A novel epitaxy of isotactic polypropylene (alpha phase) on PTFE and organic substrates

Isotactic polypropylene in its a modification (alpha iPP) crystallises epitaxially on polytetrafluoroethylene (PTFE) and several hemiacids or salts of substituted benzoic acids via a novel contact plane, namely (110): so far, the only known contact plane involved in alpha iPP homo- and hetero-epitaxies was (010). In spite of its complicated architecture (alternation of antichiral helices with different azimuthal settings), the (110)(alpha iPP) contact plane displays well defined, if not prominent, rows of methyl side chains parallel to the crystallographic (112) direction (at 57 degrees to the c-axis) and approximate to 5.5 Angstrom apart. The matching contact planes of the substrates display linear gratings made of rows of e.g. chlorine atoms or PTFE chains with similar approximate to 5.5 Angstrom inter-row or interchain distances. Various morphologies are observed in iPP thin films crystallised at different cooling rates in the presence of PTFE; they can be analysed in terms of a succession and interplay of successive epitaxies: initial alpha iPP/PTFE heteroepitaxy, followed by alpha iPP/alpha iPP and gamma iPP/alpha iPP homoepitaxies. (C) 1999 Published by Elsevier Science Ltd. All rights reserved.

Study of FT-Raman Spectroscopy on the Effects of Lanthanide Ions and Their Complexes on the Fluidity of Dipalmitoylphosphatidylethanolamine Bilayer

The effects of lanthanide ions and their complexes of citrate and DTPA ligands on the fluidity of dipalmitoylphosphatidylethanolamine (DPPE) bilayers have been studied by FT-Raman spectroscopy. the results show that lanthanide ions of lower concentrationn decrease the fluidity of acyl chains of DPPE bilayers and change the conformation of C C-C backbone from gauche to the trans lanthanide ions of higher concentration, however, increase the fluidity of acyl chains and increase the gauche population of C-C-C backbone. Lanthanide complex of citrate have no effect on the fluidity of acyl chains of DPPE bilayers in the region of experimental concentration, but La-DTPA complex increase slightly the fluidity of acyl chains. the results also indicated that lanthanide ion of lower concentration changed the lattice packing of hydrocarbon chains from hexagonal form to orthorhombic form, but it is still in hexagonal or distorted hexagonal lattice cell in the gel state in the presence of metal ions and lanthanide complexes of higher concentration

Sensitivity map of laser tweezers Raman spectroscopy for single-cell analysis of colorectal cancer

Raman spectroscopy on single, living epithelial cells captured in a laser trap is shown to have diagnostic power over colorectal cancer. This new single-cell technology comprises three major components: primary culture processing of human tissue samples to produce single-cell suspensions, Raman detection on singly trapped cells, and diagnoses of the cells by artificial neural network classifications. it is compared with DNA flow cytometry for similarities and differences. Its advantages over tissue Raman spectroscopy are also discussed. In the actual construction of a diagnostic model for colorectal cancer, real patient data were taken to generate a training set of 320 Raman spectra and, a test set of 80. By incorporating outlier corrections to a conventional binary neural classifier, our network accomplished significantly better predictions than logistic regressions, with sensitivity improved from 77.5% to 86.3% and specificity improved from 81.3% to 86.3% for the training set and moderate improvements for the test set. Most important, the network approach enables a sensitivity map analysis to quantitate the relevance of each Raman band to the normal-to-cancer transform at the cell level. Our technique has direct clinic applications for diagnosing cancers and basic science potential in the study of cell dynamics of carcinogenesis. (C) 2007 Society of Photo-Optical Instrumentation Engineers.

Sensitivity map of laser tweezers Raman spectroscopy for single-cell analysis of colorectal cancer

Raman spectroscopy on single, living epithelial cells captured in a laser trap is shown to have diagnostic power over colorectal cancer. This new single-cell technology comprises three major components: primary culture processing of human tissue samples to produce single-cell suspensions, Raman detection on singly trapped cells, and diagnoses of the cells by artificial neural network classifications. it is compared with DNA flow cytometry for similarities and differences. Its advantages over tissue Raman spectroscopy are also discussed. In the actual construction of a diagnostic model for colorectal cancer, real patient data were taken to generate a training set of 320 Raman spectra and, a test set of 80. By incorporating outlier corrections to a conventional binary neural classifier, our network accomplished significantly better predictions than logistic regressions, with sensitivity improved from 77.5% to 86.3% and specificity improved from 81.3% to 86.3% for the training set and moderate improvements for the test set. Most important, the network approach enables a sensitivity map analysis to quantitate the relevance of each Raman band to the normal-to-cancer transform at the cell level. Our technique has direct clinic applications for diagnosing cancers and basic science potential in the study of cell dynamics of carcinogenesis. (C) 2007 Society of Photo-Optical Instrumentation Engineers.

