The induction plasma chemical reactor: Part I. Equilibrium model
| Data(s) |
1990
|
|---|---|
| Resumo |
A mathematical model is presented for the numerical simulation of the flow, temperature, and concentration fields in an rf plasma chemical reactor. The simulation is performed assuming chemical equilibrium. The extent of validity of this assumption is discussed. The system considered is the reaction of SiCl4 and NH3 for the production of Si3N4. |
| Identificador | |
| Idioma(s) |
英语 |
| Fonte |
Plasma Chemistry And Plasma Processing.1990,10(1):133-150 |
| Palavras-Chave | #Induction plasma - modeling - chemical equilibrium - silicon nitride synthesis |
| Tipo |
期刊论文 |
