The role of plants in channel-dyke and field irrigation systems for domestic wastewater treatment in an integrated eco-engineering system

Eight kinds of plants were tested in channel-dyke and field irrigation systems. The removal rates of TP, phosphate, TN, ammonia, CODcr and BOD, in the channel-dyke system with napiergrass (Pennisetum purpurem Schumach, x Pennisetum alopecuroides (L.) Spreng American) were 83.2, 82.3, 76.3, 96.2, 73.5 and 85.8%, respectively. The field irrigation systems with rice I-yuanyou No.1(88-132) (Oryza sativa L.) and rice II- suakoko8 (Oryza glaberrima) had high efficiency for N removal; the removal rate were 84.7 and 84.3%, respectively. The mass balance data revealed that napiergrass, rice I and II were the most important nutrient sinks, assimilating more than 50% of TP and TN. Plant uptake of N and P as percentage of total removal from wastewater correlated with biomass yield of and planting mode. (C) 2000 Elsevier Science B.V. All rights reserved.

Growth of Chlorella vulgaris in cultures with low concentration dimethoate as source of phosphorus

The growth response of Chlorella vulgaris to low concentration of dimethoate, an organophosphorus pesticide, was studied. Results show that cell density, protein content, chlorophyll pigment and alkaline phosphatase activity were all increased, which indicates that low concentration dimethoate can accelerate growth of Chlorella vulgaris. (C) 1997 Elsevier Science Ltd.

ROLE OF PHOSPHORUS CYCLING IN ALGAL METABOLISM AND ALGAL SUCCESSION IN LAKE DONGHU, CHINA

The role of phosphorus cycling in algal metabolism was studied in a shallow lake, Donghu, in Wuhan using the methods of measuring cell quota C, N and P, and calculating nutrients uptake rate by algal photosynthesis. The mean daily phosphorus uptake rate of phytoplankton varied between 0.04-0.11 and 0.027-0.053 g/m2/d in station I and station II respectively. The turnover time of phosphorus in phytoplankton metabolism ranged from 0.75-5.0 days during 1979-1986. The available P was 0.176 (+/- 0.156) g/m3 (mean +/- SD) in 1982 and 0.591 (+/- 0.24) g/m3 in 1986. The relationship between P/B ratio (Y) and TP (X: mg/l) was described by the following regression equation Y = 1.163 + 0.512logX (r = 0.731, P < 0.001). The dynamics of algal biomass and algal species succession were monitored as the indicators of environmental enrichment. The small-sized algae have replaced the blue-green algae as the dominant species during 1979-1986. The small-sized algae include Merismopedia glauca, Cryptomonas ovata, Cryptomonas erosa, several species Cyclotella. There has been drastic decrease in algal biomass and an obvious increase in P/B ratio. A nutrient competition hypothesis is proposed to explain the reason of the disappearance of blue-green algae bloom. The drastic change in algal size and the results in high P/B ratio (reaching a maximum mean daily ratio of 1.09 in 1986) may suggest a transition of algal species from K-selection to r-selection in Lake Donghu.

Photoluminescence characteristics of InP annealed in phosphorus and iron phosphide ambiences

Photo luminescence (PL) spectroscopy has been used to study InP annealed in phosphorus and iron phosphide ambiences. Noticeable PL emissions related with thermally induced defects have been detected in undoped InP annealed in iron phosphide ambience. Origins of the PL emissions have been discussed. (c) 2004 Elsevier Ltd. All rights reserved.

Effect of ion flux on recrystallization and resistance lowering in phosphorus-implanted (0001)-oriented 4H-SiC

High-dose ion implantation of phosphorus into 4H-SiC (0001) has been investigated with three different ion fluxes ranging from 1.0 to 4.0 x 10(12) P(+)cm(-2.)s(-1) and keeping the implantation dose constant at 2.0 x 10(15) P(+)cm(-2). The implantations are performed at room temperature and subsequently annealed at 1500 degrees C. Photoluminescence and Raman scattering are employed to investigate the implantation-induced damages and the residual defects after annealing. The electrical properties of the implanted layer are evaluated by Hall effect measurements on the sample with a van der Pauw configuration. Based on these results, it is revealed that the damages and defects in implanted layers can be greatly reduced by decreasing the ion flux. Considering room temperature implantation and a relatively low annealing temperature of 1500 degrees C, a reasonably low sheet resistance of 106 Omega/square is obtained at ion flux of 1.0 x 10(12) P(+)cm(-2.)s(-1) with a donor concentration of 4.4 x 10(19)cm(-3).

