Ti离子的高电离态激发光谱的实验研究

报道在中国原子能研究院HI-13串列加速器上用束-箔技术研究120MeV的Ti离子和C箔相互作用产生的高电离态离子谱的实验结果.在120-220nm范围,观测到53条激发能级的发射的谱线,其中有11条谱线是新确认的,实验结果与激光等离子体实验和理论结果相符合.

高电荷态离子~(126)Xe~(q+)与Ti固体表面作用的激发光谱

报道用 15 0keV的高电荷态离子1 2 6 Xeq + (6≤q≤ 30 )轰击Ti固体表面产生 2 0 0— 10 0 0nm波段发射光谱的实验结果 .结果显示 ,用电荷态足够高的离子作光谱激发源 ,无需很强的束流强度 (nA量级 ) ,便可激发起样品表面的原子和离子在可见光波段的特征谱线 .当入射离子剥离度q >qc≈ 2 0时 ,Ti原子及其离子的特征谱线强度突然显著增强 ;不同金属靶 ,特征谱线突然增强的qc值不同 .理论分析表明 ,这与q大于此临界值后 ,单电子转移释放能量激发靶材料传导电子气体的表面等离激元密切相关 .

Field emission from the structure of well-aligned TiO2/Ti nanotube arrays

Well-aligned TiO2/Ti nanotube arrays were synthesized by anodic oxidation of titanium foil in 0.5 wt.% HF in various anoclization voltages. The images of filed emission scanning electron microscopy indicate that the nanotubes structure parameters, such as diameter, wall thickness and density, can be controlled by adjusting the anoclization voltage. The peaks at 25.3 degrees and 48.0 degrees of X-ray diffraction pattern illuminate that the TiO2 nanotube arrays annealed at 500 degrees C are mainly in anatase phase. The filed emission (FE) properties of the samples were investigated. A turn-on electric field 7.8 V/mu m, a field enhancement factors approximately 870 and a highest FE current density 3.4 mA/cm(2) were obtained. The emission current (2.3 mA/cm(2) at 18.8 V/mu m) was quite stable within 480 min. The results show that the FE properties of TiO2/Ti have much relation to the structure parameters.

Synthesis and field emission of diamond-like carbon nanorods on TiO2/Ti nanotube arrays

Highly ordered TiO2/Ti nanotube arrays were fabricated by anodic oxidation method in 0.5 wt% HF. Using prepared TiO2/Ti nanotube arrays deposited Ni nanoparticles as substrate, high quality diamond-like carbon nanorods (DLCNRs) were synthesized by a conventional method of chemical vapor deposition at 750 degrees C in nitrogen atmosphere. DLCNRs were analyzed by filed emission scanning electron microscopy and Raman spectrometer. It is very interesting that DLCNRs possess pagoda shape with the length of 3-10 mu m. Raman spectra show two strong peaks about 1332 cm (1) and 1598 cm (1), indicating the formation of diamond-like carbon. The field emission measurements suggest that DLCNRs/TiO2/Ti has excellent field emission properties, a low turn-on field about 3.0 V/mu m, no evident decay at 3.4 mA/cm(2) in 480 min. (C) 2009 Elsevier B. V. All rights reserved.

Photoluminescence character of Xe ion irradiated sapphire

In the present work the photoluminescence (PL) character of sapphire implanted with 180 keV Xe and irradiated with 308 MeV Xe ions was studied. The virgin, implanted and irradiated samples were investigated by PL and Fourier transform infrared (FTIR) spectra measurements. The obtained PL spectra showed the maximum emission bands at 2.75, 3.0 and 3.26 eV for the implanted fluence of 1.0 x 10(15) ions/cm(2) and at 2.4 and 3.47 eV for the irradiated fluence of 1.0 x 10(13) ions/cm(2). The FTIR spectra showed a broaden absorption band between 460 and 630 cm(-1), indicating that strong damaged region formed in Al2O3.

Effects of annealing on the photoluminescence of He ion implanted sapphire after 230-MeV Pb ion irradiation

Single crystal sapphire (Al2O3) samples implanted with 110 keV He and irradiated at 320 K by Pb-208(27), ions with energy of 1.1 MeV/u to the fluences ranging from 1 X 10(12) to 5 X 10(14) ion/cm(2) and subsequently annealed at 600, 900 and 1100 K. The obtained PL spectra showed that emission peaks centred at 375, 390, 413, and 450 nm appeared in irradiated samples. The peak of 390 ran became very intense after 600 K annealing. The peak of 390 nm weakened and 510 nm peak started to build up at 900 K annealing, the peak of 390 nm vanished and 510 nm peak increased with the annealing temperature rising to 1100 K. Infrared spectra showed a broadening of the absorption band between 460 cm(-1), and 510 cm(-1) indicating strongly damaged regions being formed in the Al2O3 samples and position shift of the absorption band at 1000-1300 cm(-1) towards higher wavenumber after Pb irradiation.

