Spectra of identified high-p(T) pi(+/-) and p((p)over-bar ) in Cu + Cu collisions at root s(NN)=200 GeV

We report new results on identified (anti) proton and charged pion spectra at large transverse momenta (3 < p(T) < 10 GeV/c) from Cu + Cu collisions at root s(NN) = 200 GeV using the STAR detector at the Relativistic Heavy Ion Collider (RHIC). This study explores the system size dependence of two novel features observed at RHIC with heavy ions: the hadron suppression at high-p(T) and the anomalous baryon to meson enhancement at intermediate transverse momenta. Both phenomena could be attributed to the creation of a new form of QCD matter. The results presented here bridge the system size gap between the available pp and Au + Au data, and allow for a detailed exploration of the onset of the novel features. Comparative analysis of all available 200 GeV data indicates that the system size is a major factor determining both the magnitude of the hadron spectra suppression at large transverse momenta and the relative baryon to meson enhancement.

Proposal for studying N* resonances with the (p)over-barp -> (p)over-barn pi(+) reaction

A theoretical study of the (p) over barp -> (p) over barn pi(+) reaction for antiproton beam energy from 1 to 4 GeV is made by including contributions from various known N* and Delta* resonances. It is found that for the beam energy around 1.5 GeV, the contribution of the Roper resonance N-(1440)* produced by the t-channel sigma exchange dominates over all other contributions. Since such a reaction can be studied in the forthcoming PANDA experiment at the GSI Facility of Antiproton and Ion Research (FAIR), the reaction will be realistically the cleanest place for studying the properties of the Roper resonance and the best place for looking for other "missing" N* resonances with large coupling to N sigma.

Hydride Vapor Phase Epitaxy Growth of Semipolar, 10(1)over-bar(3)over-barGaN on Patterned m-Plane Sapphire

We have investigated the hydride vapor-phase epitaxy growth of (10 (1) over bar(3) over bar)-oriented GaN thick films on patterned sapphire substrates (PSSs) (10 (1) over bar0). From characterization by atomic force microscopy, scanning electron microscopy, double-crystal X-ray diffraction, and photoluminescence (PL), it is determined that the crystalline and optical qualities of (10 (1) over bar(3) over bar) GaN epilayers grown on the cylindrical PSS are better than those on the flat sapphire. However, two main crystalline orientations (10 (1) over bar(3) over bar) and (11 (2) over bar2) dominate the GaN epilayers grown on the pyramidal PSS, demonstrating poor quality. After etching in the mixed acids, these (10 (1) over bar(3) over bar) GaN films are dotted with oblique pyramids, concurrently lining along the < 30 (3) over bar2 > direction, indicative of a typical N-polarity characteristic. Defect-related optical transitions of the (10 (1) over bar(3) over bar) GaN epilayers are identified and detailedly discussed in virtue of the temperature-dependent PL. In particular, an anomalous blueshift-redshift transition appears with an increase in temperature for the broad blue luminescence due to the thermal activation of the shallow level.

Growth of (10(1)over-bar(3)over-bar) semipolar GaN on m-plane sapphire by hydride vapor phase epitaxy

The crystalline, surface, and optical properties of the (10 (1) over bar(3) over bar) semipolar GaN directly grown on m-plane sapphire substrates by hydride vapor phase epitaxy (HVPE) were investigated. It was found that the increase of V/III ratio led to high quality (10 (1) over bar(3) over bar) oriented GaN epilayers with a morphology that may have been produced by step-flow growth and with minor evidence of anisotropic crystalline structure. After etching in the mixed acids, the inclined pyramids dominated the GaN surface with a density of 2 X 10(5) cm(-2), revealing the N-polarity characteristic. In the low-temperature PL spectra, weak BSF-related emission at 3.44eV could be observed as a shoulder of donor-bound exciton lines for the epilayer at high V/III ratio, which was indicative of obvious reduction of BSFs density. In comparison with other defect related emissions, a different quenching behavior was found for the 3.29 eV emission, characterized by the temperature-dependent PL measurement. (C) 2009 Elsevier B.V. All rights reserved.

B-(*())(B)over-bar(()*()) intermediate states contribution to Gamma(4S, 5S) -> eta(b) + gamma radiative decay

In this work, we investigate the rescattering effects in the radiative decay Gamma(5S) -> eta(b) + gamma , which were suggested to be crucially important for understanding the anomalous largeness of the branching ratios B(Gamma(5S) -> Gamma(1S) + pi pi) and B(Gamma(5S) -> Gamma(1S) + eta). Our calculations show that the rescattering effects may enhance Gamma(Gamma(10860) -> eta(b) +gamma) by four orders, but the tetraquark structure does not. Recently the BABAR and CLEO collaborations have measured the mass of eta(b) and the branching ratios B(Gamma(2S) -> eta(b) +gamma), B(Gamma(3S) -> eta(b) +gamma). We hope that very soon, Gamma(10860) -> eta(b) + gamma) will be measured and it would be an ideal opportunity for testing whether the rescattering or the tetraquark structure is responsible for the anomaly of B(Gamma(5S) -> Gamma(nS) pi(+) pi(-))(n = 1, 2, 3)), i. e., the future measurements on the radiative decays of Gamma(5S) might be a touchstone of the two mechanisms.