Microdefects and electrical uniformity of InP annealed in phosphorus and iron phosphide ambiances

Microdefects originating from impurity-dislocation interactions in undoped InP that had been annealed in phosphorus and iron phosphide ambiances have been studied using optical microscopy. The electrical uniformity of the annealed wafer is improved by removing impurity aggregation around dislocations and by eliminating impurity striations in the annealing process. Compared to as-grown Fe-doped semi-insulating (SI) material, SI wafers obtained by annealing undoped InP in iron phosphide ambiances have better uniformity. This is attributed to the avoidance of Fe aggregation around dislocations and dislocation clusters, Fe precipitation and impurity striations, and is related to the use of a low concentration of Fe in the annealed material. The influence of Fe diffusion on the migration of dislocations in the annealing process has been studied and reviewed. (C) 2003 Elsevier B.V. All rights reserved.

Sol-gel matrix modified microstructured optical fibre towards a fluoride sensitive optical probe

In this article, we report an optical fluoride probe based on microstructured polymer optical fibers (MPOFs) which is modified with morin-Al complex doped silica gel film. This probe is fabricated by sol-gel fluxion coating process. Sol solution doped with morin-Al is directly inhaled into array holes of MPOF and then forms morin-Al-gel matrix film in them. The sensing probe shows different fluorescence intensity to different fluoride ion concentrations in the aqueous solution. The range of response is 550 mmol/L, under the condition of pH 4.6. Crown Copyright (C) 2009 Published by Elsevier B.V. All rights reserved.

小麦/玉米苗期磷累积量对介质供磷水平反应的差异

小麦和玉米苗期是磷素营养的关键期和敏感期,研究两种作物苗期对介质供磷反应,可为合理施用磷肥提供参考。试验设缺磷对照、低磷胁迫、中等磷胁迫和正常供磷(P_2O_5含量分别为0、0.05mmol·L~(-1)、0.3mmol·L~(-1)和0.5mmol·L~(-1))4种磷水平,选取小麦"小偃22号"、"兰考4号"和玉米"屯玉65号"、"户单4号"为指标作物,用营养液培养法研究小麦、玉米苗期磷累积量对介质不同供磷水平的反应差异。结果表明,不同介质供磷水平下,两种作物苗期磷累积量显著不同且因作物类型、基因型、器官及测定时期不同而异。总体而言,介质供磷后,苗期早期生长阶段(出苗后25d以前),小麦的介质最佳供磷水平较玉米高;苗期后期(出苗后40～50d),小麦和玉米最佳供磷水平一致。如果以低磷胁迫作为对比进行分析,玉米苗期整株磷累积量对介质供磷的敏感性比小麦强;从不同基因型来看:"兰考4号"对介质供磷的敏感性强于"小偃22号","屯玉65号"和"户单4号"基本一致。缺磷条件下小麦较玉米磷效率高,供磷条件下玉米较小麦高;但不同基因型间规律性较差。

IMPROVEMENT OF STRUCTURAL INSTABILITY OF THE ION-SENSITIVE FIELD-EFFECT TRANSISTOR (ISFET)

Three causes involved in the instability of the ISFET are proposed in this study. First, it is ascertained that hydroxyl group resident at the surface of the Si3N4 film or in the electrolyte solution is most active and subject to gain or loss of electrons. This is one of the main causes for ISFET structural instability. Secondly, the stability of the pH-sensitive FET varies with deposition conditions in the fabrication process of the ISFET. This proves to be another cause of ISFET instability. Thirdly, the pH of the measured solution varies with the measuring process and time, contributing to the instability, but is not a cause of the instability of the pH-ISFET itself. We utilized the technique of readjusting and controlling the ratio of hydroxyl groups to amine groups to enhance the stability of the ISFET. Our techniques to improve stability characteristics proved to be effective in practice.

EFFECT OF TOTAL HYDROGEN CONTENT IN SILICON-NITRIDE SENSITIVE FILM ON PERFORMANCE OF ISFET

Quantitative determinations of the hydrogen content and its profile in silicon nitride sensitive films by the method of resonant nuclear reaction have been carried out. At a deposition temperature of 825-degrees-C, hydrogen exists in an LPCVD silicon nitride sensitive film and the hydrogen content on its surface is in the range (8-16) x 10(21) cm-3, depending on the different deposition processes used. This hydrogen content is larger than the (2-3) x 10(21) cm-3 in its interior part, which is homogeneous. Meanwhile, we observe separate peaks for the chemical bonding configurations of Si-H and N-H bonds, indicated by the infrared absorption bands Si-O (1106 cm-1), N-H (1200 cm-1), Si-H-3 (2258 cm-1) and N-H-2 (3349 cm-1), respectively. The worse linear range of the ISFET is caused by the presence of oxygen on the surface of the silicon nitride sensitive film. The existence of chemical bonding configurations of Si-H, N-H and N-Si on its surfaces is favourable for its pH response.