Atomistic Simulation On Size-Dependent Yield Strength And Defects Evolution Of Metal Nanowires

A simple derivation based on continuum mechanics is given, which shows the surface stress is critical for yield strength at ultra-small scales. Molecular dynamics (MD) simulations with modified embedded atom method (MEAM) are employed to investigate the mechanical behaviors of single-crystalline metal nanowires under tensile loading. The calculated yield strengths increasing with the decrease of the cross-sectional area of the nanowires are in accordance with the theoretical prediction. Reorientation induced by stacking faults is observed at the nanowire edge. In addition. the mechanism of yielding is discussed in details based on the snapshots of defects evolution. The nanowires in different crystallographic orientations behave differently in stretching deformation. This study on the plastic properties of metal nanowires will be helpful to further understanding of the mechanical properties of nanomaterials. (C) 2009 Elsevier B.V. All rights reserved.

STUDY OF MICROSTRUCTURE AND DEFECTS IN HYDROGENATED MICROCRYSTALLINE SILICON FILMS

Microcrystalline silicon films were deposited by very high frequency (VHF) plasma-enhanced chemical vapor deposition (PECVD) with different hydrogen dilution. The microstructure of these films was investigated using Raman spectroscopy and infrared absorption (IR) spectra. The crystalline, amorphous, and grain boundary volume fractions X-c, X-a and X-gb were estimated from Raman measurements. An interface structure factor (R-if) is proposed to characterize the grain boundary volume fractions in IR spectroscopy. The density of states (DOS) of the microcrystalline crystalline silicon films were studied by phase-shift analysis of modulated photocurrent (MPC) and photoconductivity spectroscopy. It was observed that DOS increases with increasing grain boundary volume fractions, while the values of electron mobility-lifetime product mu T-e(e) disease.

Cooperation of Mtmr8 with PI3K Regulates Actin Filament Modeling and Muscle Development in Zebrafish

Background: It has been shown that mutations in at least four myotubularin family genes (MTM1, MTMR1, 2 and 13) are causative for human neuromuscular disorders. However, the pathway and regulative mechanism remain unknown. Methodology/Principal Findings: Here, we reported a new role for Mtmr8 in neuromuscular development of zebrafish. Firstly, we cloned and characterized zebrafish Mtmr8, and revealed the expression pattern predominantly in the eye field and somites during early somitogenesis. Using morpholino knockdown, then, we observed that loss-of-function of Mtmr8 led to defects in somitogenesis. Subsequently, the possible underlying mechanism and signal pathway were examined. We first checked the Akt phosphorylation, and observed an increase of Akt phosphorylation in the morphant embryos. Furthermore, we studied the PH/G domain function within Mtmr8. Although the PH/G domain deletion by itself did not result in embryonic defect, addition of PI3K inhibitor LY294002 did give a defective phenotype in the PH/G deletion morphants, indicating that the PH/G domain was essential for Mtmr8's function. Moreover, we investigated the cooperation of Mtmr8 with PI3K in actin filament modeling and muscle development, and found that both Mtmr8-MO1 and Mtmr8-MO2+LY294002 led to the disorganization of the actin cytoskeleton. In addition, we revealed a possible participation of Mtmr8 in the Hedgehog pathway, and cell transplantation experiments showed that Mtmr8 worked in a non-cell autonomous manner in actin modeling. Conclusion/Significance: The above data indicate that a conserved functional cooperation of Mtmr8 with PI3K regulates actin filament modeling and muscle development in zebrafish, and reveal a possible participation of Mtmr8 in the Hedgehog pathway. Therefore, this work provides a new clue to study the physiological function of MTM family members.

Outline and computational approaches of protein misfolding.

Protein misfolding is a general causation of classical conformational diseases and many pathogenic changes that are the result of structural conversion. Here I review recent progress in clinical and computational approaches for each stage of the misfolding process, aiming to present readers an outline for swift comprehension of this field.

Influence of annealing temperature on structure, optical loss and laser-induced damage threshold of TiO2 thin films

TiO2 thin films are prepared on fused silica with conventional electron beam evaporation deposition. After annealed at different temperatures for 4h, the spectra and XRD patterns of the TiO2 thin film are obtained. Weak absorption of coatings is measured by the surface thermal lensing technique, and laser-induced damage threshold (LIDT) is determined. It is found that with the increasing annealing temperature, the transmittance of TiO2 films decreases. Especially when coatings are annealed at high temperature over 1173K, the optical loss is very serious. Weak absorption detection indicates that the absorption of coatings decreases firstly and then increases, and the absorption and defects play major roles in the LIDT of TiO2 thin films.

