Dislocation theory of the fracture criterion for anisotropic solids

A dislocation theory of fracture criterion for the mixed dislocation emission and cleavage process in an anisotropic solid is developed in this paper. The complicated cases involving mixed-mode loading are considered here. The explicit formula for dislocations interaction with a semi-infinite crack is obtained. The governing equation for the critical condition of crack cleavage in an anisotropic solid after a number dislocation emissions is established. The effects of elastic anisotropy, crack geometry and load phase angle on the critical energy release rate and the total number of the emitted dislocations at the onset of cleavage are analysed in detail. The analyses revealed that the critical energy release rates can increase to one or two magnitudes larger than the surface energy because of the dislocation emission. It is also found elastic anisotropy and crystal orientation have significant effects on the critical energy release rates. The anisotropic values can be several times the isotropic value in one crack orientation. The values may be as much as 40% less than the isotropic value in another crack orientation and another anisotropy parameter. Then the theory is applied to a fee single crystal. An edge dislocation can emit from the crack tip along the most highly shear stressed slip plane. Crack cleavage can occur along the most highly stressed slip plane after a number of dislocation emissions. Calculation is carried out step by step. Each step we should judge by which slip system is the most highly shear stressed slip system and which slip system has the largest energy release rate. The calculation clearly shows that the crack orientation and the load phase angle have significant effects on the crystal brittle-ductile behaviours.

Size Effect and Geometrical Effect of Polycrystals and Thin Film/Substrate System in Micro-indentation Test

Micro-indentation test at scales on the order of sub-micron has shown that the measured hardness increases strongly with decreasing indent depth or indent size, which is frequently referred to as the size effect. Simultaneously, at micron or sub-micron scale, the material microstructure size also has an important influence on the measured hardness. This kind of effect, such as the crystal grain size effect, thin film thickness effect, etc., is called the geometrical effect by here. In the present research, in order to investigate the size effect and the geometrical effect, the micro-indentation experiments are carried out respectively for single crystal copper and aluminum, for polycrystal aluminum, as well as for a thin film/substrate system, Ti/Si3N4. The size effect and geometrical effect are displayed experimentally. Moreover, using strain gradient plasticity theory, the size effect and the geometrical effect are simulated. Through comparing experimental results with simulation results, length-scale parameter appearing in the strain gradient theory for different cases is predicted. Furthermore, the size effect and the geometrical effect are interpreted using the geometrically necessary dislocation concept and the discrete dislocation theory. Member Price: $0; Non-Member Price: $25.00

七氟丁酸酐有序超薄膜的制备与结构

在涂敷有聚合物PEI涂层的单晶硅表面上制备了HFBA单层分子膜,接触角测量及XPS结果表明,HFBA在PEI表面产生了化学吸附发生了化学键合(酰胺键),形成了低表面能的HFBA单分子层膜.这一吸附反应的动力学行为可能表现为Langmuir单分子层化学吸附.

Growth of Silicon Carbide Bulk Crystals by Physical Vapor Transport Method and Modeling Efforts in the Process Optimization

Silicon carbide bulk crystals were grown in an induction-heating furnace using the physical vapor transport method. Crystal growth modeling was performed to obtain the required inert gas pressure and temperatures for sufficiently large growth rates. The SiC crystals were expanded by designing a growth chamber having a positive temperature gradient along the growth interface. The obtained 6H-SiC crystals were cut into wafers and characterized by Raman scattering spectroscopy and X-ray diffraction, and the results showed that most parts of the crystals had good crystallographic structures.

Room-temperature ferromagnetic semiconductor MnxGa1-xSb

Ferromagnetic semiconductor MnxGa1-xSb single crystals were fabricated by Mn-ions implantation, deposition, and the post annealing. Magnetic hysteresis-loops in the MnxGa1-xSb single crystals were obtained at room temperature (300 K). The structure of the ferromagnetic semiconductor MnxGa1-xSb single crystal was analyzed by Xray diffraction. The distribution of carrier concentrations in MnxGa1-xSb was investigated by electrochemical capacitance- voltage profiler. The content of Mn in MnxGa1-xSb varied gradually from x = 0.09 near the surface to x = 0 in the wafer inner analyzed by X-ray diffraction. Electrochemical capacitance-voltage profiler reveals that the concentration of p-type carriers in MnxGa1-xSb is as high as 1 1021 cm-3, indicating that most of the Mn atoms in MnxGa1-xSb take the site of Ga, and play a role of acceptors.

