用不同的Mo靶溅射功率制备Mo／Si多层膜

用磁控溅射法制备了周期厚度和周期数均相同的Mo／Si多层膜，用原子力显微镜和小角X射线衍射分别研究了Mo靶溅射功率不相同时，Mo／Si多层膜表面形貌和晶相的变化。随后在国家同步辐射实验室测量了Mo／Si多层膜的软X射线反射率。研究发现，随着Mo靶溅射功率的增大，Mo／Si多层膜的表面粗糙度增加，Mo的特征X射线衍射峰也增强，Mo／Si多层膜的软X射线峰值反射率先增大后减小。

Mo／Si软X射线多层膜的界面粗糙度研究

用磁控溅射法分别制备了以Mo膜层和Si膜层为顶层的Mo／Si多层膜系列，利用小角X射线衍射确定了各多层膜的周期厚度。以不同周期数的Mo／Si多层膜的新鲜表面近似等同于同一多层膜的内界面，通过原子力显微镜研究了多层膜界面粗糙度随膜层数的变化规律。并在国家同步辐射实验室测量了各多层膜的软X射线反射率。研究表明：随着膜层数的增加，Mo膜层和Si膜层的界面粗糙度先减小后增加然后再减小，多层膜的峰值反射率先增加后减小。

退火对HfO2/SiO2多层膜残余应力的影响

用电子束蒸发方法在BK7基底上沉积了HfO2/SiO2多层膜。研究了200℃到400℃的退火对残余应力的影响。结果表明退火前的薄膜残余应力为压应力，在200℃退火后发展为张应力，然后张应力值随着退火温度的升高而增大。在400℃退火后，由于张应力太大，薄膜表面出现了裂纹。同时，随着退火温度的升高，晶粒尺寸长大，晶面间距降低。残余应力的变化与结构的演变相对应。

Thermal-mechanical modeling of nodular defect embedded within multilayer coatings

The initiation of laser damage within optical coatings can be better understood by thermal-mechanical modeling of coating defects. The result of this modeling shows that a high-temperature rise and thermal stress can be seen just inside the nodular defect compared to surrounding coating layers. The temperature rise and thermal stress tend to increase with seed diameter. Shallower seed tend to cause higher temperature rise and greater thermal stress. There is a critical seed depth at which thermal stress is largest. The composition of the seed resulting from different coating-material emission during evaporation can affect the temperature rise and thermal stress distribution.

汉江下游武汉段河漫滩沉积物吸附磷的特征

研究了汉江下游武汉段河漫滩7个沉积物的吸附特征及温度和扰动强度对磷吸附等温线的影响,用改进的Langmuir模型和Freundlish模型对实验吸附数据进行拟合,可得到最大吸附容量(Qmax)、原有吸附可交换态磷(NAP)、临界磷平衡浓度(EPC0)和固-液分配系数(Kp)的值.结果表明,改进的Langmuir模型更适用于描述汉江河漫滩沉积物的吸附特征,其物理意义更明确;Kp与Qmax呈较好的线性关系;沉积物吸附和解吸磷能力与温度变化一致;沉积物在等温吸附磷过程中,固体浓度效应在强扰动强度(200 r/m

菹草对湖泊沉积物磷状态的影响

武昌野芷湖湾菹草(PotamogetoncrispusL.)生物量较高位置的沉积物显示明显较高的磷吸附指数,以及据Langmuir方程:C/X=C/Xm+K×1/Xm导出的最大吸附量与吸附强度,这一结果在不同时期与不同采样深度均有体现,故提高沉积物磷的吸附能力应为菹草维持水体较低营养水平的重要机制。铁结合态磷是沉积物磷的主要存在形式,吸附能力的提高可由有机质及其与铁的相互作用部分地得到解释。不同时期菹草生物量较高的沉积物表现明显较低的碱性磷酸酶活性与最大反应速度,降低沉积物有机磷的酶促分解速率应为菹草维持

