284 resultados para PHOTOREFRACTIVE CRYSTALS
Resumo:
Properties of GaAs single crystals grown at low temperatures by molecular beam epitaxy (LTMBE GaAs) have been studied. The results shaw that excessive arsenic atoms of about 10(20) cm(-3) exist in LTMBE GaAs in the form of arsenic interstitial couples, and cause the dilation in lattice parameter of LTMBE GaAs, The arsenic interstitial couples will be decomposed, and the excessive arsenic atoms will precipitate during the annealing above 300 degrees C. Arsenic precipitates accumulate in the junctions of epilayers with the increase in the temperature of annealing. The depletion regions caused by arsenic precipitates overlap each other in LTMBE GaAs, taking on the character of high resistivity, and the effects of backgating or sidegating are effectively restrained.
Resumo:
The propagation characteristics of fiexural waves in periodic grid structures designed with the idea of phononic crystals are investigated by combining the Bloch theorem with the finite element method. This combined analysis yields phase constant surfaces, which predict the location and the extension of band gaps, as well as the directions and the regions of wave propagation at assigned frequencies. The predictions are validated by computation and experimental analysis of the harmonic responses of a finite structure with 11 × 11 unit cells. The fiexural wave is localized at the point of excitation in band gaps, while the directional behaviour occurs at particular frequencies in pass bands. These studies provide guidelines to designing periodic structures for vibration attenuation.
Resumo:
The defects and the lattice perfection of an AlN (0001) single crystal grown by the physical vapor transport (PVT) method were investigated by wet etching, X-ray diffraction (XRD), and infrared absorption, respectively. A regular hexagonal etch pit density (EPD) of about 4000 cm~(-2) is observed on the (0001) A1 surface of an AlN single crystal. The EPD exhibits a line array along the slip direction of the wurtzite structure, indicating a quite large thermal stress born by the crystal in the growth process. The XRD full width at half maximum (FWHM) of the single crystal is 35 arcsec, suggesting a good lattice perfection. Pronounced infrared absorption peaks are observed at wave numbers of 1790, 1850, 2000, and 3000 cm~(-1), respectively. These absorptions might relate to impurities O, C, Si and their complexes in AlN single crystals.
Resumo:
Phosphorus was diffused into CVT grown undoped ZnO bulk single crystals at 550 and 800℃ in a closed quartz tube. The P-diffused ZnO single crystals were characterized by the Hall effect, X-ray photoelectron spectroscopy (XPS), photoluminescence spectroscopy (PL), and Raman scattering. The P-diffused ZnO single crystals are n-type and have higher free electron concentration than undoped ZnO, especially for the sample diffused at 800℃. The PL measurement reveals defect related visible broad emissions in the range of 420-550nm in the P-diffused ZnO samples. The XPS result suggests that most of the P atoms substitute in the Zn site after they diffuse into the ZnO single crystal at 550℃ ,while the P atom seems to occupy the O site in the ZnO samples diffused at 800℃. A high concentration of shallow donor defect forms in the P-diffused ZnO,resulting in an apparent increase of free electron concentration.
Resumo:
To save finite-difference time-domain(FDTD) computing time, several methods are proposed to convert the time domain FDTD output into frequency domain. The Padé approximation with Baker's algorithm and the program are introduced to simulate photonic crystal structures. For a simple pole system with frequency 160THz and quality factor of 5000,the intensity spectrum obtained by the Padé approximation from a 28-item sequence output is more exact than that obtained by fast Fourier transformation from a 220-item sequence output. The mode frequencies and quality factors are calculated at different wave vectors for the photonic crystal slab from a much shorter FDTD output than that required by the FFT method,and then the band diagrams are obatined. In addition,mode frequencies and Q-factors are calculated for photonic crystal microcavity.
Resumo:
The band structure of 2D photonic crystals (PCs) and localized states resulting from defects are analyzed by finite-difference time-domain (FDTD) technique and Pade approximation. The effect of dielectric constant contrast and filling factor on photonic bandgap (PBG) for perfect PCs and localized states in PCs with point defects are investigated. The resonant frequencies and quality factors are calculated for PCs with different defects. The numerical results show that it is possible to modulate the location, width and number of PBGs and frequencies of the localized states only by changing the dielectric constant contrast and filling factor.
Resumo:
国家自然科学基金
Resumo:
We investigate the topological properties of N(N >= 1) disclination lines in cholesteric liquid crystals. The topological structure of N disclination lines is obtained with the Hopf index and Brouwer degree. Furthermore, the knotted x disclination loops is proposed with the Hopf invariant. And we consider the stability of such configuration based on the higher order interaction. At last, the evolution of the disclinations is discussed.
Resumo:
The molar heat capacities of the two biphenyl liquid crystals, 3BmFF and 3BmFFXF3, with a purity of 99.7 mol% have been precisely measured by a fully automated precision adiabatic calorimeter in the temperature range between T = 80 and 350 K. Nematic phase-liquid phase transitions were found between T = 297 K and 300 K with a peak temperature of T-peak = (298.071 +/- 0.089) K for 3BmFF, and between T = 316 and 319 K with a peak temperature of T-peak = (315.543 +/- 0.043) K for 3BmFFXF3. The molar enthalpy (Delta(trs)H(m)) and entropy (Delta(trs)S(m)) corresponding to these phase transitions have been determined by means of the analysis of the heat capacity curves, which are (15.261 +/- 0.023) U mol(-1) and (51.202 +/- 0.076) J K-1 mol(-1) for 3BmFF, (31.624 +/- 0.066) kJ mol(-1) and (100.249 +/- 0.212) J K-1 mol(-1) for 3BmFFXF3, respectively. The real melting points (TI) and the ideal melting points (TO) with no impurities of the two compounds have been obtained from the fractional melting method to be (298.056 +/- 0.018) K and (298.165 +/- 0.038) K for 3BmFF, (315.585 +/- 0.043) K and (315.661 +/- 0.044) K for 3BmFFXF3, respectively. In addition, the transitions of these two biphenyl liquid crystals from nematic phase to liquid phase have further been investigated by differential scanning calorimeter (DSC) technique; the repeatability and reliability for these phase transitions were verified. (C) 2004 Elsevier B.V. All rights reserved.
Resumo:
Two organically templated trivalent metal-containing crystalline zirconium phosphate materials FeZrPO-8 and AlZrPO-8 have been prepared hydrothermally by using fluoride as a mineralizer, and 1,6-diaminohexane (DAH) as templates. The powder XRD patterns indicate that the as-synthesized products are new materials. Substitutions of Al3+ or Fe3+ into Zr4+ sites were confirmed by a combination of powder X-ray diffraction (XRD) and nuclear magnetic resonance (NMR) studies. The thermal behavior of the title compounds have been investigated using TG-DTA and X-ray thermodiffractometry, which indicated that the inorganic framework of the compounds are thermally stable up to similar to400 degreesC. (C) 2004 Elsevier B.V. All rights reserved.