Binding energy of excitons bound to neutral donors in two-dimensional semiconductors

The binding energies of excitons bound to neutral donors in two-dimensional (2D) semiconductors within the spherical-effective-mass approximation, which are nondegenerate energy bands, have been calculated by a variational method for a relevant range of the effective electron-to-hole mass ratio sigma. The ratio of the binding energy of a 2D exciton bound to a neutral donor to that of a 2D neutral donor is found to be from 0.58 to 0.10. In the limit of vanishing sigma and large sigma, the results agree fairly well with previous experimental results. The results of this approach are compared with those of earlier theories.

Two-dimensional network of dislocations and nanocavities in hydrogen-implanted and two-step annealed silicon

Conventional transmission electron microscopy and energy-filtering were used to study the dislocations and nanocavities in proton-implanted [001] silicon. A two-dimensional network of dislocations and nanocavities was found after a two-step annealing, while only isolated cavities were present in single-step annealed Si. In addition, two-step annealing increased materially the size and density of the nanocavities. The Burgers vector of the dislocations was mainly the 1/2[110] type. The gettering of oxygen at the nanocavities was demonstrated. (C) 1998 American Institute of Physics. [S0003-6951(98)00620-2].

Electronic states of a two-dimensional electron system in a lateral superlattice and a perpendicular magnetic field

The electronic state of a two-dimensional electron system (2DES) in the presence of a perpendicular uniform magnetic field and a lateral superlattice (LS) is investigated theoretically. A comparative study is made between a LS induced by a spatial electrostatic potential modulation (referred to as a PMLS) and that induced by a spatial magnetic-field modulation (referred ro asa MMLS). By utilizing a finite-temperature self-consistent Hartree-Fock approximation scheme; the dependence of the electronic state on different system parameters (e.g., the modulation period, the modulation strength, the effective electron-electron interaction strength, the averaged electron density, and the system temperature) is studied in detail. The inclusion of exchange effect is found to bring qualitative changes to the electronic state of a PMLS, leading generally to a nonuniform spin splitting, and consequently the behavior of the electronic state becomes similar to that of a MMLS. The Landau-level coupling is taken into account, and is found to introduce some interesting features not observed before. It is also found that, even in the regime of intermediate modulation strength, the density dependence of the spin splitting of energy levels, either for a PMLS or a MMLS, can be qualitatively understood within the picture of a 2DES in a perpendicular magnetic field with the modulation viewed as a perturbation. [S0163-1829(97)02248-0].

Anomalous shift of the beating nodes in illumination-controlled In1-xGaxAs/In1-yAlyAs two-dimensional electron gases with strong spin-orbit interaction

The beating patterns in the Shubnikov-de Haas oscillatory magnetoresistance originating from zero-field spin splitting of two-dimensional electron gases (2DEGs) in In0.52Al0.48As/InxGa1-xAs/In0.52Al0.48As quantum wells with silicon delta doped on the upper barrier layer have been investigated by means of magnetotransport measurements before and after illumination. Contrary to the expectation, after each illumination, the beating nodes induced by the zero-field spin-splitting effect shift to lower and lower magnetic field due to the decrease in the zero-field spin-splitting energy of the 2DEGs. The anomalous phenomenon of the shift of the beating nodes and the decrease in spin-orbit coupling constants after illumination cannot be explained by utilizing the previous linear Rashba model. It is suggested that the decrease in the zero-field spin-splitting energy and the spin-orbit coupling constant arise from the nonlinear Rashba spin splitting.

Short range scattering mechanism of type-II GaSb/GaAs quantum dots on the transport properties of two-dimensional electron gas

We have studied the scattering process of AlGaAs/GaAs two-dimensional electron gas with the nearby embedded GaSb/GaAs type-II quantum dots (QDs) at low temperature. Quantum Hall effect and Shubnikov-de Haas oscillation were performed to measure the electron density n(2D), the transport lifetime tau(t) and the quantum lifetime tau(q) under various biased gate voltage. By comparing measured results of QDs sample with that of reference sample without embedded QDs, mobilities (transport mobility mu(t) and quantum mobility mu(q)) dominated by GaSb QDs scattering were extracted as functions of n(2D). It was found that the ratios of tau(t) to tau(q) were varying within the range of 1-4, implying the scattering mechanism belonging to the sort of short-range interaction. In the framework of Born approximation, a scattering model considering rectangular-shaped potential with constant barrier height was successfully applied to explain the transport experimental data. In addition, an oscillating ratio of tau(t)/tau(q) with the increasing n(2D) was predicted in the model.

