The growth and characterization of GaN grown on an Al2O3 coated (001)Si substrate by metalorganic vapor phase epitaxy

Single crystal GaN films have been grown on to an Al2O3 coated (001)Si substrate in a horizontal-type low-pressure MOVPE system. A thin Al2O3 layer is an intermediate layer for the growth of single crystal GaN on to Si although it is only an oriented polycrystal him as shown by reflection high electron diffraction. Moreover, the oxide was not yet converted to a fully single crystal film, even at the stage of high temperature for the GaN overlayer as studied by transmission electron microscopy. Double crystal X-ray diffraction showed that the linewidth of (0002) peak of the X-ray rocking curve of the 1.3 mu m sample was 54 arcmin and the films had heavy mosaic structures. A near band edge peaking at 3.4 eV at room temperature was observed by photoluminescence spectroscopy. (C) 1998 Elsevier Science B.V. All rights reserved.

Wurtzite GaN epitaxial growth on a Si(001) substrate using gamma-Al2O3 as an intermediate layer

Wurtzite GaN films have been grown on (001) Si substrates using gamma-Al2O3 as an intermediate layer by low pressure (similar to 76 Torr) metalorganic chemical vapor deposition. Reflection high energy electron diffraction and double crystal x-ray diffraction measurements revealed that the thin gamma-Al2O3 layer of "compliant" character was an effective intermediate layer for the GaN film grown epitaxially on Si. The narrowest linewidth of the x-ray rocking curve for (0002) diffraction of the 1.3 mu m GaN sample was 54 arcmin. The orientation relationship of GaN/gamma-Al2O3/Si was (0001) GaN parallel to(001) gamma-Al2O3 parallel to(001) Si, [11-20] GaN parallel to[110] gamma-Al2O3 parallel to[110] Si. The photoluminescence measurement for GaN at room temperature exhibited a near band-edge peak of 365 nm (3.4 eV). (C) 1998 American Institute of Physics.

High Quality AlGaN Grown on GaN Template with HT-AlN Interlayer

When AlGaN is grown on GaN template, crack networks invariably generate when the thickness of the AlGaN layers over GaN exceeds the critical value. We used thin high temperature deposited AlN layer (HT-AlN) as the interlayer between GaN template and AlGaN epilayer which was very effective in eliminating the cracks in AlGaN epilayer. AlGaN layers with high Al mole fractions were also grown. Characterization showed that the crystalline quality of AlGaN epilayer was fairly good even when the At mole fraction was high.

AlGaN/AlN/GaN/InGaN/GaN DH-HEMTs with improved mobility grown by MOCVD

AlGaN/AlN/GaN/InGaN/GaN double heterojunction high electron mobility transistors (DH-HEMTs) structures with improved buffer isolation have been investigated. The structures were grown by MOCVD on sapphire substrate. AFM result of this structure shows a good surface morphology with the root-mean-square roughness (RMS) of 0.196 nm for a scan area of 5 mu mx5 mu m. A mobility as high as 1950 cm(2)/Vs with the sheet carrier density of 9.89x10(12) cm(-2) was obtained, which was about 50% higher than other results of similar structures which have been reported. Average sheet resistance of 327 Omega/sq was achieved. The HEMTs device using the materials was fabricated, and a maximum drain current density of 718.5 mA/mm, an extrinsic transconductance of 248 mS/mm, a current gain cutoff frequency of 16 GHz and a maximum frequency of oscillation 35 GHz were achieved.

Molecular beam epitaxy of GaSb on GaAs substrates with AlSb/GaSb compound buffer layers

GaSb films with AlSb/GaSb compound buffer layers were grown by molecular beam epitaxy on GaAs (001) substrates. The crystal quality and optical properties were studied by high resolution transition electron microscopy and low temperature photoluminescence spectra (PL), respectively. It was found that the AlSb/GaSb compound buffer layers can restrict the dislocations into GaSb epilayers. The intensity of PL spectra of GaSb layer becomes large with the increasing the periods of AlSb/GaSb superlattices, indicating that the optical quality of GaSb films is improved.

