高阶群速度色散引起的高斯超短脉冲宽度的展宽和形变

基于动量守恒和光参变过程中的三波耦合波方程, 和负单轴非线性光学晶体CsLiB6O10的色散方程, 研究了在光参变效应中超短激光脉冲由于群速度色散引起的展宽和形变。数值模拟显示, 在超短脉冲波形为双曲正割形和无啁啾调制时, 高阶群速度色散引起的超短脉冲为50 fs时, 晶体长度为10 mm, 紫外光213 nm作为基波入射时的脉冲展宽是波长为532 nm绿光在同等条件下的1.6倍。脉冲展宽程度与入射波长和晶体长度有关, 波长越短和晶体长度越长则脉冲展宽和波形变化越严重,高阶色散引起的超短高斯脉冲展宽, 将

参变过程中的群速延迟对晶体匹配长度的影响

基于能量守恒和三波耦合波方程, 建立了超短脉冲在参变过程中二次谐波产生时的I类和II类相位匹配条件、基波与谐波之间的群速延迟时间、以及群速失配对晶体长度限制的理论基础。以负单轴非线性光学晶体CsLiB6O10为例, 分析和数值计算了超短脉冲宽度为100 fs时, 谐波的群速匹配长度随基波波长变化的规律。研究结果表明在I类相位匹配条件下, 基波波长为642 nm时, 群速延迟最小, 相应的群速匹配晶体长度最长为19.1 mm;在II类相位匹配条件下, 基波波长为767 nm, 群速延迟最小, 群速匹配长度最

Double refraction and reflection of sequential crystal interfaces with arbitrary orientation of the optic axis and application to optimum design

The general formulation of double refraction or internal double reflection for any directions of incidence and arbitrary orientation of the optic axis in a uniaxial crystal is analysed in terms of Huygens' principle. Then double refraction and double reflection along the sequential interfaces in a crystal are discussed. On this basis, if the parameters of the interface are chosen appropriately, the range of angular separation between the ordinary ray and extraordinary ray can be much greater, It is useful for crystal element design. Finally, as an example, an optimum design of the Output end interface for a 2 x 2 electro-optic switch is given.

Pulse shaping properties of volume holographic gratings in anisotropic media

Based on a modified coupled wave theory, the pulse shaping properties of volume holographic gratings (VHGs) in anisotropic media VHGs are studied systematically. Taking photorefractive LiNbO3 crystals as an example, the combined effect that the grating parameters, the dispersion and optical anisotropy of the crystal, the pulse width, and the polarization state of the input ultrashort pulsed beam (UPB) have on the pulse shaping properties are considered when the input UPB with arbitrary polarization state propagates through the VHG. Under the combined effect, the diffraction bandwidth, pulse profiles of the diffracted and transmitted pulsed beams, and the total diffraction efficiency are shown. The studies indicate that the properties of the shaping of the o and e components of the input UPB in the crystal are greatly different; this difference can be used for pulse shaping applications. (c) 2006 Optical Society of America.

Anisotropic-source-induced changes of the degree of polarization of stochastic electromagnetic beams on propagation

It is shown that stochastic electromagnetic beams may have different degrees of polarization on propagation, even though they have the same coherence properties in the source plane. This fact is due to a possible difference in the anisotropy of the field in the source plane. The result is illustrated by some examples.

双中心全息记录的矢量分析与记录方向优化

对描述双掺杂晶体非挥发性全息记录动力学过程的Kukhtarev方程进行了矢量分析, 分析中考虑了体光生伏特效应和外加电场的作用。在小信号近似的基础上给出了双中心全息记录中记录与固定阶段空间电荷场的矢量解析解。在综合考虑空间电荷场的各向异性以及晶体有效电光系数的各向异性后, 给出了双中心全息记录的优化记录方向。结果表明, 对(Fe, Mn):LiNbO3晶体633 nm寻常光记录, 优化记录方向主要由有效电光系数决定, 光栅波矢与光轴夹角为22°, 方位角为30°;对(Fe, Mn):LiNbO3晶体633

Structure and properties of amorphous thin film for optical data storage

In this paper the magnetic and magneto-optical properties of amorphous rare earth-transition metal (RE-TM) alloys as well as the magnetic coupling in the multi-layer thin films for high density optical data storage are presented. Using magnetic effect in scanning tunneling microscopy the clusters structure of amorphous RE-TM thin films has been observed and the perpendicular magnetic anisotropy in amorphous RE-TM thin films has been interpreted. Experimental results of quick phase transformation under short pulse laser irradiation of amorphous semiconductor and metallic alloy thin films for phase change optical recording are reported. A step-by-step phase transformation process through metastable states has been observed. The waveform of crystallization propagation in micro-size spot during laser recording in amorphous semiconductor thin films is characterized and quick recording and erasing mechanism for optical data storage with high performance are discussed. The nonlinear optical effects in amorphous alloy thin films have been studied. By photo-thermal effect or third order optical nonlinearity, the optical self-focusing is observed in amorphous mask thin films. The application of amorphous thin films with super-resolution near field structure for high-density optical data storage is performed. (c) 2007 Elsevier B.V. All rights reserved.

