Weak epitaxy growth of organic semiconductor thin films

The fabrication of organic semiconductor thin films is extremely important in organic electronic devices. This tutorial review-which should particularly appeal to chemists and physicists interested in organic thin-film growth, organic electronic devices and organic semiconductor materials-summarizes the method of weak epitaxy growth (WEG) and its application in the fabrication of high quality organic semiconductor thin films.

High mobility vanadyl-phthalocyanine polycrystalline films for organic field-effect transistors

The organic films of vanadyl-phthalocyanine (VOPc) compounds showed weak epitaxy growth (WEG) behavior on thin ordered para-sexiphenyl (p-6P) layer with high substrate temperature. The WEG of VOPc molecules standing up on the p-6P layer leaded to high in-plane orientation and their layer-by-layer growth behavior. In consequence, high quality VOPc films were obtained, which were consisted of lamellar crystals. Organic field-effect transistors with VOPc/p-6P films as active layers realized high mobility of above 1 cm(2)/V s. This result indicated that nonplanar compounds can obtain a device performance better than planar compounds, therefore, it may provide a rule to find disklike organic semiconductor materials.

Recent progresses of Si-based photonics in chinese main land

Si-based photonic materials and devices, including SiGe/Si quantum structures, SOI and InGaAs bonded on Si, PL of Si nanocrystals, SOI photonic crystal filter, Si based RCE (Resonant Cavity Enhanced) photodiodes, SOI TO (thermai-optical) switch matrix were investigated in Institute of Serniconductors, Chinese Academy of Sciences. The main results in recent years are presented in the paper. The mechanism of PL from Si NCs embedded in SiO2 matrix was studied, a greater contribution of the interface state recombination (PL peak in 850 similar to 900 nm) is associated with larger Si NCs and higher interface state density. Ge dots with density of order of 10(11) cm(-2) were obtained by UHV/CVD growth and 193 nm excimer laser annealing. SOI photonic crystal filter with resonant wavelength of 1598 nm and Q factor of 1140 was designed and made. Si based hybrid InGaAs RCE PD with eta of 34.4% and FWHM of 27 nut were achieved by MOCVD growth and bonding technology between InGaAs epitaxial and Si wafers. A 16x16 SOI optical switch matrix were designed and made. A new current driving circuit was used to improve the response speed of a 4x4 SOI rearrangeable nonblocking TO switch matrix, rising and failing time is 970 and 750 ns, respectively.

Small-signal and large-signal performance test of high-speed optoelectronics devices

This paper presents measurement methods for determining the reflection coefficients and frequency responses of semiconductor laser diodes, photodiodes, and EA modulator chips. A novel method for determining the intrinsic frequency responses of laser diodes is also proposed, and applications of the developed measurement methods are discussed. We demonstrate the compensation of bonding wire on the capacitances of both the submount and the laser diode, and present a method for estimating the potential modulation bandwidth of TO packaging technique. Initial study on removing the effects of test fixture on large-signal performances of optoelectronic devices at high data rate is also given.

Theoretical analysis of the bandgap for the intermixed GaInP/AlGaInP quantum wells

Compositional distribution of the quantum well and barrier after quantum well intermixing for GaInP/AlGaInP system was theoretically analyzed on the basis of atom diffusion law. With the compositional distribution result, the valence subband structure of the intermixed quantum well was calculated on the basis of 6x6 Luttinger-Kohn Hamiltonian, including spin-orbit splitting effects. TO get more accurate results in the calculation, a full 6-band problem was solved without axial approximation, which had been widely used in the Luttinger-Kohn model to simplify the computational efforts, since there was a strong warping in the GaInP valence band. At last, the bandgap energy of the intermixed quantum well was obtained and the calculation result is of much importance in the analysis of quantum well intermixing experiments.

Calculation of valence subband structures for strained GaInP/AlGaInP quantum wells without axial approximation

Usually in the calculation of valence subband structure for III-V direct bandgap material, axial approximation had been used in the Luttinger-Kohn model to simplify the computational efforts. In this letter, the valence subband structure for the GaInP/AlGaInP strained and lattice-matched quantum wells was calculated without axial approximation, on the basis of 6x6 Luttinger-Kohn Hamiltonian including strain and spin-orbit splitting effects. The numerical simulation results were presented with help of the finite-difference methods. The calculation results with/without axial approximation were compared and the effect of axial approximation on the valence subband structure was discussed in detail. The results indicated that there was a strong warping in the GaInP valence band, and axial approximation can lead to an error when k was not equal to zero, especially for compressively strained and lattice-matched GaInP/AlGaInP quantum wells.

