Gastropods on submersed macrophytes in Yangtze lakes: Community characteristics and empirical modelling

Epiphytic gastropods in Yangtze lakes have suffered from large-scale declines of submersed macrophytes during past decades. To better understand what controls gastropod community, monthly investigations were carried out in four Yangtze lakes during December, 2001-March, 2003. Composed of 23 species belonging to Pulmonata and Prosobranchia, the community is characterized by the constitution of small individuals. The average density and biomass were 417 +/- 160 ind/m(2) and 18.05 +/- 7.43 g/m(2), with maxima a-round August. Submersed macrophyte biomass is shown to be the key factor affecting species number, density, and biomass of gastropods. Accordingly, a series of annual and seasonal models yielding high predictive powers were generated. Preference analyses demonstrated that pulmonates and prosobranchs with different respiratory organs prefer different macrophyte functional groups.

Sedimentary records of water environment in lake Chaohu in the Yangtze delta region, China

Three lacustrine core samples were collected from Chaohu lake in December 2002 in the Yangtze delta region. The grain sizes were analyzed using a Laser Analyzer to obtain grain-size parameters. Sediment geochronology was determined in radioisotopes Cs-137 and the average sedimentary rates are 0.29cm.a(-1), 0.35 cm.a(-1) and 0.24cm-a(-1) in Cores C 1, C2 and C3, respectively. The grain-size parameters of the deposits vary regularly with the fluctuation of hydrodynamics. From 1950s to the beginning of 20th century, coarse-grained sediment was deposited, suggesting strong hydraulic conditions and high water-level periods with much precipitation; from the start of 20(th) century to latter half of 18(th) century, fine-grained sediment was deposited, indicating that weak hydraulic conditions and low water-level periods with less precipitation; before the first half of 18(th) century, coarse-grained sediment was deposited, suggesting great velocity of flow and high water-level periods of more precipitation.

Effects of nitrogen forms on the production of cyanobacterial toxin microcystin-LR by an isolated Microcystis aeruginosa

A cyanobacterial strain, which produced high content of microcystin-LR (MC-LR) but no rnicrocystin-RR (MC-RR), was isolated from the hypertrophic Dianchi Lake in China and identified as Microcystis aeruginosa DC-1. Effects of nitrogen containing chemicals and trace elements on the growth and the production of MC-LR by this strain were Studied. In the presence of bicine, compared with urea and ammonium, nitrate greatly promoted the growth and the production of MC-LR. However, leucine and arginine, which were the constitutional components in the molecular structure of MC-LR or RR, inhibited the production of MC-LR. Iron and silicon up to 10mg/L had little effects on the growth of M. aeruginosa DC-1, but the production of MC-LR was apparently enhanced. Under all conditions studied here, only MC-LR but no RR was detected within the cells of M. aeruginosa DC-1. Thus, chemical forms of nitrogen, rather than the usually concerned the total nitrogen, Lind trace elements played important roles in the production of MC toxins during cyanobacterial blooms.

Detection of hepatotoxic Microcystis strains by PCR with intact cells from both culture and environmental samples

Microcystins are small hepatotoxic peptides produced by a number of cyanobacteria. They are synthesized non-ribosomally by multifunctional enzyme complex synthetases encoded by the mcy genes. Primers deduced from mcy genes were designed to discriminate between toxic microcystin-producing strains and non-toxic strains. Thus, PCR-mediated detection of mcy genes could be a simple and efficient means to identify potentially harmful genotypes among cyanobacterial populations in bodies of water. We surveyed the distribution of the mcyB gene in different Microcystis strains isolated from Chinese bodies of water and confirmed that PCR can be reliably used to identify toxic strains. By omitting any DNA purification steps, the modified PCR protocol can greatly simplify the process. Cyanobacterial cells enriched from cultures, field samples, or even sediment samples could be used in the PCR assay. This method proved sensitive enough to detect mcyB genes in samples with less than 2,000 Microcystis cells per ml. Its accuracy, specificity and applicability were confirmed by sequencing selected DNA amplicons, as well as by HPLC, ELISA and mouse bioassay as controls for toxin production of every strain used.