Molecular dynamics simulation of hydrogen enhancing dislocation emission

The interactive pair potential between Al and H is obtained based on the ab initio calculation and the Chen-Mobius 3D lattice inversion formula. By utilizing the pair potentials calculated, the effects of hydrogen on the dislocation emission from crack tip have been studied. The simulated result shows that hydrogen can reduce the cohesive strength for Al single crystal, and then the critical stress intensity factor for partial dislocation emission decreases from 0.11 MPa root m (C-H = 0) to 0.075 MPa root m (C-H=0.72%) and 0.06 MPa root m (C-H = 1.44%). This indicates thar hydrogen can enhance the dislocation emission. The simulation also shows that atoms of hydrogen can gather and turn into small bubbles, resulting in enhancement of the equilibrium vacancy concentration.

Optical fringe multiplication technique with TEM nano-moiré method

In this paper, a nano-moiré fringe multiplication method is proposed, which can be used to measure nano-deformation of single crystal materials. The lattice structure of Si (111) is recorded on a film at a given magnification under a transmission microscope, which acts as a specimen grating. A parallel grating (binary type) on glass or film is selected as a reference grating. A multiplied nano-moiré fringe pattern can be reproduced in a 4f optical filter system with the specimen grating and the prepared reference grating. The successful results illustrate that this method can be used to measure deformation in nanometre scale. The method is especially useful in the measurement of the inhomogeneous displacement field, and can be utilized to characterize nano-mechanical behaviour of materials such as dislocation and atomic bond failure.

A Study of Size-Dependent Microindentation

We recently proposed a strain gradient theory to account for the size dependence of plastic deformation at micron and submicron length scales. The strain gradient theory includes the effects of both rotation gradient and stretch gradient such that the rotation gradient influences the material character through the interaction between the Cauchy stresses and the couple stresses; the stretch gradient measures explicitly enter the constitutive relations through the instantaneous tangent modulus. Indentation tests at scales on the order of one micron have shown that measured hardness increases significantly with decreasing indent size. In the present paper, the strain gradient theory is used to model materials undergoing small-scale indentations. A strong effect of including strain gradients in the constitutive description is found with hardness increasing by a factor of two or more over the relevant range behavior. Comparisons with the experimental data for polycrystalline copper and single crystal copper indeed show an approximately linear dependence of the square of the hardness, H 2, on the inverse of the indentation depth, 1/h, I.e., H-2 proportional to 1/h, which provides an important self-consistent check of the strain gradient theory proposed by the authors earlier.

The Size-Dependent Elastic Properties of Nanofilms with Surface Effects

Size-dependent elastic constants are investigated theoretically with reference to a nanoscale single-crystal thin film. A three-dimensional _3D_ model is presented with the relaxation on the surface of the nanofilm taken into consideration. The constitutive relation of the 3D model is derived by using the energy approach, and analytical expressions for the four nonzero elastic constants of the nanofilm are obtained. The size effects of the four elastic constants are then discussed, and the dependence of these elastic constants on the surface relaxation and the ambiguity in the definition of the thickness of the nanofilm are also analyzed. In addition, the elastic moduli of the nanofilm in two kinds of plane problem are obtained and discussed in the case of a special boundary condition.

