Pt nanoparticles: Heat treatment-based preparation and Ru(bpy)(3)(2+)-mediated formation of aggregates that can form stable films on bare solid electrode surfaces for solid-state electrochemiluminescence detection

A simple thermal process for the preparation of small Pt nanoparticles is presented, carried out by heating a H-2-PtCl6/3- thiophenemalonic acid aqueous solution. The following treatment of such colloidal Pt solution with Ru( bpy)(3)(2+) causes the assembly of Pt nanoparticles into aggregates. Most importantly, directly placing such aggregates on bare solid electrode surfaces can produce very stable films exhibiting excellent electrochemiluminescence behaviors.

REDOX THERMODYNAMICS OF CYTOCHROME-C AT THE BARE GLASSY-CARBON ELECTRODE

Investigation of the redox thermodynamics of horse heart cytochrome c at bare glassy carbon electrodes has been performed using cyclic voltammetry with a nonisothermal electrochemical cell. The thermodynamic parameters of the electron-transfer reaction of cytochrome c have been estimated in different component buffer solutions. The change DELTAS(re)-degrees in reaction center entropy and the formal potential E-degrees' (at 25-degrees-C, vs. standard hydrogen electrode (SHE)) for cytochrome c are found to be -64.1 J K-1 mol-1 and 0.251 V in phosphate buffer, -64.8 J K-1 mol-1 and 0.257 V in Tris + HCl buffer, -65.6 J K-1 mol-1 and 0.261 V in Tris+CH3COOH buffer (pH 7.0, ionic strength 100 mM). The temperature dependence of the formal potential obtained in phosphate buffer with or without NaCl in the range 5-55-degrees-C shows biphase characteristics in an alkaline solution with an intersection point at ca. 44-degrees-C or 42-degrees-C, which should be due to a structural change in the protein moiety of cytochrome c. However, in acidic and neutral solutions only a monotonic relationship between E-degrees' and temperature is observed. The effect of the buffer component on E-degrees' for cytochrome c is also discussed.

A coupling model for terrestrial processes in arid areas and its application

In this paper, the importance of investigation on terrestrical processes in arid areas for mankind's living environment protection and local economy development as well as its present state of the art are elucidated. A coupling model, which evaluates heat, mass, momentum and radiative fluxes in the SPAC system, is developed for simulating microclimate over plant and bare soil. Especially, it is focussed on the details of turbulence transfer. For illustration, numerical simulation of the water-heat exchange processes at Shapotou Observatory, GAS, Ninxia Province are conducted, and the computational results show that the laws of land-surface processes are rather typical in the arid areas.

Adsorption of human serum albumin onto gold: a combined electrochemical and ellipsometric study

Human serum albumin adsorption onto gold surfaces was investigated by electrochemical and ellipsometric methods. Albumin adsorption onto gold was confirmed by the change of the open circuit potential of gold and by the ellipsometric parameter variation during albumin immobilization. In both experiments the parameters reached stable values within 10-15 min. The albumin adsorption layer thickness measured with the ellipsometer was about 1.5 nm. The adsorption of albumin Under applied potential was also investigated and it was found that both positive and negative applied potential promote albumin adsorption. Changes in the optical parameters of bare gold and albumin adsorbed onto gold surface under applied potential were investigated with in Situ ellipsometry. The similarity and reversibility of the optical changes showed that adsorbed albumin was stable on the gold surface Under the applied potential range (-200-600 mV). The cyclic voltammograms of K3Fe(CN)(6) on the modified gold surface showed that albumin Could partly block the oxidation and reduction reaction. (C) 2004 Elsevier Inc. All rights reserved.

