The influence of V/III ratio in the initial growth stage on the properties of GaN epilayer deposited on low temperature AlN buffer layer

The V/III ratio in the initial growth stage of metalorganic chemical vapor deposition has an important influence on the quality of a GaN epilayer grown on a low-temperature AIN buffer layer and c-plane sapphire substrate. A weaker yellow luminescence, a narrower half-width of the X-ray diffraction peak, and a higher electron mobility result when a lower V/III ratio is taken. The intensity of in situ optical reflectivity measurements indicates that the film surface is rougher at the beginning of GaN growth, and a longer time is needed for the islands to coalesce and for a quasi-two dimensional mode growth to start. A comparison of front- and back-illuminated photoluminescence spectra confirms that many threading dislocations are bent during the initial stage, leading to a better structural quality of the GaN layer. (C) 2007 Elsevier B.V. All rights reserved.

Nanoelectronic devices-resonant tunnelling diodes grown on InP substrates by molecular beam epitaxy with peak to valley current ratio of 17 at room temperature

This paper reports that lnAs/In0.53Ga0.47As/AlAs resonant tunnelling diodes have been grown on InP substrates by molecular beam epitaxy. Peak to valley current ratio of these devices is 17 at 300K. A peak current density of 3kA/cm(2) has been obtained for diodes with AlAs barriers of ten monolayers, and an In0.53Ga0.47As well of eight monolayers with four monolayers of InAs insert layer. The effects of growth interruption for smoothing potential barrier interfaces have been investigated by high resolution transmission electron microscope.

A differential recursive scheme for suppression of Peak to average power ratio for OFDM

A differential recursive scheme for suppression of Peak to average power ratio (PAPR) for Orthogonal frequency division multiplexing (OFDM) signal is proposed in this thesis. The pseudo-randomized modulating vector for the subcarrier series is differentially phase-encoded between successive components in frequency domain first, and recursion manipulates several samples of Inverse fast Fourier transformation (IFFT) output in time domain. Theoretical analysis and experimental result exhibit advantage of differential recursive scheme over direct output scheme in PAPR suppression. And the overall block diagram of the scheme is also given.

Compensation ratio-dependent concentration of a VInH4 complex in n-type liquid encapsulated Czochralski InP

The concentration of hydroen-indium vacancy complex VInH4 in liquid encapsulated Czochralski undoped and Fe-doped n-type InP has been studied by low-temperature infrared absorption spectroscopy. The VInH4 complex is found to be a dominant intrinsic shallow donor defect with concentrations up to similar to 10(16) cm(-3) in as-grown liquid encapsulated Czochralski InP. The concentration of the VInH4 complex is found to increase with the compensation ratio in good agreement with the proposed defect formation model of Walukiewicz [W. Walukiewicz, Phys. Rev. B 37, 4760 (1998); Appl. Phys. Lett. 54, 2094 (1989)], which predicts a Fermi-level-dependent concentration of amphoteric defects. (C) 1998 American Institute of Physics, [S0003-6951(98)04435-0].

High-Q and High-extinction-ratio Microdisk Add-drop Filter with Grating Couplers in Silicon-on-Insulator

Submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-06-04T08:08:51Z No. of bitstreams: 1 High-Q and High-extinction-ratio Microdisk Add-drop Filter with Grating Couplers in Silicon-on-Insulator.pdf: 662474 bytes, checksum: dbdd3fba410c875bd74a6d4823930a44 (MD5)

Optimization of VI/II pressure ratio in ZnTe growth on GaAs(001) by molecular beam epitaxy

ZnTe epilayers were grown on GaAs(0 0 1) substrates by molecular beam epitaxy (MBE) at different VI/II beam equivalent pressure (BEP) ratios (R-VI/II) in a wide range of 0.96-11 with constant Zn flux. Based on in situ reflection high-energy electron diffraction (RHEED) observation, two-dimensional (2D) growth mode can be formed by increasing the R-VI/II to 2.8. The Te/Zn pressure ratios lower than 4.0 correspond to Zn-rich growth state, while the ratios over 6.4 correspond to Te-rich one. The Zn sticking coefficient at various VI/II ratios are derived by the growth rate measurement. The ZnTe epilayer grown at a R-VI/II of 6.4 displays the narrowest full-width at half-maximum (FWHM) of double-crystal X-ray rocking curve (DCXRC) for (0 0 4) reflection. Atomic force microscopy (AFM) characterization shows that the grain size enlarges drastically with the R-VI/II. The surface root-mean-square (RMS) roughness decreases firstly, attains a minimum of 1.14 nm at a R-VI/II of 4.0 and then increases at higher ratios. It is suggested that the most suitable R-VI/II be controlled between 4.0 and 6.4 in order to grow high-quality ZnTe epitaxial thin films.