Influence of mode symmetry on quality factors of degenerate states in microlasers with an equilateral triangle resonator

Modes in equilateral triangle resonator (ETR) are analyzed and classified according to the irreducible representations of the point group C-3v., Both the analytical method based on the far field emission and the numerical method by FDTD technique are used to calculate the quality factors (Q-factors) of the doubly degenerate states in ETR. Results obtained from the two methods are in reasonable agreement. Considering the different symmetry properties of the doubly degenerate eigenstates, we also discuss the ETR joined with an output waveguide at one of the vertices by FDTD technique and the Pade approximation. The variation of Q-factors versus width of output waveguide is analyzed. The numerical results show that doubly degenerate eigenstates of TM0.36 and TM0.38 whose wavelengths are around 1.5 mu m in the resonator with side-length of 5 mu m have the Q-factors larger than 1000 when the width of the output waveguide is smaller than 0.4 mu m. When the width of the output waveguide is set to 0.3 mu m, the symmetrical states that are more efficiently coupled to output waveguide have Q-factors about 8000, which are over 3 times larger than those of asymmetric state.

有机／无机杂化材料的自组装表征及应用

杂化的纳米尺寸的有机／无机化合物开辟了材料科学的新纪元。作为新型功能材料，杂化的有机／无机杂化材料由于在光学、电子、机械、防护涂层、催化、传感器、生物等方面有潜在的应用前景而在材料科学领域引起广泛关注。杂多酸（POMs）作为一种重要的无机化合物，有特异的纳米尺寸结构，优越的物理化学性质和广泛应用价值，因此多酸化合物功能材料的研究引起人们足够的重视。最近，人们把更多的注意力集中到杂化的有机／无机杂化材料范围内，如何更有序的组装杂多酸，因为它们有着更有趣的电、磁、氧化还原和光学性质。1．在4-氨基苯甲酸修饰的玻碳电极表面，我们用层层组装方法制备了六钒取代的理杂多酸（PW6V6）多层膜。表面等离子（SP）技术和循环伏安（CV）法对多层膜进行了表征。结果表明，多层膜生长均匀，平均厚度为2.8nm，并且研究了多层膜对亚硝酸根伽02一）和浪酸根（BrO3-）的催化还原活性。2．研究了通过静电吸附作用，P2W17Fe和QPvP-Os交替组装多层膜。循环伏安（CV），电化学交流阻抗谱（EIS）和紫外一可见光谱（UV－vis）研究结果表明了这种多层膜是均一稳定的。多层膜对H2O2，BrO3-和NO2-有很高的催化活性。特别是EIS成功地监测多层膜的形成过程。随着层数增长，电子传输阻抗Rc，线性增加，氧化还原电对Fe（CN）63/4的电子传输受到抑制，这进一步证实了多层膜的均一性。3，首次在4-氨基苯甲酸修饰的玻碳电极表面成功地构建了含杂多酸P2W15V3的多层膜。值得注意的是，该多层膜对BrO3-和NO2-的还原有显著的电催化活性，而且由于过渡金属钒在P2W15V3起催化作用而有很低的过电位。另外，多层膜中QPVP-O5聚合物的Os中心在抗坏血酸氧化时的催化活性仍然存在，而且通过最外层的调整，多巴胺和抗坏血酸能被分别检测，所以在多巴胺存在时它可用作检测抗坏血酸的电化学传感器。4．迄今为止，人们把更多的注意力集中在杂多酸多层膜的制备，电化学和电催化活性的研究，对杂多酸多层膜功能材料的研究却很少，我们首次够构造了发光的杂多酸多层膜，紫外可见光谱，循环伏安，电化学阻抗技术和荧光光谱证明多层膜生长均匀，室温下，多层膜的发光性能显示Eu3+的特征发射峰是5D0→7Fj（j=1，2，3，4）的跃迁。电化学阻抗谱被成功得应用于监测多层膜的沉积过程。我们发现随多层膜的逐步形成，半圆直径有规律地长大。而且，电荷迁移电阻Rc，随双层数线性增长。可以认为多层膜在基底电极上以非常均匀规律的方式沉积，Fe（CN）63/4氧化还原电对的氧化还原反应逐步被多层膜抑制。5．我们用层层组装方法成功构造了金纳米粒子多层膜，紫外可见光谱，循环伏安和原子力显微技术表征了多层膜的形成，金纳米粒子粒径大约14nm，表面粗糙度6.43nm。