土壤内水分流动、温度分布及其表面蒸发效应的研究——土壤表面蒸发阻抗的探讨

本文旨在给出计算土壤水分、温度变化的物理模型及计算方法,并寻求表面蒸发阻抗的经验公式。土壤水分流动及含量变化由一维等温模型(Isothermal Model)来描述,土壤内热流及其温度变化是通过强迫-恢复法(Force-Restore Method)来描述。问题最终归结为求解一个非线性抛物线型方程及二个一阶非线性联立常微分方程,采用预测-校正法在IBM-370机上进行对亚利桑那(Arizona)无植被土壤(Bare Soil)七天的实测数据进行模拟,最后给出计算结果及实测数据的完整比较。

Trapping of neutral atoms with a radio-frequency field

Based on the dressed-atom approach, we discuss a two-dimensional (2D) radio-frequency trap for neutral atoms, in which the trap potential derives from the magnetic-dipole transition among the hyperfine Zeeman sublevels. By adjusting the detuning of the radiation from resonance, the trapping states will be changed predominantly from the bare states Of m(FgF) > 0 to other states of m(FgF) < 0, where m(F) and g(F) are the quantum numbers of Zeeman sublevels and the Lande factor, respectively. This character contrasts finely with that, of a static magnetic, trap that can only trap or guide the states of m(FgF) > 0. In comparison to the optical field, the radio-frequency trap eliminates the spontaneous emission heating of the atoms. Unlike other oscillating traps reported in the e literature, the configuration of the radio-frequency trap is suitable for realization of a miniature magnetic guide.

高分辨率光纤光栅温度传感器的研究

报道了一种具有高分辨率和高效且价廉的解调系统的光纤布拉格光栅(FBG)温度传感器。提出了光纤光栅的金属槽封装技术，以提高传感光栅的温度灵敏性。研究了金属槽封装光栅的温度灵敏性，理论分析和实验结果表明，封装光栅的温度灵敏系数比普通裸光栅提高了3．6倍。系统利用一长周期光栅(LPG)作为线性滤波器，宽带光源经此长周期光栅调制后入射到传感光栅，可解调布拉格传感光栅的波长位移。理论分析与实验结果一致，系统可达到的温度分辨率为0．02℃。

Enhancement of near-band edge photoluminescence of ZnO thin films by employing MgF2 buffer layer

ZnO/MgF2/ZnO sandwich structure films were fabricated. The effects of a buffer layer on structure and optical properties of ZnO films were investigated by X-ray diffraction, photoluminescence, optical transmittance and absorption measurements. Measurement results showed that the buffer layer had the effects of improving the quality of ZnO films and releasing the residual stresses in the films. The near-band edge emissions of ZnO films deposited on the MgF2 buffer layer were significantly enhanced compared with those deposited on bare substrate due to the smaller lattice mismatch between MgF2 and ZnO than that between fused silica and ZnO. (c) 2006 Elsevier B.V. All rights reserved.

Enhancement of near-band-edge photoluminescence of ZnO thin films in sandwich configuration at room temperature

ZnO/ITO/ZnO sandwich structure films were fabricated. The effects of buffer layer on the structure and optical properties of ZnO films were investigated by x-ray diffraction (XRD), photoluminescence, optical transmittance, and absorption measurements. XRD spectra indicate that a buffer layer has the effects of lowering the grain orientation of ZnO films and increasing the residual stresses in the films. The near-band-edge emissions of ZnO films deposited on both single indium tin oxide (ITO) buffer and ITO/ZnO double buffers are significantly enhanced compared with that deposited on a bare substrate due to the quantum confinement effect. (C) 2006 American Institute of Physics.