新型土壤改良剂对夏玉米生理生长特性的影响

通过大田玉米试验,验证新型土壤改良剂对夏玉米生育期土壤水分、紧实度及玉米生理生长特性的影响。结果表明,施用改良剂PJG和PFL夏玉米全生育期平均株高、叶面积分别高于对照20.7%、19.75%和51.88%、72.37%;2种改良剂对干物质积累的影响存在差异,影响效果依次为茎干重>叶干重>根干重。夏玉米光合速率和叶绿素含量受土壤改良剂影响较大,PJG和PFL分别高于对照29.96%、24.48%和73.36%、68.53%。在0~10 cm土层内,施用PJG和PFL后土壤紧实度分别低于对照44.44%和42.91%。施用改良剂PJG后,0~20 cm土层土壤含水量维持在田间持水量的77.9%左右,未施用改良剂土壤,夏玉米生育期表层土壤含水量起伏变化较大。土壤改良剂PJG在夏玉米的施用效果略好于PFL。

Strained MQW electro-absorption modulators with high extinction ratio and low capacitance

We fabricate an electro-absorption modulator for optical network system using a new strategy, the improved modulation properties of the strained InGaAs/InAlAs MQW show it's polarization independent, high extinction ratio (> 40dB) and low capacitance (C <0.6pF) which can achieve an ultra-high frequency(> 10GHz). The device is be used in 10Gbps optical time division multiplex (OTDM) system as a signal generator.

CO2浓度升高对三种树木叶片化学和舞毒蛾幼虫取食及生长的影响

探讨全球气候变化的生物学和生态学效应是当今生态学中的热点，研究大气CO2浓度升高对植物-昆虫相互作用关系的影响具有重要的理论和实践意义。本文使用开顶式气室（Open-top chamber，OTC）在野外条件下研究了CO2浓度升高对三种树木（小青杨、白桦和蒙古栎）叶片化学成分含量的影响，以及树木叶片品质变化对一种广食性森林昆虫（舞毒蛾）幼虫取食、生长发育和取食偏嗜性的影响。得出如下结果：（1）CO2浓度升高对3个受试树种叶片中的营养成分及次生代谢物含量均有显著影响，总体表现为氮含量降低，而碳氮比、非结构性碳水化合物、总酚和缩合丹宁含量增加。叶片中的化学成分含量可随时间发生显著变化，不同树种、甚至同一树种不同冠层高度的叶片对CO2浓度升高的响应强度也是不同的。叶片的干物质含量和比叶重对CO2浓度升高的响应不显著。（2）室内非选择性取食实验、室内选择性取食实验以及上树取食饲养方式下的多龄期取食实验，均发现高浓度CO2处理组内舞毒蛾幼虫的生长发育受到显著抑制。但对四龄舞毒蛾幼虫所进行的短期生物测定并未发现不同CO2浓度处理下幼虫的生长发育速率、对食物的取食率和转化率等昆虫营养指标存在显著差异。（3）叶片品质的降低是导致舞毒蛾幼虫生长发育受抑制的主要原因。但是总体上，CO2浓度升高导致的叶片品质变化并未显著影响幼虫的取食率和取食量。（4）舞毒蛾幼虫对不同叶片种类表现出清晰的取食选择性，这种选择性在其幼龄期就可表现出来。幼虫对小青杨上层叶片有最显著的偏嗜性，对蒙古栎下层叶片有最明显的拒食性。但是CO2浓度升高导致的叶片品质变化对舞毒蛾幼虫的取食选择性和寄主偏嗜行为并未产生显著影响。（5）检测出高浓度CO2处理组内舞毒蛾幼虫虫粪中含有浓度更高的植物次生代谢物质（总酚和缩合单宁），这很可能是昆虫整体生长发育受抑制的重要原因之一。