Photoluminescence and lasing properties of InAs/GaAs quantum dots grown by metal-organic chemical vapour deposition

Photoluminescence (PL) and lasing properties of InAs/GaAs quantum dots (QDs) with direrent growth procedures prepared by metalorganic chemical vapour deposition are studied. PL measurements show that the low growth rate QD sample has a larger PL intensity and a narrower PL line width than the high growth rate sample. During rapid thermal annealing, however, the lowgrowth rate sample shows a greater blue shift of PL peak wave length. This is caused by the larger InAs layer thickness which results from the larger 2-3 dimensional transition critical layer thickness for the QDs in the low-growth-rate sample. A growth technique including growth interruption and in-situ annealing, named indium flush method, is used during the growth of GaAs cap layer, which can flatten the GaAs surface effectively. Though the method results in a blue shift of PL peak wavelength and a broadening of PL line width, it is essential for the fabrication of room temperature working QD lasers.

Directional emission InP/GaInAsP square-resonator microlasers

InP/GaInAsP square-resonator microlasers with an output waveguide connected to the midpoint of one side of the square are fabricated by standard photolithography and inductively-coupled-plasma etching technique. For a 20-mu m-side square microlaser with a 2-mu m-wide output waveguide, cw threshold current is 11 mA at room temperature, and the highest mode Q factor is 1.0 X 10(4) measured from the mode linewidth at the injection current of 10 mA. Multimode oscillation is observed with the lasing mode wavelength 1546 nm and the side-mode suppression ratio of 20 dB at the injection current of 15 mA. (C) 2008 Optical Society of America

Monolithic integration of sampled grating DBR with electroabsorption modulator by combining selective-area-growth MOCVD and quantum-well intermixing

We present the monolithic integration of a sampled-grating distributed Bragg reflector (SC-DBR) laser with a quantum-well electroabsorption modulator (QW-EAM) by combining ultra-low-pressure (55 mbar) selective-area-growth (SAG) metal-organic chemical vapour deposition (MOCVD) and quantum-well intermixing (QWI) for the first time. The QW-EAM and the gain section can be grown simultaneously by using SAG MOCVD technology. Meanwhile, the QWI technology offers an abrupt band-gap change between two functional sections, which reduces internal absorption loss. The experimental results show that the threshold current I-th = 62 mA, and output power reaches 3.6 mW. The wavelength tuning range covers 30 nm, and all the corresponding side mode suppression ratios are over 30 dB. The extinction ratios at available wavelength channels can reach more than 14 dB with bias of -5 V.

A novel butt-joint scheme for the preparation of electro-absorptive lasers

A 1.55 mu m InGaAsP/InGaAsP multiple-quantum-well electro-absorption modulator (EAM) monolithically integrated with a distributed feedback laser (DFB) diode has been realized based on a novel butt-joint scheme by ultra-low metal-organic vapour phase epitaxy for the first time. The threshold current of 25 mA and an extinction ratio of more than 30 dB are obtained by using the novel structure. The beam divergence angles at the horizontal and vertical directions are as small as 19.3 degrees x 13 degrees, respectively, without a spot-size converter by undercutting the InGaAsP active region. The capacitance of the ridge waveguide device with a deep mesa buried by polyimide was reduced down to 0.30 pF.

Monolithically integrated transceiver with novel Y-branch by bundle integrated waveguide for fibre optic gyroscope

A novel Y-branch based monolithic transceiver with a superluminescent diode and a waveguide photodiode (Y-SDL-PD) is designed and fabricated by the method of bundle integrated waveguide (BIG) as the scheme for monolithic integration and angled Y-branch as the passive bi-directional waveguide. The simulations of BIG and Y-branches show low losses and improved far-field patterns, based on the beam propagation method (BPM). The amplified spontaneous emission of the device is up to 10mW at 120mA with no threshold and saturation. Spectral characteristics of about 30 nm width and less than 1 dB modulation are achieved using the built-in anti-lasing ability of Y-branch. The beam divergence angles in horizontal and vertical directions are optimized to as small as 12 degrees x 8 degrees, resulting in good fibre coupling.

