷的趋势，但是 不同处理水平之间差异不显著（p > 0.05）。 12) 微波处理对土壤EC值没有显著影响;臭氧、微波吸收剂、EM菌处理具有降低土壤EC值的趋势，但是不同处理水平之间差异不显著（p > 0.05）。 13) 微波处理30 s能够显著降低表层土壤的pH值（p < 0.05），臭氧、微波吸收剂、EM菌处理具有提高土壤pH值的趋势，但是不同处理水平之间差异不显著。

A Diode-Side-Pumped Dynamic Fundamental Mode Nd:YAG Laser

A fundamental mode Nd YAG laser is experimentally demonstrated with a stagger pumped laser module and a special resonator. The rod is pumped symmetrically by staggered bar modules. A dynamic fundamental mode is achieved with the special resonator under different pump levels. A maximal continuous wave output of 61 W (M-2 = 1.4) is achieved with a single rod. An average output of 47 W, pulse width of 54 ns, pulse energy of 4.7 mJ and peak power of 87 kW are obtained under the Q-switched operation of 10 kHz.

The junction temperature and forward voltage relationship of GaN-based laser diode

In GaAs-based light-emitting diode (LED) or laser diode (LD), the forward voltage (V) will decrease linearly with the increasing junction temperature (T). This can be used as a convenient method to measure the junction temperature. In GaN-based LED, the relationship is linear too. But in GaN-based LD, the acceptor M (g) in p-GaN material can not ionize completely at-room temperature, and the carrier density will change with temperature. But we find finally that, this change won't lead to a nonlinear relationship of V-T. Our experiments show that it is Linear too.

Defects around self-organized InAs quantum dots measured by slow positron beam

Self-organized InAs quantum dots (QDs) have been fabricated by molecular beam epitaxy. The authors try to use a slow positron beam to detect defects in and around self-organized QDs, and point defects are observed in GaAs cap layer above QDs. For the self-organized InAs QDs without strain-reducing layer, it is free of defects. However, by introducing a strain-reducing layer, the density of point defects around larger sized InAs QDs increased. The above results suggest that low energy positron beam measurements may be a good approach to detect depth profiles of defects in QD materials. (c) 2007 American Institute of Physics.

Effect of oxidation on the optical and surface properties of AlGaN

The chemical properties of AlxGa1-xN surfaces exposed to air for different time periods are investigated by atomic force microscopy (AFM), photoluminescence (PL) measurement and X-ray photoelectron spectroscopy (XPS). PL and AFM results show that AlxGa1-xN samples exhibit different surface characteristics for different air-exposure times and Al contents. The XPS spectra of the Al 2p and Ga 2p core levels indicate that the peaks shifted slightly, from an Al-N to an Al-O bond and from a Ga-N to a Ga-O bond. All of these results show that the epilayer surface contains a large amount of Ga and Al oxides. (c) 2006 Elsevier B.V. All rights reserved.

The effect of AlN growth time on the electrical properties of Al0.38Ga0.62N/AlN/GaN HEMT structures

Al0.38Ga0.62N/AIN/GaN HEMT structures have been grown by metal-organic chemical vapor deposition (MOCVD) on 2-inch sapphire substrates. Samples with AIN growth time of 0s (without AIN interlayer), 12, 15, 18 and 24s are characterized and compared. The electrical properties of two-dimensional electron gas (2DEG) are improved by introducing AIN interlayers. The AIN growth time in the range of 12-18s, corresponding to the AIN thickness of 1-1.5 nm, is appropriate for the design of Al0.38Ga0.62N/AIN/GaN HEMT structures. The lowest sheet resistance of 277 Omega sq(-1) and highest room temperature 2DEG mobility of 1460 cm(2)V(-1) s(-1) are obtained on structure with AIN growth time of 12s. The structure with AIN growth time of 15s exhibits the highest 2DEG concentration of 1.59 x 10(13) cm(-2) and the smallest RMS surface roughness of 0.2 nm. (c) 2006 Elsevier B.V. All rights reserved.

A novel application to quantum dot materials to the active region of superluminescent diodes

We have proposed a new superluminescent diodes (SLD) aimed at wide spectrum-quantum dot superluminescent diodes (QD-SLD), which is characterized by the introduction of a self-assembled asymmetric quantum dot pairs active region into conventional SLID structure. We investigated the structure and optical properties of a bilayer sample with different InAs deposition amounts in the first and second layer. We find that the structure of a self-assembled asymmetric quantum dot pairs can operate up to a 150 nm spectral width. In addition, as the first QDs' density can modulate the density of the QDs on the second layer, due to relatively high QDs density of the first layer, we can get the strong PL intensity from a broad range. We think that for the broad spectral width and the strong PL intensity, this structure can be a promising candidate for QW-SLD. (C) 2002 Elsevier Science B.V. All rights reserved.

Lasing of CdSexS1-x quantum dots in a glass spherical microcavity

A glass spherical microcavity only a few microns in diameter embedded with CdSexS1-x quantum dots (QDs) was fabricated using a physical method; it exhibited good optical stability under continuous-wave laser excitation with high power. We investigated the excitation power dependences of the emission intensity and the linewidth of both transverse electric and transverse magnetic resonance peaks of whispering gallery modes. Stimulated emission behaviour of multi-frequency modes is observed at room temperature. The low threshold value and large mode separation makes QD-containing microspheres promising for visible microlaser applications.

