Analysis of equilateral triangle semiconductor microlasers with rough sidewalls

The mode frequencies and quality factors are calculated for the equilateral triangle semiconductor microlasers with sinusoidal and random Gaussian sidewalls. The results show that the modes can still have high Q-factors.

Cooperative spontaneous emission of excitons in the semiconductor microcavity

We have studied the spontaneous emission of polarized excitons in the GaInP/AlGaInP VCSEL from 30K to room temperature. It is observed that the spontaneous emission peak enters and leaves the resonant regime. At the resonant regime, the emission intensities of the perpendicular and horizontal polarized exciton are enhanced at different ratio to those in non-resonant regime. These experiment results are explained through the dressed exciton theory of the semiconductor microcavity device. From this theory, the intensity enhancement and the polarization dependence are understood as cooperative emission and the microcavity anisotropy.

High power continuous-wave operation of self-organized In(Ga)As/GaAs quantum dot lasers

Quantum dot (QD) lasers are expected to have superior properties over conventional quantum well lasers due to a delta-function like density of states resulting from three dimensional quantum confinements. QD lasers can only be realized till significant improvements in uniformity of QDs with free of defects and increasing QD density as well in recent years. In this paper, we first briefly give a review on the techniques for preparing QDs, and emphasis on strain induced self-organized quantum dot growth. Secondly, self-organized In(Ga)As/GaAs, InAlAs/GaAlAs and InAs/InAlAs Qds grown on both GaAs and InP substrates with different orientations by using MBE and the Stranski-Krastanow (SK) growth mode at our labs are presented. Under optimizing the growth conditions such as growth temperature, V/III ratio, the amount of InAs, InxGa1-xAs, InxAl1-xAs coverage, the composition x etc., controlling the thickness of the strained layers, for example, just slightly larger than the critical thickness and choosing the substrate orientation or patterned substrates as well, the sheet density of ODs can reach as high as 10(11) cm(-2), and the dot size distribution is controlled to be less than 10% (see Fig. 1). Those are very important to obtain the lower threshold current density (J(th)) of the QD Laser. How to improve the dot lateral ordering and the dot vertical alignment for realizing lasing from the ground states of the QDs and further reducing the Jth Of the QD lasers are also described in detail. Thirdly based on the optimization of the band engineering design for QD laser and the structure geometry and growth conditions of QDs, a 1W continuous-wave (cw) laser operation of a single composite sheet or vertically coupled In(Ga)As quantum dots in a GaAs matrix (see Fig. 2) and a larger than 10W semiconductor laser module consisted nineteen QD laser diodes are demonstrated. The lifetime of the QD laser with an emitting wavelength around 960nm and 0.613W cw operation at room temperature is over than 3000 hrs, at this point the output power was only reduced to 0.83db. This is the best result as we know at moment. Finally the future trends and perspectives of the QD laser are also discussed.

Self-assembled quantum dots, wires and quantum-dot lasers

Molecular beam epitaxy-grown self-assembled In(Ga)As/GaAs and InAs/InAlAs/InP quantum dots (QDs) and quantum wires (QWRs) have been studied. By adjusting growth conditions, surprising alignment. preferential elongation, and pronounced sequential coalescence of dots and wires under specific condition are realized. The lateral ordering of QDs and the vertical anti-correlation of QWRs are theoretically discussed. Room-temperature (RT) continuous-wave (CW) lasing at the wavelength of 960 nm with output power of 3.6 W from both uncoated facets is achieved fi-om vertical coupled InAs/GaAs QDs ensemble. The RT threshold current density is 218 A/cm(2). A RT CW output power of 0.6 W/facet ensures at least 3570 h lasing (only drops 0.83 dB). (C) 2001 Elsevier Science B.V, All rights reserved.

Surface Emitting Distributed Feedback Quantum Cascade Laser around 8.3 mu m

We demonstrate surface emitting distributed feedback quantum cascade lasers emitting at wavelengths from 8.1 mu m at 90 K to 8.4 mu m at 210 K. The second-order metalized grating is carefully designed using a modified coupled-mode theory and fabricated by contact lithography. The devices show single mode behavior with a side mode suppression ratio above 18 dB at all working temperatures. At 90 K, the device emits an optical power of 101 mW from the surface and 199 mW from the edge. In addition, a double-lobe far-field pattern with a separation of 2.2 degrees is obtained in the direction along the waveguide.

40 Gbits/s all-optical clock recovery for degraded signals using an amplified feedback laser

All-optical clock recovery for the return-to-zero modulation format is demonstrated experimentally at 40 Gbits/s by using an amplified feedback laser. A 40 GHz optical clock with a root-mean-square (rms) timing jitter of 130 fs and a carrier-to-noise ratio of 42 dB is obtained. Also, a 40 GHz optical clock with timing jitter of 137 fs is directly recovered from pseudo-non-return-to-zero signals degraded by polarization-mode dispersion (PMD). No preprocessing stage to enhance the clock tone is used. The rms timing jitter of the recovered clock is investigated for different values of input power and for varying amounts of waveform distortion due to PMD.

Blue amplified spontaneous emission from 2, 1, 3-benzothiadiazole attached polyfluorene semiconductor polymer with high photoluminescence efficiency

The amplified spontaneous emission properties of a 2, 1, 3-benzothiadiazole attached polyfluorene semiconductor polymer were studied. The conjugated polymer shows a high photoluminescence quantum efficiency of 67% and emits a narrowed blue emissive spectrum with a full width at half-maximum of 3.6 nm when optically pumped, indicating better lasing action. A threshold energy as low as 0.22 mJ pulse(-1) cm(-2), a net gain of 40.54 cm(-1) and a loss of 7.8 cm(-1) were obtained, demonstrating that this conjugated polymer could be a promising candidate as the gain medium for the fabrication of blue polymer lasers.

