Band-tail shape and transport near the metal-insulator transition in Si-doped

In the present work, an infrared light-emitting diode is used to photodope molecular-beam-epitaxy-grown Si: Al0.3Ga0.7As, a well-known persistent photoconductor, to vary the effective electron concentration of samples in situ. Using this technique, we examine the transport properties of two samples containing different nominal doping concentrations of Si [1 x 10(19) cm(-3) for sample 1 (S1) and 9 x 10(17) cm(-3) for sample 2 (S2)] and vary the effective electron density between 10(14) and 10(18) cm(-3). The metal-insulator transition for S1 is found to occur at a critical carrier concentration of 5.7 x 10(16) cm(-3) at 350 mK. The mobilities in both samples are found to be limited by ionized impurity scattering in the temperature range probed, and are adequately described by the Brooks-Herring screening theory for higher carrier densities. The shape of the band tail of the density of states in Al0.3Ga0.7As is found electrically through transport measurements. It is determined to have a power-law dependence, with an exponent of -1.25 for S1 and -1.38 for S2.

Stress reduction in GaN films on (111) silicon-on-insulator substrate grown by metal-organic chemical vapor deposition

The GaN film was grown on the (111) silicon-on-insulator (SOI) substrate by metal-organic chemical vapor deposition and then annealed in the deposition chamber. A multiple beam optical stress sensor was used for the in-situ stress measurement, and X-ray diffraction (XRD) and Raman spectroscopy were used for the characterization of GaN film. Comparing the characterization results of the GaN films on the bulk silicon and SOI substrates, we can see that the Raman spectra show the 3.0 cm(-1) frequency shift of E-2(TO), and the full width at half maximum of XRD rocking curves for GaN (0002) decrease from 954 arc see to 472 are sec. The results show that the SOI substrates can reduce the tensile stress in the GaN film and improve the crystalline quality. The annealing process is helpful for the stress reduction of the GaN film. The SOI substrate with the thin top silicon film is more effective than the thick top silicon film SOI substrate for the stress reduction. (C) 2007 Elsevier B.V. All rights reserved.

Stress evolution influenced by oxide charges on GaN metal-organic chemical vapor deposition on silicon-on-insulator substrate

GaN epilayers have been deposited on silicon-on-insulator (SOI) and bulk silicon substrates. The stress transition thickness and the initial compressive stress of a GaN epilayer on the SOI substrate are larger than those on the bulk silicon substrate, as shown in in situ stress measurement results. It is mainly due to the difference of the three-dimensional island density and the threading dislocation density in the GaN layer. It can increase the compressive stress in the initial stage of growth of the GaN layer, and helps to offset the tensile stress generated by the lattice mismatch.

Electrical properties in vanadyl-phthalocyanine-based metal-insulator-semiconductor devices

We investigated electrical properties of vanadyl phthalocyanine (VOPc) metal-insulator-semiconductor (MIS) devices by the measurement of capacitance and conductance, which were fabricated on ordered para-sexiphenyl (p-6P) layer by weak epitaxy growth method. The VOPc/p-6P MIS diodes showed a negligible hysteresis effect at a gate voltage of +/- 20 V and small hysteresis effect at a gate voltage of +/- 40 V due to the low interface trap state density of about 1x10(10) eV(-1) cm(-2). Furthermore, a high transition frequency of about 10 kHz was also observed under their accumulation mode. The results indicated that VOPc was a promising material and was suitable to be applied in active matrix liquid crystal displays and organic logic circuits.

Transfer and detection of single electrons using metal-oxide-semiconductor field-effect transistors

A single-electron turnstile and electrometer circuit was fabricated on a silicon-on-insulator substrate. The turnstile, which is operated by opening and closing two metal-oxide-semiconductor field-effect transistors (MOSFETs) alternately, allows current quantization at 20 K due to single-electron transfer. Another MOSFET is placed at the drain side of the turnstile to form an electron storage island. Therefore, one-by-one electron entrance into the storage island from the turnstile can be detected as an abrupt change in the current of the electrometer, which is placed near the storage island and electrically coupled to it. The correspondence between the quantized current and the single-electron counting was confirmed.

Size-dependent inelastic behavior of particle-reinforced metal-matrix composites

The strengthening behavior of particle-reinforced metal-matrix composites (MMCp) is primarily attributed to the dislocation strengthening effect and the load-transfer effect. To account for these two effects in a unified way, a new hybrid approach is developed in this paper by incorporating the geometrically necessary dislocation strengthening effect into the incremental micromechanical scheme. By making use of this hybrid approach, the particle-size-dependent inelastic deformation behavior of MMCp is given. Some comparisons with the available experimental results demonstrate that the present approach is satisfactory.

Flow Stress of Biomorphous Metal-Matrix Composites

For metal-matrix composites (MMCs), interfacial debonding between the ductile matrix and the reinforcing hard inclusions is an important failure mode. A fundamental approach to improving the properties of MMCs is to optimize their microstructure to achieve maximum strength and toughness. Here, we investigate the flow stress of a MMC with a nanoscale microstructure similar to that of bone. Such a 'biomorphous' MMC would be made of staggered hard and slender nanoparticles embedded in a ductile matrix. We show that the large aspect ratio and the nanometer size of inclusions in the biomorphous MMC lead to significantly improved properties with increased tolerance of interfacial damage. In this case, the partially debonded inclusions continue to carry mechanical load transferred via longitudinal shearing of the matrix material between neighboring inclusions. The larger the inclusion aspect ratio, the larger is the flow stress and work hardening rate for the composite. Increasing the volume concentration of inclusion also makes the biomorphous MMC more tolerant of interfacial damage.

