半导体激光器单管准直实验研究

利用高斯光束的ABCD传输矩阵理论分析了LD与自聚焦透镜之间的距离与出射光束远场光斑尺寸之间的关系.通过理论计算可以方便地得到最佳距离,获得较高亮度输出,并进行了实验验证.对平面自聚焦透镜、球面自聚焦透镜和圆柱透镜的准直效果进行了实验比较,最后将自聚焦透镜与LD固定,制做了实用的器件,该器件可以将LD椭圆形光斑转变成线形光斑,快轴、慢轴远场发散角分别为0.1°和2.5°,耦合效率86%.

60%电光效率高功率激光二极管阵列

设计并制备了980 nm高量子效率和极低光损耗的激光二极管(LD)外延材料和器件。微通道封装1 cm激光二极管阵列在连续(CW)工作条件下最大电光效率达到60.0%,相应的斜率效率和输出光功率分别为1.1 W/A和38.2 W。测试得到外延材料的内损耗系数和内量子效率分别为0.58 cm~(-1)和91.6%。测试分析表明,器件电光效率的提高主要在于新型的InGaAs/GaAsP应变补偿量子阱和大光腔结构设计。

High power red-light GaInP/AlGaInP laser diodes with nonabsorbing windows based on Zn diffusion-induced quantum well intermixing

The layer structure of GaInP/AlGaInP quantum well laser diodes (LDs) was grown on GaAs substrate using low-pressure metalorganic chemical vapor deposition (LP-MOCVD) technique. In order to improve the catastrophic optical damage (COD) level of devices, a nonabsorbing window (NAW), which was based on Zn diffusion-induced quantum well intermixing, was fabricated near the both ends of the cavities. Zn diffusions were respectively carried out at 480, 500, 520, 540, and 580 Celsius degree for 20 minutes. The largest energy blue shift of 189.1 meV was observed in the window regions at 580 Celsius degree. When the blue shift was 24.7 meV at 480 Celsius degree, the COD power for the window LD was 86.7% higher than the conventional LD.

Contrastive study of two SESAMs for passive mode-locking in Nd:YVC>4 laser with low pump power

Two semiconductor saturable absorber mirrors (SESAMs), of which one is coated with 50% reflection film on the top and the other is not, were contrastively studied in passively mode-locked solid-state lasers which were pumped by low output power laser diode (LD). Experiments have shown that reducing the modulation depth of SESAM by coating partial reflection film, whose reflectivity is higher than that between SESAM and air interface, is an effective method to get continuous wave (CW) mode-locking instead of Q-switched mode-locking (QML) in low power pumped solid-state lasers. A simple Nd:YVO4 laser pumped by low power LD, in which no water-cooling system was used, could obtain CW mode-locking by the 50% reflector coated SESAM with average output power of ~ 20 mW

连续波500 W全固态Nd∶YAG激光器研究

研制了全国产化全固态半导体激光器(LD)抽运模块，Nd∶YAG激光输出功率达500 W。介绍了优化抽运模块结构参数的程度。从增益分布特性等方面，介绍了研究其输入-输出功率特性的实验装置，随着抽运功率的增加，Nd∶YAG激光输出以斜率效率47%线性增加，最大输出功率达到575 W，光-光转换效率达26.1%。采用He-Ne激光探测法实验测量了该抽运模块中的热透镜效应。通过测量热焦距，分析了其热透镜效应

用于干涉测量的光栅外腔半导体激光器

研制了用于光干涉测量的单稳频、窄线宽光栅外腔半导体激光器(LD).它由出光面镀有增透膜的单管半导体激光器、光束校正准直系统、闪耀光栅、注入电流驱动系统及温度控制系统组成.闪耀光栅作为外腔光反馈元件对单管半导体激光器输出的纵模进行选择,使之工作在单纵模状态.外腔的引入还使输出光的谱线宽度得以大大压窄.注入电流驱动系统为半导体激光器提供工作电流.温度控制系统由双层温控组成.第一层用于控制单管半导体激光器管芯温度;另一层用于及时带走第一层温控产生的热量,并消除环境温度影响,使外腔温度稳定.该温控系统可使所构成激光器的温度稳定在1‰℃量级.对研制的外腔半导体激光器的特性进行测试,其输出功率恒定、模式单一稳定、谱线宽度优于1.4 MHz.

