23 resultados para OSL


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常规的OSL(open-short-load)校准方法具有简便易行的特点,被广泛应用于单端口测量的测试夹具的校准。在本文中,OSL方法被首次扩展应用于双端口夹具的校准,并消除该方法带来的相位不确定问题。通过实验证明这种方法与SOLT(short-open-load-thru)方法同样精确。

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The open-short-load (OSL) method is very simple and widely used, for one-port test fixture calibration. In this paper, this method. is extended to the two-port calibration of test fixtures for the first time. The problem of phase uncertainty arising in this application has been solved. The comparison between our results and those obtained with the short-open-load-thru (SOLT) method shows that the method established is accurate enough for practical applications.

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IEECAS SKLLQG

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alpha-Al2O3:C crystal shows excellent thermoluminescence (TL) and optically stimulated luminescence (OSL) properties but the real role carbon plays in this crystal is still not clearly understood so far. In this work, alpha-Al2O3:C crystal doping with different amounts of carbon were grown by the temperature gradient technique, and TL and OSL properties of as-grown crystals were investigated. Additionally, a mechanism was proposed to explain the role of carbon in forming the TL and OSL properties of alpha-Al2O3:C. TL and OSL intensities of as-grown crystals increase with the increasing amount of carbon doping in the crystal, but no shift is found in the glow peak location at 465 K. As the amount of carbon doping in the crystals decreases, OSL decay rate becomes faster. With the increase in heating rate, the integral TL response of as-grown crystals decreases and glow peak shifts to higher temperatures. TL response decrease rate increases with the increasing amount of carbon doping in the crystals. All the TL and OSL response curves of as-grown crystals show linear-sublinear-saturation characteristic, and OSL dose response exhibits higher sensitivity and wider linear dose range than that of TL. The crystal doping with 5000 ppm carbon shows the best dosimetric properties. Carbon plays the role of a dopant in alpha-Al2O3:C crystal and four-valent carbon anions replace the two-valent anions of oxygen during the crystal growth process, and large amounts of oxygen vacancies were formed, which corresponds to the high absorption coefficient of F and F+ centers in the crystals.

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以高纯α-Al2O3和石墨为原料,采用温梯法生长了α-Al2O3:C晶体,使用RisΦTL/OSL-DA-15型热释光和光释光仪研究了其热释光和光释光特性.α-Al2O3:C晶体在462K附近有单一热释光峰,发射波长位于410nm.随着辐照剂量的增加,热释光强度逐渐增强,462K的热释光特征峰位置保持不变.α-Al2O3:C晶体的光释光衰减曲线由快衰减和慢衰减两个部分组成,随着辐照剂量的增加,快衰减部分衰减速率变化不大,而慢衰减部分衰减速率加快.在5×10-6—10Gy剂量范围内,α-Al2O3:C晶体的热释光剂量响应呈现良好的线性关系,30Gy时达到饱和;光释光剂量响应在5×10-6—60Gy剂量范围内呈现良好的线性关系,100Gy时达到饱和.与热释光相比,光释光剂量响应具有更高的灵敏度和更宽的线性剂量响应范围.

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In this work. an alpha-Al2O3:C crystal was directly grown by the temperature gradient technique (TGT) using Al2O3 and graphite powders as the raw materials. The optical, optically stimulated luminescence (OSL) properties and dosimetric characteristics of as-grown crystal were investigated. As-grown alpha-Al2O3:C crystal shows strong absorption band at 205, 230 and 256 nm. Three-dimensional thermoluminescence (TL) emission spectrum of the crystal shows a single emission peak at similar to 415 nm. The OSL decay curve can be fitted to two exponentials, the faster component and the slower component. The OSL response of the crystal shows a linear-sublinear-saturation characteristic. As-grown alpha-Al2O3:C crystal shows excellent linearity in the dose range from 5 x 10(-6) to 50 Gy. For doses higher than the saturation dose (100 Gy). the OSL sensitivity decreases as the dose increases. Crown Copyright (C) 2008 Published by Elsevier B.V. All rights reserved.

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The open-short-load (OSL) method is very simple and widely used for one-port test fixture calibration. In this paper, this method is extended, for the first time, to the two-port calibration of test fixtures with different test ports. The problem of phase uncertainty arising in this application has been solved. The comparison between our results and those obtained with the SOLT method shows that the method established is accurate for practical applications. (C) 2002 Wiley Periodicals, Inc.

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提出了一种精确测试电吸收调制激光器(EML)集成芯片高频特性的方法。待测芯片制作在带有微带线的热沉上,同时采用光探测器作为光电转换器,二者构成待测双口网络。被测双口网络的一端是共面线,使用微波探针作为测试夹具加载信号,另一端是同轴线,两个测试端口不同,不能采用简单的同轴校准方法校准待测系统。测试过程中采用扩展的开路-短路-负载(OSL)误差校准技术对集成器件的测试夹具微波探针进行校准,扣除了测试中使用的微波探针对集成光源高频特性的影响,同时采用光外差的方法扣除了高速光探测器的频率响应对结果的影响,得到集成光源散射参数的精确测试结果。