Micro- and macro-tribological study on a self-assembled dual-layer film

A novel self-assembled dual-layer film as apotential excellent lubricant for micromachines was successfully prepared on single-crystal silicon substrate by chemical adsorption of stearic acid (STA) molecules on self-assembled monolayer of 3-aminopropyltri

微米尺度结构最大抗扭强度的在线测试和研究

提出了一种新型的测试结构，对面积为微米量级下键合的最大抗扭强度进行了测试) 实验设计一系列的单晶硅悬臂梁结构测试键合面积在微米量级时的最大剪切力，键合面为常用的矩形其边长从*!+ 到!#$!+，并根据实际移动距离计算得出的最大剪切力) 并实验实际得出最大剪切扭矩和相应的键合面积的曲线，以及最大扭转剪切破坏应力与悬臂梁加载距离的关系，并针对*$!+, *$!+ 的矩形键合结构进行了加载和位移的重复性实验测量，两次测量结果符合较好) 微电子机械系统（+-./0121.3/0+1.456-.52 78731+，9:9;）器件的设计人员可以根据结论曲线，针对所需的抗扭强度设计相应的键合面积，为9:9; 器件工艺的在线定量测试与设计提供参考)

Investigation of Mn-Implanted n-Type Ge

Mn+ irons were implanted to n-type Ge(1 1 1) single crystal at room temperature with an energy of 100 keV and a dose of 3 x 10(16) cm(-2). Subsequently annealing was performed at 400degreesC for 1 h under flowing nitrogen gas. X-ray diffraction measurements show that as-implanted sample is amorphous and the structure of crystal is restored after annealing. Polycrystalline germanium is formed in annealed sample. There are no new phases found except germanium. The samples surface morphologies indicate that annealed sample has island-like feature while there is no such kind of characteristic in as-implanted sample. The elemental composition of annealed sample was analyzed by Auger electron spectroscopy. It shows that manganese ions are deeply implanted into germanium substrate and the highest manganese atomic concentration is 8% at the depth of 120 nm. The magnetic properties of samples were investigated by an alternating gradient magnetometer. The annealed sample shows ferromagnetic behavior at room temperature.

Investigation of Mn-Implanted n-Si by Low-Energy Ion Beam Deposition

Mn ions were implanted to n-type Si(0 0 1) single crystal by low-energy ion beam deposition technique with an energy of 1000 eV and a dose of 7.5 x 10^{17} cm^{-2}. The samples were held at room temperature and at 300degreesC during implantation. Auger electron spectroscopy depth profiles of samples indicate that the Mn ions reach deeper in the sample implanted at 300degreesC than in the sample implanted at room temperature. X-ray diffraction measurements show that the structure of the sample implanted at room temperature is amorphous while that of the sample implanted at 300degreesC is crystallized. There are no new phases found except silicon both in the two samples. Atomic force microscopy images of samples indicate that the sample implanted at 300degreesC has island-like humps that cover the sample surface while there is no such kind of characteristic in the sample implanted at room temperature. The magnetic properties of samples were investigated by alternating gradient magnetometer (AGM). The sample implanted at 300degreesC shows ferromagnetic behavior at room temperature.

Magnetic Properties of Mn-Implanted n-Type Ge

Mn+ ions were implanted into n-type Ge(111) single crystal at room temperature at an energy of 100 keV with a dose of 3 x 1016 cm-2. Subsequent annealing was performed on the samples at 400 °C and 600 °C in a flowing nitrogen atmosphere. The magnetic properties of the samples have been investigated by alternating gradient magnetometer at room temperature. The compositional properties of the annealed samples were studied by Auger electron spectroscopy and the structural properties were analyzed by X-ray diffraction measurements. Magnetization measurements reveal room-temperature ferromagnetism for the annealed samples. The magnetic analysis supported by compositional and structural properties indicates that forming the diluted magnetic semiconductor (DMS) MnxGe1-x after annealing may account for the ferromagnetic behavior in the annealed samples.

FexSi grown with mass-analyzed low-energy dual ion beam deposition

Heavily iron-implanted silicon was prepared by mass-analyzed low-energy dual ion beam deposition technique. Auger electron spectroscopy depth profiles indicate that iron ions are shallowly implanted into the single-crystal silicon substrate and formed 35 nm thick FexSi films. X-ray diffraction measurements show that as-implanted sample is amorphous and the structure of crystal is partially restored after as-implanted sample was annealed at 400degreesC. There are no new phases formed. Carrier concentration depth profile of annealed sample was measured by Electrochemical C-V method and indicated that FexSi film shows n-type conductivity while silicon substrate is p-type. The p-n junction is formed between FexSi film and silicon substrate showing rectifying effect. (C) 2003 Elsevier B.V. All rights reserved.