Optimal distance from high power laser diode to cylindrical microlens in a coupling system

In a practical coupling system, a cylindrical microlens is used to collimate the emission of a high powerlaser diode (LD) in the dimension perpendicular to the junction plane. Using passive alignment, the LD isplaced in the focus of the cylindrical microlens generally, regardless of the performance of the multimodeoptical fiber and the LD. In this paper, a more complete analysis is arrived at by ray-tracing technique,by which the angle θ of the ray after refraction is computed as a function of the angle θo of the ray beforerefraction. The focus of the cylindrical microlens is not always the optimal position of the LD. In fact, inorder to achieve a higher coupling efficiency, the optimal distance from the LD to the cylindrical microlensis dependent on not only the radius R and the index of refraction n of the cylindrical microlens, but alsothe divergence angle of the LD in the dimension perpendicular to the junction plane and the numericalaperture (NA) of the multimode optical fiber. The results of this discussion are in good agreement withexperimental results.

Narrow-beam divergence 1.55μm laser diodes with integrated self-aligned spotsize conVerter

This paper describes the high performance of narrow-beam divergence spot size converter (SSC) integrated separately confined heterostructure (SCH) LD. The upper optical confinement layer (OCL) and the butt-coupled tapered thickness waveguide were regrown simultaneously, which not only offered the separated optimization of the active region and the integrated spotsize converter, but also reduced the difficulty of the butt-joint selective regrowth. The threshold current was as low as 5.4 mA, the output power at 55 mA was 10.1 mW, the vertical and horizontal far field divergence angles were as low as 9°and 15°, and the 1-dB misalignment tolerances were 3.6 and 3.4μm, respectively.

多量子阱电吸收调制DFB激光器的一种新型LP-MOCVD对接生长方法

提出了一种提高多量子阱电吸收调制DFB-LD集成器件（EML）耦合效率的对接生长方法。采用LP-MOCVD外延方法，制作了对接方法不同的三种样片，通过扫描电镜研究它们的表面及对接界面形貌，发现新对接结构的样片具有更好的对接界面。制作出相应的三种EML管芯，从测量所得到的出光功率特性曲线，计算出不同对接方法下EML管芯的耦合效率和外量子效率。实验结果表明，这种对接生长方案，可以获得光滑的对界面，显著提高了激光器和调制器之间的耦合效率（从常规的17%提高到78％）及EML器件的外量子效率（从0.03mW/mA提高到0.15mW/mA)。

大功率激光二极管高亮度、高功率密度光纤耦合（英文）

将条宽为100μm，有源区厚度为1μm的大功率激光二极管(LD)的输出光束高效地耦合到芯径是50μm的多模光纤中，得到了高亮度、高功率密度的光纤输出。功率密度高达3.6×10~4W/cm~2，耦合效率为70%。LD输出光束的发散角较大并且存在较大的像散，因此耦合系统中需要结构复杂、性能可靠的微透镜。采用在一个玻璃衬底上，具有两个不同曲率半径的双曲面透镜实现LD与多模光纤的耦合。

1.5 mu m DFB integrated with vertical tapered spotsize converter fabricated by selective MOVPE

1.5 mu m DFB LD butt-joint integrated with vertical tapered spotsize converter was fabricated by LP-MOVPE. The vertical far field angle (FWHM) was decreased from 34degrees to 10degrees the threshold currents was as low as 19.8mA, the output power was 9.6mw at 100mA without HR coating and the SMSR was 35.8dB. The 1-dBm misalignment tolerance was 3.2 mu m, while the counterpart of the device without SSC was 2.2 mu m.

650nm AlGaInP quantum well lasers for the application of DVD

Main application of 650nm band laser diodes are for digital versatile disk (DVD). We demonstrate here the 650nm AlGaInP LD grown by LP-MOCVD with the structure of selected buried ridge waveguide. Excellent performance of LD have been achieved such as threshold current, threshold current density as low as 20mA and 350A/cm(2) respectively at room temperature, the operating temperature up to 90 for the linear power output of 5mw. RIN is about -130db/Hz, The samples of LD have been certified by PUH manufacturers.

The plasmon resonance absorption of Ag/SiO2 nanocomposite films

The plasmon resonance absorption of the Ag/SiO2 nanocomposite film is investigated. The measured absorption spectra are compared with those calculated by the Mie theory. The results indicate that the Mie theory on the basis of classical electrodynamics can only partially explain the optical absorption spectra of the Ag/SiO2 nanocomposite film. We believe that the plasmon resonance absorption is mainly an intrinsic quality of the metal particle, and can be explained only with the electronic structure of the metal particle. In the latter, surface resonance state is introduced to systematically discuss the optical absorption spectra of the Ag/SiO2 nanocomposite film. (C) 2003 Elsevier Science B.V. All rights reserved.

