A 20.1 W Solid-State Laser Pumped by 887 nm with High Efficiency and TEM00 Mode

High efficiency, TEM00 mode, high repetition rate laser pumped by 887 nm is reported. 20.1 W output laser emitting at 1064 nm is achieved in a 0.3 at % Nd-doped Nd:YVO4, which absorbs pumping light of 30.7 W at 887 nm. The opto-optic efficiency and the slope efficiency are 65.5 and 88.5%, respectively. The stable Q-switching operation worked well at 100 kHz and the beam quality is near diffraction-limit with M-2 factor measured as M-2 approximate to 1.2. And the pulse waveform is analyzed in this paper.

Low heat and high efficiency Nd:GdVO4 laser pumped by 913 nm

A Nd:GdVO4 crystal is pumped directly into its emitting level at 913 nm for the first time to the best of our knowledge. 3.35 W output laser emitting at 1063 nm is achieved in a 1.1 at.% Nd-doped Nd:GdVO4. The crystal absorbs pumping light of 4.30 W at 913 nm and produces a very low quantity of heat with the opto-optic conversion efficiency of 77.2%. The average slope efficiency is 81.2% from 0.21 W, at the threshold, to 4.30 W of absorbed pump power. Because of the very weakly thermal effect, the near-diffraction-limit beam is easily obtained with beam quality factor of M-2 approximate to 1.1.

Negative lateral shift of a light beam transmitted through a dielectric slab and interaction of boundary effects

It is found that when a light beam travels through a slab of optically denser dielectric medium in air, the lateral shift of the transmitted beam can be negative. This is a novel phenomenon that is reversed in comparison with the geometrical optic prediction according to Snell's law of refraction. A Gaussian-shaped beam is analyzed in the paraxial approximation, and a comparison with numerical simulations is made. Finally, an explanation for the negativity of the lateral shift is suggested, in terms of the interaction of boundary effects of the slab's two interfaces with air.

Research on micro-optical lenses fabrication technology

We present a detail investigation on the development of a series of gradient index (GRIN) optical glass microlens and polymer microlens and microlens arrays in our laboratory in recent years. The special glass material GRIN lenses have been fabricated mainly by using ion-exchange technology, which are applied to construct micro-optic devices and other applications. On one hand, we demonstrated the light propagation and imaging properties of GRIN lenses and the results analyzed. On the other hand, we have explored a drop-on-demand ink-jet printing method to produce microlens array using nano-scale polymer droplets involved with a uniform ultraviolet light and heat solidifying process. The experimental setup for manufacturing polymer microlens array and the performance of refractive microlens elements are also given in this paper. (C) 2006 Elsevier GmbH. All rights reserved.

ICP-OES的悬浮进样方式及ICP-MS的碰撞/反应池技术的研究与应用

本论文分为两部分：1. 综述部分（第一章和第二章），评述了悬浮进样方式在电感耦合等离子体发射光谱法（ICP-OES）中的研究与应用；电感耦合等离子体质谱（ICP-MS）中碰撞/反应池技术研究的新进展。2. 实验部分（第三章至第九章），内容包括针对不同性质的样品悬浮液选择适当的稳定剂和悬浮雾化ICP-OES的校准方法研究；以混合碰撞/反应气体解决难度较大的高纯氧化钕中稀土杂质测定的干扰问题；以及浊点萃取-石墨炉原子吸收法测定环境样品中痕量镉、氢化物发生-原子荧光光谱法测定铅基合金中砷和植物样品中锗等实用性强的分析方法研究。 ICP的传统进样方式是将样品转化成水溶液形式，以溶液方式进样。然而大多数样品是以固态形式存在，许多样品相当难溶或难熔。采用直接固体进样方法对这些样品进行分析，是分析工作者追求的目标之一。悬浮液进样是一种固体直接进样方法，除了具有其它固体进样技术的优点外，其最大优点是可以像溶液雾化一样用标准水溶液校准。本研究针对实际分析工作中遇到的具体样品，对悬浮进样ICP-OES技术进行了比较深入的研究，成功解决了样品处理繁琐和样品难以处理等困难。对特殊地质样品和激光晶体材料（Nd:YAG）的悬浮进样分析进行了探索。主要工作为：①建立分析地质样品中主量和微量元素的方法，标准水溶液可以成功地用于校准。优点是可以同时对地质样品中的Si和其它元素进行分析，避免了传统分析时需分别处理样品的麻烦。②探索了分析铌钽矿中铌和钽的应用。由于铌和钽具有强抗化学腐蚀性，所以溶液进样分析时样品处理过程复杂。结果表明，以标准水溶液校准时，只要样品研磨时间延长至5 h，即可获得悬浮进样的满意的回收率。③研究了分析掺钕钇铝石榴石(Nd:YAG)中钕掺杂量的可行性。研究表明，加入适量聚丙烯酸作分散剂并调节pH为6，可以得到稳定悬浮液；以通用标准加入法（GSAM）校准可以得到满意的结果。 我国的稀土资源占世界的80％以上，高纯稀土氧化物是高科技领域中的重要材料。碰撞/反应池技术是目前四极杆ICP-MS消除干扰的先进技术，可以选择性地减少某些基体干扰，使背景和检测限得到显著的改进。本实验选择氧化钕（有7个同位素）作为研究对象，采用碰撞/反应池技术重点解决四极杆ICP-MS方法对高纯Nd2O3中稀土杂质进行测定时，基体Nd对Tb、Dy和Ho严重的氧化物或氢氧化物干扰难题。研究结果如下：①在四极杆高分辨率模式下，可以消除Nd对Pr的相邻峰的拖尾干扰；②采用碰撞/反应池技术，设计了10% O2-10% Ar-80% He混合气体作为碰撞/反应气，将Tb、Dy和Ho分别转化为相应的氧化物离子进行测定，成功地消除了基体Nd对Ho的干扰；Nd对Tb和Dy造成干扰的表观浓度显著降低。本方法可直接测定纯度为6N的高纯Nd2O3中的Ho；对纯度为6N的高纯Nd2O3中的Tb和Dy进行扣除，可以分析纯度达5N的高纯Nd2O3中的Tb和Dy。与文献报道的其它消除基体Nd干扰的方法相比较，此方法能够对纯度更高的Nd2O3进行直接分析，且操作简便。此方法也可进一步拓宽，有望解决其它轻稀土氧化物对中重稀土检测的质谱干扰问题。 论文的7～9章的工作包括：浊点萃取-GFAAS测定环境样品中痕量镉、HG-AFS分析铅基合金中砷和植物样品中锗的研究。针对实际分析工作中的具体困难，以上工作分别解决了分析元素含量低、测定干扰严重及样品处理的问题，建立了实用性强、准确度高的分析方法，具有实际应用价值。

