100 resultados para Modulated materials


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New organic-inorganic perovskites with different PbBr perovskite sheets stabilized by 3- or 4-an-tidinopyridine were synthesized and structurally characterized. 4-Amidinopyridine constructs < 001 >-oriented perovskite with inorganic sheets made up of typical corner-sharing octahedra of PbBr2. Analogous chemistry in the presence of 3-amidinopyridine under the same conditions results in an unusual hybrid perovskite with the inorganic sheets showing a novel framework including both corner-sharing and edge-sharing PbBr2, which is different from any previously reported ones.

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Performing an event-based continuous kinetic Monte Carlo simulation, we investigate the modulated effect induced by the dislocation on the substrate to the growth of semiconductor quantum dots (QDs). The relative positions between the QDs and the dislocations are studied. The stress effects to the growth of the QDs are considered in simulation. The simulation results are compared with the experiment and the agreement between them indicates that this simulation is useful to study the growth mode and the atomic kinetics during the growth of the semiconductor QDs. (c) 2006 Elsevier Ltd. All rights reserved.

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High performance InGaAsP/InGaAsP strained compensated multiple-quantum-well (MQW) electroabsorption modulators (EAM) monolithically integrated with a DFB laser diode have been designed and realized by ultra low metal-organic vapor phase epitaxy (MOVPE) based on a novel butt joint scheme. The optimization thickness of upper SCH layer for DFB and EAM was obtained of the proposed MQW structure of the EAM through numerical simulation and experiment. The device containing 250(mu m) DFB and 170(mu m) EAM shows good material quality and exhibits a threshold current of 17mA, an extinction ratio of higher than 30 dB and a very high modulation efficiency (12dB/V) from 0V to 1V. By adopting a high-mesa ridge waveguide and buried polyimide, the capacitance of the modulator is reduced to about 0.30 pF corresponding to a 3dB bandwidth more than 20GHz.

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A 1.55-mu m ridge DFB laser and electroabsorption modulator monolithically integrated with a buried-ridge-stripe dual-waveguide spot-size converter at the output port for low-loss coupling to a cleaved single-mode optical fiber was fabricated by means of selective area growth, quantum well intermixing and dual-core technologies. These devices exhibit threshold current of 28 mA, side mode suppression ratio of 38.0 dB, 3-dB modulation bandwidth of 12.0 GHz, modulator extinction ratios of 25.0 dB dc. The output beam divergence angles of the spot-size converter in the horizontal and vertical directions are as small as 8.0 degrees x 12.6 degrees, respectively, resulting in 3.2 dB coupling loss with a cleaved single-mode optical fiber.

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Performing an event-based continuous kinetic Monte Carlo simulation, we investigate the modulated effect induced by the dislocation on the substrate to the growth of semiconductor quantum dots (QDs). The relative positions between the QDs and the dislocations are studied. The stress effects to the growth of the QDs are considered in simulation. The simulation results are compared with the experiment and the agreement between them indicates that this simulation is useful to study the growth mode and the atomic kinetics during the growth of the semiconductor QDs. (c) 2006 Elsevier Ltd. All rights reserved.

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It is of utmost importance to understand the spallation behaviour of heterogeneous materials. In this paper, a driven nonlinear threshold model with stress fluctuation is presented to study the effects of microstructural heterogeneity on continuum damage evolution. The spallation behavior of heterogeneity material is analyzed with this model. The heterogeniety of mesoscopic units is characterized in terms of Weibull modulus m of strength distibution and stress fluctuation parameter k. At high stress, the maximum damage increases with m; while at low stress, the maximum damage decreases. In addition, for low stress, severe stress fluctuation causes higher damage; while for high stress, causes lower damage.

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This paper presents an analysis of crack problems in homogeneous piezoelectrics or on the interfaces between two dissimilar piezoelectric materials based on the continuity of normal electric displacement and electric potential across the crack faces. The explicit analytic solutions are obtained for a single crack in an infinite piezoelectric or on the interface of piezoelectric bimaterials. For homogeneous materials it is found that the normal electric displacement D-2, induced by the crack, is constant along the crack faces which depends only on the remote applied stress fields. Within the crack slit, the perturbed electric fields induced by the crack are also constant and not affected by the applied electric displacement fields. For bimaterials, generally speaking, an interface crack exhibits oscillatory behavior and the normal electric displacement D-2 is a complex function along the crack faces. However, for bimaterials, having certain symmetry, in which an interface crack displays no oscillatory behavior, it is observed that the normal electric displacement D-2 is also constant along the crack faces and the electric field E-2 has the singularity ahead of the crack tip and has a jump across the interface. Energy release rates are established for homogeneous materials and bimaterials having certain symmetry. Both the crack front parallel to the poling axis and perpendicular to the poling axis are discussed. It is revealed that the energy release rates are always positive for stable materials and the applied electric displacements have no contribution to the energy release rates.

