Er^3＋／Yb^3＋共掺的氧化镧钇透明陶瓷的光谱性能研究

采用传统无压烧结工艺制备了Er^3＋／Yb^3＋共掺的氧化镧钇透明陶瓷并对其光谱性能进行了研究．样品具有较大的吸收和发射截面．La2O3的添加使样品的荧光寿命（τs）与玻璃接近，当Yb^3＋和Er^3＋的掺杂量分别为5at％和0．5at％时，测得τs=9．65ms．这种荧光寿命长、发射截面大和线宽窄的特性有利于微型、可集成化和大功率激光输出的实现．

Nd：YbVO4晶体的拉曼光谱和荧光光谱研究

用群论的方法计算了Nd：YbVO4晶体的拉曼活性振动模数目，在室温下测得了其极化拉曼谱线，并指认了在不同几何配置下，各振动模式所对应的频率。同时，测得了室温下晶体的吸收谱，得到了中心波长为808am吸收峰的半高宽为12nm，并在J-O理论的基础上计算了晶体的光学参数，其三个晶场参数分别为Ω2=6．88945×10^-20cm^2。Ω4=4．13394×10^-20cm^2、Ω6=4．54503×10^-20cm^2，并由此得到^4F3／2能级的荧光寿命为178．69炉，1062nm处的荧光分支比为48．85％，积分发射截面为2．786710^-18cm^2。分别在808nm、940nm激发下测得晶体室温发射谱，观察到了Nd→Yb以及Nd←Yb间的能量传递现象。

LiGaO_2衬底上ZnO外延膜的结构与光学特性

采用磁控溅射法在(001)、(100)及(010)LiGaO2衬底上制备了ZnO薄膜,通过X射线衍射(XRD)、原子力显微镜(AFM)、透过光谱以及光致发光谱(PL)对薄膜的结构、形貌及光学性质进行了表征。结果表明LiGaO2衬底不同晶面上制备的ZnO薄膜具有不同的择优取向,在(001)(、100)及(010)LiGaO2上分别获得了[0001][、1100]及[1120]取向的ZnO薄膜;不同取向的ZnO薄膜表面形貌差异较大;薄膜在可见光波段具有较高的透过率;在ZnO薄膜的光致发光谱中只观察到了位于378 nm的紫外发射峰,而深能级发射几乎观察不到,(1100)取向的薄膜紫外发射峰强度最大,半高宽也最小,薄膜光致发光性质的差异主要和晶粒尺寸有关。

Fabrication and spectral properties of Nd3+-doped yttrium lanthanum oxide transparent ceramics

Transparent 1 at% Nd3+:Y1.9La0.1O3 ceramics were fabricated with nanopowders prepared by carbonate coprecipitation method. The powder compacts were sintered in H-2 atmosphere at 1550 degrees C for 30 h. The Nd3+:Y1.9La0.1O3 ceramics display uniform grains of about 50 mu m and high transparency. The highest transmittance of the ceramics reaches 67%. The strongest absorption peak is in the wavelength of 820 nm with absorption cross section of 2.48 x 10(-20) cm(2). The absorption is still high at LD wavelength 806 nm with absorption cross section of 1.78 x 10(-20) cm(2) and broad full width at half maximum (FWHM) of about 6.3 nm. The strongest emission peak was centered at 1078 nm with large stimulated emission cross section of 9.63 x 10(-20) cm(2) and broad FWHM of about 7.8 nm. The broad absorption and emission bandwidth of Nd3+:y(1.9)La(0.1)O(3) transparent ceramics are favorable to achieve the miniaturized LD pumping apparatus and ultrashort modelocked pulse laser output, respectively. (c) 2007 Elsevier B.V. All rights reserved.