光导纤维pH传感器的光化学pH敏感高分子膜及pH响应性能

pH指示剂在高分子载体上的固定化研究是应光导纤维pH传感器的发展要求而发展起来的新的研究领域。pH指示剂在高分子固态载体上的固定直接决定着光导纤维pH传感器的灵敏度、响应时间、寿命等性能。迄今，吸附、包埋和化学键合三利，固定方法已得到广泛应用。吸附法与包埋法简单易行，但因指示剂易于逸出而无法保证试剂相的使用稳定性及寿命；化学键合法目前仅限于对含氨基等高反应活性基团的指示剂固定。另外，这三种固定技术均存在试剂相与分析对象呈现固／液两相分离的问题，它严重制约了传感器响应性能，成为pH指示剂固定技术发展的“瓶颈”。改善、发展与寻找新的指示剂／载体固定配对体系已成为本领域的研究焦点。本论文针对上述问题，开拓与发展了一系列指示剂固定于固态高分子载体上的新体系。（一）首先开拓与发展了酚红／交联聚乙烯醇与邻甲酚红／交联聚乙烯醇固定对的新体系。在酸性条件下，以甲醛做交联剂，通过在玻璃板上倾涂聚乙烯醇甲醛的凝胶溶液制备了高亲水性的交联聚乙烯醇载体膜；然后采用接枝共聚反应将丙烯酞胺单体与通过酸碱反应接枝有酚红或邻甲酚红的丙烯酞胺混合物接枝固定到交联聚乙烯醇薄膜上，首次将不含氨基的酚红、邻甲酚红在高亲水性的聚乙烯醇载体上固定。利用紫外可见光光谱仪测试了其响应性能。结果表明，固定化指示剂的光谱行为与其相应的水溶液的光谱行为不一致，这可能是固定化过程中新的化学键生成以及载体与指示剂之间的相互作用如氢键的作用等引起的。这也导致了其pH响应范围与相应指示剂水溶液的响应范围的差异。固定酚红交联聚乙烯醇pH敏感膜的pH响应范围为pH=6.72～8.49；固定邻甲酚红交联聚乙烯醇pH敏感膜的两个响应范围分别为［H~+］=0.1mol／L～5mol／L和pH7.97～12.26。这种方式制备的这两种pH敏感薄膜均表现出优异的可重复使用性、可逆性、稳定性及易于制备的特点。更突出的优点在于，与以聚丙烯酰胺为基质直接固定酚红的薄膜（PAM-PR）相比，这种固定技术制备的敏感膜，当其与分析剂溶液接触时，其接枝于表面的水溶性高分子溶解，呈现“液态”，在固态基质表面形成一“液膜”层，从而消除了试剂相与分析剂之间的相界面，克服了指示剂固定化技术中的“瓶颈”问题，大幅度地提高了其响应速度与灵敏度，使响应时间从PAM-PR的数十分钟降至30秒以下。（二）开拓了刚果红醋酸纤维素包埋对的pH敏感膜（CCM）及刚果红／环氧氯丙烷交联聚乙烯醇（PECM）和甲醛交联聚乙烯醇（PFCM）的三种pH敏感膜新体系，测试并比较了三种膜的响应性能。结果表明，固定化刚果红的光谱性质和响应范围与刚果红水溶液不一致，而且用不同载体固定的刚果红的光谱特征与响应范围也各不相同。CCM的响应范围为pH＝2.5～4.5，PECM的响应范围在［H~+］=2mol/L～pH＝6.8之间，PFCM响应范围为pH＝2.90～5.48。这也可能是固定化过程中的氢键效应、空间位阻、指示剂与载体间发生的化学反应不同及载体本身结构的差异等引起的。这三种膜也具有良好的重现性、可逆性及响应迅速（平均响应时间低于25秒）的特点。另外发现醋酸纤维素包埋刚果红的敏感膜具有特殊的稳定性。对这种特殊的稳定性原因的分析表明选择合适尺寸分子的指示剂与载体配对将可能克服包埋技术中指示剂逸出的缺点。（三）对制备的pH敏感膜及对应的水溶液的pH线性响应范围给出了相应的线性回归方程（R＞98.2）。结果表明这些敏感膜对响应范围内的pH均具有良好的线性响应关系。这些结果与思想不仅丰富了光导pH传感器的试剂相内容，也为后续工作提供了一些有益的借鉴。

