Simulation of polarization effects in AlGaN/GaN heterojunction

A method for introducing polarization effects in the simulation of GaN-based heterojunction devices is proposed. A delta doping layer is inserted at the interface of heterojunction and the ionized donors or acceptors act as polarization induced fixed charges. Thus polarization effects can be taken into account in a traditional device simulator. Ga-face and N-face single AlGaN/GaN heterostructures are simulated, and the simulation results show that carrier confinement takes place only in the former structure while not in the latter one. The sheet density of free electrons at the interface of Ga-face AlGaN/GaN increases with the Al composition and the thickness of AlGaN. The consistence of simulation results with the experiments and calculations reported elsewhere shows that this method can effectively introduce polarization effects in the simulation of GaN-based heterojunction devices.

Effect of spontaneous and piezoelectric polarization on intersubband transition in AlxGa1-xN-GaN quantum well

A self-consistent solution of conduction band profile and subband energies for AlxGa1-xN-GaN quantum well is presented by solving the Schrodinger and Poisson equations. A new method is introduced to deal with the accumulation of the immobile charges at the AlxGa1-xN-GaN interface caused by spontaneous and piezoelectric polarization in the process of solving the Poisson equation. The effect of spontaneous and piezoelectric polarization is taken into account in the calculation. It also includes the effect of exchange-correlation to the one electron potential on the Coulomb interaction. Our analysis is based on the one electron effective-mass approximation and charge conservation condition. Based on this model, the electron wave functions and the conduction band structure are derived. We calculate the intersubband transition wavelength lambda(21) for different Al molar fraction of barrier and thickness of well. The calculated result can fit to the experimental data well. The dependence of the absorption coefficient a on the well width and the doping density is also investigated theoretically. (C) 2004 American Vacuum Society.

Enhanced Pockels effect in GaN/AlxGa1-xN superlattice measured by polarization-maintaining fiber Mach-Zehnder interferometer

Six-period 4 nm GaN/10 nm AlxGa1-xN superlattices with different Al mole fractions x were prepared on (0001) sapphire substrates by low-temperature metal-organic chemical vapor deposition. The linear electro-optic (Pockels) effect was studied by a polarization-maintaining fiber-optical Mach-Zehnder interferometer system with an incident light wavelength of 1.55 mu m. The measured electro-optic coefficients, gamma(13)=5.60 +/- 0.18 pm/V, gamma(33)=19.24 +/- 1.21 pm/V (for sample 1, x=0.3), and gamma(13)=3.09 +/- 0.48 pm/V, gamma(33)=8.94 +/- 0.36 pm/V (for sample 2, x=0.1), respectively, are about ten times larger than those of GaN bulk material. The enhancement effect in GaN/AlxGa1-xN superlattice can be attributed to the large built-in field at the interfaces, depending on the mole fraction of Al. (C) 2007 American Institute of Physics.

Electro-optic coefficients of Si0.75Ge0.25/Si/Si0.5Ge0.5 asymmetric superlattice measured by polarization-maintaining fiber-optic Mach-Zehnder interferometer

Ten-period 5.5 nm Si0.75Ge0.25/10.3 nm Si/2.5 nm Si0.5Ge0.5 trilayer asymmetric superlattice was prepared on Si (001) substrate by ultrahigh vacuum chemical vapor deposition at 500 degrees C. The stability of Mach-Zehnder interferometer was improved by utilizing polarization-maintaining fibers. According to the electro-optic responses of the superlattice with the light polarization along [110] and [-110], respectively, both electro-optic coefficients gamma(13) and gamma(63) of such asymmetric superlattice were measured. gamma(13) and gamma(63) are 2.4x10(-11) and 1.3x10(-11) cm/V, respectively, with the incident light wavelength at 1.55 mu m. (c) 2006 American Institute of Physics.