Tm:Y_2SiO_5晶体的生长和光谱性质研究

采用中频感应提拉法生长了高质量的Tm:Y2SiO5(Tm:YSO)晶体,测定了晶体的晶格常数和分凝系数.运用劳厄照相法确定了单斜晶系Tm:YSO晶体的三个偏振轴〈010〉,D1和D2,在室温下测量了三个偏振轴方向的吸收光谱、荧光光谱和荧光寿命,计算了晶体吸收峰的吸收线宽和吸收截面.研究发现,相对于其他两个偏振轴方向,D1方向在790 nm处出现较强的吸收峰,同时在2μm附近出现了一定强度的发射峰,D1方向的吸收截面较大,荧光寿命较长.Tm:YSO晶体适用于AlGaAs二极管抽运固体激光器,在2μm波段固体激光器的应用上将有很大的发展潜力.

Yb:Y2O2S的粉体制备和光谱性质

通过助熔剂固相反应法制备了5%Yb掺杂的硫氧化钇(Y2O2S)粉体。通过对其漫反射光谱和荧光光谱的测量，估算得Yb3+离子在Y2O2S晶格中的晶场分裂。由光谱数据计算得Yb3+离子的2F7/2能级在Y2O2S中的分裂值为709cm-1，适合于Yb3+离子的准三能级的激光运转。由5％Yb：Y2O2S的发射光谱拟合得出其峰位，峰高及峰宽。为了比较，相关的5％Yb：YAG的数据也被给出。

Judd-Oflet analysis of spectrum and laser performance of Ho:YAP crystal end-pumped by 1.91-mu m Tm:YLF laser

The Ho:YAP crystal is grown by the Czochralski technique. The room-temperature polarized absorption spectra of Ho:YAP crystal was measured on a c-cut sample with 1 at% holmium. According to the obtained Judd-Ofelt intensity parameters Omega(2) = 1.42 x 10(-20) cm(2), Omega(4) = 2.92 x 10(-20) cm(2), and Omega(6) = 1.71 x 10(-20) cm(2), this paper calculated the fluorescence lifetime to be 6 ms for I-5(7) -> I-5(8) transition, and the integrated emission cross section to be 2.24 x 10(-18) cm(2). It investigates the room-temperature Ho:YAP laser end-pumped by a 1.91-mu m Tm:YLF laser. The maximum output power was 4.1 W when the incident 1.91-mu m pump power was 14.4W. The slope efficiency is 40.8%, corresponding to an optical-to-optical conversion efficiency of 28.4%. The Ho:YAP output wavelength was centred at 2118 nm with full width at half maximum of about 0.8 nm.

Structure and UV emission of nanocrystal ZnO films by thermal oxidation of ZnS films

ZnO films prepared by the thermal oxidation of the ZnS films through thermal evaporation are reported. The as-deposited ZnS films have transformed to ZnO films completely at 400 degrees C. The 400-700 degrees C annealed films with a preferential c-axis (002) orientation have a hexagonal wurtzite structure. The band gap of ZnO films shifts towards longer wavelength with the increase of the annealing temperature. The relationship between the band gap energy of ZnO films and the grain size is discussed. The shift of the band gap energy can be ascribed to the quantum confinement effect in nanocrystal ZnO films. The photoluminescence spectra of ZnO films show a dominant ultraviolet emission and no deep level or trap state defect emission in the green region. It confirms the absence of interstitial zinc or oxygen vacancies in ZnO films. These results indicate that ZnO film prepared by this simple thermal oxidation method is a promising candidate for optoelectronic devices and UV laser. (c) 2005 Elsevier BN. All rights reserved.

The effects of oxygen partial pressure on the optical absorption edge and the UV emission energy of ZnO films

The optical absorption edge and ultraviolet (UV) emission energy of ZnO films deposited by direct current (DC) reactive magnetron sputtering at room temperature have been investigated. With the oxygen ratio increasing, the structure of films changes from zinc and zinc oxide coexisting phase to single-phase ZnO and finally to the highly (002) orientation. Both the grain size and the stress of ZnO film vary with the oxygen partial pressure. Upon increasing the oxygen partial pressure in the growing ambient, the visible emission in the room-temperature photoluminescence spectra was suppressed without sacrificing the band-edge emission intensity in the ultraviolet region. The peaks of photoluminescence spectra were located at 3.06---3.15 eV. From optical transmittance spectra of ZnO films, the optical band gap edge was observed to shift towards shorter wavelength with the increase of oxygen partial pressure.