Room-temperature, ground-state lasing for red-emitting vertically aligned InAlAs/AlGaAs quantum dots grown on a GaAs(100) substrate

The effect of the growth temperature on the properties of InAlAs/AlGaAs quantum dots grown on GaAs(100) substrates is investigated. The optical efficiency and structural uniformity are improved by increasing the growth temperature from 530 to 560 degreesC. The improvements of InAlAs/AlGaAs quantum-dot characteristics could be explained by suppressing the incorporation of oxygen and the formation of group-III vacancies. Furthermore, edge-emitting laser diodes with six quantum-dot layers grown at 560 degreesC have been fabricated. Lasing occurs via the ground state at 725 nm, with a room-temperature threshold current density of 3.9 kA/cm(2), significantly better than previously reported values for this quantum-dot systems. (C) 2002 American Institute of Physics.

AlGaInP visible quantum well lasers for information technology

650 nm-range AlGaInP multi-quantum well (MQW) laser diodes grown by low pressure metal organic chemical vapor deposition (LP-MOCVD) have been studied and the results are presented in this paper. Threshold current density of broad area contact laser diodes can be as low as 350 A/cm(2). Laser diodes with buried-ridge strip waveguide structures were made, threshold currents and differential efficiencies are (22-40) mA and (0.2-0.7) mW/mA, respectively. Typical output power for the laser diodes is 5 mW, maximum output power of 15 mW has been obtained. Their operation temperature can be up to 90 degrees C under power of 5 mW. After operating under 90 degrees C and 5 mW for 72 hrs, the average increments for the threshold currents of the lasers at 25 degrees C and the operation currents at 5 mW (at 25 degrees C) are (2-3) mA and (3-5) mA, respectively. Reliability tests showed that no obvious degradation was observed after 1400 hours of CW operation under 50 degrees C and 2.5 mW.

A New Technique for Side Pumping of Double-Clad Fiber Lasers

We report a new technique, called SAP, for side pumping of double-clad, rare-earth-doped fiber lasers using fiber-coupled pump sources. The highest coupling efficiency can even exceed 92% in theory with this structure.

A novel photonic crystal vertical cavity surface emitting laser based on coherent coupling

We demonstrate a novel oxide confined GaAs-based photonic crystal vertical cavity surface emitting laser (PC-VCSEL) operating at a wavelength of 850 nm based on coherent coupling. A ring-shaped light-emitting aperture is added to the conventional PC-VCSEL, and coherent coupling is achieved between the central defect aperture and the ring-shaped light-emitting aperture. Measurements show that under the continuous-wave (CW) injected current of 20 mA, a high power of 2 mW is obtained, and the side mode suppression ratio (SMSR) is larger than 20 dB. The average divergence angle is 4.2 degrees at the current level of 20 mA. Compared with the results ever reported, the divergence angle is reduced.

Tunable parametric fluorescence using a single crystal

In this paper, we investigate the mechanism of tunable parametric superfluorescence (PS) based on the second harmonic generation and parametric processes taking place in the same nonlinear crystal (BBO). The tunable spectra of PS has been generated between 480 nm and 530 nm, which is pumped by the second-harmonic from the high-power Ti: sapphire laser system at 1 kHz repetition rate. We present the generation mechanism of PS theoretically and simulate the process of PS ring using the amplification transfer function. The experiment and the theory show that PS will appear when the phase matching angle for second-harmonic generation is close to the optimal pump angle for optical parametric generation, and then the tunable spectra of PS are generated by slightly adjusting the crystal angle. The result provides a theoretical basis for controlling the generation of PS and quantum entanglement states, which is of great significance for the development of quantum imaging, quantum communications and other applieations.

Fiber Optic Coupling of CW Linear Laser Diode Array

Based on a set of microoptics the output radiation from a continuous wave (CW) linear laser diode array is coupled into a multi-mode optical fiber of 400 ptm diameter. The CW linear laser diode array is a 1 cm laser diode bar with 19 stripes with 100 fxm aperture spaced on 500 (xm centers. The coupling system contains packaged laser diode bar, fast axis collimator, slow axis collimation array, beam transformation system and focusing system. The high brightness, high power density and single fiber output of a laser diode bar is achieved. The coupling efficiency is 65% and the power density is up to 1.03 * 10~4 W/cm~2.

Design of side-pumped Nd : YAG lasers

Design of the typical laser diode side-pumped Nd:YAG rod system has been discussed using the conventional ray tracing method in this paper. Firstly introduce two basic matrices, refractional and translational matrix, described the transmission of nonparaxial light ray in the medium without concerning the absorption of light. And then, using those matrices, analyze the distribution of pump light in the crystal respectively under the condition of directly pumped system and indirectly pumped system with a cylindrical quartz rod as focusing lens. From the result of simulation, we compare the advantage and disadvantage of the two pumped method, and mainly consider how to select the diameter of the focus lens and cooling tube, indicate the effect of deionized water and cooling tube have on the pump light distribution in the active material. At last, make some conclusions about the side-pumped Nd:YAG laser system.