Sol-gel-derived graphite organosilicate composite electrodes bulk-modified with Keggin-type alpha-germanomolybdic acid

A novel inorganic-organic hybrid material incorporating graphite powder and Keggin-type alpha -germanomolybdic acid (GeMo12) in methyltrimethoxysilane-based gels has been produced by the sol-gel technique and used to fabricate a chemically bulk-modified electrode. GeMo12 acts as a catalyst, graphite powder ensures conductivity by percolation, the silicate provides a rigid porous backbone, and the methyl groups endow hydrophobicity and thus limit the wetting section of the modified electrode. The GeMo12-modified graphite organosilicate composite electrode was characterized by cyclic and square-wave voltammetry. The modified electrode shows a high electrocatalytic activity toward the reduction of bromate, nitrite and hydrogen peroxide in acidic aqueous solution. In addition, the chemically-modified electrode has some distinct advantages over the traditional polyoxometalate-modified electrodes, such as long-term stability and especially repeatability of surface-renewal by simple mechanical polishing.

p Dissipative operator

In this paper the authors prove that the generalized positive p selfadjoint (GPpS) operators in Banach space satisfy the generalized Schwarz inequality, solve the maximal dissipative extension representation of p dissipative operators in Banach space by using the inequality and introducing the generalized indefinite inner product (GIIP) space, and apply the result to a certain type of Schrodinger operator.

A new protein structure of P-II class snake venom metalloproteinases: it comprises metalloproteinase and disintegrin domains

A new metalloproteinase-disintegrin, named Jerdonitin, was purified from Trimeresurus jerdonii venom with a molecular weight of 36 kDa on SDS-PAGE. It dose-dependently inhibited ADP-induced human platelet aggregation with IC50 of 120 nM. cDNA cloning and sequencing revealed that Jerdonitin belonged to the class II of snake venom metalloproteinases (SVMPs) (P-II class). Different from other P-II class SVMPs, metalloproteinase and disintegrin domains of its natural protein were not separated, confirmed by internal peptide sequencing. Compared to other P-II class SVMPs, Jerdonitin has two additional cysteines (Cys219 and Cys238) located in the spacer domain and disintegrin domain, respectively. They probably form a disulfide bond and therefore the metalloproteinase and disintegrin domains cannot be separated by posttranslationally processing. In summary, comparison of the amino acid sequences of Jerdonitin with those of other P-II class SVMPs by sequence alignment and phylogenetic analysis, in conjunction with natural protein structure data, suggested that it was a new type of P-II class SVMPs. (C) 2003 Elsevier Inc. All rights reserved.

Expression, purification and characterization of recombinant Jerdonitin, a P-II class snake venom metalloproteinase comprising metalloproteinase and disintegrin domains

Jerdonitin is a P-II class snake venom metalloproteinase comprising metalloproteinase and disintegrin domains. In this study, we established a high-level expression system in Pichia pastoris and developed a purification strategy for the recombinant Jerdonitin. This recombinant Jerdonitin degraded fibrinogen at a level of activity comparable with its wild type. The effects of recombinant Jerdonitin on inhibiting ADP-induced human platelet aggregation were in a dose-dependent manner with an IC50 of 248 nM. In addition, we reported here that Jerdonitin can significantly inhibit the growth of several cell lines, including human liver cancer cells (Bel7402), human leukemia cells (K562) and human gastric carcinoma cells (BGC823). This study offers recombinant Jerdonitin that will be valuable for further functional and structural studies of Jerdonitin. (C) 2009 Elsevier Ltd. All rights reserved.

Gene structure of goose-type lysozyme in the mandarin fish Siniperca chuatsi with analysis on the lytic activity of its recombinant in Escherichia coli

A goose-type lysozyme (g-lysozyme) gene has been cloned from the mandarin fish (Siniperca chuatsi), with its recombinant protein expressed in Escherichia coli. From the first transcription initiation site, the mandarin fish g-lysozyme gene extends 1307 nucleotides to the end of the 3' untranslated region, and it contains 5 exons and 4 introns. The open reading frame of the glysozyme transcript has 582 nucleotides which encode a 194 amino acid peptide. The 5' flanking region of mandarin fish glysozyme gene shows several common transcriptional factor binding sites when compared with that from Japanese flounder (Paralichthys olivaceus). The recombinant mandarin fish g-lysozyme was expressed in E. coli by using pET-32a vector, and the purified recombinant g-lysozyme shows lytic activity against Micrococcus lysodeikticus. (c) 2005 Elsevier B.V All rights reserved.

Enhanced mid-infrared transmission in heavily doped n-type semiconductor film based on surface plasmons

Transmission of electromagnetic wave in a heavily doped n-type GaAs film is studied theoretically. From the calculations, an extraordinary transmission of p-polarized waves through the film with subwavelength grooves on both surfaces at mid-infrared frequencies is found. This extraordinary transmission is attributed to the coupling of the surface-plasmon polariton modes and waveguide modes. By selecting a set of groove parameters, the transmission is optimized to a maximum. Furthermore, the transmission can be tuned by dopant concentrations. As the dopant concentration increases, the peak position shifts to higher frequency but the peak value decreases.