High-performance dye-sensitized solar cells based on solvent-free electrolytes produced from eutectic melts

Low-cost excitonic solar cells based on organic optoelectronic materials are receiving an ever-increasing amount of attention as potential alternatives to traditional inorganic photovoltaic devices. In this rapidly developing field, the dye-sensitized solar cell(1) (DSC) has achieved so far the highest validated efficiency of 11.1% (ref. 2) and remarkable stability(3).

Synthesis of Aromatic Oxide-Oxadiazoles Containing Pyridine Ring and Study on Their Spectral Properties

In order to explore new highly organic electroluminescent materials, six symmetrical aromatic oxide-oxadiazoles containing pyridine ring 4a similar to 4f were synthesized through cyclization of substituted benzoic acid (2) with 2,6-dihydrazide pyridine (3) by "one-pot" method in POCl3. Their structures were confirmed by MS, IR, H-1 NMR techniques and elemental analysis. The fluorescence spectra of the target compounds showed that the A,m ranged from 347 to 507 nm, and the maximum A,m were close to 384 nm, which showed that these compounds have good fluorescence with strong fluorescence intensity. When the 5-Br group was introduced into the aromatic ring (4e and 4f), the fluorescent emission wavelength took place Einstein shift, and the fluorescent intensity decreased a little. Using quinine bisulphate as a reference, the fluorescence quantum yields were all tested, and the introduction of 5-Br group had no visible effect on fluorescence quantum yield.

A novel 2D arsenic vanadate network grafted with a transition metal complex: [Cu(phen)][(VV4As2O19)-V-IV-As-V]center dot 0.5H(2)O

A novel organic-inorganic hybrid compound [Cu(phen)](2)[(VV4As2O19)-V-IV-As-V-O-V].0.5H(2)O 1 has been hydrothermally synthesized. Its structure, determined by single crystal X-ray diffraction, exhibits an unusual two-dimensional arsenic vanadate layered network grafted with the [Cu(phen)](2+) complex. The chelating phen ligands project perpendicularly beyond the inorganic layer. Variable temperature magnetic susceptibility studies indicate that both ferro- and antiferro-magnetic interactions exist in 1.

Characteristics of band structures in 1D photonic crystals containing alternate left-right handed materials

This work investigated analytically the band structure of photonic crystals (PCs) with alternate layers of left and right-handed materials in one-dimension. It was found that, under certain conditions, new peculiar band structures not seen in all right-handed material PCs appeared. We transformed the analytic dispersion relation into two cosine terms, and obtained an interesting band structure using the new form of dispersion equation. Conditions for obtaining such peculiar band structure were given. (c) 2005 Elsevier Ltd. All rights reserved.

Fabrication of photonic crystals on several kinds of semiconductor materials by using focused-ion beam method

In this paper, we introduced the fabrication of photonic crystals on several kinds of semiconductor materials by using focused-ion beam machine, it shows that the method of focused-ion beam can fabricate two-dimensional photonic crystal and photonic crystal device efficiently, and the quality of the fabricated photonic crystal is high. Using the focused-ion beam method, we fabricate photonic crystal wavelength division multiplexer, and its characteristics are analyzed. (c) 2007 Elsevier B.V. All rights reserved.

Fabrication of photonic crystal on semiconductor materials by using focued ion-beam

A method of manufacturing two-dimensional photonic crystals on several kinds of semiconductor materials in near infrared region by a focused ion beam is introduced, and the corresponding fabrication results are presented and show that the obtained parameters of fabricated photonic crystals are identical with the designed ones. Using the tunable laser source, the spectra of the fabricated passive photonic crystal and the active photonic crystal are measured. The experiment demonstrates that the focused ion-beam can be used to fabricate the perfect two-dimensional photonic crystals and their devices.