中能区丰中子核~(11)Li���反应总截面的测量(英文)

利用HIRFL提供的50MeV/u的~(13)C束流轰击Be靶,通过RIBLL选择出放射性核素~(11)Li.实验采用透射法测量了25—45MeV/u的~(11)Li���~(28)Si靶上的反应总截面.采用双参数Gauss密度分布形式,利用Glauber模型很好地拟合了高能和中能区的~(11)Li���验数据,并从密度分布中提取了核的物质均方根半径.

Li~-和Na~-单电子解离过程的研究

采用交叉束方法 ,利用负离子源产生的 3— 19keV的Li- 和Na- 轰击惰性气体靶He ,Ne和Ar ,通过静电偏转和位置灵敏探测器区分碰撞后中性粒子束和负离子束 ,测量了不同碰撞系统的中性粒子计数与相应入射负离子计数的比值R(E) ,并得到R(E)与入射负离子能量、负离子种类和靶原子种类的关系 .

晕核~(11)Be和~(11)Li���能谱

基于自相似结构壳模型,并考虑到单粒子轨道的均方根半径的振动,提出了尺度共振模型。在尺度共振模型中,考虑了晕中子轨道的尺度共振和核实表面的尺度共振。用尺度共振模型成功地计算了~(11)Be和~(11)Li���激发谱。

高电荷态离子126Xeq+引起GaN表面形貌变化研究

用不同电荷态的126Xeq+离子（9≤q≤30）在室温下轰击GaN晶体表面，经原子力显微镜分析表明，当q>18，辐照区域由隆起转为显著的刻蚀.被轰击后的GaN晶体表面形貌主要取决于入射离子的电荷态.同时，样品表面形貌还与入射离子的剂量和入射角有关；在实验参数范围，与入射离子的初动能没有明显关系（180 keV≤Ek≤600 keV）.当入射离子的电荷态q=18，与样品表面法线成60°角倾斜入射和垂直表面入射时，样品的表面几乎没有变化，只是倾斜入射后有很微小的隆起；当q＜18时，样品表面膨胀隆起，粗糙度增强，倾斜入射时表面隆起比垂直入射时更明显，而且都有清晰的峰状分界区；当q＞18时，样品表面被蚀刻呈凹陷状，有明显的齿状刻痕，且侵蚀深度与离子剂量近似呈线性关系，倾斜入射时的刻蚀深度大于垂直入射时的刻蚀深度.

Guiding of 150 keV O6+ ions through nanocapillaries in an uncoated Al2O3 membrane: special time dependence of the transmission profile width

This paper reports that the transmission of O6+ ions with energy of 150keV through capillaries in an uncoated Al2O3 membrane was measured, and agreements with previously reported results in general angular distribution of the transmitted ions and the transmission fractions as a function of the tilt angle well fitted to Gaussian-like functions were observed. Due to using an uncoated capillary membrane, our c is larger than that using a gold-coated one with a smaller value of E-p/q, which suggests a larger equilibrium charge Q(infinity) in our experiment. The observed special width variation with time and a larger width than that using a smaller E-p/q were qualitatively explained by using mean-field classical transport theory based on a classical-trajectory Monte Carlo simulation.

Inner structure of Spin(c)(4) gauge potential on 4-dimensional manifolds

The decomposition of Spin(c)(4) gauge potential in terms of the Dirac 4-spinor is investigated, where an important characterizing equation Delta A(mu) = -lambda A(mu) has been discovered. Here, lambda is the vacuum expectation value of the spinor field, lambda = parallel to Phi parallel to(2), and A(mu) the twisting U(1) potential. It is found that when), takes constant values, the characterizing equation becomes an eigenvalue problem of the Laplacian operator. It provides a revenue to determine the modulus of the spinor field by using the Laplacian spectral theory. The above study could be useful in determining the spinor field and twisting potential in the Seiberg-Witten equations. Moreover, topological characteristic numbers of instantons in the self-dual sub-space are also discussed.

Photoluminescence character of Xe ion irradiated sapphire

In the present work the photoluminescence (PL) character of sapphire implanted with 180 keV Xe and irradiated with 308 MeV Xe ions was studied. The virgin, implanted and irradiated samples were investigated by PL and Fourier transform infrared (FTIR) spectra measurements. The obtained PL spectra showed the maximum emission bands at 2.75, 3.0 and 3.26 eV for the implanted fluence of 1.0 x 10(15) ions/cm(2) and at 2.4 and 3.47 eV for the irradiated fluence of 1.0 x 10(13) ions/cm(2). The FTIR spectra showed a broaden absorption band between 460 and 630 cm(-1), indicating that strong damaged region formed in Al2O3.

Energy momentum for randall sundrum models

We investigate the conservation law of energy momentum for Randall-Sundrum models by the general displacement transform. The energy momentum current has a superpotential and are therefore identically conserved. It is shown that for Randall-Sundrum solution, the momentum vanishes and most of the bulk energy is localized near the Planck brane. The energy density is epsilon = epsilon(0)e(-3 vertical bar y vertical bar).

Effects of helium and oxygen common implantation in silicon wafer

Defect engineering for SiO2] precipitation is investigated using He-ion implantation as the first stage of separation by implanted oxygen (STMOX). Cavities are created in Si by implantation with helium ions. After thermal annealing at different temperatures, the sample is implanted with 120keV 8.0 x 10(16) cm(-2) O ions. The O ion energy is chosen such that the peak of the concentration distribution is centred at the cavity band. For comparison, another sample is implanted with O ions alone. Cross-sectional transmission electron microscopy (XTEM), Fourier transform infrared absorbance spectrometry (FTIR) and atomic force microscopy (AFM) measurements are used to investigate the samples. The results show that a narrow nano-cavity layer is found to be excellent nucleation sites that effectively assisted SiO2 formation and released crystal lattice strain associated with silicon oxidation.

铝镁尖晶石中He离子注入引起损伤的退火行为研究

利用卢瑟福沟道背散射技术结合表面的原子力显微分析，对注He的铝镁尖晶石晶体的晶格损伤及表面形变随退火温度变化的关系进行了研究.结果表明，不同注入剂量的样品中晶格损伤和表面形变表现出显著不同的退火行为.分析认为造成损伤演化的这种差异与注入的He原子在晶体中不同的聚集状态有关.

注入Ar+的蓝宝石晶体退火前后光致发光谱的分析

对注入Ar+后不同晶面取向的蓝宝石晶体在不同退火条件下的光致发光谱进行了分析.分析结果表明:三种晶面取向的蓝宝石样品经Ar+注入后，其光致发光谱中均出现了新的位于506nm处的发光峰；真空和空气气氛下的退火均对样品在506nm处的发光有增强作用，不同晶面取向的样品发光增强程度不同，且发光增强至最大时的退火温度也不同，空气气氛下的退火使样品发光增强程度更为显著.由此可以看出，退火气氛、退火温度和晶面取向均对样品发光峰强度有影响.