Stability investigation of cubic GaN films grown by metalorganic chemical vapor deposition on GaAs (001)

The thermal stability of cubic-phase GaN (c-GaN) films are investigated by photoluminescence (PL) and Raman scattering spectroscopy. C-GaN films are grown on GaAs (001) substrates by metalorganic chemical vapor deposition. PL measurements show that the near-band-edge emissions in the as-grown GaN layers and thermally treated samples are mainly from c-GaN. No degradation of the optical qualities is observed after thermal annealing. Raman scattering spectroscopy shows that the intensity of the E-2 peak from hexagonal GaN grains increases with annealing temperature for the samples with poor crystal quality, while thermal annealing up to 1000 degrees C has no obvious effect on the samples with high crystal quality. (C) 1999 American Institute of Physics. [S0003-6951(99)04719-1].

Kinetics of dissociative water adsorption on stepped Si(001), on Si(115), Si(113), Si(5,5,12) and Si(112)

We present photoelectron spectroscopic and low energy electron diffraction measurements of water adsorption on flat Si samples of the orientations (001), (115), (113), (5,5,12) and (112) as well as on curved samples covering continuously the ranges (001)-(117) and (113)-(5,5,12)-(112). On all orientations, water adsorption is dissociative (OH and H) and non-destructive. On Si(001) the sticking coefficient S and the saturation coverage Theta(sat) are largest. On Si(001) and for small miscuts in the [110]-azimuth, S is constant nearly up to saturation which proves that the kinetics involves a weakly bound mobile precursor state. For (001)-vicinals with high miscut angles (9-13 degrees), the step structure breaks down, the precursor mobility is affected and the adsorption kinetics changed. On (115), (113), (5,5,12) and (112), the values of S and Theta(sat) are smaller which indicates that not all sites are able to dissociate and bind water. For (113) the shape of the adsorption curves Theta versus exposure shows the existence of two adsorption processes, one with mobile precursor kinetics and one with Langmuir-like kinetics. On (5,5,12), two processes with mobile precursor kinetics are observed which are ascribed to adsorption on different surface regions within the large surface unit cell. From the corresponding values of S and Theta(sat), data for structure models are deduced. (C) 1997 Elsevier Science B.V.

Branching Ratios of alpha Decay for Nuclei near Deformed Shell Closures

The generalized liquid drop model (GLDM) is extended to the region around deformed shell closure (270)Hs by taking into account the excitation energy EI+ of the residual daughter nucleus and the centrifugal potential energy V-cen(r). The branching ratios of alpha decays from the ground state of a parent nucleus to the ground state 0(+) of its deformed daughter nucleus and to the first excited state 2(+) are calculated in the framework of the GLDM. The results support the proposal that a measurement of alpha spectroscopy is a feasible method to extract information on nuclear deformation of superheavy nuclei around the deformed nucleus (270)Hs.

Medium effect of nucleon-nucleon cross section on the isoscaling parameter alpha

The medium effect of in-medium nucleon-nucleon cross section sigma(med)(NN) (alpha(m)) on the isoscaling parameter a is investigated for two couples of central nuclear reactions Ca-40 + Ca-48 and Ca-60 + Ca-48; Sn-112 + Sn-112 and Sn-124 + Sn-124 at beam energy region from 40 to 60 MeV/nucleon with isospin dependent quantum molecular dynamics. It is found that there is the obvious medium effect of sigma(med)(NN) (alpha(m)) on the isoscaling parameters alpha. The mechanism for the medium effect of sigma(med)(NN) (alpha(m)) on a is investigated.

Magnetic Properties of Mn-Implanted n-Type Ge

Mn+ ions were implanted into n-type Ge(111) single crystal at room temperature at an energy of 100 keV with a dose of 3 x 1016 cm-2. Subsequent annealing was performed on the samples at 400 °C and 600 °C in a flowing nitrogen atmosphere. The magnetic properties of the samples have been investigated by alternating gradient magnetometer at room temperature. The compositional properties of the annealed samples were studied by Auger electron spectroscopy and the structural properties were analyzed by X-ray diffraction measurements. Magnetization measurements reveal room-temperature ferromagnetism for the annealed samples. The magnetic analysis supported by compositional and structural properties indicates that forming the diluted magnetic semiconductor (DMS) MnxGe1-x after annealing may account for the ferromagnetic behavior in the annealed samples.