网箱养殖对东湖沉积物有机质含量以及磷的酶促水解与吸附行为的影响

东湖养殖罗非鱼(Oreochromisniloticus)的网箱下沉积物中有机质和可酶解磷(PHP)含量以及碱性磷酸酶活性(APA)均显示增高,间隙水中的PHP较低,而APA与正磷酸盐的浓度均高,这种现象在垂直与水平两个尺度上均有体现,故由有机物的富集到正磷酸盐的剧增可能受控于酶学机制。Langmuir单分子等温度吸附模型的分析结果表明网箱下表层沉积物的最大吸附量明显较高,而吸附强度明显降低,此亦为正磷酸盐相应剧增的另一重要原因。不同深度间隙水中APA的动力学行为表现出明显的季节性。

河湖沉积物中酸挥发性硫化物对重金属吸附及释放的影响

通过吸附、释放实验研究了河流及湖泊沉积物酸挥发性硫化物对上覆水中重金属元素的影响 .采用兼具Langmuir及Freundlish等温线方程两种方程特征的Sips表达式及无机离子分级交换理论 ,较好地对重金属元素在沉积物或颗粒物上的吸附及释放特征进行了描述 .结果表明 ,存在于水溶液中的重金属可以不断地与沉积物结合 ,从而使水溶液中的重金属浓度维持在一很低的水平上 ;并且 ,一旦与沉积物结合 ,重金属就很难再释放出来 .酸挥发性硫化物的存在增加了沉积物的吸附容量 ,但酸挥发性硫化物经过酸化被除去后 ,沉积

水体悬移质对重金属吸附规律研究——以长江宜昌段为例

随着长江三峡工程的建设 ,上游来水的流速在此减缓 ,随江水而下的大量泥沙在此沉淀 ,将使坝下 (长江中下游 )水中的悬移质浓度降低、粒径改变 ,从而改变水环境容量。利用长江宜昌江段的周年悬移质样及水样 ,研究了悬移质对重金属 (铜、锌、铅、镉及铬 )的吸附特征。结果表明 ,悬移质对上述金属的吸附可用Freundlich型及Langmuir型等温式较好进行拟合 ;当较高浓度的金属污染物排入江水后 ,在吸附及沉淀的共同作用下 ,浓度明显降低 ;单位悬移质的吸附量随悬移质浓度降低而上升 ,但总吸附量降低 ,从而

Studies on the adsorption equilibrium and kinetics of pentachlorophenol on suspended particulate matter of Donghu Lake water

In this paper, the adsorption equilibrium and kinetic behaviors of pentachlorophenol (PCP) on suspended particulate matter (SPM) in Donghu Lake water were investigated. The Langmuir and Freundlich adsorption models were applied to describe the equilibrium isotherms and their constants were evaluated. The results indicated that the adsorption of PCP on Donghu Lake SPM followed the Freundlich isotherm. Furthermore, the first order Lagergren rate equation and the pseudo-second order rate equation were used to describe the kinetic behaviors of PCP adsorption on Donghu Lake SPM, the rate constants were determined, and the kinetic process of the adsorption of PCP on Donghu Lake SPM followed the second order kinetic model.

Raman scattering of folded acoustic phonons in self-assembled Si/Ge dot superlattices

Self-assembled Si/Ge dot multilayers with small, uncorrelated dots fabricated by molecular beam epitaxy in the Stranski-Krastanov growth mode are studied by Raman scattering of folded longitudinal acoustic (FLA) modes. The FLA Raman spectra are analyzed and modeled with respect to mode frequencies and the spectral envelope of mode intensities. The deduced average superlattice properties are consistent with results from atomic force microscopy. The simple Rytov model used for Si/Ge layer structures reproduces very well the frequencies of the FLA modes up to 150 cm(-1). The nonlinearity of phonon dispersion curves in bulk Si for large momenta, however, becomes important for modeling the higher frequencies of observed FLA modes up to 22nd order. The effective dot layer width and an activation energy for thermal intermixing of 2.1+/-0.2 eV are determined from the spectral envelopes of FLA mode intensities of as-grown and annealed Si/Ge dot multilayers. (C) 2004 American Institute of Physics.