Cesium hydroxide doped tris-(8-hydroxyquinoline) aluminum as an effective electron injection layer in inverted bottom-emission organic light emitting diodes

We demonstrate highly efficient inverted bottom-emission organic light-emitting diodes (IBOLEDs) by using cesium hydroxide (CsOH) doped tris-(8-hydroxyquinoline) aluminum (Alq(3)) as the electron injection layer on indium tin oxide cathode, which could significantly enhance the electron injection, resulting in a large increase in luminance and efficiency. The maximum luminance, current efficiency, and power efficiency reach 21 000 cd/cm(2), 6.5 cd/A, and 3.5 lm/W, respectively, which are 40%-50% higher in efficiency than that of IBOLEDs with cesium carbonate (Cs2CO3) doped Alq(3) as the electron injection layer, where the efficiencies are only 4.5 cd/A and 2.2 lm/W.

Immunosensors based on layer-by-layer self-assembled Au colloidal electrode for the electrochemical detection of antigen

Colloidal Au particles have been deposited on the gold electrode through layer-by-layer self-assembly using cysteamine as cross-linkers. Self-assembly of colloidal Au on the gold electrode resulted in ail easier attachment of antibody, larger electrode surface and ideal electrode behavior. The redox reactions of [Fe(CN)(6)]-/[Fe(CN)(6)](3-) on the gold surface were blocked due to antibody immobilization, which were investigated by cyclic voltammetry and impedance spectroscopy. The interaction of antigen with grafted antibody recognition layers was carried out by soaking the modified electrode into a phosphate buffer at pH 7.0 with various concentrations of antigen at 37degreesC for 30 min. Further, an amplification strategy to use biotin conjugated antibody was introduced for improving the sensitivity of impedance measurements. Thus, the sensor based oil this immobilization method exhibits a large linear dynamic range, from 5 - 400 mug/L for detection of Human IgG. The detection limit is about 0.5 mug/L.

Fabrication of a metalloporphyrin - Polyoxometalate hybrid film by a layer-by-layer method and its catalysis for hydrogen evolution and dioxygen reduction

Tetrakis (N-methylpyridyl) porphyrinato] cobalt (CoTMPyP) and 1:12 silicotungstic acid (SiW12) were alternately deposited on a 4-aminobenzoic acid (4-ABA)-modified glassy carbon electrode through a layer-by-layer method. The resulting organic-inorganic hybrid films were characterized by cyclic voltammetry (CV) and UV/vis absorption spectroscopy. We proved that the prepared multilayer films are uniform and stable. SiW12-containing multilayer films (SiW12 as the outermost layer) exhibit remarkable electrocatalytic activity for the hydrogen evolution reaction (HER). The kinetic constants for HER were comparatively investigated at different layers Of SiW12/CoTMPyP multilayer film-modified electrodes by hydrogen evolution voltammetry. In addition, rotating disk electrode (RDE) and rotating ring-disk electrode (RRDE) voltammetric methods confirm that SiW12/CoTMPyP (CoTMPyP as the outermost layer) multilayer films catalyze almost a two-electron reduction of O-2 to H2O2 in pH 1-6 buffer solutions. Furthermore, P2W18/CoTMPyP films were also assembled, and their catalytic activity for HER is very different from that Of SiW12/CoTMPyP multilayer films.

Fabrication of metalloporphyrin-polyoxometalyte hybrid film by layer-by-layer method and its catalysis for dioxygen reduction

Through layer-by-layer method [tetrakis(N-methylpyridyl)porphyrinato] cobalt (CoTMPyP) and polyoxometalyte were alternately deposited on 4-aminobenzoic acid (4-ABA) modified glassy carbon electrode. The resulting organic-inorganic hybrid films were characterized by cyclic voltammetry (CV), UV/visible absorption spectroscopy, and atomic force microscopy (AFM). It was proved that the multilayer films are uniform and stable. CoTMPyP-containing multilayer films exhibit remarkable electrocatalytic activity for the reduction of O-2. Rotating disk electrode (RDE) voltammetry and rotating ring-disk electrode (RRDE) voltammetry confirm that P2W18/CoTMPyP multilayer films can catalyze the four-electron almost reduction of O-2 to water in pH > 4.0 buffer solution, while SiW12/CoTMPyP multilayer films catalyze about two-electron reduction of O-2 to H2O2 in pH 1 - 6 buffer solutions. The kinetic constants for O-2 reduction were comparatively investigated at P2W18/CoTMPyP and SiW12/CoTMPyP multilayer films electrodes.

