Effect of counterpart on the tribological behavior and tribo-induced phase transformation of Si

The tribological behaviors and phase transformation of single crystal silicon against Si3N4, Ruby and steel were investigated in this study. It was found that the strong chemical action between silicon and Fe was the key factor to the tribological behavior of silicon as slid against steel. SEM and Raman spectroscopy indicated that phase transformation of single crystal silicon occurred during the running-in period at low sliding velocity as slid against Si3N4 and Ruby. and gave birth to single or a mixture phase of Si-III, Si-XII and amorphous silicon. The high hardness of counterpart and the absence of chemical action between silicon and counterpart facilitated the phase transformation of single crystal silicon. (C) 2008 Elsevier Ltd. All rights reserved.

Raman scattering of non-planar graphite: arched edges, polyhedral crystals, whiskers and cones

Planar graphite has been extensively studied by Raman scattering for years. A comparative Raman study of several different and less common non-planar graphitic materials is given here. New kinds of graphite whiskers and tubular graphite cones (synthetic and natural) have been introduced. Raman spectroscopy has been applied to the characterization of natural graphite crystal edge planes, an individual graphite whisker graphite polyhedral crystals and tubular graphite cones. Almost all of the observed Raman modes were assigned according to the selection rules and the double-resonance Raman mechanism. The polarization properties related to the structural features, the line shape of the first-order dispersive mode and its combination modes, the frequency variation of some modes in different carbon materials and other unique Raman spectral features are discussed here in detail.

Synthesis of GaN nanotip triangle pyramids on 3C-SiC epilayer/Si substrates via an in situ In-doping technique

GaN nanotip triangle pyramids were synthesized on 3C-SiC epilayer via an isoelectronic In-doping technique. The synthesis was carried out in a specially designed two-hot-boat chemical vapor deposition system. In (99.999%) and molten Ga (99.99%) with a mass ratio of about 1:4 were used as the source, and pieces of Si (111) wafer covered with 400-500 nm 3C-SiC epilayer were used as the substrates. The products were analyzed by x-ray diffraction, field emission scanning electron microscopy, high-resolution transmission electron microscopy, selected area electron diffraction, Raman spectroscopy, and photoluminescence measurements. Our results show that the as-synthesized GaN pyramids are perfect single crystal with wurtzite structure, which may have potential applications in electronic/photonic devices.

Synthesis and structures of morphology-controlled ZnO nano- and microcrystals

Zinc oxide flower-like bunches were directly synthesized on indium-doped tin oxide (ITO) glass substrates through a simple chemical bath deposition process. By adjusting precursor concentration, other morphologies ( spindles and rods) were also obtained. All of them are hexagonal and single crystalline in nature and grow along the [ 0001] crystallographic direction. The possible growth mechanisms for these nano- and microcrystals were proposed. It was revealed that both the inherent highly anisotropic structure of ZnO and the precursor concentration play crucial roles in determining final morphologies of the products. In addition, vibrational properties of ZnO crystals with different morphologies were investigated by Raman spectroscopy.

The growth of SiC on Si substrates with C2H4 and Si2H6

SiC was grown on Si (100) substrates oriented and off-oriented by 2-5 degrees towards [011] with simultaneous supply of C2H4 and S2H6 at 1050 degrees C. SiC formed during removal of oxide could be removed at 1150 degrees C. Twinned growth occurred on both oriented and off-oriented substrates during carbonization, but fewer twins formed on the off-oriented substrate than that on the oriented substrate. In SiC growth process, twinned growth continued on the off-oriented substrate whereas twinned growth stopped and single crystal SiC with double-domain (2 x 1) superstructure formed on the oriented substrate. SiC single crystal could grow on a carbonized twinned buffer layer. Obvious SiC LO and TO phonon modes were observed with Raman spectroscopy in the epilayer grown on the oriented substrate. The surface of the epilayer grown on the oriented substrate was smooth, while there was a high density of islands on the epilayer grown on the off-oriented substrate. The film grown on the oriented substrate is superior than that grown on the off-oriented substrate. (C) 1999 Elsevier Science B.V. All rights reserved.

The growth and characterization of GaN grown on a gamma-Al2O3/(001) Si substrate by metalorganic vapor phase epitaxy

Wurtzite single crystal GaN films have been grown onto a gamma-Al2O3/Si(001) substrate in a horizontal-type low pressure MOVPE system. A thin gamma-Al2O3 layer is an intermediate layer for the growth of single crystal GaN on Si although it is only an oriented polycrystal film as shown by reflection high electron diffraction. Moreover, the oxide is not yet converted to a fully single crystal film, even at the stage of high temperature for the GaN layer as studied by transmission electron microscopy. Double crystal x-ray linewidth of (0002) peak of the 1.3 mu m sample is 54 arcmin and the films have heavy mosaic structures. A near band edge peaking at 3.4 eV at room temperature is observed by photoluminescence spectroscopy. Raman scattering does not detect any cubic phase coexistence.

