322 resultados para gallium nitride


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A series of unsupported dimolybdenum nitride (gamma-Mo(2)N) catalysts differing in surface area were prepared by temperature programmed reduction of MoO(3) with a mixture of NH(3):N(2) (90:10). Characterization of catalysts by BET, XRD, TPR and XPS techniques was carried out. The samples were used as catalysts in hydrotreating reactions (simultaneous hydrodesulfurization of thiophene and hydrogenation of cyclohexene). Low surface area gamma-Mo(2)N materials show much higher specific conversions than those with higher surface area. These results indicate that HDS and HYD reactions over gamma-Mo(2)N seem to be structure-sensitive. The relative exposure extent of crystalline planes (111) and (200) over the different catalysts can be associated with their hydrogen adsorption capacities and with their catalytic performances. The catalytic activities are significantly affected by the catalyst pretreatment conditions. (C) 1999 Elsevier Science B.V. All rights reserved.

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The arc-root attachment on the anode surface of a dc non-transferred arc plasma torch has been successfully observed using a novel approach. A specially designed copper mirror with a boron nitride film coated on its surface central-region is employed to avoid the effect of intensive light emitted from the arc column upon the observation of weakly luminous arc root. It is found that the arc-root attachment is diffusive on the anode surface of the argon plasma torch, while constricted arc roots often occur when hydrogen or nitrogen is added into argon as the plasma-forming gas.

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Bulk single crystals of GaN and AlN can be grown from supercritical fluids using the ammonothermal method, which utilizes ammonia as fluid rather than water as in the hydrothermal process. In this process, a mineralizer such as amide, imide or nitride is used to attack a bulk nitride feedstock at temperatures from 200°C to 500°C and pressures from 1 to 4 kbar. Ammonothermal systems have been modeled here using fluid dynamics, thermodynamics and heat transfer models. The nutrient is considered as a porous media bed and the fluid flow is simulated using the Darcy-Brinkman-Forchheimer model. The resulting governing equations are solved using the finite volume method. The effects of particle size on flow pattern and temperature distribution in an autoclave are analyzed.

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Nanoindentation and nanoscratch tests were performed for titanium nitride (TiN) coatings on different tool steel substrates to investigate the indentation/scratch induced deformation behavior of the coatings and the adhesion of the coating–substrate interfaces and their tribological property. In this work, TiN coatings with a thickness of about 500 nm were grown on GT35, 9Cr18 and 40CrNiMo steels using vacuum magnetic-filtering arc plasma deposition. In the nanoindentation tests, the hardness and modulus curves for TiN/GT35 reduced the slowest around the film thickness 500 nm with the increase of indentation depth, followed by TiN/9Cr18 and TiN/40CrNiMo. Improving adhesion properties of coating and substrate can decrease the differences of internal stress field. The scratch tests showed that the scratch response was controlled by plastic deformation in the substrate. The substrate plays an important role in determining the mechanical properties and wear resistance of such coatings. TiN/GT35 exhibited the best load-carrying capacity and scratch/wear resistance. As a consequence, GT35 is the best substrate for TiN coatings of the substrate materials tested.

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Under optimized operating parameters, a hard and wear resistant ( Ti,Al)N film is prepared on a normalized T8 carbon tool steel substrate by using pulsed high energy density plasma technique. Microstructure and composition of the film are analysed by x-ray diffraction, x-ray photoelectron spectroscopy, Auger electron spectroscopy and scanning electron microscopy. Hardness profile and tribological properties of the film are tested with nano-indenter and ring-on-ring wear tester, respectively. The tested results show that the microstructure of the film is dense and uniform and is mainly composed of ( Ti,Al)N and AlN hard phases. A wide transition interface exists between the film and the normalized T8 carbon tool steel substrate. Thickness of the film is about 1000 nm and mean hardness value of the film is about 26GPa. Under dry sliding wear test conditions, relative wear resistance of the ( Ti,Al)N film is approximately 9 times higher than that of the hardened T8 carbon tool steel reference sample. Meanwhile, the ( Ti,Al)N film has low and stable friction coefficient compared with the hardened T8 carbon tool steel reference sample.

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Silicon nitride with helical structure was prepared on a large scale by CVD. On the microscale, these coiled Si3N4 ceramics still possess superelasticity and can recover their original shapes after cyclic loadings without noticeable deformations. These results suggest helical microcoils could have potential in microdevices for MEMS, motors, electromagnets, generators, and related equipment.

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High dose Mn was implanted into semi-insulating GaAs substrate to fabricate embedded ferromagnetic Mn-Ga binary particles by mass-analyzed dual ion beam deposit system at room temperature. The properties of as-implanted and annealed samples were measured with X-ray diffraction, high-resolution X-ray diffraction to characterize the structural changes. New phase formed after high temperature annealing. Sample surface image was observed with atomic force microscopy. All the samples showed ferromagnetic behaviour at room temperature. There were some differences between the hysteresis loops of as-implanted and annealed samples as well as the cluster size of the latter was much larger than that of the former through the surface morphology. (C) 2004 Elsevier B.V. All rights reserved.

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A mathematical model is presented for the numerical simulation of the flow, temperature, and concentration fields in an rf plasma chemical reactor. The simulation is performed assuming chemical equilibrium. The extent of validity of this assumption is discussed. The system considered is the reaction of SiCl4 and NH3 for the production of Si3N4.