Magnetic resonant cavity composing of a three layered plasmonic nanostructure

The magnetic-type plasmon resonant of a metal-dielectric-metal nanocavity working at the wavelength of 1.55 mu m is explored, in which the upper layer is periodically patterned with metallic nanostrip arrays. In the dielectric film layer, the magnetic energy intensity is enhanced about 1700 times when irradiated with a p-polarized plane wave. We numerically studied the dispersion of the modes and the Q-value of this periodic cavity arrays. Q value is estimated about 18 and still has room for further improvement. It provides a new type of nanocavity that exhibits a strong magnetic response.

The coulomb potential energy effect on the intensity of the characteristic lines at highly charged ion incendence on Al surface

The Al atomic characteristic spectral lines were induced by the impact of Ar-40(q+) ions (8 <= q <= 16; kinetic energy 150 keV) on Al surface. The result shows that by Penning impinging and resonant capture, the ion energy is deposited on the Al surface to excite the target atom, which is different from light excitation. Not only are the transitions betweem electronic configurations of the atomic complex excited, but the enhancing tendency of the characteristic spectral line intensity is consistent with the enhancing tendency of the coulomb potential energy of the incident ions with increasing charged states.

Computation of stress intensity factors by the sub-region mixed finite element method of lines

Based on the sub-region generalized variational principle, a sub-region mixed version of the newly-developed semi-analytical 'finite element method of lines' (FEMOL) is proposed in this paper for accurate and efficient computation of stress intensity factors (SIFs) of two-dimensional notches/cracks. The circular regions surrounding notch/crack tips are taken as the complementary energy region in which a number of leading terms of singular solutions for stresses are used, with the sought SIFs being among the unknown coefficients. The rest of the arbitrary domain is taken as the potential energy region in which FEMOL is applied to obtain approximate displacements. A mixed system of ordinary differential equations (ODEs) and algebraic equations is derived via the sub-region generalized variational principle. A singularity removal technique that eliminates the stress parameters from the mixed equation system eventually yields a standard FEMOL ODE system, the solution of which is no longer singular and is simply and efficiently obtained using a standard general-purpose ODE solver. A number of numerical examples, including bi-material notches/cracks in anti-plane and plane elasticity, are given to show the generally excellent performance of the proposed method.

Short-pulse laser absorption via J x B heating in ultrahigh intensity laser plasma interaction

An analytical fluid model for JxB heating during the normal incidence by a short ultraintense linearly polarized laser on a solid-density plasma is proposed. The steepening of an originally smooth electron density profile as the electrons are pushed inward by the laser is included self-consistently. It is shown that the JxB heating includes two distinct coupling processes depending on the initial laser and plasma conditions: for a moderate intensity (a <= 1), the ponderomotive force of the laser light can drive a large plasma wave at the point n(e)=4 gamma(0)n(c) resonantly. When this plasma wave is damped, the energy is transferred to the plasma. At higher intensity, the electron density is steepened to a high level by the time-independent ponderomotive force, n(e)> 4 gamma(0)n(c), so that no 2 omega resonance will occur, but the longitudinal component of the oscillating ponderomotive field can lead to an absorption mechanism similar to "vacuum heating." (c) 2006 American Institute of Physics.

Optical spectroscopy and energy transfer of Er3+/Ce3+ in B2O3-doped bismuth-silicate glasses

Ce3+ and B2O3 are introduced into erbium-doped Bi2O3-SiO2 glass to enhance the luminescence emission and optic spectra characters of Er3+. The energy transfer from Er3+ to Ce3+ will obviously be improved with the phonon energy increasing by the addition of B2O3. Here, the nonradiative rate, the lifetime of the I-4(11/2) -> I-4(3/2) transition, and the emission intensity and bandwidth of the 1.5 mu m luminescence with the I-4(13/2) -> I-4(5/2) transition of Er3+ are discussed in detail. The results show that the optical parameters of Er3+ in this bismuth-borate-silicate glass are nearly as good as that in tellurite glass, and the physical properties are similar to those in silicate glass. With the Judd-Ofelt and nonradiative theory analyses, the multiphonon decay and phonon-assisted energy-transfer (PAT) rates are calculated for the Er3+/Ce3+ codoped glasses. For the PAT process, an optimum value of the glass phonon energy is obtained after B2O3 is introduced into the Er3+/Ce3+ codoped bismuth-silicate glasses, and it much improves the energy-transfer rate between Er3+ I-4(11/2)-I-4(13/2) and Ce3+ F-2(5/2) -> F-2(7/2), although there is an energy mismatch. (c) 2007 Optical Society of America.