Two-dimensional numerical simulations of shock waves in micro convergent-divergent nozzles

The steady two-dimensional Navier-Stokes equations with the slip wall boundary conditions were used to simulate the supersonic flow in micro convergent-divergent nozzles. It is observed that shock waves can take place inside or outside of the micronozzles under the earth environment. For the over-expanded flows, there is a boundary layer separation point, downstream of which a wave interface separates the viscous boundary layer with back air flow and the inviscid core flow. The oblique shock wave is followed by the bow shock and shock diamond. The viscous boundary layer thickness relative to the whole nozzle width on the exit plane is increased but attains the maximum value around of 0.5 and oscillates against this value with the continuous increasing of the nozzle upstream pressures. The viscous effect either changes the normal shock waves outside of the nozzle for the inviscid flow to the oblique shock waves inside the nozzle, or transfers the expansion jet flow without shock waves for the inviscid flow to the oblique shock waves outside of the nozzle. 

Phonon-limited mobility in two-dimensional semiconductors with spin-orbit coupling

The authors demonstrate that the Rashba spin-orbit interaction in low-dimensional semiconductors can enhance or reduce the electron-phonon scattering rate by as much as 25%. The underlying mechanism is that the electron-phonon scattering phase space for the upper (lower) Rashba band is significantly enhanced (suppressed) by the spin-orbit interaction. While the scattering time decreases for the upper level, the mobility of the level increases due to an additional term in the electron velocity. (C) 2007 American Institute of Physics.

Two-dimensional photovoltaic dark spatial solitons of partially spatially incoherent light

We report a successful experimental observation of two-dimensional photovoltaic dark solitons in an anisotropic crystal with partially spatially incoherent light beams. This kind of solitons results from the bulk photovoltaic effect, which depends on the direction of propagation of the optical beam and on the orientation of the intensity gradient, with respect to the principal axes of the crystal.

Rashba electron's ballistic transport in two-dimensional quantum waveguide

The ballistic transport of Rashba electrons in a straight structure in two-dimensional electron gas is studied. It is found that there is no mixing between the wave functions of spin up and spin down states, and the transfer matrix is independent for the spin in every interface. The influence of the structure and Rashba coefficient on the electron transport is investigated. Our results indicate that the transmission probabilities are independent of the sign and magnitude of the Rashba coefficient and it depends on the shape of the structure, especially the stub width. The antiresonance is found, where the quasiconfined state is formed in the center part of the structure.

Cyclotron-resonance mass of two-dimensional electrons in GaN/AlxGa1-xN heterostructures

The electron cyclotron-resonance (CR) mass of quasi-two-dimensional electrons in GaN/AlxGa1-xN heterostructures is studied theoretically. The correction to the CR mass due to electron-phonon interaction is investigated, taking into account band nonparabolicity, the occupation effect, and the screening of the electron-phonon coupling. The dependence of the CR mass on the electron density and on the magnetic field strength is displayed in detail, and the calculated CR mass agrees well with a recent experiment. We found that the effective electron-phonon coupling strength in GaN heterostructures is reduced below the bulk value.

Cyclotron resonance and quantum Hall effect studies of the two-dimensional electron gas confined at the GaN/AlGaN interface

We report on high magnetic fields (up to 40 T) cyclotron resonance, quantum Hall effect and Shubnikov-de-Hass measurements in high frequency transistors based on Si-doped GaN-AlGaN heterojunctions. A simple way of precise modelling of the cyclotron absorption in these heterojunctions is presented, We clearly establish two-dimensional electrons to be the dominant conducting carriers and determine precisely their in-plane effective mass to be 0.230 +/- 0.005 of the free electron effective mass. The increase of the effective mass with an increase of two-dimensional carrier density is observed and explained by the nonparabolicity effect. (C) 1997 American Institute of Physics.