Plasma biochemical responses of the planktivorous filter-feeding silver carp (Hypophthalmichthys molitrix) and bighead carp (Aristichthys nobilis) to prolonged toxic cyanobacterial blooms in natural waters

The planktivorous filter-feeding silver carp (Hypophthalmichthys molitrix) and bighead carp (Aristichthys nobilis) are the attractive candidates for bio-control of plankton communities to eliminate odorous populations of cyanobacteria. However, few studies focused on the health of such fishes in natural water body with vigorous toxic blooms. Blood parameters are useful and sensitive for diagnosis of diseases and monitoring of the physiological status of fish exposed to toxicants. To evaluate the impact of toxic cyanobacterial blooms on the planktivorous fish, 12 serum chemistry variables were investigated in silver carp and bighead carp for 9 months, in a large net cage in Meiliang Bay, a hypereutrophic region of Lake Taihu. The results confirmed adverse effects of cyanobacterial blooms on two phytoplanktivorous fish, which mainly characterized with potential toxicogenomic effects and metabolism disorders in liver, and kidney dysfunction. In addition, cholestasis was intensively implied by distinct elevation of all four related biomarkers (ALP, GGT, DBIL, TBIL) in bighead carp. The combination of LDH, AST activities and DBIL, URIC contents for silver carp, and the combination of ALT. ALP activities and TBIL, DBIL. URIC concentrations for bighead carps were found to most strongly indicate toxic effects from cyanobacterial blooms in such fishes by a multivariate discriminant analysis. (C) 2009 Elsevier B.V. All rights reserved.

Raman scattering study on Ga1-xMnxAs prepared by Mn ions implantation, deposition and post-annealing

Raman scattering measurements have been performed in Ga1-xMnxAs crystals prepared by Mn ions implantation, deposition, and post-annealing. The Raman spectrum measured from the implanted surface of the sample shows some weak phonon modes in addition to GaAs-like phonon modes, where the GaAs-like LO and TO phonons are found to be shifted by approximately 4 and 2 cm(-1), respectively, in the lower frequency direction compared to those observed from the unimplanted surface of the sample. The weak vibrational modes observed are assigned to hausmannite Mn3O4 like. The coupled LO-phonon plasmon mode (CLOPM), and defects and As related vibrational modes caused by Mn ions implantation, deposition, and post-annealing are also observed. The compositional dependence of GaAs-like LO phonon frequency is developed for strained and unstrained conditions and then using the observed LOGaAs peak, the Mn composition is evaluated to be 0.034. Furthermore, by analyzing the intensity of CLOPM and unscreened LOGaAs phonon mode, the hole density is evaluated to be 1.84 x 10(18) cm(-3). (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Effect of critical thickness on structural and optical properties of InxGa1-xN/GaN multiple quantum wells

InGaN/GaN multiquantum-well (MQW) structures grown by metalorganic chemical-vapor deposition on n-type GaN and capped by p-type GaN were investigated by cross-sectional transmission electron microscopy, double crystal x-ray diffraction, and temperature-dependent photoluminescence. For the sample with strained-layer thicknesses greater than the critical thicknesses, a high density of pure edge type threading dislocations generated from MQW layers and extended to the cap layer was observed. These dislocations result from a relaxation of the strained layers when their thicknesses are beyond the critical thicknesses. Because of indium outdiffusion from the well layers due to the anneal effect of Mg-doped cap layer growth and defects generated from strain relaxation, the PL emission peak was almost depressed by the broad yellow band with an intensity maximum at 2.28 eV. But for the sample with strained-layer thicknesses less than the critical thicknesses, it has no such phenomenon. The measured critical thicknesses are consistent with the calculated values using the model proposed by Fischer, Kuhne, and Richter. (C) 2004 American Institute of Physics.