Nano-layer structure of silicon-on-insulator materials

Silicon-on-insulator (SOI) has been recognized as a promising semiconductor starting material for ICs where high speed and low power consumption are desirable, in addition to its unique applications in radiation-hardened circuits. In the present paper, three novel SOI nano-layer structures have been demonstrated. ULTRA-THIN SOI has been fabricated by separation by implantation of oxygen (SIMOX) technique at low oxygen ion energy of 45 keV and implantation dosage of 1.81017/cm2. The formed SOI layer is uniform with thickness of only 60 nm. This layer is of crystalline quality. and the interface between this layer and the buried oxide layer is very sharp, PATTERNED SOI nanostructure is illustrated by source and drain on insulator (DSOI) MOSFETs. The DSOI structure has been formed by selective oxygen ion implantation in SIMOX process. With the patterned SOI technology, the floating-body effect and self-heating effect, which occur in the conventional SOI devices, are significantly suppressed. In order to improve the total-dose irradiation hardness of SOI devices, SILICON ON INSULATING MULTILAYERS (SOIM) nano-structure is proposed. The buried insulating multilayers, which are composed of SiOx and SiNy layers, have been realized by implantation of nitride and oxygen ions into silicon in turn at different ion energies, followed by two steps of high temperature annealing process, respectively, Electric property investigation shows that the hardness to the total-dose irradiation of SOIM is remarkably superior to those of the conventional SIMOX SOI and the Bond-and-Etch-Back SOI.

Magnetic property and interface structure of Ta/NiO/NiFe/Ta

Ta/NiO/NiFe/Ta multilayers, utilizing Ta as buffer layer, were prepared by rf reactive and de magnetron sputtering. The exchange coupling field between NiO and NiFe reached a maximum value of 9.6x10(3) A/m at a NiO film thickness of 50 nm. The composition and chemical states at interface region of Ta/NiO/Ta were studied by using the X-ray photoelectron spectroscopy (XPS) and peak decomposition technique. The results show that there is an "intermixing layer" at the Ta/NiO land NiO/Ta) interface due to a thermodynamically favorable reaction 2Ta + 5NiO = 5Ni + Ta2O5. This interface reaction has a great effect on exchange coupling. The thickness of Ni+NiO estimated by XPS depth. profiles is about 8-10 nm.

X-ray diffraction and optical characterization of interdiffusion in self-assembled InAs/GaAs quantum-dot superlattices

We report on the characterization of thermally induced interdiffusion in InAs/GaAs quantum-dot superlattices with high-resolution x-ray diffraction and photoluminescence techniques. The dynamical theory is employed to simulate the measured x-ray diffraction rocking curves of the InAs/GaAs quantum-dot superlattices annealed at different temperatures. Excellent agreement between the experimental curves and the simulations is achieved when the composition, thickness, and stress variations caused by interdiffusion are taken in account. It is found that the significant In-Ga intermixing occurs even in the as-grown InAs/GaAs quantum dots. The diffusion coefficients at different temperatures are estimated. (C) 2000 American Institute of Physics. [S0003-6951(00)02440-2].

The structural and photoluminescence properties of self-organized quantum dots in InAs/In0.53Ga0.47As multilayer on InP substrate

Self-organized InAs/In0.53Ga0.47As quantum dot (QD) multilayers were grown on InP substrate by molecular beam epitaxy. The structural and optical properties were characterized by using cross-sectional transmission electron microscopy (TEM) and photoluminescence (PL), respectively. Vertically aligned InAs quantum dots multilayer on InP substrate is demonstrated for the first time. Photoluminescence with a line width of similar to 26 meV was observed from the QDs multilayer. (C) 2000 Elsevier Science B.V. All rights reserved.