Contributions of qqqq(q)over-bar Components to Axial Charges of Proton and N(1440)

The axial charges of the proton and N(1440) are studied in the framework of an extended constituent quark model (CQM) including qqqq (q) over bar components. The cancellation between the contributions of qqq components and qqqq (q) over bar components gives a natural explanation to the experimental value of the proton axial charge, which can not be well reproduced in the traditional CQM even after the SU (6) circle times O(3) symmetry breaking is taken into account. The experimental value of axial charge pins down the proportion of the qqqq (q) over bar component in the proton to about 20%, which is consistent with the ones given by the strong decay widths and helicity amplitudes. Besides, an axial charge for N(1440) about 1 is predicted with 30% qqqq (q) over bar component, which is obtained by the strong and electromagnetic decays.

gamma cross section in p plus p collisions at root s=200 GeV

We report on a measurement of the gamma(1S + 2S + 3S) -> e(+)e(-) cross section at midrapidity in p + p collisions at root s = 200 GeV. We find the cross section to be 114 +/- 38(stat + fit)(-24)(+23)(syst) pb. Perturbative QCD calculations at next-to-leading order in the color evaporation model are in agreement with our measurement, while calculations in the color singlet model underestimate it by 2 sigma. Our result is consistent with the trend seen in world data as a function of the center-of-mass energy of the collision and extends the availability of gamma data to RHIC energies. The dielectron continuum in the invariant-mass range near the gamma is also studied to obtain a combined yield of e(+)e(-) pairs from the sum of the Drell-Yan process and b-(b) over bar production.

Observation of an Antimatter Hypernucleus

Nuclear collisions recreate conditions in the universe microseconds after the Big Bang. Only a very small fraction of the emitted fragments are light nuclei, but these states are of fundamental interest. We report the observation of antihypertritons-comprising an antiproton, an antineutron, and an antilambda hyperon-produced by colliding gold nuclei at high energy. Our analysis yields 70 +/- 17 antihypertritons (3/Lambda(H) over bar) and 157 +/- 30 hypertritons (H-3(Lambda)). The measured yields of H-3(Lambda) (3/Lambda(H) over bar) and He-3 ((3)(He) over bar) are similar, suggesting an equilibrium in coordinate and momentum space populations of up, down, and strange quarks and antiquarks, unlike the pattern observed at lower collision energies. The production and properties of antinuclei, and of nuclei containing strange quarks, have implications spanning nuclear and particle physics, astrophysics, and cosmology.

Nonpolar m-plane thin film GaN and InGaN/GaN light-emitting diodes on LiAlO2(100) substrates

The nonpolar m-plane (1 (1) over bar 00) thin film GaN and InGaN/GaN light-emitting diodes (LEDs) grown by metal-organic chemical vapor deposition on LiAlO2 (100) substrates are reported. The LEDs emit green light with output power of 80 mu W under a direct current of 20 mA for a 400x400 mu m(2) device. The current versus voltage (I-V) characteristic of the diode shows soft rectifying properties caused by defects and impurities in the p-n junction. The electroluminescence peak wavelength dependence on injection current, for currents in excess of 20 mA, saturates at 515-516 nm. This proves the absence of polarization fields in the active region present in c-plane structures. The light output intensity versus current (L-I) characteristic of the diode exhibits a superlinear relation at low injection current caused by nonradiative centers providing a shunt path and a linear light emission zone at high current level when these centers are saturated. (c) 2007 American Institute of Physics.

Structure and magnetic characteristics of nonpolar a-plane GaN : Mn films

Diluted magnetic nonpolar GaN:Mn films have been fabricated by implanting Mn ions into unintentionally doped nonpolar a-plane (1 1 (2) over bar 0) GaN films with a subsequent rapid thermal annealing (RTA) process. The structure, morphology and magnetic characteristics of the samples were investigated by means of high-resolution x-ray diffraction (XRD), atomic force microscopy (AFM) and a superconducting quantum interference device (SQUID), respectively. The XRD analysis shows that the RTA process can effectively recover the crystal deterioration caused by the implantation process and that there is no obvious change in the lattice parameter for the as-annealed sample. The SQUID result indicates that the as-annealed sample shows ferromagnetic properties and magnetic anisotropy at room temperature.

