CONSTRUCTION AND APPLICATIONS OF A DUAL MASS-SELECTED LOW-ENERGY ION-BEAM SYSTEM

A direct ion beam deposition system designed for heteroepitaxy at a low substrate temperature and for the growth of metastable compounds has been constructed and tested. The system consists of two mass-resolved low-energy ion beams which merge at the target with an incident energy range 50-25 000 eV. Each ion beam uses a Freeman ion source for ion production and a magnetic sector for mass filtering. While a magnetic quadrupole lens is used in one beam for ion optics, an electrostatic quadrupole lens focuses the other beam. Both focusing approaches provide a current density more than 100-mu-A/cm2, although the magnetic quadrupole gives a better performance for ion energies below 200 eV. The typical current of each beam reaches more than 0.3 mA at 100 eV, with a ribbon beam of about 0.3-0.5 x 2 cm2. The target is housed in an ultrahigh vacuum chamber with a base pressure of 1 x 10(-7) Pa and a typical pressure of 5 x 10(-6) Pa when a noncondensable beam like argon is brought into the chamber. During deposition, the target can be heated to 800-degrees-C and scanned mechanically with an electronic scanning control unit. The dual beam system has been used to grow GaN using a Ga+ and a N+ beam, and to study the oxygen and hydrogen ion beam bombardment effects during carbon ion beam deposition. The results showed that the simultaneous arrival of two beams at the target is particularly useful in compound formation and in elucidation of growth mechanisms.

Passive Q-switching of diode-pumped Yb:YAG microchip laser with ion-implanted GaAs

We reported a passive Q-switched diode laser pumped Yb:YAG microchip laser with an ion-implanted semi-insulating GaAs wafer. The wafer was implanted with 400-keV As^(+) in the concentration of 10^(16) ions/cm^(2). To decrease the non-saturable loss, we annealed the ion-implanted GaAs at 500 oC for 5 minutes and coated both sides of the ion-implanted GaAs with antireflection (AR) and highreflection (HR) films, respectively. Using GaAs wafer as an absorber and an output coupler, we obtained 52-ns pulse duration of single pulse.

Study of the aberrations of the IMP heavy ion microbeam irradiation system

A high energy heavy ion microbeam irradiation system is constructed at the Institute of Modern Physics (IMP) of the Chinese Academy of Sciences (CAS). A quadrupole focusing system, in combination with a series of slits, has been designed here. The IMP microbeam system is described in detail. The intrinsic and parasitic aberrations associated with the magnets are simulated. The ion beam optics of this microbeam system is investigated systematically. Then the optimized initial beam parameters are given for high spatial resolution and high hitting rates.

Emittance estimation by an ion optical element with variable focusing strength and a viewing target

The emittance of an extracted ion beam can be estimated to first order by a series of three linear independent profile measurements. This estimation is restricted to the evaluation of an upper limit of the emittance value for a homogeneous, nonfilamented beam. The beam is assumed to be round, respectively elliptical, without any structure of the intensity distribution, no space charge has been assumed for the drifting beam, and the optics is assumed to be linear. Instead of using three different drift sections, a linear focusing element with three different focusing strengths can be used. Plotting the beam radius as function of focusing strength, three independent solutions can be used to calculate the Twiss parameters alpha, beta, and gamma and furthermore the emittance epsilon. Here we describe the measurements which have been performed with the SECRAL ion source at Institute of Modern Physics Lanzhou.

Shock Tube Studies on Recombination Kinetics of Sodium Ion with Electron

The ionization kinetics of sodium diluted in argon is studied in a shock tube, in which the test gas mixture is ionized by a reflected shock wave and subsequently quenched by a strong rarefaction wave. A Langmuir electrostatic probe is used to monitor the variation of the ion number density at the reflection shock wave region. The working state of the probe is in the near fi-ee fall region and a correction for reduction of the probe current due to elastic scattering in the probe sheath is introduced. At the temperature range of 800 to 2600 K and in the ambience of argon gas, the three-body recombination rate coefficient of the sodium ion with electron is determined: 3.43 x 10(-14)T(-3.77) cm(6).s(-1).