OLAND生物脱氮系统运行条件及其微生物群落结构的研究

OLAND两阶段生物脱氮系统是一项正在开发且极具应用前景的处理高氨氮、低COD废水的新技术。在实验室水平，对OLAND系统限氧亚硝化阶段MBR反应器和厌氧氨氧化阶段SBR反应器的启动和运行进行了系统研究。MBR反应器控制参数在DO0.1-0.3mg/L，pH7.8±0.1，温度30±0.5℃，SRT无穷大的条件下，可实现在较高的容积负荷By＝IO00mgN／L，水力停留时间HRT：ld下稳定的亚硝酸型硝化，使NH4+-N和NO2-N的出水比例达到理想的比值（1:1.20±0.20），保证厌氧氨氧化阶段SBR反应器的理想进水；SBR反应器在完全厌氧、pH7.8-8.2，温度30±0．5℃，SRT无穷大的条件下，无需外加任何有机碳源，在较高总氮负荷550mgN／L下，可实现NH4+-N和NO2--N同时稳定的去除，二者的消耗比例为1:（1.21±0.05），总氮去除率高达92％。采用巢式PCR、DGGE、 FISH等分子技术对MBR反应器硝化菌群随溶解氧的动态变化规律和SBR反应器厌氧氨氧化菌群结构、组成进行了研究，并探讨了硝化菌群与氮素组成变化之间的内在联系。结果表明：在限氧亚硝化阶段硝化菌群中氨氧化菌受溶解氧浓度的影响较大，其种群结构从反应器启动初期到稳定后期发生了非常明显的变化。亚硝酸氧化菌NOB的种群组成受溶氧影响并不明显，从启动初期到稳定后期其种群结构无明显变化。硝化菌群中氨氧化菌 AOB与亚硝酸氧化菌NOB的数量比例关系随溶解氧的降低而不断升高，从最初的3.6:1升高到稳定后期的5.5:1。MBR反应器优势硝化菌群主要由A、B、C三类氨氧化菌和硝化杆菌D、硝化螺菌F组成，其中优势菌C为维持MBR反应器稳定出水比例的主要功能菌。硝化菌群组成和结构的变化，带来了不同N素之间组成和比例的规律性变化。厌氧氨氧化阶段基本由厌氧氨氧化菌AnAOB和ANAMMOX两类菌组成，二者空间结构紧密，在反应器中的活菌数量比例分别为55％和42％。厌氧氨氧化菌AnAOB种群多样性相对比较丰富，主要由条带I和H所代表的两种优势菌组成；ANAMMOX菌种群多样性变化较小，其种群主要由优势菌K和J组成。对MBR和SBR反应器中的优势菌进行了克隆、测序和系统发育学分析，结果表明：限氧亚硝化阶段MBR反应器启动初期的优势菌A属于Nitrosomonadaceae科，是否是一个新属，还有待于进一步鉴定。运行中期优势菌B与Nitroso）nonaseurooaea亲缘关系最近，同源性高达99.1％，暂命名为Nilrosomonas sp.BI。稳定后期优势菌C与Nitrosomonas eutroPha亲缘关系最近，同源性为96.3％，暂命名为Nifrosomonas sp．cl。硝化杆菌属优势菌D与Nitrobacter alkalicus、Nitrobacter hambllrgensts和Nitlobac招rwinograsky 亲缘关系较近，同源性分别为95.5-97％、96.5～97％和95.8～96.8％。SBR反应器中AnAOB优势菌I与MBR反应器优势菌B亲缘关系最近，同源性高达98.7％，与Nitlosomonas euroPaea同源性为98.3％。根据序列比较和生理特性分析，优势菌I与优势菌B应为Nitrosomonas属两个不同的种，暂将优势菌I命名为Nitrosomonas sp．II。优势菌H与MBR反应器优势菌C亲缘关系最近，同源性达97.9％，与Nitrosomonas eutropha同源性为96.3％。结合其生理特性分析，二者应为Nitrosomonas属两个不同的种，暂将优势菌H命名为Nitrosomollas sp．Hl。ANAMMox优势菌K与未培养的 Planctomycete和已鉴定的另一种ANAMMoX菌尤uenenia sf况ttgartiensis亲缘关系较近，同源性分别为99.8％和96.6％。优势菌J与Gen bank收录的所有菌的相似性均低于76％，说明该菌是OLAND系统厌氧氨氧化阶段比较独特的菌，是迄今为止在厌氧反应过程中未发现的一个新菌。