Yb：Ca5（PO4）3F激光晶体的生长缺陷

采用提拉法生长了质量优异的Yb：Ca5（PO4）2F（Yb：FAP）晶体。运用化学腐蚀，光学显微镜、扫描电子显微镜以及能量散射光谱仪观察了该晶体中的生长条纹和包裹物等宏观缺陷，以及晶体的位错腐蚀形貌、位错密度及其分布情况，同时观察了晶体中亚晶界的形态。由晶体中位错的径向变化以及生长条纹可知：晶体在生长过程中为微凸界面生长。高温下CaF2的挥发造成了在晶体生长后期熔体中组分偏离化学计量比，出现组分过冷，形成包裹物。且位错密度显著增加。Yb：FAP晶体的各向异性使得晶体在（10 10）面的位错蚀坑形状、大小以

γ-LiAIO2上非极性ZnO薄膜制备及其光谱性质研究

利用激光脉冲沉积（PLD）技术在（302）γ-LiAIO2衬底上成功生长了非极性的a面（112^-0）γZnO薄膜．衬底温度为350℃时，薄膜是混合取向（a向和C向），以c面ZnO为主，且晶粒尺寸分布很宽；提高温度达500℃，薄膜变为单一的（1120）取向，摇摆曲线半高宽O.65^o，晶粒尺寸分布趋窄，利用偏振透射谱可以明显看出其面内的各向异性．衬底温度650℃下制备的样品晶粒继续长大，虽然摇摆曲线半高宽变大，但光致发光谱（PL）带边发射峰半高宽仅为105meV，比在350℃，500℃下制备的样品小1／5

Anisotropic crystallographic properties, strain, and their effects on band structure of m -plane GaN on LiAlO2 (100)

The m-plane GaN films grown on LiAlO2(100) by metal-organic chemical vapor deposition exhibit anisotropic crystallographic properties. The Williamson-Hall plots point out they are due to the different tilts and lateral correlation lengths of mosaic blocks parallel and perpendicular to GaN[0001] in the growth plane. The symmetric and asymmetric reciprocal space maps reveal the strain of m-plane GaN to be biaxial in-plane compress epsilon(xx)=-0.79% and epsilon(zz)=-0.14% with an out-of-plane dilatation epsilon(yy)=0.38%. This anisotropic strain further separates the energy levels of top valence band at Gamma point. The energy splitting as 37 meV as well as in-plane polarization anisotropy for transitions are found by the polarized photoluminescence spectra at room temperature. (c) 2008 American Institute of Physics.

Structural and optical properties of a-plane ZnO thin films synthesized on γ-LiAlO2 (302) substrates by low pressure metal-organic chemical vapor deposition

Nonpolar a-plane (1120) ZnO thin films have been fabricated on gamma-LiAlO2 (302) substrates via the low-pressure metal-organic chemical vapor deposition. An obvious intensity variation of the E-2 mode in the Raman spectra indicates that there exhibits in-plane optical anisotropy in the a-plane ZnO thin films. Highly-oriented uniform grains of rectangular shape can be seen from the atomic force microscopy images, which mean that the lateral growth rate of the thin films is also anisotropic. It is demonstrated experimentally that a buffer layer deposited at a low temperature (200 degrees C) can improve the structural and optical properties of the epilayer to a large extent. (c) 2007 Elsevier B.V. All rights reserved.

γ-LiAlO_2上a面ZnO薄膜的光谱特性研究

利用激光脉冲沉积(PLD)技术在(302)γ-LiAlO2衬底上成功生长了非极性的a面(1120)ZnO薄膜,光致发光谱(PL)带边发射峰半峰宽仅为115meV.研究了非极性ZnO薄膜光谱特性的面内各向异性,发现随着入射光偏振方向改变,在偏振透射光谱上,吸收边移动了20meV,这与A、B激子和C激子的能量差一致;而在拉曼光谱上,激发光偏振方向的改变导致E2模式的强度发生明显改变.

Characterization of m-plane ZnO thin film on gamma-LiAlO2 (100) substrate by metal-organic chemical vapor deposition

Non-polar (1 (1) over bar 00)m-plane ZnO thin film has been prepared on gamma-LiAlO2 (100)substrate via the low pressure metal organic chemical vapor deposition. Obvious intensity variation of the E-2 mode in the polarized Raman spectra and the absorption edge shift in the polarized optical transmission spectra indicate that the m-plane film exhibits optical anisotropy, which have applications in certain optical devices, such as the UV modulator and polarization-dependent beam switch. From the atomic force microscopy images, highly-oriented uniform-sized grains of rectangular shape were observed. (c) 2008 Elsevier B.V. All rights reserved.

Analysis of electromagnetic propagation in birefringent thin film

In general, the propagating behavior of extraordinary wave in anisotropic materials is different from that in isotropic materials. With the tangential continuity of Maxwell's equations, the electromagnetic propagating behaviors have been investigated at the incident and exit interfaces of the uniaxial anisotropic thin film. The emphasis was placed on two interesting optical phenomena such as homolateral refraction behavior and wide-angle Brewster's phenomenon, which occurred at the interfaces of uniaxial anisotropic thin film.

利用分光光度计测量光学晶体的折射率

晶体折射率的准确测定是晶体上薄膜器件设计的基础。介绍了利用分光光度计测量晶体折射率的方法，通过背面影响系数法、背面镀增透膜和将两者结合起来的方法消除晶体反射率测量时背面反射带来的影响，给出了具体的步骤并对测量误差进行了分析。由于晶体的光学各向异性，采用起偏器扫描的方法测量晶体光学性质随方向的变化。通过对LiB3P5晶体的折射率的测量，证实了该方法的可行性并可用于其他光学晶体折射率的测量。