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An elasto-plastic finite element method is developed to predict the residual stresses of thermal spraying coatings with functionally graded material layer. In numerical simulations, temperature sensitivity of various material constants is included and mix

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This paper presents a fully anisotropic analysis of strip electric saturation model proposed by Gao et al. (1997) (Gao, H.J., Zhang, T.Y., Tong, P., 1997. Local and global energy release rates for an electrically yielded crack in a piezoelectric ceramic. J. Mech. Phys. Solids, 45, 491-510) for piezoelectric materials. The relationship between the size of the strip saturation zone ahead of a crack tip and the applied electric displacement field is established. It is revealed that the critical fracture stresses for a crack perpendicular to the poling axis is linearly decreased with the increase of the positive applied electric field and increases linearly with the increase of the negative applied electric field. For a crack parallel to the poring axis, the failure stress is not effected by the parallel applied electric field. In order to analyse the existed experimental results, the stress fields ahead of the tip of an elliptic notch in an infinite piezoelectric solid are calculated. The critical maximum stress criterion is adopted for determining the fracture stresses under different remote electric displacement fields. The present analysis indicates that the crack initiation and propagation from the tip of a sharp elliptic notch could be aided or impeded by an electric displacement field depending on the field direction. The fracture stress predicted by the present analysis is consistent with the experimental data given by Park and Sun (1995) (Park, S., Sun, C.T., 1995. Fracture criteria for piezoelectric materials. J. Am. Ceram. Soc 78, 1475-1480).

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A 3D anisotropic elastoplastic-damage model was presented based on continuum damage mechanics theory. In this model, the tensor decomposition technique is employed. Combined with the plastic yield rule and damage evolution, the stress tensor in incremental format is obtained. The derivate eigenmodes in the proposed model are assumed to be related with the uniaxial behavior of the rock material. Each eigenmode has a corresponding damage variable due to the fact that damage is a function of the magnitude of the eigenstrain. Within an eigenmodes, different damage evolution can be used for tensile and compressive loadings. This model was also developed into finite element code in explicit format, and the code was integrated into the well-known computational environment ABAQUS using the ABAQUS/Explicit Solver. Numerical simulation of an uniaxial compressive test for a rock sample is used to examine the performance of the proposed model, and the progressive failure process of the rock sample is unveiled.

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For brittle solids containing numerous small cracks, a micromechanical damage theory is presented which accounts for the interactions between different small cracks and the effect of the boundary of a finite solid, and includes growth of the pre-existing small cracks. The analysis is based on a superposition scheme and series expansions of the complex potentials. The small crack evolution process is simulated through the use of fracture mechanics incorporating appropriate failure criteria. The stress-strain relations are obtained from the micromechanics analysis. Typical examples are given to illustrate the potential capability of the proposed theory. These results show that the present method provides a direct and efficient approach to deal with brittle finite solids containing multiple small cracks. The stress-strain relation curves are evaluated for a rectangular plate containing small cracks.

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The vaporization of condensed materials in contact with high-current discharge plasmas is considered. A kinetic numerical method named direct simulation Monte Carlo (DSMC) and analytical kinetic approaches based on the bimodal distribution function approximation are employed. The solution of the kinetic layer problem depends upon the velocity at the outer boundary of the kinetic layer which varies from very small, corresponding to the high-density plasma near the evaporated surface, up to the sound speed, corresponding to evaporation into vacuum. The heavy particles density and temperature at the kinetic and hydrodynamic layer interface were obtained by the analytical method while DSMC calculation makes it possible to obtain the evolution of the particle distribution function within the kinetic layer and the layer thickness.

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微电子机械系统(MEMS)技术的迅速崛起,推动了所用材料微尺度力学性能测试技术的发展.首先按作用方式将实验分成压痕/划痕、弯曲、拉伸、扭转四大类,系统介绍检测MEMS材料微尺度力学性能的微型试样、测试方法及其实验结果.测试材料主要有硅、氧化硅、氮化硅和一些金属.实验结果主要包括基本的力学性能参数如弹性模量、残余应力、屈服强度、断裂强度和疲劳强度等.最后,简要分析了未来的发展需求.

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Nanocrystalline materials are characterized by a typical grain size from 1 to 100nm. In order to study the nanocrystalline properties of nanocrystalline materials, we chose nanocrystalline coppers as the research object. The uniaxial tensile deformation of computer produced nanocrystalline coppers is simulated by using molecular dynamics with Finnis-Sinclair potential. The mean grain size of simulated nanocrystalline coppers is varied within the 5.38 to 1.79 nm range. The strength, Young's modulus and stress-strain are strongly depended on the grain size and nanocrystalline structure. The simulated nanocrystalline coppers show a reverse Hall-Petch effect.