Metallographic Sample Prepared by Ion Beam Etching

Ion beam etching technique was used to reveal the metallograhpic microstructure and interface morphology of electroplating chromium coating, in particular, whose substrate surface layer was treated in advance by laser quenching. Chemical etchings were, also conducted for comparison. The reveal microstructures were observed and analyzed by scanning electron microscopy. The results show that ion beam etching can reveal well the whole microstructures of composite coating-substrate materials.

Arc Voltage Fluctuation in DC Laminar and Turbulent Plasma Jets Generat Ion

Arc voltage fluctuations in a direct current (DC) non-transferred arc plasma generator are experimentally studied, in generating a jet in the laminar, transitional and turbulent regimes. The study is with a view toward elucidating the mechanism of the fluctuations and their relationship with the generating parameters, arc root movement and flow regimes. Results indicate that the existence of a 300 Hz alternating current (AC) component in the power supply ripples does not cause the transition of the laminar plasma jet into a turbulent state. There exists a high frequency fluctuation at 4 kHz in the turbulent jet regime. It may be related to the rapid movement of the anode attachment point of the arc.

Numerical simulation of an adaptive optics system with laser propagation in the atmosphere

A comprehensive model of laser propagation in the atmosphere with a complete adaptive optics (AO) system for phase compensation is presented, and a corresponding computer program is compiled. A direct wave-front gradient control method is used to reconstruct the wave-front phase. With the long-exposure Strehl ratio as the evaluation parameter, a numerical simulation of an AO system in a stationary state with the atmospheric propagation of a laser beam was conducted. It was found that for certain conditions the phase screen that describes turbulence in the atmosphere might not be isotropic. Numerical experiments show that the computational results in imaging of lenses by means of the fast Fourier transform (FFT) method agree well with those computed by means of an integration method. However, the computer time required for the FFT method is 1 order of magnitude less than that of the integration method. Phase tailoring of the calculated phase is presented as a means to solve the problem that variance of the calculated residual phase does not correspond to the correction effectiveness of an AO system. It is found for the first time to our knowledge that for a constant delay time of an AO system, when the lateral wind speed exceeds a threshold, the compensation effectiveness of an AO system is better than that of complete phase conjugation. This finding indicates that the better compensation capability of an AO system does not mean better correction effectiveness. (C) 2000 Optical Society of America.

Gal(1-x)Mn(1-x)Sb Grown on GaSb with Mass-Analyzed Low-Energy Dual Ion Beam Deposition

The Ga1-xMnxSb samples were fabricated by the implantation of Mn ions into GaSb (1 0 0) substrate with mass-analyzed low-energy dual ion beam deposition system, and post-annealing. Auger electron spectroscopy depth profile of the Ga1-xMnxSb samples showed

Effects of Noise and Detection Error in a Dynamic Adaptive Optics System

It is well known that noise and detection error can affect the performances of an adaptive optics (AO) system. Effects of noise and detection error on the phase compensation effectiveness in a dynamic AO system are investigated by means of a pure numerical simulation in this paper. A theoretical model for numerically simulating effects of noise and detection error in a static AO system and a corresponding computer program were presented in a previous article. A numerical simulation of effects of noise and detection error is combined with our previous numeral simulation of a dynamic AO system in this paper and a corresponding computer program has been compiled. Effects of detection error, readout noise and photon noise are included and investigated by a numerical simulation for finding the preferred working conditions and the best performances in a practical dynamic AO system. An approximate model is presented as well. Under many practical conditions such approximate model is a good alternative to the more accurate one. A simple algorithm which can be used for reducing the effect of noise is presented as well. When signal to noise ratio is very low, such method can be used to improve the performances of a dynamic AO system.

Relation between Stabilization Energy, Crystal Field Coefficient and the Magnetic Exchange Interaction for Tb3+ Ion

Based on a single ion model, Hamiltonian of the simplest form about magnetocrystalline anisotropy for Tb3+ ion was solved by using the numerical method. The relation between the stabilization energy, crystal field coefficient B-2(0) and the magnetic exchange interaction was studied as temperature approaches to 0 K. The results show that the stabilization energy contributed by Tb3+ is linear with crystal field coefficient B-2(0) approximately, but it is insensitive to the change of magnetic exchange interaction for the strong magnetic substances such as TbCo5, Tb2Co17 and Tb2Fe14B compounds.