Charge-sensitive deep level transient spectroscopy of helium-ion-irradiated silicon, as-irradiated and after thermal annealing

Electrically active defects in the phosphor-doped single-crystal silicon, induced by helium-ion irradiation under thermal annealing, have been investigated. Isothermal charge-sensitive deep-level transient spectroscopy was employed to study the activation energy and capture cross-section of helium-induced defects in silicon samples. It was shown that the activation energy levels produced by helium-ion irradiation first increased with increasing annealing temperature, with the maximum value of the activation energy occurring at 873K, and reduced with further increase of the annealing temperature. The energy levels of defects in the samples annealed at 873 and 1073K are found to be located near the mid-forbidden energy gap level so that they can act as thermally stable carrier recombination centres.

碳化硅中氦离子高温注入引出的缺陷及其退火行为的光谱研究

6H-SiC single crystal specimens were implanted at 600 K with 100 KeV He ions to three successively increasing fluences and subsequently annealed at different temperatures ranging from 600℃ to 1200℃ in vacuum.After the annealing,the samples were investigated by using Raman scattering spectroscopy and photoluminescence spectrometry,respectively.Both of the two methods showed that the damage induced by helium-ion-implantation in the lattice is closely related to the dose.The thermal annealing brings about reco...中文摘要：对氦(He)离子高温(600K)注入6H-SiC中的辐照缺陷,在阶梯温度退火后演化行为的拉曼光谱和室温光致发光谱的特征进行了分析.这两种方法的实验结果表明,离子注入所产生晶格损伤的程度与注入剂量有关;高温退火导致损伤的恢复,不同注入剂量造成的晶格损伤需要不同的退火温度才可恢复.在阶梯温度退火下呈现出了点缺陷的复合、氦-空位团的产生、氦泡的形核、长大等特性.研究表明:高温(600K)注入在一定剂量范围内是避免注入层非晶化的一个重要方法,为后续利用氦离子注入空腔掩埋层吸杂或者制备低成本、低缺陷密度的绝缘层上碳化硅(SiCOI)材料提供了可能.

碳化硅中氦离子高温注入引入的缺陷及其退火行为的光谱研究

对氦(He)离子高温(600K)注入6H-SiC中的辐照缺陷,在阶梯温度退火后演化行为的拉曼光谱和室温光致发光谱的特征进行了分析.这两种方法的实验结果表明,离子注入所产生晶格损伤的程度与注入剂量有关;高温退火导致损伤的恢复,不同注入剂量造成的晶格损伤需要不同的退火温度才可恢复.在阶梯温度退火下呈现出了点缺陷的复合、氦-空位团的产生、氦泡的形核、长大等特性.研究表明:高温(600K)注入在一定剂量范围内是避免注入层非晶化的一个重要方法,为后续利用氦离子注入空腔掩埋层吸杂或者制备低成本、低缺陷密度的绝缘层上碳化硅(SiCOI)材料提供了可能.

Synthesis and Crystal Structure of a New 3D Copper B-Paradodecatungstate Compound: [Na-2(H2O)(8)][Na-8(H2O)(20)][Cu(en)(2)][W12O42] center dot 3H(2)O

A new polyoxotungstate complex [Na-2(H2O)(8)][Na-8(H2O)(20)][Cu(en)(2)][W12O42] center dot 3 H2O (1) (en = ethylenediamine) has been synthesized in aqueous solution and characterized by elemental analysis, IR spectroscopy and TG analysis, together with a single crystal X-ray diffraction study. In compound 1, the Cu(en)(2)(2+) complex cation links the [W12O42](12-) anions to form a I D chain, and the ID chains are further interconnected with Na-8(H2O)(20)(8+) and Na-2(H2O)(8)(2+) cations to construct a new 3D framework.

Characterization and optimization of AuNPs labeled by Raman reporters on glass based on silver enhancement

In this report, gold nanoparticles (AuNPs) labeled by Raman reporters (AuNPs-R6G) were assembled on glass and used as the seeds to in situ grow silver-coated nanostructures based on silver enhancer solution, forming the nanostructures of AuNPs-R6G@Ag, which were characterized by scanning electron microscopy (SEM) and UV-visible spectroscopy. More importantly, the obtained silver-coated nanostructures can be used as a surface enhancement Raman scattering (SERS) substrate. The different SERS activities can be controlled by the silver deposition time and assembly time of AuNPs-R6G on glass. The results indicate that the maximum SERS activity could be obtained on AuNPs-R6G when these nanostructures were assembled on glass for 2 h with silver deposition for 2 min.