AN ALUMINUM OXYNITRIDE FILM

We report on an aluminum oxynitride (AlON) film which was successfully made using the reactiver r.f. sputtering method in an N2-O2 mixture. The fabrication process, atomic components, breakdown field and refractive index of the AlON film are shown in detail. The AlON film is a new polyfilm combining the good properties of Al2O3 and AlN, and it is very interesting with regard to optoelectronic devices and integrated optic circuits.

Reflectance-difference spectroscopy study of the Fermi-level position of low-temperature-grown GaAs

The results of a reflectance-difference spectroscopy study of GaAs grown on (100) GaAs substrates by low-temperature molecular-beam epitaxy (LT-GaAs) are presented. In-plane optical anisotropy resonances which come from the linear electro-optic effect produced by the surface electric field are observed. The RDS line shape of the resonances clearly shows that the depletion region of LT-GaAs is indeed extremely narrow (much less than 200 Angstrom). The surface potential is obtained from the RDS resonance amplitude without the knowledge of space-charge density. The change of the surface potential with post-growth annealing temperatures reflects a complicated movement of the Fermi level in LT-GaAs. The Fermi level still moves for samples annealed at above 600 degrees C, instead of being pinned to the As precipitates. This behavior can be explained by the dynamic properties of defects in the annealing process.

An Improved Driving Circuit for Thermo-Optical Switch to Improve the Reliability of Thermo-Optical Switch Matrix

The influence of the heaters on the reliability of the thermo-optic (TO) switch matrix is analyzed and an improved driving circuit based on the analyzed results is designed and fabricated. The circuit can improve the reliability of the switch matrix device from 78.87% to 97.04% for a 4×4 optical switch device with a simplified tree structure. The simulation and experimental results show the circuit can provide suitable driving current for TO switch matrix.

A 1.3μm Low-Threshold Edge-Emitting Laser with AlInAs-Oxide Confinement Layers

A 1.3μm low-threshold edge-emitting AlGaInAs multiple-quantum-well(MQW) laser with AlInAs-oxide confinement layers is fabricated.The Al-contained waveguide layers upper and low the active layers are oxidized as current-confined layers using wet-oxidation technique.This structure provides excellent current and optical confinement,resulting in 12.9mA of a low continuous wave threshold current and 0.47W/A of a high slope efficiency of per facet at room temperature for a 5-μm-wide current aperture.Compared with the ridge waveguide laser with the same-width ridge,the threshold current of the AlInAs-oxide confinement laser has decreased by 31.7% and the slope efficiency has increased a little.Both low threshold and high slope efficiency indicate that lateral current confinement can be realized by oxidizing AlInAs waveguide layers.The full width of half maximum angles of the Al-InAs-oxide confinement laser are 21.6° for the horizontal and 36.1° for the vertical,which demonstrate the ability of the AlInAs oxide in preventing the optical field from spreading laterally.

Thermally Stable Guest-Host Polyetherketone Poled Polymer for Electro-Optical Applications

The high glass transition temperature polymer polyetherketone doped with disperse red 13 (DR13/PEK-c) has been prepared by the spin-coating method. Through in situ second-harmonic generation, the corona poling temperature was optimized by measuring the temperature dependence of the in situ second-harmonic generation signal intensity under the poling electric field. The linear electro-optic coefficients of the poled polymer films have been determined at 632.8 nm by using a simple interferometric technique. The polymer system was measured after 13 000 h, and found that it remained at 80% of its initial value.

Temperature Dependence of Characteristics for Multimode Interference Based 3-dB Coupler in SOI

The temperature dependence of characteristics for multimode interference (MMI) based 3-dB coupler in silicon-on-insulator is analyzed, which originates from the relatively high thermo-optic coefficient of silicon. For restricted interference 3-dB MMI coupler, the output power uniformity is ideally 0 at room temperature and becomes 0. 32 dB when temperature rises up to 550 K. For symmetric interference 3-dB MMI coupler, the power uniformity keeps ideally 0 due to its intrinsic symmetric interference mechanism. With the temperature rising, the excess loss of the both devices increases. The performance deterioration due to temperature variety is more obvious to restricted interference MMI 3-dB coupler, comparing with that of symmetric interference MMI 3-dB coupler.