244 resultados para Low temperature research
Resumo:
Jacket platform is the most widely used offshore platform. Steel rubber vibration isolator and damping isolation system are often used to reduce or isolate the ice-induced and seismic-induced vibrations. The previous experimental and theoretical studies concern mostly with dynamic properties, vibration isolation schemes and vibration-reduction effectiveness analysis. In this paper, the experiments on steel rubber vibration isolator were carried out to investigate the compressive properties and fatigue properties in different low temperature conditions. The results may provide some guidelines for design of steel rubber vibration isolator for offshore platform in a cold environment, and for maintenance and replacement of steel rubber vibration isolator, and also for fatigue life assessment of the steel rubber vibration isolator. (C) 2009 Elsevier Ltd. All rights reserved.
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The temperature dependence of hole spin relaxation time in both neutral and n-doped ultrathin InAs monolayers has been investigated. It has been suggested that D'yakonov-Perel (DP) mechanism dominates the spin relaxation process at both low and high temperature regimes. The appearance of a peak in temperature dependent spin relaxation time reveals the important contribution of Coulomb scatterings between carriers to the spin kinetics at low temperature, though electron-phonon scattering becomes dominant at higher temperatures. Increased electron screening effect in the n-doped sample has been suggested to account for the shortened spin relaxation time compared with the undoped one. The results suggest that hole spins are also promising for building solid-state qubits.
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We report on optimizing the GaAs capping layer growth of 1.3 mu m InAs quantum dots (QDs) by a combined two-temperature and annealing process at low temperatures using metalorganic chemical vapor deposition. The initial part (tnm) of the capping layer is deposited at a low temperature of 500 degrees C, which is the same for the growth of both the QDs and a 5-nm-thick In0.15Ga0.85As strain-reducing capping layer on the QDs, while the remaining part is grown at a higher temperature of 560 degrees C after a rapid temperature rise and subsequent annealing period at this temperature. The capping layer is deposited at the low temperatures (<= 560 degrees C) to avoid postgrowth annealing effect that can blueshift the emission wavelength of the QDs. We demonstrate the existence of an optimum t (=5 nm) and a critical annealing time (>= 450s) during the capping, resulting in significantly enhanced photoluminescence from the QDs. This significant enhancement in photoluminescence is attributed to a dramatic reduction of defects due to the optimized capping growth. The technique reported here has important implications for realizing stacked 1.3 mu m InAs/GaAs QD lasers. (C) 2008 Elsevier B.V. All rights reserved.
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Coral bleaching, which is defined as the loss of colour in corals due to the loss of their symbiotic algae (commonly called zooxanthellae) or pigments or both, is occurring globally at increasing rates, and its harm becomes more and more serious during these two decades. The significance of these bleaching events to the health of coral reef ecosystems is extreme, as bleached corals exhibited high mortality, reduced fecundity and productivity and increased susceptibility to diseases. This decreased coral fitness is easily to lead to reef degradation and ultimately to the breakdown of the coral reef ecosystems. Recently, the reasons leading to coral bleaching are thought to be as follows: too high or too low temperature, excess ultraviolet exposure, heavy metal pollution, cyanide poison and seasonal cycle. To date there has been little knowledge of whether mariculture can result in coral bleaching and which substance has the worst effect on corals. And no research was conducted on the effect of hypoxia on corals. To address these questions, effects of temperature, hypoxia, ammonia and nitrate on bleaching of three coral species were studied through examination of morphology and the measurement of the number of symbiotic algae of three coral species Acropora nobilis, Palythoa sp. and Alveopora verrilliana. Results showed that increase in temperature and decrease in dissolved oxygen could lead to increasing number of symbiotic algae and more serious bleaching. In addition, the concentration of 0.001 mmol/L ammonia or nitrate could increase significantly the expulsion of the symbiotic algae of the three coral species. Except for Acropora nobilis, the numbers of symbiotic algae of other two corals did not significantly increase with the increasing concentration of ammonia and nitrate. Furthermore, different hosts have different stress susceptibilities on coral bleaching.