Effect of ion flux on recrystallization and resistance lowering in phosphorus-implanted (0001)-oriented 4H-SiC

High-dose ion implantation of phosphorus into 4H-SiC (0001) has been investigated with three different ion fluxes ranging from 1.0 to 4.0 x 10(12) P(+)cm(-2.)s(-1) and keeping the implantation dose constant at 2.0 x 10(15) P(+)cm(-2). The implantations are performed at room temperature and subsequently annealed at 1500 degrees C. Photoluminescence and Raman scattering are employed to investigate the implantation-induced damages and the residual defects after annealing. The electrical properties of the implanted layer are evaluated by Hall effect measurements on the sample with a van der Pauw configuration. Based on these results, it is revealed that the damages and defects in implanted layers can be greatly reduced by decreasing the ion flux. Considering room temperature implantation and a relatively low annealing temperature of 1500 degrees C, a reasonably low sheet resistance of 106 Omega/square is obtained at ion flux of 1.0 x 10(12) P(+)cm(-2.)s(-1) with a donor concentration of 4.4 x 10(19)cm(-3).

Effects of buffer layers on the stress and morphology of GaN epilayer grown on Si substrate by MOCVD

Low temperature (LT) AlN interlayer and insertion of superlattice are two effective methods to reduce crack and defects for GaN grown on Si substrate. In this paper, the influence of two kinds of buffer on stress, morphology and defects of GaN/Si are studied and discussed. The results measured by optical microscope and Raman shift show that insertion of superlattice is more effective than insertion of LT-AlN in preventing the formation of cracks in GaN grown on Si substrate. Cross-sectional TEM images show that the not only screw but edge-type dislocation densities are greatly reduced by using the superlattice buffer. (c) 2006 Elsevier B.V. All rights reserved.

Native deep level defects in ZnO single crystal grown by CVT method - art. no. 68410I

Hall effect, photoluminescence (PL), infrared absorption, deep level transient spectroscopy (DLTS), and Raman scattering have been used to study property and defects of ZnO single crystal grown by a chemical vapor transport method (CVT). As-grown ZnO is N type with free electron density Of 10(16)-10(17)cm(-3). It has a slight increase after 900 degrees C annealing in oxygen ambient. The DLTS measurement revealed four deep level defects with energy at 0.30eV, 0.50eV, 0.68eV and 0.90eV in the as-grown ZnO sample, respectively. After the high temperature annealing, only the 0.5eV defect survive and has a concentration increase. PL results of the as-grown and annealed ZnO indicate that the well-known green emission disappear after the annealing. The result suggests a correlation between the 0.68eV defect and the green PL peak. Results of P-doped ZnO were also compared with the undoped ZnO sample. The nature of the defects and their influence on the material property have been discussed.

Sol-gel synthesis and photoluminescent properties of LaPO4 : A (A = Eu3+, Ce3+, Tb3+) nanocrystalline thin films

Rare-earth ion (Eu3+, Tb3+, Ce3+)- doped LaPO4 nanocrystalline thin films and their patterning were fabricated by a Pechini sol-gel process combined with soft lithography on silicon and silica glass substrates. X-Ray diffraction (XRD), Fourier transform infrared spectroscopy (FT-IR), thermogravimetric and differential thermal analysis (TG-DTA), atomic force microscopy (AFM), scanning electron microcopy (SEM), optical microscopy, absorption and photoluminescence (PL) spectra as well as lifetimes were used to characterize the resulting films. The results of XRD indicate that the films begin to crystallize at 700 degreesC and the crystallinity increases with increasing annealing temperature. The morphology of the thin film depends on the annealing temperature and the number of coating layers. The 1000 degreesC annealed single layer film is transparent to the naked eye, uniform and crack-free with a thickness of about 200 nm and an average grain size of 100 nm. Patterned thin films with different strip widths ( 5 - 50 mm) were obtained by micromolding in capillaries ( soft lithography). The doped rare earth ions show their characteristic emission in the nanocrystalline LaPO4 films, i.e., Eu3+ D-5(0)-F-7(J) (J = 1, 2, 3, 4), Tb3+ D-5(3,4) - F-7(J) ( J = 6, 5, 4, 3, 2) and Ce3+ 5d-4f transition emissions, respectively. Both the lifetimes and the PL intensities of Eu3+ and Tb3+ increase with increasing annealing temperature, and the optimum concentrations for them were determined to be 5 mol% and 16 mol% of La3+ in LaPO4 thin films, respectively. An energy transfer phenomenon from Ce3+ to Tb3+ has been observed in LaPO4 nanocrystalline thin films, and the energy transfer efficiency depends on the doping concentration of Tb3+ if the concentration of Ce3+ is fixed.