Theoretical analysis and experimental study of the space-charge-screening effect in uni-traveling-carrier photodiode

A new optimized structure of an UTC (uni-traveling-carrier) photodiode is developed and epitaxied by metal-organic chemical vapor deposition. We fabricated a UTC photodiode of 30 mu m in diameter. Theoretical simulation based on drift-diffusion model was used to analyze the space-charge-screening effect in UTC photodiode primarily in two aspects: the carrier concentrations and the space electric field. The simulation results were generally in agreement with the experimental data.

Space-charge-limited currents in GaN Schottky diodes

Unusual dark current voltage (I-V) characteristics were observed in GaN Schottky diodes. I-V characteristics of the GaN Schottky diodes were measured down to the magnitude of 10(-14) A. Although these Schottky diodes were clearly rectifying, their I-V characteristics were non-ideal which can be judged from the non-linearity in the semi-logarithmic plots. Careful analysis of the forward bias I-V characteristics on log-log scale indicates space-charge-limited current (SCLC) conduction dominates the current transport in these GaN Schottky diodes. The concentration of the deep trapping centers was estimated to be higher than 10(15) cm(-3). In the deep level transient spectra (DLTS) measurements for the GaN Schottky diodes, deep defect levels around 0.20 eV below the bottom of the conduction band were identified, which may act as the trapping centers. The concentration of the deep centers obtained from the DLTS data is about 5 x 10(15) cm(-3). SCLC measurements may be used to probe the properties of deep levels in wide bandgap GaN-AlGaN compound semiconductors, as is the case with insulators in the presence of trapping centers. (c) 2005 Elsevier Ltd. All rights reserved.

Determination of electron mobility in a blue-emitting alternating block copolymer by space-charge-limited current measurements

In this communication we analyse current versus voltage data obtained using one carrier injection at metal/polymer/metal structures, The used polymer is a soluble blue-emitting alternating block copolymer, Our experimental results demonstrate that the electron current is limited by a large amount of traps with exponential energy distribution in the copolymer. The electron ;mobility of 5.1 x 10(-10) cm(2)/V s is directly determined by space-charge-limited current measurements. The electron mobility is at least three orders of magnitude smaller than that for holes in the copolymer. (C) 1999 Elsevier Science Ltd. All rights reserved.

Self-consistent kinetic modeling of low-pressure inductively coupled radio-frequency discharges

An efficient method for solving the spatially inhomogeneous Boltzmann equation in a two-term approximation for low-pressure inductively coupled plasmas has been developed. The electron distribution function (EDF), a function of total electron energy and two spatial coordinates, is found self-consistently with the static space-charge potential which is computed from a 2D fluid model, and the rf electric field profile which is calculated from the Maxwell equations. The EDF and the spatial distributions of the electron density, potential, temperature, ionization rate, and the inductive electric field are calculated and discussed. (C) 1996 American Institute of Physics.

强外加电场与大调制度下光折变动力学光栅形成研究

强外加电场与大调制度在光折变效应的研究中已经得到了广泛应用。采用PDECOL算法, 严格求解光折变带输运方程, 得到外加电场时不同调制度下光折变晶体中随时间变化的空间电荷场、载流子浓度, 并讨论了外加电场对它们的影响。通过将物质方程与耦合波方程联立数值求解, 可得到光折变光栅形成过程中两波耦合增益系数以及光束条纹相位的变化。模拟结果表明, 在强外加电场作用下, 两束记录光之间的光强与相位耦合都得到了增强, 而原有的解析式忽视了强外加电场与大调制度对空间电荷场相位耦合的影响, 此时不再适用。同时发现折射率光

Primary and secondary threshold intensities of ultraviolet-laser-induced domain nucleation in nearly stoichiometric LiTaO3

The primary and secondary threshold intensities of ultraviolet-laser-induced preferential domain nucleation in nearly stoichiometric LiTaO3 is observed. The primary threshold is the minimum intensity to achieve the instantaneous preferential domain nucleation within the focus by the combined action of irradiation and electric fields. The secondary threshold is the minimum intensity to achieve the memory effect without any irradiation within the original focus. The space charge field created by the photoionization carriers is thought to be responsible for the instantaneous effect. The explanation based on the formation and transformation of extrinsic defect is presented for the memory effect. (c) 2008 American Institute of Physics.

Carrier transport assisted by dopants in doped poly(N-vinylcarbozole) light-emitting diodes

We have investigated the transient electroluminescence (EL) onset of the double-layer light-emitting devices made from poly(N-vinylcarbozole) (PVK) doped with 4-(dicyanomethylene)-2-t-butyl-6(1,1,7,7-tetramethyljulolidyl-9-enyl)-4H-pyran (DCJTB) and tris(8-hydroxy-quinoline) aluminium (Alq(3)). For the double-layered device in which PVK was doped with 0.1 wt% DCJTB, the EL onset of PVK lags that of DCJTB and Alq(3), while the EL onset of DCJTB and Alq(3) is simultaneous. However, the EL emission of the double-layered device of PVK/Alq(3) originates only from Alq(3). The results show that DCJTB dopants can not only help to tunnel electrons from Alq(3) zone to PVK but can also assist electrons transfer in PVK under high electric field by hopping between DCJTB molecules or from DCJTB to PVK sites at a low doping concentration of 0.1 wt%. When the DCJTB doping concentration is 4.0 wt%, the EL onset of Alq(3) lags that of DCJTB. The difference in the EL onsets of DCJTB, Alq(3) and PVK is attributed to the slow build-up of the internal space charge in the vicinity of the interface between PVK and Alq(3). The electron potential difference of the interface between Alq(3) and PVK doped by DCJTB can be adjusted by changing the DCJTB doping concentration in double-layer devices.