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The effects of temperature and food availability on the life history strategy of the planktonic copepod Calanus sinicus in the southern Yellow Sea in summer were studied in this paper. The fifth copepodite stage (CV) dominates the population in the central part of the southern Yellow Sea, where the Yellow Sea Cold Water Mass (YSCWM) occurs below the thermocline. Incubation experiments were conducted on CV C. sinicus caught from the YSCWM to examine the effects of temperature and food availability. Temperature at the surface (27degreesC) is lethal to CVs regardless of food availability. At the temperature in the middle of the thermocline (18degreesC), survival time of the specimens depends on food availability, being similar to20 days in treatments without extra food supply. At the temperature in the YSCWM (9degreesC), most animals survive at the end of 27 day incubation even in treatments without food supply. Developmental rate of CVs at 9degreesC without extra food supply is extremely low. The increase of either temperature or food supply promotes the developmental rate of CVs. According to these results, the surface layers with high temperature and low food abundance are detrimental for the survival and reproduction of C. sinicus. Low temperature and low food availability in the YSCWM help CV to maintain a much lower developmental rate and higher survival rate. The ecological trait of C. sinicus in the southern Yellow Sea in summer cannot be sufficiently explained solely by the effects of temperature.
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A transmission electron microscopy (TEM) study has been carried out to uncover how dislocations and twins accommodate large plastic strains and accumulate in very small nanocrystalline Ni grains during low-temperature deformation. We illustrate dislocation patterns that suggest preferential deformation and nonuniform defect storage inside the nanocrystalline grain. Dislocations are present in individual and dipole configurations. Most dislocations are of the 60 degrees type and pile up on (111) slip planes. Various deformation responses, in the forms of dislocations and twinning, may simultaneously occur inside a nanocrystalline grain. Evidence for twin boundary migration has been obtained. The rearrangement and organization of dislocations, sometimes interacting with the twins, lead to the formation of subgrain boundaries, subdividing the nanograin into mosaic domain structures. The observation of strain (deformation)-induced refinement contrasts with the recently reported stress-assisted grain growth in nanocrystalline metals and has implications for understanding the stability and deformation behavior of these highly nonequilibrium materials.
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Nonpolar a-plane (1120) ZnO thin films have been fabricated on gamma-LiAlO2 (302) substrates via the low-pressure metal-organic chemical vapor deposition. An obvious intensity variation of the E-2 mode in the Raman spectra indicates that there exhibits in-plane optical anisotropy in the a-plane ZnO thin films. Highly-oriented uniform grains of rectangular shape can be seen from the atomic force microscopy images, which mean that the lateral growth rate of the thin films is also anisotropic. It is demonstrated experimentally that a buffer layer deposited at a low temperature (200 degrees C) can improve the structural and optical properties of the epilayer to a large extent. (c) 2007 Elsevier B.V. All rights reserved.
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We studied seasonal variation in the activity budget of a habituated group of Nomascus concolor jingdongensis at Mt. Wuliang, Central Yunnan, China from March 2005 to April 2006 via scan sampling at 5-min intervals. The study site is near the northern extreme of the distribution of hylobatids, at high altitude with extreme seasonality of temperature and rainfall. During the day, feeding manifested a bimodal pattern of high activity levels in mid-morning and mid-afternoon, whereas resting reached a peak at midday, with proportionally less time used for traveling. Annually, the group spent an average of 40.0% of the time resting, 35.1% feeding, 19.9% traveling, 2.6% singing, 1.2% playing, and 1.3% in other activities. The proportion of time allocated to activities showed significant monthly variations and was influenced by the diet and temperature. Gibbons increased traveling and playing time and decreased feeding time when they ate more fruit, and they decreased traveling, singing, and playing time and increased feeding time when they ate more leaves. Moreover, when the temperature was low, the gibbons decreased time traveling and increased time resting. In summary, black-crested gibbons employed high-effort activities when they ate more fruit and energy-conservation patterns when they ate more leaves and in low temperature. Behavioral data from the site are particularly useful in understanding gibbon behavioral adaptations to different sets of ecological conditions.
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The effects of temperature and light on the growth and geosmin production of Lyngbya kuetzingii were determined. Of the three temperatures tested, 10, 25 and 35A degrees C, the maximal geosmin concentration and geosmin productivity were yielded at 10A degrees C, while the highest chl a production was observed at 25A degrees C. In the studies on light intensity, the maximal geosmin concentration and geosmin productivity were observed at 10 mu mol m(-2) s(-1), while the highest chl a production was at 20 mu mol m(-2) s(-1). It was suggested that more geosmin was synthesized with lower chl a demand. Meanwhile, the relative amounts of extra- and intracellular geosmin were investigated. Under optimum growth conditions (20 mu mol m(-2) s(-1), 25A degrees C; BG-11 medium), the amounts of extracellular geosmin increased as the growth progressed and reached the maximum in the stationary phase, while the intracellular geosmin reached its maximum value in the late exponential phase, and then began to decline. However, under the low temperature (10A degrees C) or light (10 mu mol m(-2) s(-1)) conditions, more intracellular geosmin was synthesized and mainly accumulated in the cells. The proportions of extracellular geosmin were high, to 33.33 and 32.27%, respectively, during the stationary phase at 35A degrees C and 20 mu mol m(-2) s(-1). It was indicated that low temperature or light could stimulate geosmin production and favor the accumulation of geosmin in cells, while more intracellular geosmin may be released into the medium at higher temperatures or optimum light intensity.