Spectral dependence of spin photocurrent and current-induced spin polarization in an InGaAs/InAlAs two-dimensional electron gas

The converse effects of spin photocurrent and current induced spin polarization are experimentally demonstrated in a two-dimensional electron gas system with Rashba spin splitting. Their consistency with the strength of the Rashba coupling as measured for the same system from beating of the Shubnikov-de Haas oscillations reveals a unified picture for the spin photocurrent, current-induced spin-polarization, and spin-orbit coupling. In addition, the observed spectral inversion of the spin photocurrent indicates a system with dominating structure inversion asymmetry.

Polarization insensitive gain medium with hybrid strained quantum well

A polarization insensitive gain medium for optical amplifiers has been fabricated. The active layer is a structure with alternate tensile and compressive strain quantum wells. The waveguide is made into a taper with angled facets. In the experiment we found that the structure can suppress the lasing and decrease the polarization sensitivity. The gain imbalance between transverse electric and transverse magnetic gains is small, and 0.1 dB is obtained at a driving current of 100 mA. The full-width at half-maximum of amplified spontaneous emission is 40 nm within large current. (C) 2002 Elsevier Science Ltd. All rights reserved.

Impact of polarization on quasi-two-dimensional exciton and barrier-width dependence of the exciton associated transition in wurtzite III-V nitride quantum wells

Excitonic states in AlxGa1-xN/GaN quantum wells (QWs) are studied within the framework of effective-mass theory. Spontaneous and piezoelectric polarizations are included and their impact on the excitonic states and optical properties are studied. We witnessed a significant blue shift in transition energy when the barrier width decreases and we attributed this to the redistribution of the built-in electric field between well layers and barrier layers. For the exciton the binding energies, we found in narrow QWs that there exists a critical value for barrier width, which demarcates the borderline for quantum confinement effect and the quantum confined Stark effect. Exciton and free carrier radiative lifetimes are estimated by simple argumentation. The calculated results suggest that there are efficient non-radiative mechanisms in narrow barrier QWs. (C) 2002 Elsevier Science Ltd. All rights reserved.

Effects of piezoelectricity and spontaneous polarization on electronic and optical properties of wurtzite III-V nitride quantum wells

A theoretical model accounting for the macropolarization effects in wurtzite III-V nitrides quantum wells (QWs) is presented. Energy dispersions and exciton binding energies are calculated within the framework of effective-mass theory and variational approach, respectively. Exciton-associated transitions (EATs) are studied in detail. An energy redshift as high as 450 meV is obtained in Al0.25GaN0.75/GaN QWs. Also, the abrupt reduction of optical momentum matrix elements is derived as a consequence of quantum-confined Stark effects. EAT energies are compared with recent photoluminescence (PL) experiments and numerical coherence is achieved. We propose that it is the EAT energy, instead of the conduction-valence-interband transition energy that is comparable with the PL energy. To restore the reduced transition rate, we apply an external electric field. Theoretical calculations show that with the presence of the external electric field the optical matrix elements for EAT increase 20 times. (C) 2001 American Institute of Physics.

Circular polarization of excitonic luminescence in CdTe quantum wells with excess electrons of different densities

The circular polarization of excitonic luminescence is studied in CdTe/Cd1-xMgxTe quantum wells with excess electrons of low density in an external magnetic field. It is observed that the circular polarization of X and X- emissions has opposite signs and is influenced by the excess electron density. If the electron density is relatively high so that the emission intensity of the negatively charged excitons X- is much stronger than that of the neutral excitons X, a stronger circular polarization degree of both X and X- emissions is observed. We find that the circular polarization of both X- and X emissions is caused by the spin polarization of the excess electrons due to the electron-spin-dependent nature of the formation of X-. If the electron density is relatively low and the emission intensity of X- is comparable to that of X, the circular polarization degree of X and X- emissions is considerably smaller. This fact is interpreted as due to a depolarization of the excess electron spins, which is induced by the spin relaxation of X-.