Analysis on fluorescence intensity reverse photonic phenomenon between red and green fluorescence of oxyfluoride nanophase vitroceramics

An interesting fluorescence intensity reverse photonic phenomenon between red and green fluorescence is investigated. The dynamic range. of intensity reverse between red and green fluorescence of Er( 0.5) Yb( 3): FOV oxyfluoride nanophase vitroceramics, when excited by 378.5nm and 522.5nm light respectively, is about 4.32 x 10(2). It is calculated that the phonon- assistant energy transfer rate of the electric multi- dipole interaction of {(4)G(11/2)( Er3+) -> F-4(9/2)( Er3+), F-2(7/2)( Yb3+). F-2(5/2)( Yb3+)} energy transfer of Er( 0.5) Yb( 3): FOV is around 1.380 x 10(8) s(-1), which is much larger than the relative multiphonon nonradiative relaxation rates 3.20 x 10(5) s(-1). That energy transfer rate for general material with same rare earth ion's concentration is about 1.194 x 10(5) s(-1). These are the reason to emerge the unusual intensity reverse phenomenon in Er( 0.5) Yb( 3): FOV. (C) 2007 Optical Society of America.

Energy transfer between Cr3+ and Ni2+ in transparent silicate glass ceramics containing Cr3+/Ni2+ co-doped ZnAl2O4 nanocrystals

The emission intensity of Ni2+ at 1200 nm in transparent ZnO-Al2O3-SiO2 glass ceramics containing ZnAl2O4 nanocrystals is improved approximately 8 times by Cr3+ codoping with 532 nm excitation. This enhanced emission could be attributed to an efficient energy transfer from Cr3+ to Ni2+, which is confirmed by time-resolved emission spectra. The energy transfer efficiency is estimated to be 57% and the energy transfer mechanism is also discussed. (C) 2008 Optical Society of America.

The effects of oxygen partial pressure on the optical absorption edge and the UV emission energy of ZnO films

The optical absorption edge and ultraviolet (UV) emission energy of ZnO films deposited by direct current (DC) reactive magnetron sputtering at room temperature have been investigated. With the oxygen ratio increasing, the structure of films changes from zinc and zinc oxide coexisting phase to single-phase ZnO and finally to the highly (002) orientation. Both the grain size and the stress of ZnO film vary with the oxygen partial pressure. Upon increasing the oxygen partial pressure in the growing ambient, the visible emission in the room-temperature photoluminescence spectra was suppressed without sacrificing the band-edge emission intensity in the ultraviolet region. The peaks of photoluminescence spectra were located at 3.06---3.15 eV. From optical transmittance spectra of ZnO films, the optical band gap edge was observed to shift towards shorter wavelength with the increase of oxygen partial pressure.

ApcD is necessary for efficient energy transfer from phycobilisomes to photosystem I and helps to prevent photoinhibition in the cyanobacterium Synechococcus sp PCC 7002

Phyrobilisomes (PBS) are the major light-harvesting, protein-pigment complexes in cyanobacteria and red algae. PBS absorb and transfer light energy to photosystem (PS) II as well as PS I, and the distribution of light energy from PBS to the two photosystems is regulated by light conditions through a mechanism known as state transitions. In this study the quantum efficiency of excitation energy transfer from PBS to PS I in the cyanobacterium Synechococcus sp. PCC 7002 was determined, and the results showed that energy transfer from PBS to PS I is extremely efficient. The results further demonstrated that energy transfer from PBS to PS I occurred directly and that efficient energy transfer was dependent upon the allophycocyanin-B alpha subunit, ApcD. In the absence of ApcD, cells were unable to perform state transitions and were trapped in state 1. Action spectra showed that light energy transfer from PBS to PS I was severely impaired in the absence of ApcD. An apcD mutant grew more slowly than the wild type in light preferentially absorbed by phyrobiliproteins and was more sensitive to high light intensity. On the other hand, a mutant lacking ApcF, which is required for efficient energy transfer from PBS to PS II, showed greater resistance to high light treatment. Therefore, state transitions in cyanobacteria have two roles: (1) they regulate light energy distribution between the two photosystems; and (2) they help to protect cells from the effects of light energy excess at high light intensities. (C) 2009 Elsevier B.V. All rights reserved.