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ZnMgO hexagonal-nanotowers/films grown on m-plane sapphire substrates were successfully synthesized using a vertical low-pressure metal organic chemical vapour deposition system. The structural and optical properties of the as-obtained products were characterized using various techniques. They were grown along the non-polar [1 0 (1) over bar 0] direction and possessed wurtzite structure. The ZnMgO hexagonal-nanotowers were about 200 nm in diameter at the bottom and 120 nm in length. Photoluminescence and Raman spectra show that the products have good crystal quality with few oxygen vacancies. With Mg incorporation, multiple-phonon scattering becomes weak and broad, and the intensities of all observed vibrational modes decrease. The ultraviolet near band edge emission shows a clear blueshift (as much as 100 meV) and broadening compared with that of pure ZnO products.
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AlGaN/GaN high electron mobility transistor (HEMT) hetero-structures were grown on the 2-in Si (1 1 1) substrate using metal-organic chemical vapor deposition (MOCVD). Low-temperature (LT) AlN layers were inserted to relieve the tension stress during the growth of GaN epilayers. The grown AlGaN/GaN HEMT samples exhibited a maximum crack-free area of 8 mm x 5 mm, XRD GaN (0 0 0 2) full-width at half-maximum (FWHM) of 661 arcsec and surface roughness of 0.377 nm. The device with a gate length of 1.4 mu m and a gate width of 60 mu m demonstrated maximum drain current density of 304 mA/mm, transconductance of 124 mS/mm and reverse gate leakage current of 0.76 mu A/mm at the gate voltage of -10 V. (C) 2008 Published by Elsevier Ltd.
Resumo:
Thermally stimulated luminescence spectroscopy has been applied to study the deep centres in unintentionally doped high resistivity GaN epilayers grown by the metal organic chemical vapour deposition method on c-sapphire substrates. Two trap states with activation energies of 0.12 and 0.62 eV are evaluated from two luminescence peaks at 141.9 and 294.7 K in the luminescence curve. Our spectroscopy measurement, in combination with more accurate first-principles studies, provided insights into the microscopic origin of these levels. Our investigations suggest that the lower level at 0.12 eV might originate from C-N, which behaves as a hole trap state; the deeper level at 0.62 eV can be correlated with V-Ga that corresponds to the yellow luminescence band observed in low-temperature photoluminescence spectra.
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Fe films with the different thicknesses were grown on c(4x4) reconstructed GaAs (001) surfaces at low temperature by molecular-beam epitaxy. Well-ordered bcc structural Fe epitaxial films are confirmed by x-ray diffraction patterns and high-resolution cross-sectional transmission electron microscopy images. A large lattice expansion perpendicular to the surface in Fe film is observed. In-plane uniaxial magnetic anisotropy is determined by the difference between magnetizing energy along [110] and [110] directions, and the constant of interfacial uniaxial magnetic anisotropy is calculated to be 1.02x10(-4) J m(-2). We also find that magnetic anisotropy is not obviously influenced after in situ annealing, but in-plane strain is completely changed.
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The characteristics of equilateral-triangle resonator (ETR) and square resonator microlasers are reported, which are potential light sources in the photonic integrations. Based on the numerical simulations, we find that high-efficiency directional emission can be achieved for the triangle and square microlasers by directly connecting an output waveguide to the resonators. The electrically injected InP/InGaAsP ETR and square resonator microlasers with a 2-mu m-wide output waveguide were fabricated by standard photolithography and inductively coupled plasma etching techniques. Room-temperature continuous-wave (CW) operations were achieved for the ETR microlasers with the side length from 10 to 30 mu m and the square resonator microlasers with the side length of 20 mu m. The output power versus CW injection current and the laser spectra are presented for an ETR microlaser up to 310 K and a square resonator microlaser to 305 K. The lasing spectra with mode wavelength intervals as that of whispering-gallery-type modes and Fabry-Perot modes are observed for two square lasers, which can lase at low temperature and room temperature, respectively.