New insight into the origin of twin and grain boundary in InP

X-ray reflectivity curves show bi-crystal (twin) characteristics. Defect segregations at the twin boundary can be seen, whereas stress is relaxed at the edge of the boundary. Relaxation of the stress resulted in the formation of twins and other defects. As a result of the formation of such defects, a defect-free and stress-free zone or low defect density and small stress zone is created around the defects. Stress, chemical stoichiometry deviation and non-homogeneous distribution of impurities are the key factors that cause twins in LEC InP crystal growth. (C) 1999 Elsevier Science Ltd. All rights reserved.

外场诱导的溶液浇铸苯基联苯基呃唑（PBD）单晶及其微观电学性能

本论文以2-（4-叔丁基苯基）-5-（4-二联苯基）-1，3，4-呃唑（PBD）单晶为研究对象，在对溶液浇铸的PBD多晶薄膜的晶体结构的研究基础上，通过调控溶液浇铸PBD单晶生长过程中的溶剂挥发和外加静电场，获得了晶胞轴轴和c轴垂直基板取向的不同的PBD单晶。利用导电探针原子力显微镜考察了与之相对应的电学性能及其各向异性。在空气中溶液浇铸的PBD多晶薄膜表现出c轴垂直基板取向的特征。基于这一现象，我们通过控制溶剂场中溶剂挥发的时间，即控制溶剂挥发的动力学过程，得到了大面积有序排列的c轴垂直基板取向的PBD单晶。在溶剂挥发的过程中，通过原子力显微镜观察到薄膜的形貌发生明显的改变，此现象表明PBD由亚稳态的多形态（Polymorphs）转变为单晶。当在这一过程中施加一个场强为5kV／cm的静电场时，可以得到b轴垂直基板取向的PBD单晶。我们利用导电探针原子力显微镜测量了制备在Au／S基板上这两种不同取向结构的PBD单晶在纳米尺度上的电学性能，观察到了纳米尺度上的PBD单晶的电学各向异性。电荷的传输性能是在导电金探针和Au／S基板之间测量的。在电场诱导作用下得到的b轴垂直基板取向的PBD单晶测量得到其电子迁移率为3*10-3cm2/Vs。而通过动力学控制溶剂挥发得到的c轴垂直基板取向的PBD单晶，在低电压域内测量得到的电子迁移率比电场诱导作用下得到的轴垂直基板取向的PBD单晶要高两个数量级。这么高的电荷各向异性是由于相邻分子之间兀轨道重叠的程度不同而决定的。

PHYSICAL VAPOR TRANSPORT AND CRYSTAL-GROWTH OF GESEXTE1-X SOLID-SOLUTIONS

Physical vapor transport studies of GeSe(x)Te1 - x (x = 0.1, 0.2, 0.3, and 0.4) solid solutions demonstrated, that individual, large single crystals of these materials can be grown in closed ampoules. A compositional analysis of the grown crystals revealed, that the mass transport (crystal growth) process under steady-state conditions is pseudo-congruent and controlled by diffusion processes in the source material. From these experiments, the degree of non-stoichiometry (Ge-vacancy concentrations) of GeSe(x)Te1 - x single crystals could be estimated. The effects of the cubic to rhombohedral phase transformation during cooling on the microstructure and morphology of the grown mixed crystals are observed. This work provides the basis for subsequent defect studies and electrical measurements on these crystals.

High-mobility Ga-polarity GaN achieved by NH3-MBE

GaN epilayers were grown on (0001) sapphire substrates by NH3-MBE and RF-MBE (radio frequency plasma). The polarities of the epilayers were investigated by in-situ RHEED, chemical solution etching and AFM surface examination. By using a RF-MBE grown GaN layer as template to deposit GaN epilayer by NH3-MBE method, we found that not only Ga-polarity GaN films were repeatedly obtained, but also the electron mobility of these Ga-polarity films was significantly improved with a best value of 290 cm(2)/V.s at room temperature. Experimental results show it is an easy and stable way for growth of high quality Ga-polarity GaN films.