A new phototransistor with uni-travelling-carrier and optically gradual coupling properties

Based on appropriate combination of different band-gap InGaAsP, a new edge-coupled two-terminal double heterojunction phototransistor (ECTT-DHPT) was designed and fabricated, which is double heterojunction, free-aluminium, and works under uni-travelling-carrier mode and optically gradual coupling mode. This device is fully compatible with monolithic micro-wave integrated circuits (MMIC) and heterojunction bipolar transistor (HBT) in material and process. The DC characteristics reveal that the new ECTT-DHPT can perform good optoelectronic mix operation and linear amplification operation by optically biased at two appropriate value respectively. Responsivity of more than 52 A/W and dark current of 70 nA (when V-EC = 1 V) were obtained.

Photoluminescence from heterogeneous SiGe/Si nanostructures prepared via a two-step approach strategy

A two-step approach of preparation for SiGe/Si heterogeneous nanostructures, which combined with ultra-high vacuum chemical deposition and electrochemical anodization techniques, is demonstrated. Uniformly distributed nanostructures with a quite uniform distribution of size and morphology are obtained. A strong room-temperature photoluminescence from the nanostructures was observed with a narrow full-width at half-maximum of around 110 meV. The possible origins of the two main peaks at around 1.6 and 1.8 eV have been discussed in detail. The two-step approach is proved to be a promising method to fabricate new Si-based optoelectronic materials. (C) 2009 Elsevier B.V. All rights reserved.

High efficiency passively Q-switched mode-locking Nd:GdVO4 laser with LT-In0.25Ga0.75As saturable absorber

The generation of passively Q-switched mode-locking operation with 100% modulation depth has been observed from a diode-pumped Nd GdVO4 laser with a low temperature In0.25Ga0.75As saturable absorber, which was grown by the metal-organic chemical-vapor deposition technique and acted as saturable absorber as well as output coupler. The repetition rate and pulse duration of the mode-locked pulses concentrated in the Q-switch envelop were 455 MHz and 12 ps, respectively. The average output power was 1.8 W and the slope efficiency was 36%. (C) 2009 Elsevier B.V. All rights reserved.

Electrically Pumped Room-Temperature Pulsed InGaAsP-Si Hybrid Lasers Based on Metal Bonding

A pulsed InGaAsP-Si hybrid laser is fabricated using metal bonding. A novel structure in which the optical coupling and metal bonding areas are transversely separated is employed to integrate the silicon waveguide with an InGaAsP multi-quantum well distributed feedback structure. When electrically pumped at room temperature, the laser operates with a threshold current density of 2.9 kA/cm(2) and a slope efficiency of 0.02 W/A. The 1542 nm laser output exits mainly from the Si waveguide.

Integratable and High Speed Complex-Coupled MQW-DFB Lasers Fabricated on Semi-Insulating Substrates

A novel integratable and high speed InGaAsP multi-quantum well (MQW) complex-coupled distributed feedback (DFB) laser is successfully fabricated on a semi-insulating substrate. The fabricated ridge DFB laser exhibits a threshold current of 26 mA, a slope efficiency of 0.14 W.A(-1) and a side mode suppression ratio of 40 dB together with a 3 dB bandwidth of more than 8 GHz. The device is suitable for 10 Gbit/s optical fiber communication.

40-Gb/s Low Chirp Electroabsorption Modulator Integrated With DFB Laser

A 40-Gb/s monolithically integrated transmitter containing an InGaAsP multiple-quantum-well electroabsorption modulator (EAM) with lumped electrode and a distributed-feedback semiconductor laser is demonstrated. Superior characteristics are exhibited for the device, such as low threshold current of 20 mA, over 40-dB sidemode suppression ratio at 1550 nm, and more than 30-dB dc extinction ratio when coupled into a single-mode fiber. By adopting a deep ridge waveguide and planar electrode structures combined with buried benzocyclobutene, the capacitance of the EAM is reduced to 0.18 pF and the small-signal modulation bandwidth exceeds 33 GHz. Negative chirp operation is also realized when the bias voltage is beyond 1.6 V.