Effect of annealing on photoluminescence properties of neon implanted GaN

The effect of thermal annealing on the luminescence properties of neon implanted GaN thin films was studied. Low temperature photoluminescence (PL) measurements were carried out on the samples implanted with different doses ranging from 10(14) to 9 x 10(15) cm(-2) and annealed isochronally at 800 and 900 degrees C. We observed a new peak appearing at 3.44 eV in the low temperative PL spectra of all the implanted samples after annealing at 900 degrees C. This peak has not been observed in the PL spectra of implanted samples annealed at 800 degrees C except for the samples implanted with the highest dose. The intensity of the yellow luminescence (YL) band noticed in the PL spectra measured after annealing was observed to decrease with the increase in dose until it was completely suppressed at a dose of 5 x 10(15) cm(-2). The appearance of a new peak at 3.44 eV and dose dependent suppression of the YL band are attributed to the dissociation of VGaON complexes caused by high energy ion implantation.

Photoluminescence study of AlGaInP/GaInP quantum well intermixing induced by zinc impurity diffusion

AlGaInP/GaInP quantum well intermixing phenomena induced by Zn impurity diffusion at 540 degrees C were studied using room-temperature photo luminescence (PL) spectroscopy. As the diffusion time increased from 40 to 120 min, PL blue shift taken on the AlGaInP/GaInP quantum well regions increased from 36.3 to 171.6 meV. Moreover, when the diffusion time was equal to or above 60 min, it was observed firstly that a PL red shift occurred with a PL blue shift on the samples. After detailed analysis, it was found that the red-shift PL spectra were measured on the Ga0.51In0.49P buffer layer of the samples, and the mechanism of the PL red shift and the PL blue shift were studied qualitatively. (C) 2007 Elsevier B.V. All rights reserved.

Optical properties of GaN grown on Si(111) substrates by MOCVD

GaN epilayers were grown on Si (111) substrates by MOCVD. The optical properties of the samples under different growth conditions were characterized The abnormal peaks of excitonic emissions related to cubic-GaN were observed on the samples under improper growth conditions based on the LT PL measurements. Also the peak intensity is much higher than that of hexagonal-GaN. The higher intensity of exciton peaks is attributed to the local quantum well formed between the hexagonal- and cubic-GaN. No exciton peaks of cubic-GaN were found on the sample using the optimal growth conditions.

Magnetic properties of Mn-implanted n-type Ge

Mn+ ions were implanted into n-type Ge(1 1 1) single crystal at room temperature at an energy of 100 keV with a dose of 3 x 10(16) cm(-2). Subsequent annealing was performed on the samples at 400 degreesC and 600 degreesC in a flowing nitrogen atmosphere. The magnetic properties of the samples have been investigated by alternating gradient magnetometer at room temperature. The compositional properties of the annealed samples were studied by Auger electron spectroscopy and the structural properties were analyzed by X-ray diffraction measurements. Magnetization measurements reveal room-temperature ferromagnetism for the annealed samples. The magnetic analysis supported by compositional and structural properties indicates that forming the diluted magnetic semiconductor (DMS) MnxGe1-x after annealing may account for the ferromagnetic behavior in the annealed samples. (C) 2004 Elsevier B.V. All rights reserved.

Design, simulation and testing of large area silicon drift detectors and detector array for X-ray spectroscopy

Large area (25 mm(2)) silicon drift detectors and detector arrays (5x5) have been designed, simulated, and fabricated for X-ray spectroscopy. On the anode side, the hexagonal drift detector was designed with self-biasing spiral cathode rings (p(+)) of fixed resistance between rings and with a grounded guard anode to separate surface current from the anode current. Two designs have been used for the P-side: symmetric self-biasing spiral cathode rings (p(+)) and a uniform backside p(+) implant. Only 3 to 5 electrodes are needed to bias the detector plus an anode for signal collection. With graded electrical potential, a sub-nanoamper anode current, and a very small anode capacitance, an initial FWHM of 1.3 keV, without optimization of all parameters, has been obtained for 5.9 keV Fe-55 X-ray at RT using a uniform backside detector.