Twin and grain boundary in InP: A synchrotron radiation study

Experimentally observed X-ray reflectivity curves show bi-crystal(twin) characteristics. The study revealed that there was defect segregation at the twin boundary. Stress was relaxed at the edge of the boundary. Relaxation of the stress resulted in formation of twin and other defects. As a result of formation of such defects, a defect-free and stress-free zone or low defect density and small stress zone is created around the defects. So a twin model was proposed to explain the experimental results. Stress(mainly thermal stress), chemical stoichiometry deviation and impurities nonhomogeneous distributions are the key factors that cause twins in LEC InP crystal growth. Twins on (111) face in LEC InP crystal were studied. Experimental evidence of above mentioned twin model and suggestions on how to get twin-free LEC InP single crystals will be discussed.

The effects of carbonized buffer layer on the growth of SiC on Si

Carbonized buffer layers were formed with C2H4 on Si(100) and Si(111) substrates using different methods and SIC epilayers were grown on each buffer layer at 1050 degrees C with simultaneous supply of C2H4 and Si2H6. The structure of carbonized and epitaxy layers was analyzed with in situ RHEED. The buffer layers formed at 800 degrees C were polycrystalline on both Si(100) and Si(111) substrates whereas they were single crystals, with twins on Si(100) and without tu ins on Si(111)substrates. when formed with a gradual rise in substrate temperature from 300 degrees C to growth temperature. Raising the substrate temperature slowly results in the formation of more twins. Epilayers grown on carbonized polycrystalline lavers are polycrystalline. Single crystal epilayers without twins grow on single crystalline buffer layers without twins or with a few twins. (C) 1999 Elsevier Science B.V. All rights reserved.

氨热法生长氮化镓晶体的数值模拟

氮化镓晶体是继单晶硅之后的一种新型的半导体材料. 本文利用有限体积法模拟了氨热法生长氮化镓晶体中流场的瞬态特性, 研究了隔板开孔10％时流场结构、温度场、浓度场. 发现对于隔板开孔率(10％)的情形, 中心开孔及边缘间隙的平均速度表现为振荡的特性, 中心开孔速度大多是正的, 边缘开孔大多是负的. 大的温度梯度发生在在高压釜壁面与液体的交界处与隔板周围. 物质由多孔介质区向生长区输运

Property measurement of the CsI(Tl) crystal prepared at IMP

Large-sized CsI (Tl) single crystals, similar to phi 100 mm x 350 mm, have been grown successfully, and this CsI(Tl) coupled with PD has been successfully utilized at RIBLL (the Radioactive Ion Beam Line in Lanzhou) to measure the energy of heavy ions as a stopping detector. The performances of CsI(Tl) detector coupled with PD and APD have been tested and compared, including the temperature dependence of scintillating light yield

Color center formation in alpha-Al2O3 induced by high energy heavy ions

Single crystals of alpha-alumina were irradiated at room temperature with 1.157 (GeVFe)-Fe-56, 1.755 (GeVXe)-Xe-136 and 2.636 (GeVU)-U-238 ions to fluences range from 8.7 x 10(9) to 6 x 10(12) ions/cm(2). Virgin and irradiated samples were investigated by ultraviolet visible absorption measurements. The investigation reveals the presence of various color centers (F, F+, F-2(2+), F-2(+) and F-2 centers) appearing in the irradiated samples. It is found that the ratio of peak absorbance of F-2 to F centers increases with the increase of the atomic numbers of the incident ions from Fe, Xe to U ions, so do the absorbance ratio of F-2(2+) to F+ centers and of large defect cluster to F centers, indicating that larger defect clusters are preferred to be produced under heavier ion irradiation. Largest color center production cross-section was found for the U ion irradiation. The number density of single anion vacancy scales better with the energy deposition through processes of nuclear stopping, indicating that the nuclear energy loss processes determines the production of F-type defects in heavy ion irradiated alpha-alumina.