水稻分蘖逆制的可塑性生长发育试验和模型辅助分析: 应用植物生长模型缩减基因型与表现型的间隙

表现型是基因型和环境相互作用的结果，不同环境条件下给定基因型能表达为不同的表型，这是我们所熟知的植物表型可塑性。可塑性一方面帮助植物更好地适应不利环境，但我们也不得不承认可塑性，使得人们难以从表型直接理解基因功能。如今，基因组学快速发展允许解密基因更迅速便捷，甚至发现大量基因。因此，进一步理解可塑性过程的基因背景、理解基因和环境对表型的作用非常必要。由于从基因到表型非线性过程，从而引起基因型和表型差异，期望有效方法或工具能跨越这个横沟。植物生长模型已被开发用来模拟植物响应环境动态关系，并且将参数和环境整合到模型方法中。因此，普遍认为植物生长模型将在探讨复杂可塑性基因功能扮演重要作用。水稻是普遍应用在基因组学和功能基因组学典型的模式植物。水稻分蘖是重要的基因依赖环境敏感的过程，这是农学上非常关注的现象。本文将应用模型方法理解水稻分蘖逆制的可塑性。本研究设计了一个相对优化环境条件下，野生型水稻分蘖逆制试验，该试验有两个处理（1）手工剪切分蘖;（2）一个TDNA突变体，并分别设置对照。本试验在法国国际农业研究发展中心（CIRAD）温室开展，每个试验利用水培方法，培育植株50天左右（营养生长阶段）。在营养生长阶段，定期破坏性测量单个器官的鲜重、干重和单个器官的大小。本文尝试应用两个植物生长模型模拟和解释水稻响应分蘖逆制表型发育。GreenLab是一个植物结构数学模型，已被开发用来模拟植物结构动态和结构功能反馈。植物3D结构决定光捕获和生物产量，然后，生物量分配到新的器官，因此，器官形态结构将发生变化，新阶段的生物量生产将会更新。通过基于最小二乘法的CornerFit软件实现了模型参数优化。另一个模型EcoMeristem，基于作物模型和形态发生概念，用来模拟水稻分生组织活动、器官发生和形态过程等可塑性过程，内部竞争指数Ic主要与环境相关，参数主要描述基因功能。通过植物生长过程模拟与测量的优化，手工提取了模型参数。这两个植物生长模型演示了缩减基因型与表型之间的差距，并实现了水稻响应分蘖完全逆制的可塑性过程。GreenLab模型有一个极好的器官发生基础，但本研究限于单茎拓扑结构。另外，该模型有更长的时间步长，这对描述植物可塑性没有提供足够的分辨能力，这在EcoMeristem模型中得到了解决。很明显，EcoMeristem模型有更弱的结构基础，这可能蕴含了一些可塑性信息的缺失。总体而言，EcoMeristem模型有更专业的可塑性过程、基因环境理解和表达能力。

Bulge testing and fracture properties of plasma-enhanced chemical vapor deposited silicon nitride thin films

The mechanical properties and fracture behavior of silicon nitride (SiNx) thin film fabricated by plasma-enhanced chemical vapor deposition is reported. Plane-strain moduli, prestresses, and fracture strengths of silicon nitride thin film; deposited both oil a bare Si substrate and oil a thermally oxidized Si substrate were extracted using bulge testing combined with a refined load-deflection model of long rectangular membranes. The plane-strain modu i and prestresses of SiNx thin films have little dependence on the substrates, that is, for the bare Si substrate, they are 133 +/- 19 GPa and 178 +/- 22 MPa, respectively, while for the thermally oxidized substrate, they are 140 +/- 26 Gila and 194 +/- 34 MPa, respectively. However, the fracture strength values of SiNx films grown on the two substrates are quite different, i.e., 1.53 +/- 0.33 Gila and 3.08 +/- 0.79 GPa for the bare Si substrate a A the oxidized Si substrate, respectively. The reference stresses were computed by integrating the local stress of the membrane at the fracture over the edge, Surface, and volume of the specimens and fitted with the Weibull distribution function. For SiNx thin film produced oil the bare Si Substrate, the Volume integration gave a significantly better agreement between data and model, implying that the volume flaws re the dominant fracture origin. For SiNx thin film grown on the oxidized Si substrate, the fit quality of surface and edge integration was significantly better than the Volume integration, and the dominant surface and edge flaws could be caused by buffered HF attacking the SiNx layer during SiO2 removal. Crown Copyright (C) 2008 Published by Elsevier B.V. All rights reserved.

Effect of SiO2 encapsulation on the nitrogen reorganization in a GaNAs/GaAs single quantum well

Effects of SiO2 encapsulation and rapid thermal annealing on the optical properties of a GaNAs/GaAs single quantum well (SQW) are studied by low-temperature photoluminescence (LTPL). After annealing at 800degreesC for 30s, a blueshift of the LTPL peak energy for the SiO2-capped region is 25meV and that for the bare region is 0.8meV. The results can attribute to the nitrogen reorganization in the GaNAs/GaAs SQW. It is also shown that the nitrogen reorganization can be obviously enhanced by SiO2 cap-layer. A simple model is used to describe the SiO2-enhanced blueshift of the LTPL peak energy. The estimated activation energy of the N atomic reorganization for the samples annealing with and without SiO2 cap-layer are 2.9eV and 3.1eV, respectively.