Material response and failure mechanism of unidirectional metal matrix composites under impulsive shear loading

The material response and failure mechanism of unidirectional metal matrix composite under impulsive shear loading are investigated in this paper. Both experimental and analytical studies were performed. The shear strength of unidirectional C-f/A356.0 composite and A356.0 aluminum alloy at high strain rate were measured with a modified split Hopkinson torsional bar technique. The results indicated that the carbon fibers did not improve the shear strength of aluminum matrix if the fiber orientation aligned with the shear loading axis. The microscopic inspection of the fractured surface showed a multi-scale zigzag feature which implied a complicated shear failure mechanism in the composite. In addition to testing, the micromechanical stress field in the composite was analyzed by the generalized Eshelby equivalent method (GEEM). The influence of cracking in matrix on the micromechanical stress field was investigated as well. The results showed that the stress distribution in the composite is quite nonhomogeneous and very high shear stress concentrations are found in some regions in the matrix. The high shear stress concentration in the matrix induces tensile cracking at 45 degrees to the shear direction. This in turn aggravates the stress concentration at the fiber/matrix interface and finally leads to a catastrophic failure in the composite. From the correlation between the analysis and experimental results, the shear failure mechanism of unidirectional C-f/A356.0 composite can be elucidated qualitatively.

Ab initio pair potentials at metal-ceramic interfaces

A systematic approach is proposed to obtain the interfacial interatomic potentials. By inverting ab initio adhesive energy curves for the metal-MgO ceramic interfaces, We derive interfacial potentials between Ag and O2-, Ag and Mg2+, Al and O2-, Al and Mg2+. The interfacial potentials, obtained from this method, demonstrate general features of bondings between metal atoms and ceramic ions.

Effect of temperature on dislocation emission from crack tip for BCC metal Mo

The effect of thermally activated energy on the dislocation emission from a crack tip in BCC metal Mo is simulated in this paper. Based on the correlative reference model on which the flexible displacement boundary scheme is introduced naturally, the simulation shows that as temperature increases the critical stress intensity factor for the first dislocation emission will decrease and the total number of emitted dislocations increase for the same external load. The dislocation velocity and extensive distance among partial dislocations are not sensitive to temperature. After a dislocation emission, two different deformation slates are observed, the stable and unstable deformation states. In the stable deformation slate, the nucleated dislocation will emit from the crack tip and piles up at a distance far away from the crack tip, after that the new dislocation can not be nucleated unless the external loading increases. In the unstable deformation state, a number of dislocations can be emitted from the crack lip continuously under the same external load.

Dynamic properties and asymmetry of tension and compression of metal matrix composites under impact loading

The mechanical behaviors of 2124, Al-5Cu, Al-Li and 6061 alloys reinforced by silicon carbide particulates, together with 15%SiCw/6061 alloy, were studied under the quasi-static and impact loading conditions, using the split Hopkinson tension/compression bars and Instron universal testing machine. The effect of strain rate on the ultra tensile strength (UTS), the hardening modulus and the failure strain was investigated. At the same time, the SEM observations of dynamic fracture surfaces of various MMC materials showed some distinguished microstructures and patterns. Some new characteristics of asymmetry of mechanical behaviors of MMCs under tension and compression loading were also presented and explained in details, and they could be considered as marks to indicate, to some degree, the mechanism of controlling damage and failure of MMCs under impact loading. The development of new constitutive laws about MMCs under impact loading should benefit from these experimental results and theoretical analysis.

Effect of Particle Size on the Formation of Adiabatic Shear Band In Particle Reinforced Metal Matrix Composites

In this paper, the effect of particle size on the formation of adiabatic shear band in 2024 All matrix composites reinforced with 15% volume fraction of 3.5, 10 and 20 mum SiC particles was investigated by making use of split Hopkinson pressure bar (SHPB). The results have demonstrated that the onset of adiabatic shear banding in the composites strongly depends on the particle size and adiabatic shear banding is more readily observed in the composite reinforced with small particles than that in the composite with large particles. This size dependency phenomenon can be characterized by the strain gradient effect. Instability analysis reveals that high strain gradient is a strong driving force for the formation of adiabatic shear banding in particle reinforced metal matrix composites (MMCp).

Strain Gradient Effects on Deformation Strengthening Behavior of Particle Reinforced Metal Matrix Composites

Dislocation models with considering the mismatch of elastic modulus between matrix and reinforcing particles are used to determine the effective strain gradient \ita for particle reinforced metal matrix composites (MMCp) in the present research. Based on Taylor relation and the kinetics of dislocation multiplication, glide and annihilation, a strain gradient dependent constitutive equation is developed. By using this strain gradient-dependent constitutive equation, size-dependent deformation strengthening behavior is characterized. The results demonstrate that the smaller the particle size, the more excellent in the reinforcing effect. Some comparisons with the available experimental results demonstrate that the present approach is satisfactory.