Fiber grating sensors for high-temperature measurement

Two fiber grating sensors for high-temperature measurements are proposed and experimentally demonstrated. The interrogation technologies of the sensor systems are all simple, low cost but effective. In the first sensor system, the sensor head is comprised of one fiber Bragg grating (FBG) and two metal rods. The lengths of the rods are different from each other. The coefficients of thermal expansion of the rods are also different from each other. The FBG will be strained by the sensor head when the temperature to be measured changes. The temperature is measured based on the wavelength-shifts of the FBG induced by the strain. In the second sensor system, a long-period fiber grating (LPG) is used as the high-temperature sensor head. The LPG is very-high-temperature stable CO2-Aaser-induced grating and has a linear function of wavelength-temperature in the range of 0 - 800 degrees C. A dynamic range of 0 - 800 degrees C and a resolution of 1 degrees C have been obtained by either the first or the second sensor system. The experimental results agree with theoretical analyses. (c) 2007 Elsevier Ltd. All rights reserved.

Field enhancement and power distribution characteristics of subwavelength-diameter terahertz hollow optical fiber

Fields in subwavelength-diameter terahertz hollow optical fiber (STHOF) can be intensified by large discontinuity of the electric field at high index contrast interfaces. The influences of fiber geometry and refractive index of the dielectric region on the fiber characteristics, such as power distribution, enhancement factor, have been discussed in detail. By appropriate design, the intensity in the central region of STHOF may be enhanced by a factor of greater than 1.5 compared with subwavelength-diameter terahertz fiber without the central hole and the loss can be reduced. For its compact structure and simple fabrication process, the fiber may be very useful in many miniaturized high performance and novel terahertz photonic devices. (c) 2007 Elsevier B.V. All rights reserved.

The analytical description and experiments of the optical bottle generated by an axicon and a lens

Based on the interferential theory, we deduce a new type of analytic expression suitable for describing the evolutions of the optical bottle beam generated from the axicon-lens optical system illuminated by the Gaussian beam for the first time. The theory does not use much approximation in the process of mathematical analysis and can better illustrate the optical bottle beam evolutions at any positions. With the derived expression, the three-dimensional (3D) longitudinal and transverse intensity profiles of the optical bottle beam are simulated numerically. The numerical calculations have been confirmed by the experimental results.

Effect of elliptical manufacture error of an axicon on the diffraction-free beam patterns

Based on the generalized Huygens-Fresnel diffraction integral theory and the stationary-phase method, we analyze the influence on diffraction-free beam patterns of an elliptical manufacture error in an axicon. The numerical simulation is compared with the beam patterns photographed by using a CCD camera. Theoretical simulation and experimental results indicate that the intensity of the central spot decreases with increasing elliptical manufacture defect and propagation distance. Meanwhile, the bright rings around the central spot are gradually split into four or more symmetrical bright spots. The experimental results fit the theoretical simulation very well. (C) 2008 Society of Photo-Optical Instrumentation Engineers.

Three-photon absorption-induced fluorescence and optical limiting effects in a fluorene derivative

This paper reports on the steady-state fluorescence, three- photon absorption-induced fluorescence emission and subsequently induced optical limiting behaviour of a fluorene derivative with D-pi-D structural motifs. The lifetime of the steady-state fluorescence is 0.903 ns. Large optical limiting behaviour induced by 3PA has also been demonstrated, and the nonlinear absorption coefficient gamma derived from 3PA fitting curves is 5.92 x 10(-20) cm(3)/W-2 and the corresponding molecular 3PA cross-section sigma(3)' is 1.14 x 10(-76) cm(6) s(2).

Preparation, characterization and gas sensing properties of lead tetra-(tert-butyl)-5,10,1 5,20-tetraazaporphyrin spin-coating films

A spin-coated film of lead tetra-(tert-butyl)-5,10,15,20-tetraazaporphyrin complex (PbTAP(t-Bu)(4)) was obtained and characterized by IR spectra, absorption spectra and atomic force microscopy. The response and recovery characteristics of the film to NH3, NO2 and C2H5OH vapor were investigated at room temperature. In addition, the reversibility and stability of the film to NH3 were also studied. The results indicate that the PbTAP(t-Bu)(4) derivative can be exploited as an NH3 sensor at room temperature. (c) 2007 Elsevier B.V. All rights reserved.

A feasible approach to optical-electrical hybrid data storage using phase change material

We present our experimental results supporting optical-electrical hybrid data storage by optical recording and electrical reading using Ge2Sb2Te5as recording medium. The sheet resistance of laser- irradiated Ge2Sb2Te5. lms exhibits an abrupt change of four orders of magnitude ( from 10 7 to 10 3./ sq) with increasing laser power, current- voltage curves of the amorphous area and the laser- crystallized dots, measured by a conductive atomic force microscope ( C- AFM), show that their resistivities are 2.725 and 3.375 x 10- 3., respectively, the surface current distribution in the. lms also shows high and low resistance states. All these results suggest that the laser- recorded bit can be read electrically by measuring the change of electrical resistivity, thus making optical electrical hybrid data storage possible.

Structural change of laser-irradiated Ge2Sb2Te5 films studied by electrical property measurement

Sheet resistance of laser-irradiated Ge2Sb2Te5 thin films prepared by magnetron sputtering was measured by the four-point probe method. With increasing laser power the sheet resistance undergoes an abrupt drop from 10(7) to 10(3) Omega/square at about 580 mW. The abrupt drop in resistance is due to the structural change from amorphous to crystalline state as revealed by X-ray diffraction (XRD) study of the samples around the abrupt change point. Crystallized dots were also formed in the amorphous Ge2Sb2Te5 films by focused short pulse laser-irradiated, the resistivities at the crystallized dots and the non-crystallized area are 3.375 x 10(-3) and 2.725 Omega m, sheet resistance is 3.37 x 10(4) and 2.725 x 10(7) Omega/square respectively, deduced from the I-V Curves that is obtained by conductive atomic force microscope (C-AFM). (C) 2008 Elsevier B.V. All rights reserved.

Reversible Resistance Switching Effect in Amorphous Ge1Sb4Te7 Thin Films without Phase Transformation

We demonstrate a reversible resistance switching effect that does not rely on amorphous-crystalline phase transformation in a nanoscale capacitor-like cell using Ge1Sb4Te7 films as the working material. The polarity and amplitude of the applied electric voltage switches the cell resistance between low- and high-resistance states, as revealed in the current-voltage characteristics of the film by conductive atomic force microscopy (CAFM). This reversible SET/RESET switching effect is induced by voltage pulses and their polarity. The change of electrical resistance due to the switching effect is approximately two orders of magnitude.

Low-Power Super-resolution Readout with Antimony Bismuth Alloy Film as Mask layer

Sb-Bi alloy films are proposed as a new kind of super-resolution mask layer with low readout threshold power. Using the Sb-Bi alloy film as a mask layer and SiN as a protective layer in a read-only memory disc, the super-resolution pits with diameters of 380 nm are read out by a dynamic setup, the laser wavelength is 780 nm and the numerical aperture of pickup lens is 0.45. The effects of the Sb-Bi thin film thickness, laser readout power and disc rotating velocity on the readout signal are investigated. The results show that the threshold laser power of super-resolution readout of the Sb-Bi mask layer is about 0.5 mW, and the corresponding carrier-to-noise ratio is about 20 dB at the film thickness of 50 nm. The super-resolution mechanism of the Sb-Bi alloy mask layer is discussed based on its temperature dependence of reflection.