Pressure dependence of Mn2+ fluorescence in ZnS : Mn2+ nanoparticles

The photoluminescence of Mn2+ in ZnS:Mn2+ nanoparticles with an average size of 4.5 nm has been measured under hydrostatic pressure from 0 to 6 GPa. The emission position is red-shifted at a rate of -33.3+/-0.6meV/GPa, which is in good agreement with the calculated value of -30.4meV/GPa using the crystal field theory. (C) 2000 Elsevier Science B.V. All rights reserved.

Energy structure and fluorescence of Eu2+ in ZnS : Eu nanoparticles

Eu2+-doped ZnS nanoparticles with an average size of around 3 nm were prepared, and an emission band around 530 nm was observed. By heating in air at 150 degrees C, this emission decreased, while the typical sharp line emission of Eu3+ increased. This suggests that the emission around 530 nm is from intraion transition of Eu2+: In bulk ZnS:Eu2+, no intraion transition of Eu2+ was observed because the excited states of Eu2+ are degenerate with the continuum of the ZnS conduction band. We show that the band gap in ZnS:Eu2+ nanoparticles opens up due to quantum confinement, such that the conduction band of ZnS is higher than the first excited state of Eu2+, thus enabling the intraion transition of Eu2+ to occur.

Structure, fluorescence and stability of CdS nanoparticles prepared in air

CdS nanoparticies were prepared in air and their stability by air annealing was studied. A small change in crystal structure and particle size was observed by air annealing, but a rapid reduction in fluorescence was found. Through investigation, it is revealed that it is the surface change or reconstruction rather than the variation of the size or structure that decreases the fluorescence. The emission of the particles consists with two peaks which are dependent on the excitation energy. The two peaks are considered to be arisen from "two" different sizes of nanoparticles and may be explained in terms of selectively excited photoluminescence. Finally we discuss why the discrete state of nanoparticles are able to be resolved in the photoluminescence excitation spectrum, but could not be differentiated in the absorption spectrum.

Formation, structure and fluorescence of CdS clusters in a mesoporous zeolite

CdS clusters are formed in the pores of a mesoporous zeolite in which the size of the clusters may be adjusted. The size of the clusters increases as the CdS loading is increased. X-ray diffraction investigation shows that the lattice constants of the clusters contract upon increasing size. This contraction is attributed to an increase of the static pressure exercised by the zeolite framework as the clusters grow bigger. Both the excitonic and trapped emission bands are detected and become more intensive upon decreasing size. Three absorption bands appear in the photoluminescence excitation (PLE) spectra and they shift to the blue as cluster size decreases. Based on the effective-mass approximation, the three bands are assigned to the 1S-1S, 1S-1P and 1S-1D transitions, respectively. The size-dependence of the PLE spectra can also be explained. (C) 1997 Elsevier Science Ltd.

Polarization-Independent Micro-Ring Resonator on Silicon-on-Insulator

Polarization-independent laterally-coupled micro-ring resonator has been designed and demonstrated. The origin of the polarization-sensitivity of the photonic wire waveguide (PWW) was analyzed. A polarization-insensitive PWW structure was designed and a polarization-insensitive MRR based on this PWW structure was designed by finite difference time-domain method and was fabricated on an 8-inch silicon-on-insulator wafer. The offset between the resonant wavelengths of the quasi-TE mode and the quasi-TM mode is smaller than 0.15 nm. The FSR is about 17 nm, extinction ratio about 10 dB and Q about 620.

Mode analysis of photonic crystal polarization beam splitter and its application in integrated circuits design - art. no. 698437

In this work, the guided modes of a photonic crystal polarization beam splitter (PC-PBS) are studied. We demonstrate that the transmission of a low-loss photonic crystal 120 degrees waveguide bend integrated with the PBS will be influenced if the PBS is multi-moded. We propose a single-moded PC-PBS structure by introducing deformed structures, and it shows twice the enhancement of the transmission. This device with remarkable improvement of performance is promising in the use of photonic crystal integrated circuits design.