Photoluminescence of inert-gas ion implanted sapphire after 230-MeV Pb ion irradiation

In the present work the photoluminescence (PL) character of sapphire implanted with 110-keV He, Ar or Ne ions and subsequently irradiated with 230-MeV Pb was studied. The implantation was performed at 320 and 600 K using fluences from 5.0 x 10(16) to 2.0 x 10(17) ions/cm(2). The Pb ion irradiation was carried out at 320 K. The obtained PL spectra showed peaks at 375, 413 and 450 nm with maximum intensity at an implantation fluence of 5.0 x 10(16) ions/cm(2) and a new peak at 390 nm appeared in the He-implanted and subsequently Pb-irradiated samples. Infrared spectra showed a broadening of the absorption band between 460 and 510 nm indicating strongly damaged regions formed in the Al2O3 samples. A possible PL mechanism is discussed.

Field emission from TiO2/Ti nanotube arrays with different morphologies

Well-aligned TiO2/Ti nanotube arrays were electrochemically formed in a HF solution for different anodization times. Field emission scanning electron microscopy (FE-SEM) images reveal that anodization time had a great influence on the morphology of TiO2/Ti nanotube arrays. The composition of resulting nanotubes was analyzed by X-ray photoelectron spectroscopy (XPS). Field emission properties of the prepared samples with different morphologies were investigated by the Fowler-Nordheim (F-N) theory. The results indicate that the morphology can affect field emission behaviors. TiO2/Ti nanotube arrays with clear, uniform, and short nanotubes display moderate field emission properties, and have the better turn-on field of 4.6 V/mu m and good field emission stability. (C) 2010 Elsevier B.V. All rights reserved.

Enhanced photoluminescence of Ar+ implanted sapphire before and after annealing

In this paper, we studied the changes in the photoluminescence spectra of the Ar+ ion implanted monocrystalline sapphire annealed at different atmospheres and different temperatures. Single crystals of sapphire (Al2O3) with the (1 0 (1) over bar 0) (m-samples) orientation were implanted at 623 K with 110 keV Ar+ ions to a fluence of 9.5 x 10(16) ions/cm(2). Photoluminescence measurement of the as-implanted sample shows a new emission band at 506 nm, which is attributed to the production of interstitial Al atoms. The intensity of emission band at 506 nm first increased then decreased with increase in annealing temperature. For the same annealing temperature, the intensity of PL peak at 506 nm of the sample annealed in air was higher than the sample annealed in vacuum. The experimental results show that the intensity of the PL peak at 506 nm of Ar-implanted sapphire can be enhanced by subsequent annealing with an enhancement of nearly 20 times. The influence of thermal annealing of the Ar-implanted samples on the new 506 nm emission band was discussed. (C) 2009 Elsevier B.V. All rights reserved.

Au LX射线发射截面和Al、Ti、Ni表面可见、红外光谱测量

本实验工作是在中国原子能科学研究院的HI-13串列加速器国家实验室第二测量厅原子物理实验平台上完成。本工作采用能量为20-50MeV的高电荷态O5+离子去轰击Au, 测量了不同能量下Au的L1、Lα、Lβ、Lγ的X射线谱，计算了不同能量下各条X射线的产生截面，并与ECPSSR理论计算结果进行了比较。实验结果表明σ（Ll）/σ(Lα) 和σ（Lγ）/σ(Lα)与ECPSSR理论计算结果符合比较好，而对于σ（Lβ）/σ(Lα)，在较低能区实验值略高于理论值。在中国科学院近代物理研究所320kV高电荷态离子实验研究平台上测量了Xeq+ (q=17-29)入射Al、Ti和Ni等表面诱发的可见光和红外光。通过对靶原子光谱线的研究，实验发现，随着入射离子的电荷态增高，原子和离子的各种光谱线可得到有效地激发。低速高电荷态离子入射金属固体表面，靶原子的特征谱线的激发强度，与入射离子的电荷态q密切相关。qc的实验测量值和理论计算值符合的较好

TI／AL系统离子束混合研究

本文用100KW Ar~2离子在低温下对Tl/AL薄膜进行了混合束研究。实验试样是在单晶硅上蒸镀约5000A的铝膜，相继再蒸上所需不同厚度的钛膜。用2.0Hev α粒子对注入前后的样品进行了RBS分析。经过仔细的实验数据处理，结果发现：T1／AL界面原子混合量σ~2跟注入剂量φ成线性关系，界面的氧化层对T1／AL界面区原子间的相互混合有一定的影响；在相同注入条件下，界面原子混合σ~2随钛膜厚度的变化成一定的规律。另外，还就Ti/AL离子事混合进行了计算机Nonte Carto模拟计算，并与实验结果进行了比较和讨论