Structural and optical properties of 6H-SiC helium-implanted at 600 K

Single crystals of 6H-SiC were implanted at 600 K with 100 key He ions to three successively fluences and subsequently annealed at different temperatures ranging from 873 to 1473 K in vacuum. The recovery of lattice damage was investigated by different techniques including Rutherford backscattering spectrometry in channeling geometry, Raman spectroscopy and Fourier transform infrared spectroscopy. All three techniques showed that the damage induced by helium ion implantation in the lattice is closely related to the fluence. Rutherford backscattering spectrometry/channeling data on high temperature implantations suggest that for a fluence of 3 x 10(16) He+/cm(2), extended defects are created by thermal annealing to 1473 K. Apart from a well-known intensity decrease of scattering peaks in Raman spectroscopy it was found that the absorbance peak in Fourier transform infrared spectroscopy due to the stretching vibration of Si-C bond shifted to smaller wave numbers with increasing fluence, shifting back to larger wave numbers with increasing annealing temperature. These phenomena are attributed to different lattice damage behavior induced by the hot implantation process, in which simultaneous recovery was prevailing. (C) 2010 Elsevier B.V. All rights reserved.

Enhanced photoluminescence of Ar+ implanted sapphire before and after annealing

In this paper, we studied the changes in the photoluminescence spectra of the Ar+ ion implanted monocrystalline sapphire annealed at different atmospheres and different temperatures. Single crystals of sapphire (Al2O3) with the (1 0 (1) over bar 0) (m-samples) orientation were implanted at 623 K with 110 keV Ar+ ions to a fluence of 9.5 x 10(16) ions/cm(2). Photoluminescence measurement of the as-implanted sample shows a new emission band at 506 nm, which is attributed to the production of interstitial Al atoms. The intensity of emission band at 506 nm first increased then decreased with increase in annealing temperature. For the same annealing temperature, the intensity of PL peak at 506 nm of the sample annealed in air was higher than the sample annealed in vacuum. The experimental results show that the intensity of the PL peak at 506 nm of Ar-implanted sapphire can be enhanced by subsequent annealing with an enhancement of nearly 20 times. The influence of thermal annealing of the Ar-implanted samples on the new 506 nm emission band was discussed. (C) 2009 Elsevier B.V. All rights reserved.

Rectangular AgIn(WO4)(2) nanotubes: A promising photoelectric material

Rectangular AgIn(WO4)(2) nanotubes with a diameter range of 80 to 120 nm and length up to 2 mu m have been synthesized by a hydrothermal method. These nanotubes exhibit interesting white light emissions when using 320 nm as the excitation wavelength. A photocatalytic reaction for water decomposition to evolve K, was performed under UV irradiation, and the rate of H, evolution is nearly seven times that of the sample prepared by a solid-state reaction, which shows much higher photocatalytic activities compared with their bulk counterparts.

One-pot synthesis of silver nanoplates and charge-transfer complex nanofibers

We describe a facile one-pot process to synthesize Ag nanoplates by reducing silver nitrate with 3,3',5,5'-tetramethylbenzidine (TMB) at room temperature. The silver nanoplates were highly oriented single crystals with (111) planes as the basal planes. TMB can be readily oxidized to charge-transfer (CT) complex between TMB, as a donor, and (TMB)(2+), as an acceptor. The pi-pi interaction of the neutral amine (TMB) and diiminium structure (dication, TMB2+) result in the formation of one-dimensional CT complex nanofiber.

Charge transport in accumulation layers of organic heterojunctions

We studied the charge transport in organic heterojunction films consisting of copper phthalocyanine (CuPc) and copper hexadecafluorophthalocyanine (F16CuPc). The heterojunction effect between CuPc and F16CuPc induced high-density carriers at both sides of heterojunction. The Hall effect was observed at room temperature, which demonstrated the existence of free carriers and their delocalized transport under heterojunction effect. The Hall mobility of 1.2 cm(2)/V s for holes and 2.4 cm(2)/V s for electrons indicated that the transport capability of the heterojunction films is comparable to single crystals. The transport process was further explained by the multiple trap-and-release model according to the temperature dependence of conduction.