Information system for ICP-AES in Windows environment

An information system for inductively coupled plasma atomic emission spectrometry (TCP-BES) in MS Windows environment was developed based on the previous work in the laboratory. The system contains the data of about 28 000 spectral lines and a function of ICP spectral simulation,so it would be very helpful for line selection. The system also contains the Kalman filter and factor analysis programmes written with MS Visual Basic(version 4.0), which can be used for spectral interference correction and peak position optimization. A large amount of real spectral scanning data of rare earth elements were included in the system for user's references. All these characteristics made the system more useful and practical.

Alternating copolymerization of carbon dioxide and propylene oxide catalyzed by (R,R)-SalenCo(III)-(2,4-dinitrophenoxy) and Lewis-basic cocatalyst

A binary catalyst system of a chiral (R,R)-SalenCo(III)(2,4-dinitrophenoxy) (salen = N,N-bis(3,5-di-tert-butylsalicylidene)-1,2-diphenylethylenediimine) in conjunction with (4-dimethylamino)pyridine (DMAP) was developed to generate the copolymerization of carbon dioxide (CO2) and racemic propylene oxide (rac-PO). The influence of the molar ratio of catalyst components, the operating temperature, and reaction pressure on the yield as well as the molecular weight of polycarbonate were systematically investigated. High yield of turnover frequency (TOF) 501.2 h(-1) and high molecular weight of 70,400 were achieved at an appropriate combination of all variables. The structures of as-prepared products were characterized by the IR, H-1 NMR, C-13 NMR measurements. The linear carbonate linkage, highly regionselectivity and almost 100% carbonate content of the resulting polycarbonate were obtained with the help of these effective catalyst systems under facile conditions.

基于同步移相技术的1/4波片快轴方位角的实时测量

提出了一种基于同步移相技术的1/4波片快轴方位角的实时测量方法。由正交光栅、光阑、检偏器组和四象限探测器实现同步移相功能。检偏器组由4个不同方位角的检偏器组成。通过检偏器组的四束光束的光强由四象限探测器同时测量。1/4波片的快轴方位角由这四光束的光强得到。由于该方法不需旋转偏振器件，从而实现的1/4波片的快轴方位角的实时测量。

基于同步移相技术的1/4波片相位延迟量的快速测量

提出了一种基于同步移相技术的1/4波片相位延迟量的快速测量方法。由正交光栅、光阑、检偏器组和四象限探测器实现同步移相功能。检偏器组由4个不同方位角的检偏器组成。通过检偏器组的四束光束的光强由四象限探测器同时测量。1/4波片的相位延迟量由这四光束的光强得到。该方法中波片的快轴不需被事先确定。另外光源光强的波动对测量结果没有影响。通过实验验证了该方法的有效性。

Opioid Withdrawal for 4 Days Prevents Synaptic Depression Induced by Low Dose of Morphine or Naloxone in Rat Hippocampal CA1 Area In Vivo

The formation of memory is believed to depend on experience- or activity-dependent synaptic plasticity, which is exquisitely sensitive to psychological stress since inescapable stress impairs long-term potentiation (LTP) but facilitates long-term depression (LTD). Our recent studies demonstrated that 4 days of opioid withdrawal enables maximal extents of both hippocampal LTP and drug-reinforced behavior; while elevated-platform stress enables these phenomena at 18 h of opioid withdrawal. Here, we examined the effects of low dose of morphine (0.5 mg kg(-1), i.p.) or the opioid receptor antagonist naloxone (1 mg kg(-1), i.p.) on synaptic efficacy in the hippocampal CA1 region of anesthetized rats. A form of synaptic depression was induced by low dose of morphine or naloxone in rats after 18 h but not 4 days of opioid withdrawal. This synaptic depression was dependent on both N-methyl-D-aspartate receptor and synaptic activity, similar to the hippocampal long-term depression induced by low frequency stimulation. Elevated-platform stress given 2 h before experiment prevented the synaptic depression at 18 h of opioid withdrawal; in contrast, the glucocorticoid receptor (GR) antagonist RU38486 treatment (20 mg kg(-1), s.c., twice per day for first 3 days of withdrawal), or a high dose of morphine reexposure (15 mg kg(-1), s.c., 12 h before experiment), enabled the synaptic depression on 4 days of opioid withdrawal. This temporal shift of synaptic depression by stress or GR blockade supplements our previous findings of potentially correlated temporal shifts of LTP induction and drug-reinforced behavior during opioid withdrawal. Our results therefore support the idea that stress experience during opioid withdrawal may modify hippocampal synaptic plasticity and play important roles in drug-associated memory. (C) 2009 Wiley-Liss, Inc.

4龄中华鲟垂体的EST分析(英文)

表达序列标签(Expressed sequencetag,EST)是鉴定基因表达规律和发现新基因的一种有效的分子生物学手段。为了能在中华鲟(Acipenser sinensis Gray)中发现与生长和生殖内分泌调控相关的基因,我们构建了中华鲟垂体的SMARTcDNA质粒文库。垂体是调节生长和生殖内分泌的重要器官。在本研究中,通过测序筛选得到了944个EST克隆,将所得EST与GenBank数据库中的序列进行比对,结果表明,802(84.96%)个克隆可以找到同源序列,共代表461个基因,其中含132个已

Kinetic study of the 2-methyl-3-methoxy-4-phenylbutanoic acid produced by oxidation of microcystin in aqueous solutions

