DPIV and Interferometry Technique for Velocity Field and Concentration Fields Measurement in Crystal Growth

The property of crystal depends seriously on the solution concentration distribution near the growth surface of a crystal. However, the concentration distributions are affected by the diffusion and convection of the solution. In the present experiment, the two methods of optical measurement are used to obtained velocity field and concentration field of NaClO₃ solution. The convection patterns in sodium chlorate (NaClO₃) crystal growth are measured by Digital Particle image Velocimetry (DPIV) technology. The 2-dimentional velocity distributions in the solution of NaClO3 are obtained from experiments. And concentration field are obtained by a Mach-Zehnder interferometer with a phase shift servo system. Interference patterns were recorded directly by a computer via a CCD camera. The evolution of velocity field and concentration field from dissolution to crystallization are visualized clearly. The structures of velocity fields were compared with that of concentration field.

Crystal and molecular structure of the complex of methoxycarbonylethyltin trichloride with salicylidene-m-toluidine

The synthesis and properties of the title complex CH3OCOCH2CH2SnCl3.2-HOC6H4CH=NC6H4-3'-CH3 are described. It crystallizes from benzene in the monoclinic space group P2(1/n) with unit cell dimensions a=10.326 (C),b=6.815(8), c=12.931(6) Angstrom, beta =111.52(3,)degrees, V=2088.7(1) Angstrom (3), Z=4, F(000) =1040, mu =16.31 cm(-1), Dc=1. 67g/cm(3) final R factor is 0.037 for 3177 observed reflections, 1 greater than or equal to3 sigma (1(0)). The tin atom in the structure of the complex exists in a distored octahedral geometry defined by three Cl atoms, the C and O atoms of a chelating methoxycarbonylethyl. group as well as an O atom derived from the Schiff base ligand.

A new expression of hardening coefficients for fcc-crystal and calibration of the material constants

In order to describe the effect of latent hardening on the macro-plastic behavior of foc-crystal, a new expression for hardening coefficient is proposed in which there are 12 material constants, each having clear physical meaning. And a method of material constant calibration is suggested and used to determine the material constants of copper and aluminum crystal. The simulated load-elongation curves along various crystallographic orientations are comparable with the experimental ones.

Guiding and confining fast electrons by transient electric and magnetic fields with a plasma inverse cone

The fast electron propagation in an inverse cone target is investigated computationally and experimentally. Two-dimensional particle-in-cell simulation shows that fast electrons with substantial numbers are generated at the outer tip of an inverse cone target irradiated by a short intense laser pulse. These electrons are guided and confined to propagate along the inverse cone wall, forming a large surface current. The propagation induces strong transient electric and magnetic fields which guide and confine the surface electron current. The experiment qualitatively verifies the guiding and confinement of the strong electron current in the wall surface. The large surface current and induced strong fields are of importance for fast ignition related researches.

Growth of excellent-quality Nd : LuVO4 single crystal and laser properties

High-quality Nd:LuVO4 single crystal was successfully grown by Czochralski method. The assessment of the crystalline quality by the chemical etching method and Conoscope image was reported. The absorption spectra from 300 to 1000 nm and emission spectra from 960 to 1450 nm of Nd: LuVO4 were measured. Laser performance was achieved with Nd:LUVO4 crystal for the transition of F-4(3/2) -> I-4(11/2) (corresponding wavelength 1065.8 nm) in an actively Q-switched operation, and the average output power reached 5.42 W at a pulse repetition frequency (PRF) of 40 kHz under pump power of 18 W, giving an optical conversion efficiency of 30.1%. The pulse energy and peak power reached 138 mu J and 16.2 kW at PRF of 25 kHz under pump power of 14.2 W, and the pulse duration was 8.5 ns. (c) 2005 Elsevier B.V. All rights reserved.

Growth of high quality Cr, Yb codoped gadolinium gallium garnet (Gd3Ga5O12) crystal and its spectral properties

The Cr(0.1%),Yb(10%):GGG crystals have been grown by the Czochralski method. The chemical composition is: Yb0.33Gd2.47Cr0.005Ga5.2O12. There are no observed Yb3+ ions substituting Ga3+ ions, just like that of Yb:GGG crystals. The defects in Cr,Yb:GGG crystal were also investigated. The absorption and emission spectra of Cr,Yb:GGG crystal at room temperature have been measured. The 02 and H-2 annealing effect of Cr,Yb:GGG crystal have been compared. Cr3+ can greatly weak the visible luminescence of this crystal. The Cr-Yb-codoped crystals may be potential materials for compact, efficient, high stability LD pumped solid state lasers. (C) 2006 Elsevier B.V. All rights reserved.

Spin-polarized transport in one-dimensional waveguide structures with spatially-periodic electronic and magnetic fields

We investigate theoretically the spin-polarized transport in one-dimensional waveguide structure with spatially-periodic electronic and magnetic fields. The interplay of the spin-orbit interaction and in-plane magnetic field significantly modifies the spin-dependent transmission and the spin polarization. The in-plane magnetic fields increase the strength of the Rashba spin-orbit coupling effect for the electric fields along y axis and decrease this effect for reversing the electric fields, even counteract the Rashba spin-orbit coupling effect. It is very interesting to find that we may deduce the strength of the Rashba effect through this phenomenon. (c) 2005 Elsevier Ltd. All rights reserved.

Space grown semi-insulating gallium arsenide single crystal and its application

Low noise field effect transistors and analogue switch integrated circuits (ICs) have been fabricated in semi-insulating gallium arsenide (SI-GaAs) wafers grown in space by direct ion-implantation. The electrical behaviors of the devices and the ICs have surpassed those fabricated in the terrestrially grown SI-GaAs wafers. The highest gain and the lowest noise of the transistors made from space-grown SI-GaAs wafers are 22.8 dB and 0.78 dB, respectively. The threshold back-gating voltage of the ICs made from space-grown SI-GaAs wafers is better than 8.5 V The con-elation between the characterizations of materials and devices is studied systematically. (C) 2002 COSPAR. Published by Elsevier Science Ltd. All rights reserved.

Space grown semi-insulating gallium arsenide single crystal and its application

Low noise field effect transistors and analogue switch integrated circuits (ICs) have been fabricated in semi-insulating gallium arsenide (SI-GaAs) wafers grown in space by direct ion-implantation. The electrical behaviors of the devices and the ICs have surpassed those fabricated in the terrestrially grown SI-GaAs wafers. The highest gain and the lowest noise of the transistors made from space-grown SI-GaAs wafers are 22.8 dB and 0.78 dB, respectively. The threshold back-gating voltage of the ICs made from space-grown SI-GaAs wafers is better than 8.5 V The con-elation between the characterizations of materials and devices is studied systematically. (C) 2002 COSPAR. Published by Elsevier Science Ltd. All rights reserved.