Room-temperature ferromagnetism and in-plane magnetic anisotropy characteristics of nonpolar GaN:Mn films

Diluted magnetic nonpolar GaN Mn films have been fabricated by implanting Mn ions into nonpolar aplane (1 1 (2) over bar 0) p-type GaN films and a subsequent rapid thermal annealing process. The ferromagnetism properties of the films were studied by means of superconducting quantum interference device (SQUID). Clearly in-plane magnetic anisotropy characteristics of the sample at 10 K were revealed with the direction of the applied magnetic field rotating along the in-plane [0 0 0 1]-axis. Moreover, obvious ferromagnetic properties of the sample up to 350 K were detected by means of the temperature-dependent SQUID. (C) 2009 Elsevier B.V. All rights reserved.

Site controlling of InAs quantum wires on cleaved edges of AlGaAs/GaAs superlattices

Site-controlled InAs quantum wires were fabricated on cleaved edges of AlGaAs/GaAs superlattices (SLs) by solid source molecular beam epitaxy. The cleaved edge of AlGaAs/GaAs SLs acted as a nanopattern for selective overgrowth after selective etching. By just growing 2.0 ML InAs without high temperature degassing, site-controlled InAs quantum wires were fabricated on the cleaved edge. Furthermore, atomic force microscopy demonstrates the diffusion of In atoms is strong toward the [00 (1) over bar] direction on the (110) surface.

Role of five-quark components in radiative and strong decays of the Lambda(1405) resonance

Within an extended chiral constituent quark model, the three- and five-quark structure of the S-01 resonance Lambda(1405) is investigated. Helicity amplitudes for electromagnetic decays [Lambda(1405)->Lambda(1116)gamma, Sigma(1194)gamma] and transition amplitudes for strong decays [Lambda(1405)->Sigma(1194)pi, K- p] are derived, as well as the relevant decay widths. The experimental value for the strong decay width, Gamma(Lambda(1405)->(Sigma pi)degrees) = 50 +/- 2MeV, is well reproduced with about 50% of a five-quark admixture in the Lambda(1405). Important effects owing to the configuration mixing among Lambda P-2(1)A, Lambda P-2(8)M, and Lambda P-4(8)M are found. In addition, transitions between the three- and the five-quark components in the baryons turn out to be significant in both radiative and strong decays of the Lambda(1405) resonance.

Syntheses, crystal structures, visible and near-IR luminescent properties of ternary lanthanide (Dy3+, Tm3+) complexes containing 4,4,4-trifluoro-1-phenyl-1,3-butanedione and 1,10-phenanthroline

The ligands 4,4,4-trifluoro-1-phenyl-1.3-butanedione (Hbfa) and 1,10-phenanthroline (phen) were used to prepare ternary lanthanide (Ln) complexes [Dy(bfa)(3)phen and Tm(bfa)(3)phen]. Crystal data: Dy(bfa)(3)phen C(42)H(26)FqN(2)O(6)Dy, triclinic, P (1) over bar, a= 9.9450(6) angstrom, b = 14.0944(9) angstrom, c = 14.6043(9) angstrom, alpha = 82.104(1)degrees, beta = 87.006(1)degrees, gamma = 76.490(1)degrees, V = 1971.1(2)angstrom(3), Z = 2; Tm(bfa)(3)phen C42H26F9N2O6Tm, triclinic, P (1) over bar, a = 9.898(5)angstrom, b = 13.918(5)angstrom, c = 14.753(5)angstrom, a = 83.517(5)degrees, alpha = 86.899(5)degrees, gamma = 76.818(5)degrees, V = 1965.3(14)angstrom(3), Z = 2. The coordination number of the central Ln(3+) (Ln = Dy, Tm) ion is eight, with six oxygen atoms from three Hbfa ligands and two nitrogen atoms from the phen ligand.

Synthesis and Characterization of One-Dimensional and Molecular M(tren)InAsS4 (M = Mn, Co, and Zn) Compounds with a Noncondensed AsS33- Unit

Four transition-metal-amine complexes incorporating indium thioarsenates with the general formula M(tren)InAsS4 (M=Mn, Co, and Zn) and a noncondensed AsS33- unit have been prepared and characterized. Single-crystal X-ray diffraction analyses show that compound 1 (M=Mn) crystallizes in the triclinic crystal system (space group: P (1) over bar) and consists of a one-dimensional (1D) inorganic (1)(infinity){[InAsS4](2-)} chain and [Mn(tren)](2+) groups bonded to the opposite sides of an eight-membered In2As2S4 ring along the backbone of the infinite inorganic chains. Compounds 2 (M=Mn), 3 (M=Zn), and 4 (M=Co) are isomorphous molecular compounds. They all crystallize in the monoclinic crystal system (space group: P2(1)/c). The Mn2+ cation of [Mn(tren)](2+) in 1 has a distorted octahedral environment, while the transition-metal cations of [M(tren)](2+) in the other three compounds locate in trigonal-bipyramidal environments.