GIANT CAPACITANCE OSCILLATIONS RELATED TO THE QUANTUM CAPACITANCE IN GAAS ALAS SUPERLATTICES

We have observed periodic current and capacitance oscillations with increasing bias on doped GaAs/AlAs superlattices at a temperature of 77 K. The maximum of the observed capacitance is larger than usual geometric capacitances in superlattices, being comparable to the quantum capacitance of the two-dimensional (2D) electron system proposed by Luryi. A model based on well-to-well sequential resonant tunneling due to the movement of the boundary between the electric field domains in superlattice was proposed to explain the origin of the giant capacitance oscillations. It was demonstrated that the capacitance at the peaks of capacitance-voltage (C-V) characteristics reflects the quantum capacitance of the space-charge region at the boundary between the domains (a novel 2D electron system).

Interfacial behaviour of quantum well electrode/electrolyte: effect of redox species on EER spectra of a single quantum well GaAs vertical bar AlxGa1-xAs electrode

The EER spectra of a single quantum well GaAs\AlxGa1-xAs electrode were studied as a function of applied reverse bias in ferrocene, p-methyl nitrobenzene and hydroquinone+benzoquinone non-aqueous solutions. EER spectra were compared for different redox species and showed that a pronounced quantum-confined Stark effect and a Franz-Keldysh oscillation for a single quantum well electrode were obtained in the p-methyl-nitrobenzene- and hydroquinone+benzoquinone-containing solutions. A surface interaction of the single quantum well electrode with ferrocene led to fewer changes in the electric field of the space charge layer for reverse bias; this was suggested to explain the weak quantum-confined Stark effect and Franz-Keldysh oscillation effect observed for the single quantum well electrode in the ferrocene-containing solution. (C) 1997 Elsevier Science S.A.

Reflectance-difference spectroscopy study of the Fermi-level position of low-temperature-grown GaAs

The results of a reflectance-difference spectroscopy study of GaAs grown on (100) GaAs substrates by low-temperature molecular-beam epitaxy (LT-GaAs) are presented. In-plane optical anisotropy resonances which come from the linear electro-optic effect produced by the surface electric field are observed. The RDS line shape of the resonances clearly shows that the depletion region of LT-GaAs is indeed extremely narrow (much less than 200 Angstrom). The surface potential is obtained from the RDS resonance amplitude without the knowledge of space-charge density. The change of the surface potential with post-growth annealing temperatures reflects a complicated movement of the Fermi level in LT-GaAs. The Fermi level still moves for samples annealed at above 600 degrees C, instead of being pinned to the As precipitates. This behavior can be explained by the dynamic properties of defects in the annealing process.

Self-consistent calculation of electronic states in asymmetric double barrier structure

With contributions from both three-dimensional (3D) electrons in heavily doped contacts and 2D electrons in the accumulation layer, a self-consistent calculation based on effective mass theory is presented for studying the anomalous behaviour of the quasi-bound levels in the accumulation layer and that in the central well of an asymmetric double barrier structure (DBS). By choosing the thickness of the incident barrier properly, it is revealed that these two quasi-bound levels may merge into a unique bound level in the off-resonance regime which shows a very good 2D nature in contrast to the conventional picture for level crossing. An evident intrinsic I-V bistability is also shown. It is noticeable that the effect of charge build-up in the central well is so strong that the electric field in the incident barrier even decreases when the applied bias increases within the resonant region.

Study of buncher efficiency in axial injection system of SFC

In order to reduce the influence of the stray electric field of the buncher in the axial injection system of SFC and to improve the injection efficiency of SFC, the existing buncher electrode is investigated and a new electrode is designed. The influences of the electric field to the beams for the both cases are simulated. The simulation results show that the bunching efficiency is improved from 55% to 74% with the new electrode. At the same time, the influence of the space charge is computed and according to the results, the location of the buncher is readjusted too.

Performance improvement by charge trapping of doping fluorescent dyes in organic memory devices

We studied the memory effect in the devices consisting of dye-doped N, N'-di(naphthalene-1-yl)-N, N'-diphenyl-benzidine sandwiched between indium-tin oxide and Ag electrodes. It was found that the on/off current ratio was greatly improved by the doped fluorescent dyes compared with nondoping devices. A mechanism of charge trapping was demonstrated to explain the improvement of the memory effect. For the off state, the conduction process is dominated by the trapping current, which is a characteristic of the space-charge limited current, whereas the on state is dominated by the detrapping current, and interpreted by Poole-Frenkel emission.