A new p-n structure ultraviolet photodetector with p(-)-GaN active region

A new ultraviolet photodetector of employing p menus type GaN (p(-)-GaN) as the active layer is proposed. It is easy to obtain the p(-)-GaN layer with low carrier concentration. As a result, the depletion region can be increased and the quantum efficiency can be improved. The influence of some structure parameters on the performance of the new device is investigated. Through the simulation calculation, it is found that the quantum efficiency increases with the decrease of the barrier height between the metal electrode and the p(-)-GaN layer, and it is also found that the quantum efficiency can be improved by reducing the thickness of the p(-)-GaN layer. To fabricate the new photodetector with high performance, we should employ thin p(-)-GaN layer as the active layer and reduce the Schottky barrier height.

Synthesis of high quality n-type CdS nanobelts and their applications in nanodevices

High quality n-type CdS nanobelts (NBs) were synthesized via an in situ indium doping chemical vapor deposition method and fabricated into field effect transistors (FETs). The electron concentrations and mobilities of these CdS NBs are around (1.0x10(16)-3.0x10(17))/cm(3) and 100-350 cm(2)/V s, respectively. An on-off ratio greater than 10(8) and a subthreshold swing as small as 65 mV/decade are obtained at room temperature, which give the best performance of CdS nanowire/nanobelt FETs reported so far. n-type CdS NB/p(+)-Si heterojunction light emitting diodes were fabricated. Their electroluminescence spectra are dominated by an intense sharp band-edge emission and free from deep-level defect emissions. (c) 2006 American Institute of Physics.

Nanocrystalline silicon films with high conductivity and the application for PIN solar cells

Intrinsic nanocrystalline silicon films (nc-Si:H) were prepared by plasma enhanced chemical vapor deposition (PECVD) method. Films' microstructures and characteristics were studied with Raman spectroscopy and Atom Force Microscope (AFM). The electronic conductivity of nc-Si:H films was found to be 4.9 x 10(0)Omega(-1) cm(-1), which was one order of magnitude higher than the reported 10(-3)-10(-1)Omega(-1)cm(-1). And PIN solar cells with nc-Si:H film as intrinsic thin-layer (ITO/n(+)-nc-Si:H/i-nc-Si:H/p-c-Si/Ag) were researched. The cell's performances were measured, the open-circuit voltage V-oc was 534.7 mV, short-circuit current I-sc was 49.24 mA (3 cm(2)) and fill factor FF was 0.4228. (c) 2006 Elsevier Ltd. All rights reserved.

Effect of lightly Si doping on the minority carrier diffusion length in n-type GaN films

We investigate the effects of lightly Si doping on the minority carrier diffusion length in n-type GaN films by analyzing photovoltaic spectra and positron annihilation measurements. We find that the minority carrier diffusion length in undoped n-type GaN is much larger than in lightly Si-doped GaN. Positron annihilation analysis demonstrates that the concentration of Ga vacancies is much higher in lightly Si-doped GaN and suggests that the Ga vacancies instead of dislocations are responsible for the smaller minority carrier diffusion length in the investigated Si-doped GaN samples due to the effects of deep level defects. (c) 2006 American Institute of Physics.

Aluminium doping induced enhancement of p-d coupling in ZnO

Valence-band type Auger lines in Al doped and undoped ZnO were comparatively studied with the corresponding core level x-ray photoelectron spectrography (XPS) spectra as references. Then the shift trend of energy levels in the valence band was that p and p-s-d states move upwards but e and p-d states downwards with increasing Al concentration. The decreased energy of the Zn 3d state is larger than the increased energy of the 0 2p state, indicating the lowering of total energy. This may indicate that Al doping could induce the enhancement of p-d coupling in ZnO, which originates from stronger Al-O hybridization. The shifts of these states and the mechanism were confirmed by valence band XPS spectra and 0 K-edge x-ray absorption spectrography (XAS) spectra. Finally, some previously reported phenomena are explained based on the Al doping induced enhancement of p-d coupling.

Electronic properties of sulfur passivated undoped-n(+) type GaAs surface studied by photoreflectance

Photoreflectance (PR) has been used to study surface electronic properties (electric field, Fermi level pinning, and density of surface states) of undoped-n(+) (UN+) GaAs treated in the solution of ammonium sulfide in isopropanol. Complex Fourier transformation (CFT) of PR spectra from passivated surface shows that the sulfur overlay on GaAs surface makes no contribution to Franz-Keldysh oscillations (FKOs). The barrier height measured by PR is derived from surface states directly, rather than the total barrier height, which includes the potentials derived from Ga-S and As-S dipole layers. Comparing with native oxidated surface, the passivation leads to 80 meV movement of surface Fermi level towards the conduction band minimum, and reduction by more than one order in density of surface states. (C) 2003 Elsevier Science B.V. All rights reserved.