Characterization of Ga N_x As_(1 - x) Alloy Grownon Ga As by Molecular Beam Epitaxy

集成光电子学国家重点实验室基金,国家863计划,国家自然科学基金,中科院项目

Influence of open-tube Ga diffusion on the characteristics for thyristor

Open-tube Ga diffusion into a SiO2/Si structure was used for fabrication of the high speed thyristor. The advantages of open-tube Ga diffusion are as follows; it is easier to operate and easier to control the profile of the Ga concentration during processing, a clean surface, which is free from alloy spots can be obtained, this technique ensures to improve the on-state characteristics and dynamic characteristics.

Methods to tune the electronic states of self-organized InAs/GaAs quantum dots

After capping InAs islands with a thin enough GaAs layer, growth interruption has been introduced. Ejected energy of self-organized InAs/GaAs quantum dots has been successfully tuned in a controlled manner by changing the thickness of GaAs capping layer and the time of growth interruption and InAs layer thickness. The photoluminescence (PL) spectra showing the shift of the peak position reveals the tuning of the electronic states of the QD system. Enhanced uniformity of Quantum dots is observed judging from the decrease of full width at half maximum of FL. Injection InAs/GaAs quantum dot lasers have been fabricated and performed on various frequencies. (C) 2000 Published by Elsevier Science B.V. All rights reserved.

The enhancement of diffusion by strain of InAs quantum dots in a GaAs matrix

We investigate the annealing behavior of Photoluminescence (PL) from self-assembled InAs quantum dots (QDs) with different thicknesses GaAs cap layers. The diffusion introduced by annealing treatment results in a blue-shift of the QD PL peak, and a decrease in the integrated intensity. The strain present in QDs enhances the diffusion, and the QDs with the cap layers of different thicknesses will experience a strain of different strength. This can lend to a, better understanding of the larger blue-shift of the PL peak of the deeper buried QDs, and the different variance of the full width at half maximum of the luminescence from QDs with the cap layers of different thicknesses.

由QCD求和规则计算s夸克质量

简要回顾了量子色动力学求和规则在计算s夸克质量方面的应用。结合Dominguez,Gend和Paver的工作,重新考虑渐近自由阈以下的谱函数后,计算了s夸克的质量,得到s夸克的跑动质量-ms(1 GeV)=219 MeV。讨论了影响计算结果精度的可能因素。

辐射基因治疗在肿瘤治疗中的研究现状

目前肿瘤基因治疗尚存在许多问题,距临床应用还有相当的距离,但是在传统的放疗、化疗和手术治疗的基础上,辐射与基因治疗的有机结合在肿瘤治疗中却显示出可喜的前景。综述了近年来这一领域的研究进展,探讨了这一疗法对肿瘤治疗的应用前景。