Stimulated emission from distyrylbenzene derivative crystals grown by vapor

Narrowed spectra at 452 nm from a thin platelike crystal of distyrylbenzene derivative, 2,5-diphenyl-1,4-distyrylbenzene with two trans double bonds (trans-DPDSB) grown by vapor deposition, are observed. The trans-DPDSB crystal is irradiated by the third harmonic (355 nm) of a Nd:YAG laser. The FWHM of the narrowed spectra can reach 6 nm for the crystal when the pumping energy is 400 mu J/pulse. The threshold value for an optically pumped laser is approximately 350 mu J/pulse.

Room-temperature ferromagnetic semiconductor MnxGa1-xSb

Ferromagnetic semiconductor MnxGa1-xSb single crystals were fabricated by Mn-ions implantation, deposition, and the post annealing. Magnetic hysteresis-loops in the MnxGa1-xSb single crystals were obtained at room temperature (300 K). The structure of the ferromagnetic semiconductor MnxGa1-xSb single crystal was analyzed by Xray diffraction. The distribution of carrier concentrations in MnxGa1-xSb was investigated by electrochemical capacitance- voltage profiler. The content of Mn in MnxGa1-xSb varied gradually from x = 0.09 near the surface to x = 0 in the wafer inner analyzed by X-ray diffraction. Electrochemical capacitance-voltage profiler reveals that the concentration of p-type carriers in MnxGa1-xSb is as high as 1 1021 cm-3, indicating that most of the Mn atoms in MnxGa1-xSb take the site of Ga, and play a role of acceptors.

Frequency characteristics and dynamical behaviors of self-modulation in vertical-cavity surface-emitting lasers

The frequency characteristics of a VCSEL with a quarter-wave plate (QWP) and an external reflector are investigated with the translation matrix of the vectorial field. Two series of eigenmode with a shift of half the free spectrum range are linearly polarized, respectively, along the neutral axes of QWP. We also numerically explore the polarization self-modulation phenomenon by using a vectorial laser equation and considering the inhomogeneous broadening of the gain medium. If the external cavity is so short that the shift is bigger than the homogeneous broadening, two stable longitudinal modes oscillate, respectively, on the neutral axes of QWP because they consume different carriers. With a long external cavity, the competition of the modes for the common carriers causes the intensity fluctuation of the modes with a period of one round-trip time of the external cavity.

First-passage failure and its feedback minimization of quasi-partially integrable Hamiltonian systems

An n degree-of-freedom Hamiltonian system with r (1¡r¡n) independent 0rst integrals which are in involution is calledpartially integrable Hamiltonian system. A partially integrable Hamiltonian system subject to light dampings andweak stochastic excitations is called quasi-partially integrable Hamiltonian system. In the present paper, the procedures for studying the 0rst-passage failure and its feedback minimization of quasi-partially integrable Hamiltonian systems are proposed. First, the stochastic averaging methodfor quasi-partially integrable Hamiltonian systems is brie4y reviewed. Then, basedon the averagedIt ˆo equations, a backwardKolmogorov equation governing the conditional reliability function, a set of generalized Pontryagin equations governing the conditional moments of 0rst-passage time and their boundary and initial conditions are established. After that, the dynamical programming equations and their associated boundary and 0nal time conditions for the control problems of maximization of reliability andof maximization of mean 0rst-passage time are formulated. The relationship between the backwardKolmogorov equation andthe dynamical programming equation for reliability maximization, andthat between the Pontryagin equation andthe dynamical programming equation for maximization of mean 0rst-passage time are discussed. Finally, an example is worked out to illustrate the proposed procedures and the e9ectiveness of feedback control in reducing 0rst-passage failure.

Semi-gas kinetics model for performance modeling of flowing chemical oxygen-iodine lasers (COIL)

A semi-gas kinetics (SGK) model for performance analyses of flowing chemical oxygen-iodine laser (COIL) is presented. In this model, the oxygen-iodine reaction gas flow is treated as a continuous medium, and the effect of thermal motions of particles of different laser energy levels on the performances of the COIL is included and the velocity distribution function equations are solved by using the double-parameter perturbational method. For a premixed flow, effects of different chemical reaction systems, different gain saturation models and temperature, pressure, yield of excited oxygen, iodine concentration and frequency-shift on the performances of the COIL are computed, and the calculated output power agrees well with the experimental data. The results indicate that the power extraction of the SGK model considering 21 reactions is close to those when only the reversible pumping reaction is considered, while different gain saturation models and adjustable parameters greatly affect the output power, the optimal threshold gain range, and the length of power extraction.

The magnetic and structure properties of room-temperature ferromagnetic semiconductor (Ga,Mn)N

Diluted magnetic semiconductor (Ga,Mn)N were prepared by the implantation of Mn ions into GaN/Al2O3 substrate. Clear X-ray diffraction peak from (Ga,Mn)N is observed. It indicates that the solid solution (Ga,Mn)N phase was formed with the same lattice structure as GaN and different lattice constant. Magnetic hysteresis-loops of the (Ga,Mn)N were obtained at room temperature (293 K) with the coercivity of about 2496.97 A m(-1). (C) 2003 Elsevier B.V. All rights reserved.

Theory of local mode excitation in polyatomics by frequency-modulated lasers

that the Stokes-interaction relation is reasonable qualitatively but not correct

One possible way to promote the bond-selective chemical-reactions by frequency-modulated lasers

It is proposed in this paper that we can use frequency-modulated (FM) lasers to realize bond-selective chemical reactions or to raise the efficiency of molecular isotope separation. Examples are given for HF molecule and the C–H bond in some hydrocarbons.