Enhanced electroluminescence intensity of InGaN/GaN multi-quantum-wells based on Mg-doped GaN annealed in O-2

InGaN/GaN multi-quantum-well blue (461 +/- 4 nm) light emitting diodes with higher electroluminescence intensity are obtained by postgrowth thermal annealing at 720 C in O-2-ambient. Based on our first-principle total-energy calculations, we conclude that besides dissociating the Mg-H complex by forming H2O, annealing in O-2 has another positive effect on the activation of acceptor Mg in GaN. Mg can be further activated by the formation of an impurity band above the valence band maximum of host GaN from the passivated Mg-Ga-O-N complex. Our calculated ionization energy for acceptor Mg in the passivated system is about 30 meV shallower than that in pure GaN, in good agreement with previous experimental measurement. Our model can explain that the enhanced electroluminescence intensity of InGaN/GaN MQWs based on Mg-doped p-type GaN is due to a decrease in the ionization energy of Mg acceptor with the presence of oxygen. (C) 2008 American Institute of Physics.

Dependence of implantation-induced damage with photoluminescence intensity in GaN : Er

Erbium was implanted with energies 200 or 400 keV into epitaxial (0 0 0 1) GaN grown on (0 0 0 1) Al2O3 substrate at room temperature (RT) and 400degreesC. Both random (10degrees tilt from c-axis) and channeled (along c-axis) implantations were studied. RBS/Channeling technique was used to study the dependences of the radiation damage with ion implantation energy, direction and temperature. It was found that the channeling implantation or elevating temperature implantation both resulted in the decrease of the damage. Moreover, the Photoluminscence (PL) properties of Er-implanted GaN thin filius were also studied. The experimental results indicate that the PL intensity can be enhanced by raising implantation energy or implanting along channeling direction. (C) 2004 Elsevier B.V. All rights reserved.

Electrical and optical properties of InAs/GaAs quantum dots doped by high energy Mn implantation

Mn ions were doped into InAs/GaAs quantum dots samples by high energy. implantation and subsequent annealing. The optical and electric properties of the samples have been studied. The photoluminescence intensity of the samples annealed rapidly is stronger than that of the samples annealed for long time. By studying the relationship between the photoluminescence peaks and the implantation dose, it can be found that the photoluminescence peaks of the quantum dots show a blueshift firstly and then move to low energy with the implantation. dose increasing. The latter change in the photoluminescence peaks is probably attributed to that Mn ions entering the InAs quantum dots, which release the strain of the quantum dots. For the samples implanted by heavy dose (annealed rapidly) and the samples annealed for long time, the resistances versus temperature curves reveal anomalous peaks around 40 K.

Polarity determination for GaN thin films by electron energy-loss spectroscopy

The intensity of the N K edge in electron energy-loss spectra from a GaN thin film shows a pronounced difference when the orientation of the film approaches the (0002) and (000-2) Bragg reflections, along the polar direction. This experimental result can be interpreted by the effect associated with interference between the Bloch waves of the incident electron in the GaN crystal. The theoretical calculations indicate that, at the Bragg condition of g=0002 along the Ga-N bond direction, the thickness-averaged electron current density on the N atom plane is much higher than that at g=000 (2) over bar, with a maximum as the specimen thickness is about 0.4xi(0002) (the two-beam extinction distance). The delocalization effect on the experimental spectra is also discussed. (C) 2002 American Institute of Physics.

Increasing the photoluminescence intensity of Ge islands by chemical etching

Self-assembled Ge islands were grown on Si(100) substrate by Si2H6-Ge molecular beam epitaxy. After being subjected to chemical etching, it is found that the photoluminescence from the etched Ge islands became more intense and shifted to the higher-energy side compared to that of the as-deposited Ge islands. This behaviour was explained by the effect of chemical etching on the morphology of the Ge islands. Our results demonstrate that chemical etching can be a way to change the luminescence property of the as-deposited islands.

Mechanism on exciton-mediated energy transfer in erbium-doped silicon

Exciton-mediated energy transfer model in Er-doped silicon was presented. The emission intensity is related to optically active Er concentration, lifetime of excited Er3+ ion and spontaneous emission. The thermal quenching of the Er luminescence in Si is caused by thermal ionization of Er-bound exciton complex and nonradiative energy back-transfer processes, which correspond to the activation energy of 6.6 and 47.4 meV, respectively. Er doping in silicon introduces donor states, a large enhancement in the electrical activation of Er (up to two orders of magnitude) is obtained by co-implanting Er with O. It appears that the donor states are the gateway to the optically active Er. (C) 2000 Elsevier Science B.V. All rights reserved.