Microcystins (MCs) are a family of related cyclic hepatotoxic heptapeptides, of which more than 70 types have been identified. The chemically unique nature of the C20 beta-amino acid, (2S, 3S, 8S, 9S)-3-amino-9-methoxy-2,6,8-trimethyl-10-phenyldeca4,6-dienoic acid (Adda), portion of the MCs has been exploited to develop a strategy to analyze the entirety. Oxidation of MCs causes the cleavage of MC Adda to form 2-methyl-3-methoxy-4-phenylbutanoic acid (MMPB). In the present study, we investigated the kinetics of MMPB produced by oxidation of the most-often-studied MC variant, MC-LR (L = leucine, R = arginine), with permanganate-periodate. This investigation allowed insight regarding the influence of the reaction conditions (concentration of the reactants, temperature, and pH) on the conversion rate. The results indicated that the reaction was second order overall and first order with respect to both permanganate and MC-LR. The second-order rate constant ranged from 0.66 to 1.35 M/s at temperatures from 10 to 30 degrees C, and the activation energy was 24.44 kJ/mol. The rates of MMPB production can be accelerated through increasing reaction temperature and oxidant concentration, and sufficient periodate is necessary for the formation of MMPB. The initial reaction rate under alkaline and neutral conditions is higher than that under acidic conditions, but the former decreases faster than the latter except under weakly acidic conditions. These results provided new insight concerning selection of the permanganate-periodate concentration, pH, and temperature needed for the oxidation of MCs with a high and stable yield of MMPB.

Zero biased Ge-on-Si photodetector with a bandwidth of 4.72 GHz at 1550 nm

High quality Ge was epitaxially grown on Si using ultrahigh vacuum/chemical vapor deposition (UHV/CVD). This paper demonstrates efficient germanium-on-silicon p-i-n photodetectors with 0.8 mu m Ge, with responsivities as high as 0.38 and 0.21 A/W at 1.31 and 1.55 mu m, respectively. The dark current density is 0.37 mA/cm(2) and 29.4 mA/cm(2) at 0 V and a reverse bias of 0.5 V. The detector with a diameter of 30 mu m, a 3 dB-bandwidth of 4.72 GHz at an incident wavelength of 1550 nm and zero external bias has been measured. At a reverse bias of 3 V, the bandwidth is 6.28 GHz.

Systematic investigation on the influence of the As-4 flux on the magnetic property of (In,Cr)As quantum dots

We study the structure, optical and magnetic characteristics of self-assembled (In,Cr) As diluted magnetic semiconductor quantum dots as a function of the As-4 flux. Increasing the surface energy by increasing the As4 pressure leads to a smaller number of larger dots for a higher As-4 flux. The remanent magnetization measured at 5K also increases with increasing As-4 flux, which is attributed to the enhancement of the effective Cr content due to the As-4-rich condition. We explore the possibility of tailoring magnetism by controlling the As-4/In flux ratio without changing the Cr concentration. Furthermore, extremely low-density QDs have also been successfully grown. Copyright (C) EPLA, 2008

1 x 4 Ge-on-SOI PIN Photodetector Array for Parallel Optical Interconnects

High-quality Ge film was epitaxially grown on silicon on insulator using the ultrahigh vacuum chemical vapor deposition. In this paper, we demonstrated that the efficient 1 4 germanium-on-silicon p-i-n photodetector arrays with 1.0 mu m Ge film had a responsivity as high as 0.65 A/W at 1.31 mu m and 0.32 A/W at 1.55 mu m, respectively. The dark current density was about 0.75 mA/cm(2) at 0 V and 13.9 mA/cm(2) at 1.0 V reverse bias. The detectors with a diameter of 25 mu m were measured at 1550 nm incident light under 0 V bias, and the result showed that the 3-dB bandwidth is 2.48 GHz. At a reverse bias of 3 V, the bandwidth is about 13.3 GHz. The four devices showed a good consistency.

Anisotropic strain relaxation of thin Fe film on c(4 x 4) reconstructed GaAs (001) surface

National Natural Science Foundation of China 60836002 10674130 60521001;Major State Basic Research of China 2007CB924903;Chinese Academy of Sciences KJCX2.YW.W09-1

Electropolymerized poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) film on ITO glass and its application in photovoltaic device

Poly(3,4-ethylenedioxythiopliene):poly(styrene sulfonate) (PEDOT:PSS) films have been electrochemically polymerized in situ on ITO glass substrate in boron trifluoride diethyl etherate electrolyte (BFEE). Cyclic voltammograms show good redox activity and stability of the PEDOT films. These films had been directly used to fabricate organic-inorganic hybrid solar cells with the structure of ITO/PEDOT/ZnO:MDMC-PPV/Al. The solar cells made of electrochemically polymerized films exhibit higher energy conversion efficiencies compared with that prepared by the spin-coating method, and the highest value is 0.33%. This in-situ electropolymerized method effectively simplifies fabricating procedures and may blaze a facile and economical route for producing high-efficiency solar cells.

Strain-Compensated InGaAs/InAlAs Quantum Cascade Detector of 4.5 mu m Operating at Room Temperature

We present a strain-compensated InP-based InGaAs/InAlAs photovoltaic quantum cascade detector grown by solid source molecular beam epitaxy. The detector is based on a vertical intersubband transition and electron transfer on a cascade of quantum levels which is designed to provide longitudinal optical phonon extraction stairs. By careful structure design and growth, the whole epilayer has a residual strain toward InP substrate of only -2.8 x 10(-4). A clear narrow band detection spectrum centered at 4.5 mu m has been observed above room temperature for a device with 200 x 200 mu m(2) square mesa.