Conformational transition of DNA in electroreduction studied by in situ UV and CD thin layer spectroelectrochemistry

Electrochemically induced three conformational transitions of calf thymus DNA from B-10.4 to Z(10.2)-DNA and from B-10.2 to B-10.4 and to C-DNA in 10 mM phosphate buffer solution (pH 7.21) at glassy carbon electrode are found and studied by in situ circular dichroism (CD) thin layer spectroelectrochemistry with singular value decomposition least square (SVDLS) analysis. It indicates that the so-called B-10.2 form and the C-form of DNA may be composed of B-10.4 and left-A DNA and of B-10.4 and right-A DNA, respectively. The irreversible electrochemical reduction of adenine and cytosine groups in the DNA molecule is studied by UV-Vis spectroelectrochemistry. Some electrochemical parameters alphan = 0.17, E-0' = -0.70 V (vs. Ag/AgCl), and the standard heterogeneous electron transfer rate constant, k(0) = 1.8 x 10(-5) cm s(-1) are obtained by double logarithmic analysis and non-linear regression. (C) 2000 Elsevier Science B.V. All rights reserved.

FEM Simulations and Optimization about Residual Stresses in Coating Structures with Functionally Graded Materials Layer

An elasto-plastic finite element method is developed to predict the residual stresses of thermal spraying coatings with functionally graded material layer. In numerical simulations, temperature sensitivity of various material constants is included and mix

Direct Numerical Simulation of a Spatially Evolving Supersonic Turbulent Boundary Layer at Ma=6

Direct numerical simulation is carried out for a spatially evolving supersonic turbulent boundary layer at free-stream Mach number 6. To overcome numerical instability, the seventh-order WENO scheme is used for the convection terms of Navier-Stokes equations, and fine mesh is adopted to minimize numerical dissipation. Compressibilty effects on the near-wall turbulent kinetic energy budget are studied. The cross-stream extended self-similarity and scaling exponents including the near-wall region are studied. In high Mach number flows, the coherence vortex structures are arranged to be smoother and streamwised, and the hair-pin vortices are less likely to occur.

Thermocapillary flow in an annular liquid layer painted on a moving fiber

In the present paper, a theoretical model is studied on the flow in the liquid annular film, which is ejected from a vessel with relatively higher temperature and painted on the moving solid fiber. A temperature gradient, driving a thermocapillary flow, is formed on the free surface because of the heat transfer from the liquid with relatively higher temperature to the environmental gas with relatively lower temperature. The thermocapillary flow may change the radii profile of the liquid film. This process analyzed is based on the approximations of lubrication theory and perturbation theory, and the equation of the liquid layer radii and the process of thermal hydrodynamics in the liquid layer are solved for a temperature distribution on the solid fiber.

Microstructure and Evolution of Mechanically-Induced Ultrafine Grain in Surface Layer of Al-Alloy Subjected to USSP

Experiments were conducted to investigate the ultrafine-grained (UFG) microstructures in the surface layer of an aluminum alloy 7075 heavily worked by ultrasonic shot peening. Conventional and high-resolution electron microscopy was performed at various depths of the deformed layer. Results showed that UFG structures were introdued into the surface layer of 62 μm thick. With increasing strain, the various microstructural features, e.g., the dislocation emission source, elongated microbands, dislocation cells, dislocation cell blocks, equiaxed submicro-, and nano-crystal grains etc., were successively produced. The grain subdivision into the subgrains was found to be the main mechanism responsible for grain refinement. The simultaneous evolution of high boundary misorientations was ascribed to the subgrain boundary rotation for accommodating further strains. Formed microstructures were highly nonequilibratory.  2002 Acta Materialia Inc. Published by Elsevier Science Ltd. All rights reserved.

Direct numerical simulation of transition and turbulence in compressible mixing layer

The three-dimensional compressible Navier-Stokes equations are approximated by a fifth order upwind compact and a sixth order symmetrical compact difference relations combined with three-stage Ronge-Kutta method. The computed results are presented for convective Mach number Mc = 0.8 and Re = 200 with initial data which have equal and opposite oblique waves. From the computed results we can see the variation of coherent structures with time integration and full process of instability, formation of Lambda-vortices, double horseshoe vortices and mushroom structures. The large structures break into small and smaller vortex structures. Finally, the movement of small structure becomes dominant, and flow field turns into turbulence. It is noted that production of small vortex structures is combined with turning of symmetrical structures to unsymmetrical ones. It is shown in the present computation that the flow field turns into turbulence directly from initial instability and there is not vortex pairing in process of transition. It means that for large convective Mach number the transition mechanism for compressible mixing layer differs from that in incompressible mixing layer.