Carbon Nanotube/Silica Coaxial Nanocable as a Three-Dimensional Support for Loading Diverse Ultra-High-Density Metal Nanostructures: Facile Preparation and Use as Enhanced Materials for Electrochemical Devices and SERS

In this paper, we have reported a very simple strategy (combined sonication with sol-gel techniques) for synthesizing well-defined silica-coated carbon nanotube (CNT) coaxial nanocable without prior CNT functionalization. After functionalization with NH2 group, the CNT/silica coaxial nanocable has been employed as a three-dimensional support for loading ultra-high-density metal or hybrid nanoparticles (NPs) such as gold NPs, Au/Pt hybrid NPs, Pt hollow NPs, and Au/Ag core/shell NPs. Most importantly, it is found that the ultra-high-density Au/Pt NPs supported on coaxial nanocables (UASCN) could be used as enhanced materials for constructing electrochemical devices with high performance. Four model probe molecules (O-2, CH3OH, H2O2, and NH2NH2) have been investigated on UASCN-modified glassy carbon electrode (GCE). It was observed that the present UASCN exhibited high electrocatalytic activity toward diverse molecules and was a promising electrocatalyst for constructing electrochemical devices with high performance. For instance, the detection limit for H2O2 with a signal-to-noise ratio of 3 was found to be 0.3 mu M, which was lower than certain enzyme-based biosensors.

Synthesis and characterization of polyethylene chains grafted onto the sidewalls of single-walled carbon nanotubes via copolymerization

Polyethylene (PE) chains grafted onto the sidewalls of SWCNTs (SWCNT-g-PE) were successfully synthesized via ethylene copolymerization with functionalized single-walled carbon nanotubes (f-SWCNTs) catalyzed by rac-(en)(THInd)(2)ZrCl2/ MAO. Here f-SWCNTs, in which alpha-alkene groups were chemically linked on the sidewalls of SWCNTs, were synthesized by Prato reaction. The composition and microstructure of SWCNT-g-PE were characterized by means of H-1 NMR, Fourier transform infrared spectroscopy (FTIR), Raman spectroscopy, thermogravimetric analyses (TGA), field-emission scanning electron microscope (FESEM), and transmission electron microscope (TEM). Nanosized cable-like structure was formed in the SWCNT-g-PE, in which the PE formed a tubular shell and several SWCNTs bundles existed as core. The formation of the above morphology in the SWCNT-g-PE resulted from successfully grafting of PE chains onto the surface of SWCNTs via copolymerization. The grown PE chains grafted onto the sidewall of the f-SWCNTs promoted the exfoliation of the mass nanotubes. Comparing with pure PE, the physical mixture of PE/f-SWCNTs and in situ PE/SWCNTs mixture, thermal stability, and mechanical properties of SWCNT-g-PE were higher because of the chemical bonding between the f-SWCNTs and PE chains.

Syntheses, crystal structures and magnetic properties of two heterometallic coordination polymers

Two heterometallic chain coordination polymers with the chemical formula {[Cu2Mn2L2(CH3OH)(H2O)] center dot 0.5CH(3)OH center dot 0.5CH(3)CH(2)OH}(n) (1) and {[Cu2Co2L2(H2O)(2)] center dot H2O}(n) (2) have been synthesized and characterized by IR, UV spectroscopy and single-crystal X-ray structural analysis, where H4L = 2-hydroxy-3-[(E)-({2-[(2-hydroxybetizoyl)amino]ethyl}imino)methyl] benzoic acid. Magnetic measurements showed that the two compounds exhibit antiferromagnetic coupling exchange interactions, and satisfactory fittings to the observed magnetic susceptibility data were obtained by assuming a linear four-spin arrangement with two isotropic magnetic exchange interactions.

Optical spectroscopy properties of KMgF3 : Eu2+ nanocrystals and powder synthesized by microemulsion and solvothermal process

Nanocrystals and powders of KMgF3 doped with Eu2+ were synthesized by the microemulsion method and the solvothermal process, respectively. The emission and excitation spectra of KMgF3:Eu2+ phosphors were measured and compared with those of the samples synthesized through a solid. state reaction, Bridgman-Stockbarger method, and mild hydrothermal technique. The KMgF3: Eu2+ samples synthesized by means of the microemulsion method and the solvothermal process show only a sharp emission peak located at 360 nm, in the emission spectra, which arises from the f -> f(P-6(1/2)-> S-8(1/2)) transition of Eu2+. The broad emission bands appear at 420 nm,,which arises from Eu2+ <- O2- cannot be observed(in the mild hydrothermal and single crystal samples, the emission peak at 420 nm besides the emission of Eu2+ at 360 nm is observed). In the excitation spectrum of the KMgF3: Eu2+ samples synthesized by the microemulsion method and the solvothermal process, the excitation peaks show an intensive blue shift. The blue shift can he attributed to the lower oxygenic content in the KMgF3: Eu2+ samples synthesized by the microemulsion method and the solvothermal process.